PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 | P-N. Tunetion A P-N Suenckron con be of Ehe | Followrng Eyres ey Grown Type b) Alloyed Type ©) OvFFused Type Grown Type, Empuritres ore Inteoduced duxng the growing of PWS Cs ga bog gic NS Cd a baie of properties. Biloyed Type:- An alloyed Junction ts made from on N-type slice of Germanium o+ Silrcon by meting a | pellet of trivalent ‘Indium’ ploced On th © galece . he SER aun is. ebsovbed into the germantum to produce ao ‘Pp? region & heace a P-N Tounckron. Diffusion Types Tp the diffusron Process the Semiconductor wofer of| one conductivity CP ox NJ) ove placed th a vessel that conkons [of oxde of the impurity to be added. PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 |The combinatron rs slowly possed over accurately of Known & controtled Lemperatures between Boot BZ tr00°%e depending on the type of Junction destred. P gas of the tmpenty otoms diffuses nto the semicondy ctor Material Q form ao then layex of the Opposvte conductivity resulting «ma P-N Tonctiton. Thvs o> hei. cere coin tt Foie mexely formed by Jorning of two PBN Fype of crys bats, PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 f = Ene<4y Band Djegro ms The energy bond diagroms indrtcote the probobility of Finding) on electron Fox conductron Tt} consists of 2) Conductiop band Cec) 2) Nalence bond Cev) 2) Intrinsic Fermi Level CES) { for undoped Semiconductor] 4) Extsinsic Fexmi Level Cer> [ fox doped semiconductos« ] The enexgy detference between condvction bond and valence Borde (s (colredmecmge es SCO gap . CBee se Fox Nie tols the Ts almost equal to Fox consulatons the ene sy 9cP fs yer v S Fox Semicandyctow the See Sey gop rs moderate. : ene a4 Qop Zero. PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 Enexqy Rond Drogrom of pure Semi conduc tor EG vvex ee a ee Ev Ec ex Ridin bedbeogmeadh of Ps? Ee PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 | Enewgy Bond Diogsam of N-S* 2 nee Littees saa atoms/eom | NA — Acceptox fon Cencentrotron | , Nop —P Donor fon concentrotion PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 tob emi- ic ck Na=to atoms/cm? Calculate GFP Solu ee oe nT 26mv- = - KT Inf nt dre a - ae if - . 10 Se suenie’ | pols — 9:35V ———— Problem: ~ Coleulate QFN *F No= to! atoms! em? solution, KT = 26mMV ot T= aook , i Pen - = th (22) -3 mee > 26x10 In (= ve rarKle = $0-35Vv PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308Work Function Pokentvol of Semiconductor Materials The Noltoge requiced by an electron from the ferm? leve| to free os the Potentrol. equill byYum spoce Vs Work functron Known —> For ao P-type sem conduc toy | Qup= 1 Ore] rit + ¥ | 2 = sooty Day tat PHT Sy Na = TENA= 10!* atom/cm3 - = oasis) § ots v. Qwp a = 5.08NV | =. |> for a N e Sem: conductor Muon <-l@en) + Pt bt + If Np = to'* atoms/cm? 2 fe A ET de pee - Paso = 4-2asVPN Junction Diode -— Do =Vo Oo ov Vo = Barrier potentral oR Tenction potentral OR Contoct poleotrol OR Knee potentral O, is due to the work func bon difference befween potential | ‘p' RB N* silicon. “. DMo= Orn — bre Seta Ne.) = Kr Ge) q ne v N@ = HT In (82/22 ) 4 otf ve er x In ven) — ni =? 1s. - £ (Na,Na, T), ni =constontProblems aed 1) Calculate contoct potentra] Do for NA= 10'S aloms]/¢m? , T* 800k. No = 10'S atoms | cm3 solution ob Tt > 250k. kT = Tl < 30° satmyv q (1600 1600 eewiblp se kT in .Neue Neve ) % - 16 = 26x10 inf 10! ®. to ) 2.1*107° = O-FV at 2) Calculate contoct potentrol bo For NAt= to!