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  • 172 EE1013 VatLyBanDan1

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    Đặng Ngọc Thưởng
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    vlbd

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    172_EE1013_VatLyBanDan1

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    1 views16 pages

    172 EE1013 VatLyBanDan1

    Uploaded by

    Đặng Ngọc Thưởng
    vlbd

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 16
    u DHQG TpHCM-DHBK Khoa Dign-DT-B6 mén Dign Ti : Q 4 ‘De thi ric nghiém Mén VATLY BANDAN-HKI72. EE 0 [3 ‘Neay thi: 08/06/2018 - Thai gian lam bai: 80 phist. Sinh vién khéng duge sir dung tai ligu va bit bude phai np lai dé sau khi Ho va tén SV: Mssv: Ma-s6 mén thi: EE1013 Ma sé dé thi: 0001 Cake hing 86 doe sit dung trong cde edu hoi q=1.6x 10" C (dign tich dign tit) 11.9 x 8.85 x 10" F/em (hing sé dign mdi ban dan Si) & Vy = kT/q = 0.026 V 6 T=300°K «DS a viét tit cia “ap 56”. Chi ¥: © Dé thi c6 50 cau. (Tra lai 1 cfu: ding due 0.2 d, sai bitri0.1 d, va khéng tra loi: 0 d) + Néukhéng c6 ghi nhigt d6 dang xét thi T= 300°K. ‘* Transistor (BJT ho§c MOSFET) néu khéng cho V4 thi hiéu V4= 2 V (hay 4= 0) * Vi BIT 6 tich eye thugn ta c6 V3y{NPN) = VesdPNP) = 0.7V (Si) va ta sé tinh gan diing Jc» Jp © BIT a mién bao ha: /pr:,0(NPN}=ViisuPNP)=O.8V Va Versa NPN)=V isa PNP) =0.2V. 1. Bude thir ba trong 4 bude chinh cia céng nghé planar li a)quangkhic _) kim loaihéa_—_c) cdy ion hoc Khuéch tn d)oxyhéa_——e) Luyén kim 2. Chuyén tiép bude p’n 6 diéu kign can bang co . a)We>>Wy b)We< Wye) c. 4 BS trén ddu sai 3. Khi phan cuc thun, dign dung chuyén tiép PN xem nhu do dign dung, i a)khuéch tin b) miénnghéo¢) tich lily 16d) Zener, ¢) 0d 4 DS trén déu sai 4. Xét mét chuyén tiép PN (Si) duge phan cyc thudn bang ngudn dong hing, khi nhigt 46 ting thi syt dp thuan trén chuyén ti a) khdng déi b) ting c) Bing it ¢) ca 4 DS trén déu sai 5. Dong dign nguge ciia chuyén tiép pn sé z a) khéng 46i b) ting ¢) tang it e) ca 4 DS ten déu sai 6. Khi ké dén Rs, dic tyén thuan cia chuyén tfép PN sé so véi chuyén tiép PN ly tuéng a) dich lén b)dich xuéng _c) dich sang tréi_d) dich sang phai_e) cd 4 DS trén déu sai 7. Xét dac tuyén that cia chuyén tiép PN, dong dién thing thé @ phan cye thuan quanh Vow. a) dich +b) tai hop. ©) khugch tan d) rd e) ca 4 DS trén déu sai ‘& Chuyén tiép PN - Thing tin cho 10 clu tiép theo (dugc ding dé dénh gid ABET): Xét chuyén tiép pm (ding Si) khi chura c6 phan cue ¢8 céc ndng dé tap chit Na= 3x10"° em” vi Np = 5x10" em’. Biét ban dn Si c6 ni = 1x 10" cm”, chuyén tiép pn nay c6. 8. Ti sé cia We/Wy li a) 3/5 b) 5/3 3 as €) ca 4 DS trén déu sai 9. ign ép ngi tai Vp la : 2) 0.768 V b)0.775V ce) 0.782.V 4) 0.789 V €) cd 4 DS tren déu sai 10, Be rong mién nghéo W a)3.31x10 "cm —b) 2.68x10%cm ¢) 2.35x10%em d)2.41x10'cm e) ca 4 DS trén déu sai UL, Trong_mién nghéo, 46 Ion cia dign trubng ewe dai En 1B a) 4,92x10" Viem b)5.47x10* V/cm —_c)6.12x10* Vem) 6.71x10" V/cm _e) ca 4 DS trén déu sai 12, Néu phn cyc nguge véi Vg = 4.36 V thi bé rong mién nghéo W mdi la a) 4x 10°om b)S xto%em —c) 6 X10%em —d) 7x 10em ) € 4 DS tren du sai 13, Néu phan cye nguge voi Vp = 4.36 V thi chuyén tiép pn nay c6 dign dung min nghéo Cap (Fim?) a) 1.82 x 10° b)L7Sx10% —c) 1.63x10% dy 1.48 x 10* €) ca 4 DS tren déu sai 14. Xét phan cye thugn sao cho déng thugn Ip = 5 mA, néu thai gian di qua chuyén tiép pn nay ty = 14 ns, Khi 6 né e6 dign dung khuéch tan Cp li a) 2.13 nF b) 2.35 nF c) 2.69 nF 4) 2.92 nF e) ca4 DS trén déu sai 18. Néu phan cye thugn sao cho dng thudin Ip = 5 mA, thi chuyén tiép pn nay c6 dign tres AC (r4) IA a)282 b)3.79 9452 4529 €) 644 DS tren déu sai Bé thi VLBD-172_Dé | ~ Trang 1/4 16, Cho mgch & hinh 1 véi V; = 5.7 V va V2" 4.7 V, hay diing m6 hinh diode syt 4p hing (Von = 0.7 V) dé xde dinh Zr va Ve trong mach 7 a) fy=SmA va Vy=7V b) f= SmAvaFy=47V y= 4mAva le =5.7V Dlx ©) cd 4 DS trén déu sai 17. Cho mach bn dp 6 hinh 2 véi Vs= 8 V, R= 100 @ va Zener €6 Vz~ 5 Vs lonn™ 5 mA Va Lemar = 20 mA. Bé cho mach vn con én dp thi din tro tai Ry, phai thue dai gid tri (xap xi): a) 1209 Viv d) Ven

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