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X60008B-25, X60008C-25, X60008D-25: Precision 2.5V FGA™ Voltage Reference

Datasheet x60008b
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0% found this document useful (0 votes)
113 views10 pages

X60008B-25, X60008C-25, X60008D-25: Precision 2.5V FGA™ Voltage Reference

Datasheet x60008b
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

®

X60008B-25, X60008C-25, X60008D-25

Data Sheet March 15, 2005 FN8140.0

Precision 2.5V FGA™ Voltage Reference DESCRIPTION


The X60008-25 FGA™ voltage references are very
FEATURES high precision analog voltage references fabricated in
• Output Voltage: 2.500V Intersil’s proprietary Floating Gate Analog technology,
• Absolute Initial Accuracy Options: which achieves superior levels of performance when
±0.5mV & ±1.0mV compared to conventional band gap, buried zener, or
XFET™ technologies.
• Ultra Low Power Supply Current: 500nA
• Low Temperature Coefficient options: FGA™ voltage references feature very high initial
3, 5 & 10ppm/°C accuracy, very low temperature coefficient, excellent
long term stability, low noise and excellent line and
• 10 mA Source & Sink Current Capability
load regulation, at the lowest power consumption
• 10 ppm/1000hrs Long Term Stability currently available. These voltage references enable
• Supply Voltage Range: 4.5V to 6.5V advanced applications for precision industrial &
• 5kV ESD (Human Body Model) portable systems operating at significantly higher
accuracy and lower power levels than can be achieved
• Standard Package: SOIC-8
with conventional technologies.
• Temp Range: -40°C to +85°C

APPLICATIONS
• High Resolution A/Ds & D/As • Precision Current Sources • Smart sensors
• Digital Meters • Precision Regulators • Strain Gage Bridges
• Calibration Systems • Precision Oscillators • Threshold Detectors
• V-F Converters • Battery Management Systems • Servo Systems

TYPICAL APPLICATION

VIN = +5.0V
0.1µF 10µF

VIN
VOUT
X60008-25 0.001µF(*)

GND

REF IN

Enable
Serial
Bus SCK
SDAT
16 to 24-bit
A/D Converter

(*)Also see Figure 3 in Applications Information

1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
X60008B-25

PACKAGE DIAGRAM
X60008-XX

SOIC

GND 1 8 DNC

VIN 2 7 DNC

DNC 3 6 VOUT

GND 4 5 DNC

PIN CONFIGURATIONS

Pin Name Description


GND Ground Connection
VIN Power Supply Input Connection
VOUT Voltage Reference Output Connection
DNC Do Not Connect; Internal Connection – Must Be Left Floating

ORDERING INFORMATION

X 60008 C I S8 – 25

Logo

Device Part Number 60008 = Standard

Grade B = ±0.5 mV, 3 ppm/°C


C = ±0.5 mV, 5 ppm/°C
D = ±1.0 mV, 10 ppm/°C

Temperature Range I = -40°C to +85°C

Package S8 = 8 lead SOIC

VOUT Option 25 = 2.500V

2 FN8140.0
March 15, 2005
X60008B-25

ABSOLUTE MAXIMUM RATINGS COMMENT


Storage Temperature Range..................-65°C to +125°C Absolute Maximum Ratings are limits which may result
Max Voltage Applied VIN to Gnd ............... -0.5V to +6.5V in impaired reliability and/or permanent damage to the
Max Voltage Applied VOUT to Gnd(*) ........ -0.5V to +3.5V device. These are stress ratings provided for informa-
Voltage on “DNC” pins......... No connections permitted to tion only and functional operation of the device at
these pins. these or any other conditions beyond those indicated
Lead Temperature, soldering(*) ...........................+ 225°C in the operational sections of this specification are not
(*) note: maximum duration = 10 seconds implied.
For guaranteed specifications and test conditions, see
RECOMMENDED OPERATING CONDITIONS
Electrical Characteristics.
Temperature Min. Max.
The guaranteed specifications apply only for the test
Industrial -40°C +85°C conditions listed. Some performance characteristics
may degrade when the device is not operated under
the listed test conditions.

ELECTRICAL CHARACTERISTICS
(Operating Conditions: VIN = 5.0V, IOUT = 0mA, COUT = 0.001µF, TA = -40 to +85°C unless otherwise specified.)

