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SEMICONDUCTOR TECHNICAL DATA by 2N3905/D

    

PNP Silicon
 
*Motorola Preferred Device
COLLECTOR
3

2
BASE

1
EMITTER
1
MAXIMUM RATINGS 2
3
Rating Symbol Value Unit
CASE 29–04, STYLE 1
Collector – Emitter Voltage VCEO 40 Vdc TO–92 (TO–226AA)
Collector – Base Voltage VCBO 40 Vdc
Emitter – Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 200 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Power Dissipation @ TA = 60°C PD 250 mW
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS(1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to RqJA 200 °C/W
Ambient
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) V(BR)CEO 40 — Vdc
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO 40 — Vdc
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — Vdc
(IE = 10 mAdc, IC = 0)
Base Cutoff Current IBL — 50 nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current ICEX — 50 nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc)

1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v
2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
 
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3905 30 —
2N3906 60 —

(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 40 —

2N3906 80 —

(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 50 150

2N3906 100 300

(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3905 30 —

2N3906 60 —

(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3905 15 —

2N3906 30 —

Collector – Emitter Saturation Voltage VCE(sat) Vdc

(IC = 10 mAdc, IB = 1.0 mAdc) — 0.25
(IC = 50 mAdc, IB = 5.0 mAdc — 0.4
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.95

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3905 200 —
2N3906 250 —
Output Capacitance Cobo — 4.5 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 10.0 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie kΩ
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 0.5 8.0
2N3906 2.0 12
Voltage Feedback Ratio hre X 10– 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 0.1 5.0
2N3906 0.1 10
Small–Signal Current Gain hfe —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 50 200
2N3906 100 400
Output Admittance hoe mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 1.0 40
2N3906 3.0 60
Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3905 — 5.0
2N3906 — 4.0

SWITCHING CHARACTERISTICS
Delay Time ((VCC = 3.0 Vdc,, VBE = 0.5 Vdc,, td — 35 ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr — 35 ns
Storage Time 2N3905 ts — 200 ns
2N3906 — 225
(VCC = 3.0 Vdc, IC = 10 mAdc,
Fall Time IB1 = IB2 = 1.0 mAd 2N3905 tf — 60 ns
2N3906 — 75

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
3V 3V
+9.1 V < 1 ns

275 275
< 1 ns
+0.5 V 10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*
10.6 V
300 ns 10 < t1 < 500 ms
DUTY CYCLE = 2% t1 10.9 V
DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0 Cobo
Q, CHARGE (pC)

1000
700
Cibo
3.0 500

300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
t f , FALL TIME (ns)

100 100
70 70
TIME (ns)

50 tr @ VCC = 3.0 V 50

30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time Figure 6. Fall Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

 
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

5.0 12
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA
10
4.0
SOURCE RESISTANCE = 200 W IC = 0.5 mA
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA 6
2.0
4 IC = 50 mA

1.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA

IC = 100 mA 2

0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)

Figure 7. Figure 8.

h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)

300 100
hoe, OUTPUT ADMITTANCE (m mhos)

70

50
h fe , DC CURRENT GAIN

200

30

100 20

70
10
50
7

30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Current Gain Figure 10. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
7.0 5.0
5.0

3.0 3.0

2.0 2.0

1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1.0 V

1.0 +25°C

0.7
– 55°C
0.5

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 13. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 14. Collector Saturation Region

1.0 1.0
q V , TEMPERATURE COEFFICIENTS (mV/ °C)

TJ = 25°C VBE(sat) @ IC/IB = 10

0.5 +25°C TO +125°C
0.8 qVC FOR VCE(sat)
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)

0
0.6 – 55°C TO +25°C

– 0.5
0.4 +25°C TO +125°C
– 1.0
VCE(sat) @ IC/IB = 10 – 55°C TO +25°C
0.2 qVB FOR VBE(sat)
– 1.5

0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 15. “ON” Voltages Figure 16. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

 
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD

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6 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3905/D