® atoms/cm? , T= 200k Nip = to'Z atoms [com> Solutron:- at T= 200K , KT =26mv L bo = KT In ( S282) a Mier ~26¢n107 dof eon’) 2.1Rt0? = O-B18eV—p Doping is done to set Optimal] values. —» \lery Whegh concentrators of NAS No will result "A o Vey lorye wrosk Func tron potentral. This iomplr es hot l\orger wolFa ges will be required to forword bros the drode ox PN Deaction devrc es. —> Very low work potentials us) lead to shost cixcuit 1 Fre electronic dexices.PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 Development of Contoct Potential +> Considexs o seperate P-Type & N- Type semiconductoxw brovght together to Form a sunckron. —- Thes pot oF pricheeticalesc a 4 of Pocmrng a devrce, But Tt allows us to drscovew the requcements of eguillib Thay primovorily due to the development of spoce chorge and the electric field G aot fre P-N Tuackions —+ When electrons Move From N-stde to P-side they leave bebrnd a positive tmmobile chorge. —> Semilowly when holes Moxe from P-side to Nr-Side they leaxe behind a negative irmmob le chorxge- => Due ko thts #Ehe resulting elective Freld ts dreected from positrwe chor~ge to negatrve chorge. PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 Thus ‘€” rs ta the drvectron Opposite to that of diffusion cuxerent for eoch type of cowcrer- Thesefore the Freld creotes a dvrFt component of current Fran N-side to P-side, Opposing the diffuston current. Tt must be Noted tohio tins Flat bond diagrom is equi tlibrsens diagram =oce and holes can lower pot an both electrons Eherer energy by crossing the guackbron- RP motion of electrons and Bales therefore expected before vs equillibriumy rs obtained, th exmol PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308 Enewgy Band Diagram under zero bros. Electrostobe | . Vy Potentra ‘ PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308 | Since we know thot no net Cusvent con flow across the gene kon ot equill'hyium the current due to the dxift of Cu < sles tn thre —6—Ffir-e4d mugs eroctly cancel the diffusron cusrenk — Furtkhes More since there can be No nek buildup of eleckxvons ox holes on either side asa functron of time, Ehe d=iFEaond deffusron cuxrents musk concel for each type of curser TpCdeite) + Tpcarfed> =O TheaafPty + Tn Gath =o —? Thexefore the electric Fretd bullds to the point where the nek cuxvent js zero at equillibx urn PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308 —-? From the electrostatre diegrom ECxd = -_AVGd) potentio dsc | —e ~—ve sign fodrcofes gradrent | in potentral rs inthe dweckron ae Opposite to €. —> In most coses it fs assumed thot the electy cal freld rs zero in Fhe neutral regions ovtside Nar), aad Thus Ehexe *s a constoot potential Nin’ te the neuteal ‘Nn’ matexval, A constant Np’ in the neutral 'p’ motbesral and a poteotral difference Vor Nn-Np between the Dwi —» The regron “W’ rs called os depletron region and the potentiol) diffexsence S\fo’ +s called the contoct potential. PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308. An abyupt Sf p=N sonctron hos 18 Np «to atoms/cm? on one side and Np = 5 xto'S atoms/cem* of the | Obhex |e) Calculate the fermi level position gt Beek rn the 'P’ Sylar! Tegrons 6) Draw an eg utlibsium band dtag~am Fo the gyection and detexmine the contoct potentral Vo from the dragqvom. | Der = KTtn wt: = 26%10 te (us mie 4 1s = -—o4sIY: q Ore < SOL. —-ve sign tadrcates Ferm lteve}) of ‘Pp’ ~egron rs oO 46YEV below intvrnsic fesm: level. PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308,PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 den = KT (n se) @ nt - is = 26xto 7Ilnf S10 ie LHS x10 = +0-331 V aan LOrn = ©O-32) ev tadvcates Fermi leveys +ve sgn 7s 0 3310CV Ghove of ‘N’ region in kerasic fexm: (evel. Deplebron Fa aia N ES a ge -—4----- et Lore [owe ' ir rd memmimmemeren gc, OF , | orasiev| TOFN v th a sae Ev Contact potentral Ve= den — dep = 9-831 — C-0-4-64) PREPARED BY PROF, AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308 Space Choxge and Tunctron Wedth. Q_= (PpoNa Ws Depletron st Wi'd th Xpo ~ Penetration of uaa : | depletion req ion ! | on p-stde 1 ec) — Electirce Freld ag = Penetration of | depleEron region; on Noside Cpe! Es d 6x) dé(e) ~ 1 7No tamer oe ree |G + et WF 8 B54 x10 17 Ib % % B-8S4 x10 "Flom F gm a2) PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 digs, . 