2rarzor PLN diode, Scholky Barrer Photodiode, Avalanche Photodiods| RF Wireless World HOME ARTICLES TUTORIALS APP.NOTES VENDORS SOURCE TERMINOLOGY ACADEMIC T&M CALCULATORS NEWS, GENERAL BOOKS DOWNLOADS CONTACT SITEMAP Home of RF and Wireless Vendors and Resources One Stop For Your RF and Wireless Need P-I-N diode vs Schottky Barrier Photodiode vs Avalanche Photodiode- Difference between P-I-N diode,Schottky Barrier Photodiode,Avalanche Photodiode This page compares P-ILN diode vs Schottky Barrier Photodiode vs Avalanche Photodiode and mentions basic difference between P-I-N diode, Schottky Barrier Photodiode and Avalanche Photodiode. All these diodes function as optical detectors or photodetectors. Function of photodiode is to convert light signal into either voltage or current based on mode of operation. Photodiode is designed to operate in reverse RF WIRELESS TUTORIALS SG NR | Zigbee | z-wave | Bluetooth | GSM | UMTS | LTE | WLAN | 802.11ac | loT | RADAR | satellite | Waveguide | POPULAR TUTORIALS DECT] ISDN] ATM] WBAN| TransferJet| BLE| Femtocell] HSPA| BACnet| hitpilmwwwreless-world.comTerminalagylP--N-clode-ve-Schottky-Barier-Phatodiade-ve-Avalanche-Phatodiade.him! 182rarzor PLN diode Scholky Barrer Photodiode, Avalanche Photodiods| bias condition. It has two modes of operation viz. Ethemet| TETRA| photoelectric effect and photocurrent. Underwater Wireless| 5G| LiF Different type of materials are used in the manufacturing of LoRa| NFC| photodiodes based on wavelength of operation as Infrared| RF mentioned in the table below. Refer Photodiode vs Measurements| Phototransistor® for more information. VSAT| Diode] $S7| Networking] Network Security| Material EM spectrum FITHI KNX! WAP| Wavelength(nm) Mobile IP| Optical Wireless| Silicon 190 to 1100 POPULAR Germanium 400 to 1700 TERMS (cori > Indium Gall 800 to 2600 Terminology Index| Indium Gallium to WiDi vs WiFi] RF Arsenide rene Components| Lead(II) Sulfide < 1000 to 3500 Optical Components| GSM The diodes designed to use as photodiode will have P-I-N junction rather than P-N junction. They are packaged with window or connection with fibre so that light will reach the sensitive part of the device. P-I-N Diode channels| LTE channels| CSMA- CDICA| LAN vs PAN| NEC Tag vs Reader] VDSL vs G.fast| Sensors| wireless PHY| Diac vs Triac| JUGFET vs MOSFET| loT Wireless| RF Over Fiber| IP2 vs IP3] ASK FSK PSK hitpilmwwwreless-world.comTerminalogylP--N-clode-v-Schottky-Barier-Phatodiade-ve-Avalanche-Phatodiade.him!2rarzor PLN diode, Scholky Barrer Photodiode, Avalanche Photodiods| Electrical Anti-Reflection Contact : (Ring) NS 5 Coating sol f Fo + iSi___ (very lightly n doped) Electrical Contact n-Si P-LN Diode Schematic The figure-1 depicts P-I-N diode structure. As shown it has very lightly doped layer referred as intrinsic zone between P and N doped layers. Hence device is known as P-I-N diode instead of P-N diode. layer has very small amount of dopent and it acts as very wide depletion layer. Typically P-I-N diode operates at any wavelength shorter than cutoff wavelength. When light falls, energy of absorbed photon must be sufficient enough to promote electron across the bandgap. Otherwise it will not get absorbed. Material will absorb photons of any energy which is higher than the bandgap energy. P-ILN diodes operate at different wavelengths with different materials used in the construction. The wavelenght bands are 500 to 1000 nm, 1250 to 1400 nm and 1500 to 1600 nm. Schottky Barrier Photodiode hitpilmwwwreless-world.comTerminalogylP--N-clode-v-Schottky-Barier-Phatodiade-ve-Avalanche-Phatodiade.him!2rarzor PLN diode, Scholky Barrer Photodiode, Avalanche Photodiods| Electrical Contact S G ‘ ANE Re terion (Ring) SN S 2 = ‘oating SiOz t if SiOz n-Si Electrical Schottky Ban Contact Sometimes it is impossible to realize P-I-N diodes for given Photodiode wavelength band. Moreover performance of such diodes are not par to be used as optical detectors. In these situations, Schottky barrier photodiode is used. The figure-2 depicts Schottky Barrier Photodiode structure. As shown thin metal layer replaces either P- region or N-region of the diode. Hence it is known as “metal-semiconductor diode". Depending upon semiconductor and metal, a barrier is formed at the interface of these