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SIMULATION PROBLEMS
D7.72
D8.49
D10.87
20 October 2010
Figure 3.1 –Basic Common-Emitter Design Layout..........................................................................2
Figure 3.2 –Basic Class-AB Output stage Design Layout..................................................................3
Figure 3.3 –Modified Widlar Current Source Design Layout...........................................................4
Figure 4.1 –Basic Common-Emitter Design Layout..........................................................................5
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1. INTRODUCTION...........................................................................................................................1
2. PURPOSE........................................................................................................................................1
3. LITERATURE.................................................................................................................................2
3.1 Design Problem D7.72.....................................................................................................................2
3.2 Design Problem D8.49.....................................................................................................................3
3.3 Design Problem D10.87...................................................................................................................4
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1. INTRODUCTION
As referred to the section 2, three simulations have been conducted, in order to investigate the design
procedures and functioning of various electronic circuit types. Section 3 contains basic information on
the circuit type, with applicable design equations. Sections 4, 5 and 6 each describes the simulation and
design process of each respective problem.
2. PURPOSE
1.1
The aim of the simulation problems give students the opportunity to improve on their simulation skills
and to build confidence in designing and verifying circuit designs. Three problems must be completed
in order to facilitate a successful outcome. This encompasses the performing of hand calculations and
design of a preliminary circuit. Hereafter the design must be simulated in PSPICE and improved further
to ensure a well-functioning circuit and minimizing fiddling time.
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3. LITERATURE
3.1 Design Problem D7.72
The single stage common emitter amplifier circuit shown in figure 3.1 uses what is called Voltage Divider
Biasing. This type of biasing arrangement uses two resistors as a voltage divider network and is commonly
used in the design of BJT amplifier circuits.
Before attempting to design a transistor amplifier circuit, we look at some very important design equations.
The most commonly used equations are listed below, to aid in the design effort. The first few equations are
derived from Ohm's Law, whilst the last few equations deal with transistor gain.
V
I=
R
Ic
h fe=
Ib
P=VI
10
C1≥
2 π f min R b
10
C2≥
2 π f min R 21
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Before attempting to design a transistor amplifier circuit, we look at some very important design equations.
The most commonly used equations are listed below, to aid in the design effort.
V 2p
Ṕ L= I ≅ I =I
2 × R L E 9 ref L
R1
V BB =V BE 12 [1+ ]
R2
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Before attempting to design a transistor amplifier circuit, we look at some very important design equations.
The most commonly used equations are listed below, to aid in the design effort.
−¿
V
+¿−V BE 1− I ≅I ¿
R1+ R E1 O ref
I ref =V ¿
RO =r 02 ¿
IO βVT
gm 2 = r π 2=
VA IO
V BE1
I
IO ( )
I O R E 2−I ref RE 1=V T ln ref I O =I S e VT
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4.1 Common-Emitter
The single stage common emitter amplifier circuit shown in figure 4.1 is the physical model that is to be
designed and implemented. The various design components have been encircled, and are described in the
proceeding section.
- Entity 1
With entity 2 basically functioning as a Thevenin equivalent circuit, we need to separate the two
"sources" i.e. the signal source and the Thevenin Source, by introducing a blocking or coupling
capacitor, which acts as an open circuit to DC input. One must also remember thus, that R S does
not affect the bias of the transistor. The capacitor charges to the DC bias source, V B, to satisfy
Kirchhoff's voltage law and the DC bias is in series with the signal source.
DESIGN GOAL: for f ≥ flow = 10Hz, set the value of C1 so that its voltage drop V C1 is negligible at the
lowest operating frequency flow.
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- Entity 2
This type of biasing arrangement uses two resistors as a potential divider network. This method of
biasing the transistor greatly reduces the effects of varying Beta by holding the base bias at a
constant steady voltage level allowing for best stability. The quiescent Base voltage is determined
by the potential divider network formed by the two resistors.
- Entities 3 & 4
The capacitor across the emitter resistance R2_2 increases the current gain to the beta of the
particular transistor used. This value is determined using the resistor R 2_1 as reference. We
implement this entity when maximum gain is desired.
