TOSHIBA TC74HCO4AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCO4AP, TC74HCO4AF, TC74HCO4AFN HEX INVERTER (ote) The JEDEC SOP (FN) isnot available in Japan. The TCT4HCO4A is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. ‘It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages, including buffered output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against si discharge or transient excess voltage. FEATURES: + High Speed: + Low Power Dissipation. + High Noise Immunity toa = 6ns\typ.) at Veo = 8V |vA(Max.) at Ta= 25°C Vas = Vo. = 28% Vec (Min.) (Dipta-P-300-258) Weight :0.959(Typ.) “Ge 1 F (soP14-7-300-127) Weight: 0.189 (Typ.) Fu (S0L149-150-1.27) Weight :0.129 (Tye) PIN ASSIGNMENT. ‘+ Output Drive Capability “10 LSTTL Loads 1’ 1[f 1] 14 Voc + Symmetrical Output Impedance lou | =lo. =4mA(Min) re a + Balanced Propagation Delays---+tpun=toH q W 3 «+ Wide Operating Voltage Range Vog (opr.) =2V~6V a3 HH 12 6Y 1 Pin and Function Compatible with 7806 wa th¥ tn sa aa sh YH sr wv 6Th¥ fs as ono 7} ¥ tie ay (TOP VIEW) IEC LOGIC SYMBOL TRUTH TABLE 8 2A A Y oe L H “a ce 4 L ea al era econ Sete sc spetiatrs Xs. pease Leap rnd the precoutons nd co TPIS pau Reena, remuprdator dances Sanaa os leg Ik ted & 1997-08-07 175TOSHIBA TC74HCO4AP/AF/AFN ABSOLUTE MAXIMUM RATINGS PARAMETER syB0L VALUE UN eee ee ee Supply Voltage Range Voc = 05-7 Vv =40°C~65°C. From Ta =65°C DC Input Voltage Vin, =05~Vec 0.5, Vv to a at oetiied DC Output Voltage Vour =05=Vec +05 Vv 300m. Input Diode Current Iie +20 mA (Output Diode Current lox. +20 mA DC Output Current lout +25 mA DC Voc /Ground Current | lec +50 mA Power Dissipation Po_| 500 (01P)"/180(S0P)_|_mW Storage Temperature Tag =65~150 cs RECOMMENDED OPERATING CONDITIONS PARAMETER [syMaOL VALUE UNIT Supply Voltage Vee 2-6 Vv. Input Voltage Vin O-Vee Vv Output Voltage Vour O=Vee Vv (Operating Temperature | Topr =40~85, *e (0~ 1000(Vce=2.0V) Input Rise and Fall Time | ty te | 0~ 500(Vce=4.5V) ns 0~ 400(Vic=6.0V) DC ELECTRICAL CHARACTERISTICS PARAMETER |syMBOL| TEST CONDITION hee eae UNIT] ee zofrsop =] = [350] = igh tavel =k = it Vege Vin a5] 318 = [ERI = |v 20, = | = [os] = [os Vow: eve = = teeta Waage ve as) — | = [1a] = | 1s] v zo} p25] = 178 te-2oa [as] aa [28 | = [42 | = aor tee = Output Voltage Vou Vin or), Soles eo eo y eseamalres aro eoul genie olpe iscfoma| 85] $28 | $30 [ = [$38 | = 30} = | 90 o3 a sence, | vm | Yes, (ocmet_[8a] = [88 18 |S LR | jutput Voltage ot he fT : a Vor lo =4_ mA 45; — 0.17 | 0.26 - 0.33 mzgama [88] = [833 [838 | = | 833 Input Leakage Current dw Vin= Voc of GND 6.0} — — | +01 —_ j#10 A Quiescent Supply Current Tec Vin= Vcc or GND 60; — Ea 1.0 = 70.0 |“ Fe ee TUES Beh GN AE ae SS The [niermaton comsined hee presented anys 2 gue fr toe gazicatons of aut preducs Ki responsi assured by TOSHIA CORPORATION thal Und hy natal prety 8 eer ie, eee a akan eo om me Ree Sed by enon © The intormation contained hereit fe agect 0 change 1997-08-07 _ 25TOSHIBA TC74HCO4AP/AF/AFN AC ELECTRICAL CHARACTERISTICS ( C. = 15pF, Vec= 5V, Ta= 25°C, Input t= ty=6ns) PARAMETER SYMBOL ‘TEST CONDITION MIN. TYP. MAX. [UNIT] th Output Transition Time | {* 7 4 8 tout Propagation Delay Time | {°* = 6 | ‘AC ELECTRICAL CHARACTERISTICS (C.=50pF, Input t,=t=6ns) Tats ]Ta= 40-85% PARAMETER. symeot | TEST CONDITION pal ara oS aa a aun . 20 [ - | 30 | 75 | - | 95 Output Transition Time My 45 | - | “3 | 5 | - | 19 a so| - | 7] 3 /|- | 6], : 20] =| 7 [7s | = | 35 Propagation Delay Time ee 45 _ 9 15, = 19 2 u tone 6.0 = 8 13 = 16 input Capacitance Cu = [os Po [= oT, Power Dissipation Capacitance | Cop (1) = [a f= ;-T- 1" Note (1) Cyp is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: lec (OF) = Cro * Vec * fn ec’ 6 (Per Gate) 1997-08-07 35