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PNP Transistor
PNP Transistor
PNP transistor is another type of Bipolar Junction Transistor (BJT). The structure of the PNP
transistor is completely different from the NPN transistor. The two PN-junction diodes in the PNP
transistor structure are reversed with respect to the NPN transistor, such as the two P-type
doped semiconductor materials are separated by a thin layer of N-type doped semiconductor
material. In PNP transistor the majority current carriers are holes and electrons are the minority
current carriers. All the supply voltage polarities applied to the PNP transistor are reversed. In
PNP transistor the current sinks in to the base terminal. The small base current in the PNP
transistor has the ability to control the large emitter-collector current because it is a current-
controlled device.
The arrow for BJT transistors is always located on the emitter terminal and also it indicates the
direction of conventional current flow. In PNP transistor this arrow indicates as ‘pointing in’ and
the current direction in PNP is completely opposite to the NPN transistor. The structure of PNP
transistor is completely opposite to the NPN transistor. But the characteristics and operation of
the PNP transistor is almost same as NPN transistor with small differences. The symbol and
structure for PNP transistor is shown below.
Here the base terminal acts as input and the emitter- collector region acts as output. The supply
voltage VCC is connected to the emitter terminal and a load resistor (RL) is connected to the
collector terminal. This load resistor (RL) is used to limits the maximum current flow through the
device. One more resistor (RB) is connected to the base terminal which is used to limit the
maximum current flow through the base terminal and also a negative voltage is applied to the
base terminal. Here the collector current is always equal to the subtraction of base current from
emitter current. Like NPN transistor, the PNP transistor also has the current gain value β. Now let
us see the relation between the currents and current gain β.
IC = IE – IB
The DC current gain (β) for the PNP transistor is same as the NPN transistor.
Here output current is collector current and input current is base current.
β = IC/IB
IB = IC/β
IC = β IB
Current gain = Collector current/ Emitter current (In common base transistor)
α = IC/IE
IC – α IC = α IB + ICBO
IC (1- α) = α IB + ICBO
Since β = α / (1- α)
IC = β IB + (1+ β) ICBO
The output characteristics of PNP transistor are same as NPN transistor characteristics. The small
difference is that the PNP transistor characteristic curve rotates 1800 to calculate the reverse
polarity voltages and current values. The dynamic load line also exists on the characteristic curve
to calculate the Q-point value. The PNP transistors are also used in switching and amplifying
circuits like NPN transistors.
Ans.) Here
VB = 1.5V
VE = 2V
RB = 200kΩ
Base current,
Emitter current,
Collector current,
Finally we get the current gain values of a considered PNP transistor are,
Transistor matching is nothing but connecting the both NPN and PNP transistors in a single
design to generate high power. This structure is also called as “matched pair”. The both NPN and
PNP transistors are called complementary transistors. Mainly these matched pair circuits are
used in power amplifiers, such as class B amplifiers. If we connect the complementary transistors
which are having the same characteristics then it is very useful to operate the output stages in
motors and large machinery designs by producing high power continuously.
The NPN transistor conducts only in the positive half cycle of signal and the PNP transistor
conducts only in the negative half cycle of the signal, due to this the device operates
continuously. This continuous operation is very useful in the power motors to produce
continuous power. The complementary transistors need to have same DC current gain (β) value.
These matched pair circuits are used in motors controlling, robotics and power amplifier
applications.
PNP Transistor Identification
Generally we identify the PNP transistors with their structure. We have some differences in the
structures of both NPN and PNP transistors when compared. One more thing to identify the PNP
transistor is generally the PNP transistor is in OFF for positive voltage and it is in ON when small
output current and negative voltage at its base with respect to emitter. But to identify them with
most efficiently we use some other technique by calculating the resistance between the three
terminals, such as base, emitter and collector.
We have some standard resistance values for identifying the both NPN and PNP transistors. It is
necessary to test each pair of terminals in both directions for resistance values so totally six tests
are needed. This process is very much useful to identify the PNP transistor easily. Now we see
the operation behavior of each pair of terminals.
Emitter-Base Terminals: The emitter-base region acts as a diode but it conducts only in one
direction.
Collector-Base Terminals: The collector-base region also acts as diode which conducts I only one
direction.
Emitter-Collector Terminals: The emitter- collector region looks like a diode but it will not
conduct in either direction.
Now let us see the resistance value table to identify both NPN and PNP transistors as shown in
the following table.
The circuit in the above figure shows the PNP transistor as a switch. The operation of this circuit
is very simple, if the input pin of transistor (base) is connected to ground (i.e. negative voltage)
then the PNP transistor is in ‘ON’, now the supply voltage at emitter conducts and the output pin
pulled up to the larger voltage. If the input pin connected to the high voltage (i.e. positive
voltage) then the transistor is ‘OFF’, so the output voltage has to be low (zero). This operation
shows the switching conditions of a PNP transistor due to their ON and OFF states.
PNP transistors are used when we need to turnoff something by push a button. i.e. emergency
shutdown.
The emitter-base (VBE) battery connects the p-type emitter which is forward biased whereas the
collector-base (VBC) battery connects the p-type collector which is reverse biased. In this case,
the majority charge carriers in emitter are holes which are repelled towards the base. As the
base layer is thin, thus only little interaction occurs when electrons and holes combine. Most of
the holes reach the collector. The current is carried by holes in p-n-p transistors.
In an NPN transistor, the current flows from the collector (C) to the Emitter (E), whereas in a PNP
transistor, the current flows from the emitter to the collector.
PNP transistors are made up of two layers of P material with a sandwiched layer of N The NPN
transistors are made up of two layers of N material and sandwiched with one layer of P material.
In an NPN transistor, a positive voltage is given to the collector terminal to produce a current
flow from the collector to For PNP transistor, a positive voltage is given to the emitter terminal to
produce current flow from the emitter to collector.
The working principle of an NPN transistor is such that when you increase current to the base
terminal, then the transistor turns ON and it conducts fully from the collector to emitter. When
you decrease the current to the base terminal, the transistor turns ON less and until the current
is so low, the transistor no longer conducts across the collector to emitter, and shuts OFF.
The working principle of a PNP transistor is such that when the current exists at the base
terminal of the transistor, then the transistor shuts OFF. When there is not current at the base
terminal of the PNP transistor, then the transistor turns ON.