mMmADE EASY India’s Best Institute for IES, GATE & PSUs ras de WE TES Le Series eel Electronics & Telecommunication Engineering Test-4: Electronic Devices & Circuits + Advanced Electronics Topics Analog and Digital Communication Systems-1 Network Theary-2 + Microprocessors and Microcontroller-2 Name: RollNo: [ele | y miBipdela & ‘Test Centres Student's Signature Debi Bhopal) Noida Jaipur Indore tucknaw] Pune] Kelketec) Bhubaneswar] Hyderabad) ns for Candidates EC Question No. 1. Dw fami the appropiate details in the San | Qi 2. Angner must be writen in Engh on a2 4. Use ony bisekblue pen : | a3 4. The space limit for every part of the question is specified in this Question Cum - Q4 Anower Booklet, Candidate should wie | he answer in the space prowided r O ~ 1 i the apace OE 5. Ally page OF portion ofthe page left Blank a6 in the Question Cum Answer Saoklet 2 i rust ee eles stuck ft _a7 — Unk two poges of Ins booklet ore 38 {= proded for rough work, Strike off these two pages after completion of the ‘Total Marks examination, ‘Obtained ob. 5 ature of Evaluatoronot | wee in Page 1 of 60. | Tn MADE EASY Question cum Answer Booklet 1 (@)|_ Calculate the flat-band voltage for a MOS capacitor with a p-type semiconductor substrate having doping concentration N, = 10" cm’, a SiO, insulator layer with a thickness of f,, = 500 A with a n* polysilicon gate with an equivalent trapped charge per unit area Qf, = 101 electronic charges per cm? (Assume €,, = 3.9¢, and the work function difference 6,,, = -1.1 V) [12 marks] ' a i Draped thays My = 10 ¢ chen “4 = ltt} —— te mt | | NT Poty | Pau b o¢ = t- Ge = Sey - Epp ee tv Flat Banal alae “ he = Oe" (y Cox whire Cx = box Fox -i4 ——?t Con = 34x 8BSXIO Sov xr0- 8