Symbol Parameter Conditions Min Typ Max Units


VOUT Output Voltage 2.500 V
VOA VOUT Accuracy TA = 25°C mV
X60008B-25 -0.50 +0.50
X60008C-25 -0.50 +0.50
X60008D-25 -1.00 +1.00
IIN Supply Current 500 800 nA
VIN Input Voltage Range 4.5 6.5 V
TC VOUT Output Voltage X60008B-25 3 ppm/°C
Temperature Coefficient(1) X60008C-25 5
X60008D-25 10
∆VOUT/∆VIN Line Regulation +4.5V ≤ VIN ≤ +6.5V 100 µV/V
∆VOUT/∆IOUT Load Regulation 0mA ≤ ISOURCE ≤ 10mA 10 40 µV/mA
-10mA ≤ ISINK ≤≤ 0mA 20 80
∆VOUT/∆t Long Term Stability TA = 25°C 10 ppm/
1000Hrs
∆VOUT/∆TA Thermal Hysteresis(2) ∆T = -40°C to +85°C 50 ppm
ISC Short Circuit Current(3) TA = 25°C 50 80 mA
VN Output Voltage Noise 0.1Hz to 10Hz 30 µVpp
Note: 1. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided
by the temperature range; in this case, -40°C to +85°C = 125°C.
2. Thermal Hysteresis is the change in VOUT created by package stress @ TA = 25°C after temperature cycling. VOUT is read initially at
TA = 25°C; the X60008 is then cycled between Hot (85°C) and Cold (-40°C) before a second VOUT measurement is taken at 25°C. The
deviation between the initial VOUT reading and the second VOUT reading is then expressed in ppm.
3. Guaranteed by device characterization and/or correlation to other device tests.

3 FN8140.0
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X60008B-25

TYPICAL PERFORMANCE CHARACTERISTIC CURVES


(VIN = 5.0V, IOUT = 0mA, TA = 25°C unless otherwise specified)

LINE REGULATION LINE REGULATION


80 2.50008
60 310nA

(normailized to 2.5V at VIN = 5V)


2.50006 520nA
(normailized to VIN = 5.00V)

40 690nA
2.50004
20
DELTA VO (µV)

0 2.50002

VOUT (V)
-20 2.5
-40°C
-40 +25°C
+85°C 2.49998
-60
2.49996
-80

-100 2.49994
4.5 5 5.5 6 6.5 4.5 5 5.5 6 6.5
VIN (V) VIN (V)

0.1Hz to 10Hz VOUT NOISE


LOAD REGULATION
0.7 Band Pass Filter with 1 zero at .1Hz and 2 poles at 10 Hz

0.6

0.5

0.4
DELTA VOUT (mV)

0.3 10µV/div
0.2
+25°C -40°C
0.1

0.0
+85°C
-0.1

-0.2

-0.3
-20 -15 -10 -5 0 5 10 15 20 1 Sec/div
SINKING SOURCING
IOUT (mA)

VOUT vs TEMPERATURE
Normalized to 25°C PSRR vs CAP Load
2.502 0

-10 No Load

1nF Load
-20
2.501
520nA -30
690nA -40
10nF
VOUT (V)

PSRR (dB)

-50 Load
2.5

-60
320nA
-70
2.499 100nF Load
-80

-90

2.498 -100
-40 -15 10 35 60 85 1 10 100 1000 10000 100000 1000000

TEMPERATURE (°C) FREQUENCY (Hz)

4 FN8140.0
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X60008B-25

TYPICAL PERFORMANCE CHARACTERISTIC CURVES


(VIN = 5.0V, IOUT = 0mA, TA = 25°C unless otherwise specified)

10mA LOAD TRANSIENT RESPONSE 50µA LOAD TRANSIENT RESPONSE

CL = .001µF CL = .001µF

∆IIN = -50µA

100mV/DIV
500mV/DIV

∆I IN = -10mA

∆I IN = +10mA ∆I IN = +50µA

1mS/DIV 500µSEC/DIV

LINE TRANSIENT RESPONSE LINE TRANSIENT RESPONSE

CL = 0 CL = .001µF
200mV/DIV

200mV/DIV

∆VIN = -500mV ∆VIN = +500mV ∆VIN = -500mV ∆VIN = +500mV

500µSEC/DIV 500µSEC/DIV

5 FN8140.0
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X60008B-25

TYPICAL PERFORMANCE CHARACTERISTIC CURVES


(VIN = 5.0V, IOUT = 0mA, TA = 25°C unless otherwise specified)

