SPECIFICATION (TENTATIVE) Davies Nama 3 High-Side Inteligant Power Sustoh IPS) Troe Hane 2 50484 Spa. No. . MTSE gage Fuji Electric Co, Lid. Matguineto Factory Fuji Electric Co.Ltd. MTSF 9488 1’ St T ae 008-37 = DATE [ FAME. ArPROTeD 3 {2 d4it—w2| Ff———— bE 1.8cope ‘This specifies Fuji High-Side Intaligent Power Switch FEO44H 2.Conetruetion Selfsetation structure: ‘Output pad; N-channel enhancement moda 3.Application Far switching 4.Outview SOP-8 (BIAISC-87) Ouiview See te 6/5 Page S.Absolute maxintumn ratings (at Te=25°%C. unless otherwise specified } Dascriptian Symbol | Characterisics | Unt | Cenditons [Supply voltage Mec | 80 vv | Pulse 4.25 sec “Supply vattage Moa 3 v pe Continuous Drain current Ho a [oa Input voliage [Min B36 Veg Hf.3 v De [Siatus currant Icy 5 mA Maximum power dissipation Pa 16 w fle JOperating junction tameerature — [T) 150 ed {Storage temporaiure renge Frans “85 ~ 150 ° * Surface Mounted an 1000mn" PCA(FR-4) 4 Electrical characteristics {at To=25%, unless otherwisa specified.) Dascription ‘Symrbal Conditions Characteristics wait min. | yp | imax JOperating voltage Moo 8 2 iv Standby current Ibe a [oma Input voltage Vie, 28 T~ vid Mins t 15 v [input current hac Voe=13¥ Was 12 aa jOnesiate resistance [Rosny [Veo=19 k= 258 I oat | a [Cutput leakage ku os | ma current Fuji Electric Co.,Ltd | MTSF 9488 (3/5 T oanJ [Deseriation | Syrical Céndtions Gheractedisics unit min | yp. [max }Over-current lec Mage t By 3: 6 A detection #* | | IPeak-currantunder [Pea fY¥co= 13 40] im Overcurrent detection i [Ower-ter npsrature: \T vip. Voce 13 450 200 ay j shutsown leversvaliags New 26 33 |v shusown : Tusneon Time en | 10 | «8 Trait Tine tan a0 | ps Istaws voRage ews Ryetoa O4 ¥ beims Status leakage Thetesi R210 wo lad surrent [ ! loupurciamp Mare [Mecet3¥ Lat OR -60-Ge3 160-Vee] Vv ! woliage ++" MV =O L=10rmH _t Diode forward so MineOV¥ p64 1 of ov on-voltage lopen-ioad Receen [Voom 13 8 so | ke detectian n=O i “be At ver-current deieetion,the device moved ewitiing made, -pre SOVEVOOVelamp GOV _ OF 7.Thermai resistance Description ‘Symeol Conditions Characteristics Unit | . fen, typ. max, Thermal Resistance — |RRth(ic) [Junction - case 47 | eon : Rena) [aunction - ambient +e) . 8h | OA seret Surface Mounted om 1000mni PCB (FR-4) Fuji Electric Co.,Ltd MTSF 9488 5 EH we ps-052, Tratis Table [inaut valtage [Status voltage Gutpur voltage | Remarks Normal epezatton L L L ig H H [pen L i L Coen sad | L H 1 4 Auto reatars Ger current | E L i L LH L ! L 1 Tanperature } L L j L Auto-restact 14 L } c | Over Yoltese | L L L Aytorragtart | [oa H L §. Timing Chart ve th pes “emo ange lan afcn he 1 Fuji Electric Conltd. | wtor age 47, EE] Ln i Hod—06=03v 2 1 ‘ 1 Voltage | source + ction, i ao Over éufrent T aseteczion t sT —~O pot __ oO GAD 14, Dur View: - 3 é = ei L. [| JIL s 3 | 3 | Fuji Electric Co,Ltd il wrsF 9488/5 R04 -G04-03,