two materials. This barrier results into bending of the bands. Due to application of voltage, the bands can be bended more or less. In this region of band bending, electron hole pairs can easily be separated. Avalanche Photodiode hitpilmwwwreless-world.comTerminalogylP--N-clode-v-Schottky-Barier-Phatodiade-ve-Avalanche-Phatodiade.him! 482rarzor PLN diode, Scholky Barrer Photodiode, Avalanche Photodiods| Electrical S S ¢ Ant Revecton Contact ‘cating ing) > S Guard Ring |, n doped multiplication Electrical . (absorption region Contact 7-Si region) N\ pes Avalanche Photodiode One way to increase sensitivity of the optical receiver is amplification. Avalanche Photodiode is used to amplify the signal in addition to optical detection process. The device operation is based on "Avalanche Effect”. In the avalanche effect, highly accelerated electron will excite another electron with the use of "impact ionization". Electric Field | SURI se regicn _/ $$ ropatin ragion | Avalanche Photodiode Regions As shown in figure-3 and figure-4, Avalanche Photodiode structure consists of n+, p, 7 and p+ regions. Here there are two main regions. In region-1 electron hole pairs are generated and separated. In region-2 carriers are accelared and impact ionized. hitpilmwwwreless-world.comTerminalogylP--N-clode-v-Schottky-Barier-Phatodiade-ve-Avalanche-Phatodiade.him!2nerore P-N cde Scholly Barer Photodiode Avalanche Photodiode + Let us understand opeartion of Avalanche Photodiode. + When photons arrive, it will pass through thin n+p junction, The carriers will get absorbed in 1t-region. This absorption results into generation of electron-hole pairs in this n+p region. + The electric field in 11 region is high enough which separates the carriers, but it is not high enough for charge carriers to achieve the energy required for multiplication to occur. + The electric field in n+p region is sufficiently higher. Due to this charge carriers are strongly accelerated and will pick up energy. As we know that carrier mobility of holes is significantly lower compare to electron mobility in silicon. Moreover impact ionized holes need to travel all way from n+p region to p+ region on right side while electron only need to travel upto n+ region only. Hence here probability of electron multiplication is comparatively much higher than probability of hole multiplication. Hence in Avalanche Photodiode electron mainly contribute for overall current. Let us understand difference between Avalanche Photodiode(APD) and P-I-N diode: + APD is basically a P-I-N diode with very high reverse bias voltage. APD will have about 50volt as reverse bias compare to P-I-N diode reverse biased to 3 Volt or less (in photoconductive mode). + itegion in P-I-LN diode is lightly n-doped. i-region in Avalance photodiode is renamed as T region and it is hitpilmwwwreless-world.comTerminalogylP--N-clode-v-Schottky-Barier-Phatodiade-ve-Avalanche-Phatodiade.him!2rarzor PLN diode, Scholky Barrer Photodiode, Avalanche Photodiods| lightly p-doped. Diode Related Links GUNN Diode® Varactor Diode Tunnel Diode> PIN Diode> Impatt Diode vs Trapatt Diode vs Baritt Diode> Tunnel vs normal P-N& Schottky Diode®> Zener Diode> what is difference between difference between FDM and OFDM Difference between SC-FDMA and OFDM. Difference between SISO and MIMO. Difference between TDD and FDD Difference between 802.11 standards viz.11-a,11-b,11-g and 11-n OFDM vs OFDMA CDMA vs GSM Bluetooth vs zigbee Fixed wimax vs mobile RF and Wireless Terminologies SATELLITE RF Antenna Avionics Wireless LiFi vs SDH CS vs PS MS vs PS Share this page Translate this page Select Language Powored by Google Translate hitpilmwwwreless-world.comTerminalogylP--N-clode-v-Schottky-Barier-Phatodiade-ve-Avalanche-Phatodiade.him!2rarzor PLN diode, Scholky Barrer Photodiode, Avalanche Photodiods| ARTICLES T&M section TERMINOLOGIES Tutorials Jobs & Careers VENDORS loT Online calculators source codes APP.NOTES T & M World Website HOME VENDORS T&M BOOKS ARTICLES SOURCE CALCULATORS DOWNLOADS TUTORIALS TERMINOLOGY NEWS CONTACT APP.NOTES ACADEMIC GENERAL SITEMAP ORF Wireless World 2012, RF & Wireless Vendors and Resources, Free HTMLS Templates hitpilmwwwreless-world.comTerminalogylP--N-clode-v-Schottky-Barier-Phatodiade-ve-Avalanche-Phatodiade.him!