5S We BSS Lio — @) dx é | d6(=)> _ —tnNw_ —Mpo < 2 <0 —@ dx fe nate gratin equation overt the 3 ee : Ppesmitked timits . XLno § 4 gle) = L Np ( dx Ge # => & = a Nop mee B=) Thre grating equation @ ovex the permitted imrts ° Fag 2 (an ° —XLpo 0 PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 TWEE I einen, ie, haemtdin eC) canbe yelated to contect potentral Vo by using the formula etx) = — d Vac) dsc — dvCxad = ECx) doc Tate grating on both sides we det Xoo (-dvces = ( E Cx) ds . ee 2. SAD= Xne + Xoo NP Na =>] Sida Sadie eSesG) NAPEND Semilosl putting @in® oF i @ weget Se fe PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 ] we /2€ve (vatno) as NA ND aba bem A P-N gunction bos a cixculor cross sectional oreo WE dvameter~ loutm. Calculate Xno, Ree, @t, A” BE, For this guac tron at equilibwom aot T= 300k. Sketch ECx)>) and eho~ge density £o scale , Na =to'® atoms/cm?, Np=5 x10'® atems/ em? ae A= art = C Sxvort) = 78s “ep = £85 x10 tem* nie sinter a Tv ne 1 = 26 Rom? Inf to’? ~SR10- Gus xno"? ) =o 8v PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 \ = Bese Ee L NA No > fa wiexs-854 K107F 6 xt07'4 “6 12 Xne = WN 2 OUSERIO x10 eae s NetNo Cro'® + sxe) Ss x10'%| apo - NNO = o-4se RIO Narne Crtt +s xo) Qt= tAxaeNnd Y + = penton A FeG nto x O-4ES n10f / 1s x10* % S¥ 10 f = 28-574 xi07S © PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 GQ” = 1A pe NA - — 7? “3 = |-6R10 ae FESRIO X2-2FKIO K 107 Sx 10” we (oF ae => 2:5! ~10 Ec oe - ~L wGwNo - TE _LpeNA = ei = bento x o- 4 So x10 § xo x5 x10 WIR Be eS4nco7l G& = 35:13 Vem PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 - Xpo ee 2.27 RIO “UN po! §* 35.13 Vi em PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308,PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 | ev Bon BDraqgram un ae | | Eoxwoxd Bros VE _ Electrosto bre Boben tral Energy Bond ' —_ Diagram ‘ ; | PREPARED BY PROF. AKHILU MASURKAR ~ MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 — The electrostatic poten tral bowxfer at the jyockron rs lowered bya forword bros VF from the eqeillibrrum contect pokenktial do to the smaller value C oo—VF), +> This lowerrnag oF the potentral bavcrer—oceuss because Forword bros C Pposide,. positive witb “yespect Eo N-sidel, wars es (Ehe electrostatre potentral on the p= side relative to the N-side Tea Postrele Current Posrtrctes Flow Flow Hole Diffusion Hole Diift #4 Elechon Diffusvon| 4 __ a 2 Electron Barft alate ee PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 an saaxrom Under Revespe bras Vv + "m7 Vo Elect Tt can be noted thot the Fretd decreoses with Forword bres, since Ehe applred electric freld opposes the bu-lt—in- freld. —> Werth ~everse bros the freld at the sunction rs meee ased by the applred freld, which ‘S tn the Same drvection os the equilibrium freld. —» The chonge rn electric freid atthe sunctionr calls fora chonge in the transi€ion * egron width ww" —». Thus we, wovld expect EhE width ‘w/ to decreace undew forword bros and mereose unde, yevervse bias. PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 Tyee on Postrete Current Porticle Flow Flow Hote — ——s Diffusion Hot. Naift a i Electxon Diffus von ———} a Electxon P«iFe nla. 7 | Cee Nobel= prffucion custrenk "s moxe Sensitive bo the appired electyre fretd as compored to dxiFE current, PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 ))iRexsicmedh. Nalfame CMiE)<- Iot cs Ehe velfoge applred acxoss a foxrword brosed drode 2) Forwowd