Using the formula for DC gain, we can calculate the base current as:
I c 500 uA
I b= = =6.66uA
hfe 75
To calculate the collector resistance, we use the first equation given in section 3, and we assume
that half of the supply voltage is dropped over R1. This ensures that the amplifier remains in the
linear operating range of the transistor:
R 1= ( 12 ) ¿
We need to determine how much voltage is to appear across the emitter resistor, R 2, before we
calculate its actual value. A good value is between 5 and 10 percent of V cc. We choose 7.5%, which
is about 1.5V. This voltage represents VR2 = 1.5V. Therefore:
1.5V 1.5 V
R 2= ( ) =
I b + I c 506.66 uA
≈ 2960 Ω
Because the voltage drop across the base to emitter of a silicon transistor is always 0.7V, the
voltage from the base to V- is 1.5V + 0.7V = 2.2V. This is the voltage drop across resistor R 4. In
order to provide a stable base voltage, resistor R4 should have a current of about 5 to 10 times the
base current. We assume 9 times the base current for a total of 59.99uA. The value of R 4 is thus:
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2.2V
R4 = ≈ 36.67 k Ω
59.999uA
If the voltage drop across R4 is 2.2V, the voltage drop across R3 must be the remainder, or 20V -
2.2V = 17.8V. The current through R3 is the sum of the current through R4 and the base, thus
6.66uA + 59.99uA = 66.66uA. We calculate the value for R3 as follows:
17.8 V
R 3= ≈ 267 k Ω
66.66 uA
In order to choose a value for the bypass capacitor C 1, we assume that the voltage drop across the
v sig
capacitor is in the order of . Using equation 3, we calculate the bypass capacitor C 1, with
10
1 1 1
= + => Rb = 32.24kΩ:
R b R 3 R4
10 10
C1≥ = =49.3 uF
2 π f min R b 2 π × 10 Hz × 32.24 kΩ
In order to achieve reasonable gain with this circuit, we split R 2 into R2_1 and R2_2, make R2_1 = 30Ω <<
R2_2 = 2930Ω and use capacitor bypassing. By assuming that V Z2_2 << VR2_1, we use equation 4 to
calculate the capacitor C2:
1 1
C 2= = ≈ 220 uF
2 π f min R 2
1
2 π ×10 Hz ×30
Finally, we must calculate the power dissipation of each resistor. This is done using the equation
for power:
P R 1=10 V × 500uA=5 mW
P R 21=0.4 V ×506.66 uA=0.2 mW
P R 22=0.9 V × 506.66uA=0.46 mW
P R 3=17.8 V × 66.66 uA=1.19 mW
P R 4=2.2V ×59.99 uA=0.13 mW
The circuit, using the determined values has been simulated, and the results are included in section
5. In order to do a physical implementation of this circuit, we require standard resistor and
capacitor values. The modified values for the parameters are thus:
R1=20 kΩ
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R21=32 Ω
R22=2.94 kΩ
R3=267 kΩ
R4 =35.7 kΩ
R L=4.7 kΩ
C 1=47 uF
C 2=220 uF
C 3=220 uF
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DESIGN GOAL: for f ≥ flow = 10Hz, set the value of C1 so that its voltage drop V C1 is negligible at the
lowest operating frequency flow.
- Entity 2
This type of biasing arrangement uses two resistors as a potential divider network, for each
transistor. This method of biasing the transistor greatly reduces the effects of varying Beta by
holding the base bias at a constant steady voltage level allowing for best stability. The quiescent
Base voltage is determined by the potential divider network formed by the two resistors, relative to
each transistor.
- Entity 3
The capacitor across the emitter resistance R 7 increases the current gain to the beta of the
particular transistor used. This value is determined using the resistor R 4 as reference. We
implement this entity when maximum gain is desired.
Using the formula for DC gain, we can calculate the base current of transistor Q1 as:
I c 500 uA
I b 1= = =6.66 uA
hfe 75
I c + I b 1 500 uA+6.66 uA
I b 2= = =6.76 uA
hfe 75
To calculate the collector resistance, we use the first equation given in section 3.2, and we assume
that a quarter of the supply voltage is dropped over R 1. This ensures that the amplifier remains in
the linear operating range of the transistor:
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R 1= ( 14 ) ¿
We need to determine how much voltage is to appear across Q2's emitter resistor, R E, before we
calculate its actual value. A good value is between 5 and 10 percent of V cc. We choose 7.5%, which
is about 1.5V. This voltage represents VR2 = 1.5V. Therefore:
1.5 V 1.5 V
R E= (I )
b 1 + I b 2+ I c
=
513.43 uA
≈ 2921Ω
Because the voltage drop across the base to emitter of a silicon transistor is always 0.7V, the
voltage from the base to V- is 1.5V + 0.7V = 2.2V. This is the voltage drop across resistor R 5. In
order to provide a stable base voltage, resistor R 5 should have a current of about 5 to 10 times the
base current. We assume 9 times the base current for a total of 60.84uA. The value of R 5 is thus:
2.2V
R 5= ≈ 36.16 k Ω
60.84 uA
The voltage drop across R3 is equivalent to the voltage drop across the transistor Q1, thus:
0.7 V
R 3= ≈10.36 k Ω
60.84 uA +6.76 uA