ZOUT vs FREQUENCY IIN vs VIN


300 600

250 580
no Load
1nF Load
-40°C
200 560 +25°C
10nF Load

I IN (nA)
+85°C
ZOUT (Ω)

150 540

100 520

500
50
100nF Load
480
0
4.5 5 5.5 6 6.5
100 10 100 1000 10000 100000
VIN (V)
FREQUENCY (Hz)

IIN vs VIN
TURN-ON TIME
800 6
3 units representative of IIN Range
700 VIN
5
600
4
VIN & VOUT (V)

500
I IN (nA)

400 3
VOUT
300
2
200
1
100

0 0
4.5 5 5.5 6 6.5 -1 1 3 5 7 9 11

VIN (V) TIME (mSec)

6 FN8140.0
March 15, 2005
X60008B-25

APPLICATIONS INFORMATION suffer as the device is biased and requires time to set-
tle to its final value, or, may not actually settle to a final
FGA Technology value as power-on time may be short.
The X60008 series of voltage references use the float-
ing gate technology to create references with very low Figure 1.
drift and supply current. Essentially the charge stored VIN = 4.5V to 6.5V
on a floating gate cell is set precisely in manufacturing. 10µF 0.01µF
The reference voltage output itself is a buffered ver-
VIN
sion of the floating gate voltage. The resulting refer- VOUT
ence device has excellent characteristics which are X60008-25
unique in the industry: very low temperature drift, high GND
initial accuracy, and almost zero supply current. Also, 0.001µF
the reference voltage itself is not limited by voltage REF IN
bandgaps or zener settings, so a wide range of refer- Enable
ence voltages can be programmed (standard voltage Serial
Bus SCK
settings are provided, but customer-specific voltages SDAT
are available). 12 to 24-bit
A/D Converter
The process used for these reference devices is a
floating gate CMOS process, and the amplifier circuitry
uses CMOS transistors for amplifier and output tran-
sistor circuitry. While providing excellent accuracy, Board mounting Considerations
there are limitations in output noise level and load reg- For applications requiring the highest accuracy, board
ulation due to the MOS device characteristics. These mounting location should be reviewed. Placing the
limitations are addressed with circuit techniques dis- device in areas subject to slight twisting can cause
cussed in other sections. degradation of the accuracy of the reference voltage
due to die stresses. It is normally best to place the
Nanopower Operation device near the edge of a board, or the shortest side,
Reference devices achieve their highest accuracy as the axis of bending is most limited at that location.
when powered up continuously, and after initial stabili- Obviously mounting the device on flexprint or
zation has taken place. This drift can be eliminated by extremely thin PC material will likewise cause loss of
leaving the power-on continuously. reference accuracy.
The X60008 is the first high precision voltage reference
Noise Performance and Reduction:
with ultra low power consumption that makes it possible
to leave power-on continuously in battery operated cir- The output noise voltage in a 0.1Hz to 10Hz
cuits. The X60008 consumes extremely low supply cur- bandwidth is typically 30µVp-p. This is shown in the
rent due to the proprietary FGA technology. Supply plot in the Typical Performance Curves. The noise
current at room temperature is typically 500nA which is measurement is made with a bandpass filter made of
1 to 2 orders of magnitude lower than competitive a 1 pole high-pass filter with a corner frequency at
devices. Application circuits using battery power will .1Hz and a 2-pole low-pass filter with a corner
benefit greatly from having an accurate, stable refer- frequency at 12.6Hz to create a filter with a 9.9Hz
ence which essentially presents no load to the battery. bandwidth. Noise in the 10KHz to 1MHz bandwidth is
approximately 400µVp-p with no capacitance on the
In particular, battery powered data converter circuits output, as shown in Fig. 2 below. These noise
that would normally require the entire circuit to be dis- measurements are made with a 2 decade bandpass
abled when not in use can remain powered up filter made of a 1 pole high-pass filter with a corner
between conversions as shown in figure 1. Data acqui- frequency at 1/10 of the center frequency and 1-pole
sition circuits providing 12 to 24 bits of accuracy can low-pass filter with a corner frequency at 10 times the
operate with the reference device continuously biased center frequency. Figure 2 also shows the noise in the
with no power penalty, providing the highest accuracy 10KHz to 1MHz band can be reduced to about 50µVp-
and lowest possible long term drift. p using a .001µF capacitor on the output. Noise in the
1KHz to 100KHz band can be further reduced using a
Other reference devices consuming higher supply cur-
0.1µF capacitor on the output, but noise in the 1Hz to
rents will need to be disabled in between conversions
100Hz band increases due to instability of the very low
to conserve battery capacity. Absolute accuracy will
power amplifier with a 0.1µF capacitance load. For