CuryventCrF):- Drs the divect cuxvent Flowing through the diode when st vs foxword broged 3) Revesse voltoge GQiane et vs a yererg & the voltoge across brosed drode. Tis specified along wrth Coxcespondsng reverxce Cervent yolues ak which rl hos been measured. CUSeQeetar:- op is 4) Rewerse the divect Current Flowrng through a xvevercse brased drode. PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF, AKHIL U MASURKAR — MOB - 9819063308 5) Revexwe breakdown woltoge ox Peok tavess © wolhoge CPEV)3- Tt fs Ehe maximum reverse Noltoge that a diode con extetsSi anid without breaking down. 6) Power Dissipationi- The powex dvssipated in a diode Foro given Nalue of drode voltoge No) & cuxvent (Ts) is given by Pp = No-rop PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308, 7) Peak Foxword Suyge cuxrent:- Duxrng turn-on , malfunctioning , switching erg. hrgh Nalues oF Current may Flow through Ehe diod@ for bwef intervals of Lime. Suxge | rating defrnes the COrvent the duxakron MaxiMuM NYalue and oF such suxqges in the cusvent level. 8) Rew exse Reovery time C trv) :- bkyxx~ = Revexsse Remyery Eime = Estee ee ts - storage Even ¢ bwanait timd bePREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308 when drode rs switched From Foxrword brosed cCondrtron to the the drode qcuxvenk yvyererses res divectron B stays at this level of (t+) fox bkime (ts), whreh ts the storoge kwon le. yerexse bras condrtron, a Storoge time ts the trme required by EHe chorge covrrers fn Ehe N-regren to move to P-rvegren & wrce-Nexsa. — AFkex thrs Hhe current reduces & eventually veaches the reverse saturakton cuvyvent wolue Cro) afbex o cextarn time Ctx) Known os the transrtron time. —> The reverse reeovery Eime rs the sum of ‘Storage time Cts) B transvbon Erme CEL) . | —> Reverse recovery time rs on tmp ox Eon k poxameter when dvode rs used fox switching applications. Ckx rs in the vonage of sts to ns) PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 4) Foxword +eOvexy Eime.- TE ig the Erme required Fox the forword Cuxrent o+ vNeoltoge to veach a speciFred ~walue oFfkex the drode has been abruptly switched From the veverse bros State to the forword brosed gtote. 10) Drode Resistance Rs = Voy = Stotre Resrstonce =iey PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 Xm?) Rn = AV = Nos=Vo1 2 Dynemie AX ps ees Resgrstonce Differentiating ubeve equation wrt Wem Vo Ses ae al, [< AV | dVp dvb 4 Vou =r d_ [ oo | dVp te. Sip ete ian ST S advo aT PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF, AKHIL U MASURKAR — MOB - 9819063308 From equation ® *t con be Observed thot ofan Dnt Do = se € a putting @ « @ weget Duwog forword biosed Conditron Gee Sispe>> as) ¢. BEEe = rE dVp kr - Cea ees Se vd KT Mig wv va = ie 4 cep . i= 2 ee > ap Dp tp —- més wa —»e few ohms. PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308 | Dusenq reverse brased Conditran See ae, (a=) dVYp KT PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308 E qvation oh. cumscenit Ehvough Dr ode No Zaps Bee O75) Where Ti - Drode cuxvent TT, = Revewse satwotron current No = Drode Nolioge 4 se re Nr= KT = 7 Ty, (\ oo Nir = 26mV at Ts 200K Problem: - Determine Ehe Foywoxd Current fox a silicon drode of a bempera ture of aatc when The yolfoge ocross diode rs O-2V. Compore tHe current When the bemperature F . ORS C) Eiag digubkes afo~< evens love sae, fs, Solukron:- ate. 5~ T Cet) bempexa tye, PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308PREPARED BY PROF. AKHIL U MASURKAR ~ MOB - 9819063308 BTS Ros een eEe 1S we Stasi inundation Tar% = 13.3 4) oO 2 Tn, ye Tire ote Pareete nen ry BOND = a2 5 ie e <3 e) iiti—mtminn€C cd ns 4 =F PAT To - — 133410 De Tec FFIBU rs Taste - O-11728 aac, - Saeeiea c PREPARED BY PROF. AKHIL U MASURKAR — MOB - 9819063308