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RJH60T4DPQ-A0
Silicon N Channel IGBT R07DS0460EJ0100
Rev.1.00
High Speed Power Switching Jun 15, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
Outline
4
1. Gate
2. Collector
G
3. Emitter
4. Collector
1 2
3 E
Electrical Characteristics
(Tj = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current ICES 100 A VCE = 600V, VGE = 0
Gate to emitter leak current IGES ±1 A VGE = ±30 V, VCE = 0
Gate to emitter cutoff voltage VGE(off) 4 8 V VCE = 10V, IC = 1 mA
Collector to emitter saturation voltage VCE(sat) 1.7 2.2 V IC = 30 A, VGE = 15V Note3
VCE(sat) 2.2 V IC = 60 A, VGE = 15V Note3
Input capacitance Cies 1900 pF VCE = 25 V
Output capacitance Coes 93 pF VGE = 0 V
Reverse transfer capacitance Cres 33 pF f = 1 MHz
Switching time td(on) 45 ns IC = 30 A,
tr 86 ns VCE = 400 V, VGE = 15 V
td(off) 85 ns Rg = 5 Note3
Inductive load
tf 72 ns
C-E diode forward voltage VECF 1.2 1.6 V IF = 20 A Note3
C-E diode reverse recovery time trr 100 ns IF = 10 A
diF/dt = 20 A/s
Notes: 3. Pulse test
Main Characteristics
100
8.8 V
10 V
80 8.6 V
10 15 V
8.4 V
60
8.2 V
1
40 8V
7.8 V
0.1
20
Ta = 25°C VGE = 7.6 V
1 shot pulse
0.01 0
1 10 100 1000 0 1 2 3 4 5
Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)
VCE(sat) (V)
Collector to Emitter Saturation Voltage
120 3.5
VCE = 10 V Ta = 25°C
Pulse Test Pulse Test
Collector Current IC (A)
100
3.0
80
2.5
Ta = 75°C
60
IC = 60 A
25°C 2.0
40 –25°C 30 A
1.5 15 A
20
0 1.0
0 2 4 6 8 10 6 8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V)
2.8 10
VGE = 15 V VCE = 10 V
Pulse Test Pulse test
2.4 IC = 60 A 8
IC = 10 mA
2.0 30 A 6
1.6 15 A 4
1 mA
1.2 2
0.8 0
−25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
80 Pulse Test
Capacitance C (pF)
1000
60
100
40 Coes
Cres
10
20 VGE = 0 V
f = 1 MHz
Ta = 25°C
0 1
0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250 300
800 16
Gate to Emitter Voltage VGE (V)
VGE
VCE
600 12
VCC = 600 V
300 V
400 8
VCC = 600 V
200 4
300 V
IC = 30 A
Ta = 25°C
0 0
0 18 36 54 72 90
tf
100 td(off) 1000
Eoff
tr
td(on)
100 Eon
10 10
1 10 100 200 1 10 100 200
td(off) Eoff
80 800
tf
Eon
40 td(on) 400
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
1 D=1
0.5
0.2
0.1 θj − c(t) = γs (t) • θj − c
0.05 θj − c = 0.53 °C/W, Tc = 25 °C
0.1
0.02 1 shot pulse PDM PW
D=
0.01 T
PW
T
0.01
10 μ 100 μ 1m 10 m 100 m 1 10
10
Tc = 25°C
D=1
1
0.5
90%
L 90% 90%
10% 10%
IC 1%
10%
Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
TO-247A PRSS0003ZH-A 6.14g Unit: mm
6.15
21.13 ± 0.33
17.63
20.19 ± 0.38
2.10 +– 0.2
0.1
4.5 max
13.26
1.27 ± 0.13
Ordering Information
Orderable Part Number Quantity Shipping Container
RJH60T4DPQ-A0-T0 450 pcs Box (Tube)