7 FN8140.0
March 15, 2005
X60008B-25

load capacitances above .001µF the noise reduction Turn-On Time


network shown in fig. 3 is recommended. This network The X60008 devices have ultra-low supply current and
reduces noise sig-nificantly over the full bandwidth. As thus the time to bias up internal circuitry to final values
shown in fig. 2, noise is reduced to less than 40µVp-p will be longer than with higher power references. Nor-
from 1Hz to 1MHz using this network with a .01µF mal turn-on time is typically 7ms. This is shown in the
capacitor and a 2kΩ resistor in series with a 10µF graph, Figure 4. Since devices can vary in supply cur-
capacitor. rent down to 300nA, turn-on time can last up to about
12ms. Care should be taken in system design to
Figure 2. include this delay before measurements or conver-
X60008-25 NOISE REDUCTION sions are started.
400
CL = 0 Figure 4.
350
CL = .001µF
NOISE VOLTAGE (µVp-p)

300 CL = .1µF
X60008 TURN-ON TIME (25°C)
CL = .01µF & 10µF + 2kΩ 6
250
VIN
200 5

150 4

VIN & VOUT (V)


100 690 nA
3
50 VOUT

0 2
1 10 100 1000 10000 100000 520 nA
1 320 nA

Figure 3.
0
VIN = 6.5V -1 1 3 5 7 9

VIN TIME (mSec)


10µF
VO
.1µF X60008-25 Temperature Coefficient
GND 2kΩ The limits stated for temperature coefficient (tempco)
.01µF are governed by the method of measurement. The
10µF overwhelming standard for specifying the temperature
drift of a reference is to measure the reference voltage
at two temperatures, take the total variation, (VHIGH -
VLOW), and divide by the temperature extremes of
measurement (THIGH - TLOW). The result is divided by
the nominal reference voltage (at T = 25°C) and multi-
plied by 106 to yield ppm/°C. This is the “Box” method.

8 FN8140.0
March 15, 2005
X60008B-25

TYPICAL APPLICATION CIRCUITS


Precision 2.5V, 50mA Reference.

VIN = 5.2V to 6.5V

R = 200Ω

2N2905

VIN
X60008-25
VOUT 2.5V/50mA

0.009µF
GND

Kelvin Sensed Load


5.0V
0.1µF

VIN

VOUT + VOUT Sense


X60008-25 –
GND Load

2.5V Full Scale Low-Drift 10-bit Adjustable Voltage Source


4.5V to 6.5V
0.1µF

VIN

VOUT

X60008-25
GND

0.01µF

VCC RH VOUT
X9119
SDA +
2-Wire Bus VOUT
SCL – (buffered)
VSS RL

9 FN8140.0
March 15, 2005
X60008B-25

PACKAGING INFORMATION
8-Lead Plastic, SOIC, Package Code S8

0.150 (3.80) 0.228 (5.80)


0.158 (4.00) 0.244 (6.20)

Pin 1 Index

Pin 1

0.014 (0.35)
0.019 (0.49)

0.188 (4.78)
0.197 (5.00)

(4X) 7°

0.053 (1.35)
0.069 (1.75)

0.004 (0.19)
0.050 (1.27) 0.010 (0.25)

0.010 (0.25) 0.050" Typical


X 45°
0.020 (0.50)

0.050"
0° - 8° Typical
0.0075 (0.19)
0.010 (0.25) 0.250"

0.016 (0.410)
0.037 (0.937)

0.030"
Typical
FOOTPRINT 8 Places

NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

10 FN8140.0
March 15, 2005

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