XZH-P-ELXE ELECTRONICS AND TELECOMMUNICATION ENGINEERING PAPER—I i Maximum Marks"; 300 QUESTION FAPER SPECIFIC INSTRUCTIONS Time Allowed Please read cack cf the following instructions carefully | before attempting questions There are EIGHT questions Candidate has to attempt FIVE questions in all. Y Question Nos, 1 and § are compulsory and out of the remaining, THREE are to be attempted choosing at least ONIZ question from each Section. i ‘The number of marks carried by a question/part is indicated against it. Wherever any assumptions are made for answering a questiorl, they must be clearly indicated. Diagrams/Pigures, wherever requivcd, shall be drawn in the’space provided for answering the question itself. i Unless otherwise mentioned, symbols and notations carry their usual standard meanings, Attempts of questions shall be counted in sequential order. Unless struck off, attempt of a question shall be counted even if attempted partly. Any page or portion of the page left blank in the Question-cum-Answer Booklet must be clearly struck off. i Answers must be written in ENGLISH only, Values of ccnctants which may be required & : Blectron ch: -1-6%107!? coulomb Free space permeability = 4x10"? henry/m Free space permittivity = (1/36x)x10°9 farad/m . Velocity of light in free space = 3x10° m/s i Boltzmann constant 1.38 x10-95/K 6-626x10- Js Planck constant XZH-F-ELXE/64 1 (PTO.1 SEcTION—A iH © (@)~ ( Calculate the temperature at which silicon (Si) semiconductor terids to behave like a metal. : (@) rove that reverse saturation current approximately doubles for ‘every’ 10°C rise in temperature in a semiconductor diode. 6 a (@ Prove that when two resistors are connected in parallel, the equivalent resistance of the combination is always smaller than that of smaller resistor. eo pe fi) A conductor has resistance 5-49 at 20°C and 7@ at 100 °C. Determine the resistance of the conductor at 0 °C, . ; 6 (6) What is dine imperfection defect’ in a crystal? How does it affect the properties of a metal? 12 (4) () Enumerate the different performance indices based on which an engine: selects an instrument. ~ 5 (i) What is the SI system of units? Mention some (at Ieast four) well-defined units maintained by the International System of Units. 7 (¢) In the circuit shown in the figure below, I=1 mA is a DC current and vp (fis a sinusoidal voltage with small amplitude rete 2 40) C= 10 nF : the mle Representing the diode by its small signal resistance 7, which is a function of J sketch the circuit for deter-niving v9(t) and thus find out cutoff frequency f,,. (Assume V; =25 mV at room temperature) 12 XZH-F-ELXE/64. 2(b) () ( Pind the equilibrium hole concentration py at 300 K of Si sample doped with phosphorus impurity if Fermi level energy (Ep)of doped Si is 0-407 eV more than intrinsic level energy (;). Given n, =1-5!x10!° atoms/e: 1a ¢ KP =0-0259 eV. 10 (i) A filter capacitor C is used to smooth out the pulses from the ful rectifier as shown in the figure below : 220V 50 He AC nt yf i CF Sato Ke T i Find the value of C so that the steady current supply to load Ry! can.be maintained, 10 () What is the principle of nanomagnetism? Based ort the specific properties ! of nanomagnetism, write its applications in engineeringsfield. 2 (i) Classify insulating materials according to their temperature stability limit and give few examples of each grade. a () What are the signal conditioning requirements for measurements with strain gauges? How can you compensate errors flue to temperature in strain gauge measurements? 10 (i) A piezoelectric transducer is subjected to a force of 6 N. The dimensi the transducer is given as 6 mm 6 mm x 1:3 mml : and the dielectric constant of the transducer are given as 160 pC/N and 1250x10"!! F/m respectively. Calculate the ras generated and the deflection caused to the surface, The Young’s modjilus of elasticity of the material is given as 12x10 N/m? 10 (i) Calculate the range of base resistance (,) so that transistor 7’ never operates in saturation region + 10 10 Ka Ry ny, Win L. Bc = 50 lov i I XZH-F-ELXE/64 3 | [P.T.O.