TOSHIBA 2SK2376 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L?--MOSV) 28K2376 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS 70-2208, Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. ¢ 4V Gate Drive © Low Drain-Source ON Resistance: Rpg (oN)=18m0 (Typ.) ¢ High Forward Transfer Admittance : [Yjq|=408 (Typ.) © Low Leakage Current : Ipgg=100/-A (Max.) (Vpg=60V) ¢ Enhancement-Mode — : Vin=0.8~2.0V (Vpg=10V, Ip=ImA) MAXIMUM RATINGS (Ta =25°C) CHARACTERISTIC sympo | RraviNG | UNIT oe . « 3} Drain-Source Voliage Vo 60 To} 2 Beal wear sinky Drain-Gate Voltage (Rqg= 20k) Vor 60. Vv__ [pe sounce Gate-Source Voltage Vass £20 Vv DG. 1D 45 a Drain Current Pale —|“Ipe 180 z Drain Power Dissipation (Te=25°) | Pp 100 Ww ‘Single Pulse Avalanche Energy™ EAS 701 md) ‘Avalanche Current TAR 5 A Repetitive Avalanche Energy* EAR 10 ma soawac (Channel Temperature Teh 150 *C 30 ae Storage Temperature Range Tag =s5~150 | °C 7 4 THERMAL CHARACTERISTICS 12 CHARACTERISTIC SYMBOL | MAX.) UNIT ‘at [Thermal Resistance, Channel To Case RinGha | 125 PO7w]) 22:02| | Lasso» [Thermal Resistance, Channel To Ambient | Reh ch.a)| 883 [C/W]| Note; LL * Ropotitive rating ; Pulso Width Limitod by Max. 1. cate junction temperature 2. DRAIN (HEAT SINK) ** Vpp=25V, Starting Te =25°C, L=471 pH, RG=250, 3 SOURCE Iqg=45A [SEDEC oh 1 a BIAS = is transistor is an electrostatic sensitive device. Please handle with caution. TOSHIBA _2-1082B Weight : 15g sss0n16Ai2 OTOHBA,F oopaly worRng (p,/mpoye, Te Gully ond Ge relay, prosuce, Neverhelen, semconaiqy caves general can SOUTER aru 18 chvere anders of sty, and'to stoi auatons in ch & mafoncion of elute t's FOShea prod ud cate 1 eh human body any of damoge co prop fn devoapng You! srsue tra TOSHIBA’ procot ar ued win species Sperntnsanae eft len tare rods Speci. Abs Baba Yaep mind te precovions and nde ons the © CBhetieRn ft ry inargenens of checual Proper arcu’ okt tte repute, wach iho a. ee i sbject to change without nonce ewer stmonducterRelsbiy Harabook raion contain etek pesetied only ab a gude for the applcations of our products No reponsbily 1 agumed by, TOSHIBA © He'intormaton conttved he 1998-11-12 15TOSHIBA 2SK2376 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION man. | Typ. |Max.| unrT] Gate Leakage Current, Tess _[Vas=+16V, Vpg=0V — | = [#0] pa Drain Cut-off Current Ipss__|Vpg=60V, Vas=0V = | = J i00 [na Drain-Source Breakdown _ _ Voltage (Bry Dss|Ip=10mA, Veg=0V oo | — | — Gate Threshold Voltage Vin___[Vpg=10V, Ip=imA os | — [| 20 Drain-Source ON Resistance [ipg(ony }YGS=4V-1D=25A =} 8) 3! no — | sl 7 Forward Transfer Admittance Nel |) -) 8 Input Capacitance Ciss — | 3350 | — Reverse Transfer Capacitance Cres = | 0] — | F (Output Capacitance Coes = [i600 | — Rise Time ty — | 2] — n-on Time | ton = 5) — Switching |Twen Time | to ® ‘Time ns Fall Time © — | 6) — Turn-off Time | tof — | 180) — Total Gate Charge (Gate- Source Plus Gate-Drain) % = [= (Gate-Source Charge Qes = | mw] — | *° Gate-Drain (“Miller”) Charge | Qua — | «| — SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION wan. | Typ. | Max. | UNIT] Continuous Drain Reverse Current TDR = ~[-] #4 Pulse Drain Reverse Current | _IDRP = = | = [180 [7a Diode Forward Voltage Vpsr _[IpR=45A, Vag=0V ee Reverse Recovery Time ter __|IpR=45A, Vas=0V — [120 | — Tas Reverse Recovery Charge Qe |aipR/at=50A/ ys — [oz] — Tc MARKING Boel rvpn lot Number fe L- Month (Starting from Alphabet A) UY Year (Last Number of the Christian Era) T998-11-12_2/5TOSHIBA DRAIN CURRENT Ip (A) : ‘® Ms FORWARD TRANSFER ADMITTANCE Ip - Vos 0a 08 DRAINSOURCE VOLTAGE Vng V) Ip - Vos [eo a6) f= of 00 eT GATR-SOURCE VOLTAGE Vos W) 100 [yt = ID ‘COMMON SOURCE sal aol DRAIN CURRENT Ip 2SK2376 I~ vos wy counon source soe . 4 2 al 2 2 a a DRAINSOURCE VOLTAGE. Ys «) - Vos ~ Vos CORTON SOURCE 109) - 2 = os 3 og 2 od 2 oat a " z c 6 # O @ WW Garesounce voLTAGR Vos. ve Rs cow) = 1D couonsounce g_|secase BB i 5 DRAIN CURRENT Ip (A) 1998-11-12 3/5