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MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 28C3020 is a silicon NPN epitaxial planar type transistor design- fd for UHF power amplifier applications, OUTLINE DRAWING A205 coswax #225, organ a FEATURES © High gain: Gpe = 1008, @t=520MHz, Vec= 12.5V, 3 Pin = 0.3W. 3 ‘© High ruggedness: Ability to withstand more than 20:1 load “| ‘VSWR (all phase) when operated at Vec= 15.2V, | f= 520MHz, Po= 3W. 7 ‘© Emitter ballasted construction. Low thermal resistance: Reh = 15 °CIWITc = 25°C} ‘© Convenient flange type ceramic package. APPLICATION For drive stage and output stage of 400MHz band mobile radio. Te at © cowecron @ EMITTER FLANGE! @ mse © ures eusnce) © iv ewirren) THE ABSOLUTE MAXIMUM RATINGS 11,<25°71 Seal Parmer conor Catacartabae orage % Trine oboe vtoge a0 Coleco fo emi wage 7 Tag | Stage were es ELECTRICAL CHARACTERISTICS «7,-25°c1 srnto Poona Tes conone mo vn Vanes | Ente ten teammate [enna = a Vanco | Coleco be benkdown vnage [STOR R= = 7 Vanco | Coleco nite belaoon vroge [en 10m, Far = 7 a a ce Yori Ea) ee | Beto core ie Woes tv. Ion OTH =| = poe] Po Power Output a0] 33 w — vec=125v,eq-oaw.tesaomne | 22 [a [Tw | | Car oan eps % Note aA Wt, A=150e5, A= Joore pars, ange Ws Bnd covdtone tube han wv. 97 ene MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL PLANAR TYPE ‘TEST CIRCUIT (f= 520MHz) 2 i 1 zon =so0 Uy) #20 AWG Enamed Wie 3 Tins, Si LD. mm Pach 1G 120 ANG Enamad ite 6 Turns Cosenovd, Sm & Up #28 ANG Eramsea We 10 Tun, nm Pach wih den ©. 14mm ap Le La Merosir oars 160m Glass Teton Eg=2.7) (©. 825 200F,A7OODF 1047 in paral TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION VS. COLLECTOR OUTPUT CAPACITANCE ‘TURE ee _ emer caren . { freee. = Ff tenie Bo : 5 8 4 3 * ea Q 8 a 2 8 8 ei oe

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