Faculty Brief Profile:

Full Name: MD. ARAFAT MAHMUD

Designation:
Educational Qualifications:
(a) PhD:
(b) M.Sc. Engineering
(c) B.Sc. Engineering
Email (official):
Official Phone Number:
Personal Mobile Number:
Office Room Number:
Lecturer, Department of EEE, UAP
N/A
M.Sc in Electrical and Electronic
Engineering, BUET, Bangladesh,
December, 2014
B.Sc in Electrical and Electronic
Engineering, BUET, Bangladesh,
April, 2012
mahmud.eee@uap-bd.edu
+880-1930378552
C-307

Information for Faculty Full-Profile:

Md. Arafat Mahmud has obtained his B.Sc degree in Electrical and Electronic
Engineering (EEE) from Bangladesh University of Engineering and Technology
(BUET) in April, 2012. He is going to complete his M.Sc in EEE from the same
institute on December, 2014.

He has joined the Department of Electrical and Electronic Engineering, UAP on 1st
November, 2012 and since then he is working as a lecturer of the department.

His subject of interests are Semiconductor device modeling, Photovoltaic devices

and Renewable Energy Technologies.

 Thesis / Research / Publication :

M.Sc thesis topic :
ANALYTICAL MODELING OF THRESHOLD VOLTAGE AND DRAIN CURRENT OF
GATE AND CHANNEL ENGINEERED DOUBLE GATE MOSFET

B.Sc thesis topic :

A LOW NOISE AMPLIFIER (LNA) DESIGN FOR AN ULTRA WIDE BAND RECEIVER
USING 0.18 µm CMOS PROCESS
 Publications :

1. “A Two Dimensional Analytical Modeling of Drain Current and Subthreshold

Slope of a Triple Material Double Gate MOSFET”, by Md. Arafat Mahmud and
Dr. Samia Subrina., Accepted at 8th International Conference on Electrical &
Computer Engineering (ICECE), IEEE in 2014.

2. “Analysis of Device Performance of a Heterojunction Solar Cell with

Amorphous Intrinsic Thin Layer (HIT) based on Device Parameters”, by Md. Arafat
Mahmud, Mushfika Baishakhi Upama , Md. Tashfiq Bin Kashem and Monzurul
Islam Dewan., Accepted at National Conference on Electrical & Communication
Engineering and Renewable Energy (ECERE) in 2014.

3. “A Two Dimensional Analytical Modeling of Threshold Voltage and Drain

Current of a Triple Material Double Gate Double Halo Gate Stacked MOSFET”,
by Md. Arafat Mahmud and Dr. Samia Subrina. (Submitted at Semiconductor
Science and Technology, IOPscience in 2014).

 Work Experience:

Lecturer,
Department of Electrical and Electronic Engineering
University of Asia Pacific
November, 2012- present