B-W- 03 EEI30 Prof, King Summary Notes FoR P-N Junctions 1) Terminology N, net dopant concentration on p-type side N, net depant concentration on type side 2) pn Tunction Electrostatics A region depleted of mobile charge carriers exists in The vicinity of the metallurgical junchon, due to mobile charge carrier redishibuhon Choles diflasing into the n-type rejien, and electrons aithesing inte Pre prtope region, initially ) Thais region extends 0 distance 2, into The p-type side, and @ distance A, into The n-hpe side. “depletion Approximation” + np <<|Ny-Ngl sn depletion reyion =gMy mS charge density ela= 4a AyEx The depletion ceston extends furtrer sate the side which is more lightly coped. Es - See fe For « step junchon, the electie- Fela distribubon 8 [Ean looks Whe E09 Note: =O in the quasi-nesbrat Prtype ancl nope, regions (is-%p, %>%q) slope= The elechic Reld serves te counteract the diffeston of mobile charge carriers. At equilibrium (Vg=0), Phere is no net current flow _ aceass the junchon. The electric potental olistributon is chained by integrating the electre Field dirtribution (V =~ fEdx ) For a step junction, the clechic-potential distri bution looks like vo Be paar Note that the grea underneath the E(x) curve 1s eguad a. Fe the voltage olropped across the deplehon rezion, _ and that most of this voltaze 1s Areppecl across the mor lightly depet side.In equilibrium (Ug= 0), the total voltaye dropped across the depletion region is equal to the built-in potential Visi, which 1s due +e the work-fameton difference betieen the p-type and n-type regions aie (e;- cas ee (, ~&;) n-side ff . Eg lz +s cbegenerate p-side. where (Es -Ee do sie = Kr Ln (Ma/y,) .o. nomdezenerade peside Ech». degenerate n-side e,- Ey = (Ep - Ei)y-sine kerLn (Non)... nonclegenerate n-sidle ke Na No TS oth sides are nonedeseneralely eloped, Vy = dn (“Aat) When an external bias voltage V,z#O Is applied, the toted voltage dropped across the junchon 1s Vy - Vy Vy is detined de be positive when the voltase applied to the poside is higher than the voltage applica te the n-side: gques!-newbral region pletion, resion (Cis very anal) ee ae age (E is verysmatt) a ty, “Kp Oper xn x ohmic contact Ohmic compact o (excess carrier (excess carrier concentrations 0) concentrations = 0) Note that a positive Vy serves te counteract the built-in poterhal Yi. (This is why the total volpage drep ped across the junchon is reduced by Vy.) A negative Vg serves te reinforce the builtin gotental.