If the voltage drop across R 5 is 2.2V and R3 is 0.7V, the voltage drop across R 2 must be the
remainder, or 20V - 2.2V - 0.7V = 17.1V. The current through R 2 is the sum of the current through
R3 and the base of Q1, thus 6.66uA + 67.6uA = 74.26uA. We calculate the value for R 2 as follows:
17.1 V
R 2= ≈ 230.27 k Ω
74.26 uA
In order to choose a value for the bypass capacitor C 1, we assume that the voltage drop across the
v sig
capacitor is in the order of . Using equation 3, we calculate the bypass capacitor C 1, with
10
1 1 1
= + => Rb = 8.05kΩ:
R b R 3 R5
10 10
C1≥ = =197.6 uF
2 π f min R b 2 π × 10 Hz × 32.24 kΩ
In order to achieve reasonable gain with this circuit, we split R E into R4 and R7, make R4 = 20Ω << R7 =
2900Ω and use capacitor bypassing. By assuming that V Z2_2 << VR2_1, we use equation 4 to calculate
the capacitor C2:
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1 1
C 2= = ≈ 220 uF
2 π f min R 2
1
2 π ×10 Hz ×20
Finally, we must calculate the power dissipation of each resistor. This is done using the equation
for power:
P R 1=5 V × 500uA=2.5 mW
P R 2=17.1V ×74.26 uA=6.3 mW
P R 3=0.7 V ×67.6 uA=0.061 mW
P R 4=0.25V ×513.43 uA=0.13 mW
P R 5=2.2 V × 60.84 uA=0.13 mW
P R 7=0.95 V ×513.43 uA=0.49 mW
The circuit, using the determined values has been simulated, and the results are included in section
5. In order to do a physical implementation of this circuit, we require standard resistor and
capacitor values. The modified values for the parameters are thus:
R1=10 kΩ
R2=230 kΩ
R3=10.33 kΩ
R4 =20 Ω
R5=34.4 kΩ
R L=4.7 kΩ
R7 =3 kΩ
C 1=220 uF
C 2=220 uF
C 3=220 uF
In this section, the circuits that were designed in section 4 are simulated, with resulting gain graphs
illustrated, proving that the designs are within specification.
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In the above graph, the green line represents the voltage across the load; the purple line represents the
voltage gain in dB; and red represents the input signal voltage. The gain provided is +34dB, with a lower
cut-off frequency of + 10Hz.
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In the above graph, the red line represents the voltage across the load; the green line represents the
voltage gain in dB; and purple represents the input signal voltage. The gain provided is +34.1dB, with a
lower cut-off frequency of + 12Hz.
2
1
- Entity 1
Entity one represents the VBE multiplier, which provides entity 2 with a voltage bias of 3.2V.
From the specification, we can determine the peak output voltage using the equation for average
power:
Since the peak output voltage must be no more that 80% of V+, it follows that:
V P 8.94V
−¿= = ≅11.2 V ¿
0.8 0.8
V +¿=−V ¿
At this peak output voltage, the emitter current of Q9 is approximately equal to the load current
and therefore:
I b 9= ( 79050mA )=≈ 16 mA
We want the VBE multiplier to bias the circuit such that V BB is equal to 2×VBEQx = 3.2V
Therefore the resistance pair, R1 and R2 must be chosen such that a voltage drop of 3.2 occurs:
R1
V BB =V BE 12 1+ ( ) R2
¿> R 1 ≈ 100 Ω∧R2 ≈ 250 Ω
In this section, the circuits that were designed in section 5.1 are simulated, with resulting voltage and
power graphs illustrated, proving that the designs are within specification.
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IO
IREF RO
VC2
1
- Entity 1
Entity 1 represents a two-transistor current source, also called a current mirror, as described in section 3.
The output impedance, RO, has a magnitude of 5.0MΩ.
DESIGN GOAL: we need to determine the values for the resistors which will guarantee an output current,
IO, of 200µA.
Using the formula for the output current, we can calculate the base-emitter voltage as:
IO 200× 10−6
V BE 1 =V T ln ( )
IS
=0.026 ln ( 10−14 )
≅ 0.6V
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The calculation of parameters rπ2, gm2 and rO2 follows from the equations:
VA 120 V
r 02= = =600 kΩ
I O 200 ×10−6 A
β V T 150 × 0.026V
r π 2= = =19.5 kΩ
IO 200 ×10−6 A
I O 200 ×10−6 A mA
gm 2 = = =7.69
VA 120 V V
To calculate the emitter resistance of transistor Q2, it follows from the equations that:
r 02
−1
R0
R E∨¿ r π 2= =953.6 Ω
gm 2
1 1 1
+ =
R E 19.5 kΩ 953.6 Ω
¿> R E 2 ≅ 1 kΩ
I ref
¿> R E 1 ≅
V T ln
( )
I0
−I 0 R E 2
=1 kΩ
I ref
−¿
V
+¿−V BE 1− −R E1=86.0 kΩ ¿
I ref
¿> R 1 ≅ V ¿
Finally, we must calculate the power dissipation of each resistor. This is done using the equation
for power:
P R 1=( 200 uA )2 ( 86.0 kΩ )=3.44 mW
Pℜ 1=( 201.33 uA )2(1 kΩ)=0.04 mW
Pℜ 2=( 201.33 uA )2(1 kΩ)=0.04 mW
The circuit, using the determined values has been simulated, and the results are included in section
6.2 In order to do a physical implementation of this circuit, we require standard resistor values,
followed by a simulation of the standard circuit. Luckily the resistor values can be used as
determined in a standard implementation, therefore no modifications are needed.
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