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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
 FDS4435
October 2001

FDS4435
30V P-Channel PowerTrench MOSFET

General Description Features

This P-Channel MOSFET is a rugged gate version of • –8.8 A, –30 V RDS(ON) = 20 mΩ @ V GS = –10 V
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management RDS(ON) = 35 mΩ @ V GS = –4.5 V
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V). • Low gate charge (17nC typical)

Applications • Fast switching speed

• Power management • High performance trench technology for extremely

• Load switch low RDS(ON)
• Battery protection
• High power and current handling capability

DD 5 4
DD
DD 6 3
DD
7 2
SO-8 G
S G 8 1
SS S
Pin 1 SO-8 SS

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

V DSS Drain-Source Voltage –30 V
V GSS Gate-Source Voltage ±25 V
ID Drain Current – Continuous (Note 1a) –8.8 A
– Pulsed –50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ , TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W
RθJ C Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS4435 FDS4435 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation FDS4435 Rev F1(W)

 FDS4435
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BV DSS Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA –30 V
∆BV DSS Breakdown Voltage Temperature
ID = –250 µA, Referenced to 25°C –21 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current V DS = –24 V, V GS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward V GS = 25 V, V DS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse V GS = –25 V, V DS = 0 V –100 nA

On Characteristics (Note 2)
V GS(th) Gate Threshold Voltage V DS = V GS , ID = –250 µA –1 –1.7 –3 V
∆V GS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C
5 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source V GS = –10 V, ID = –8.8 A 15 20 mΩ
On–Resistance V GS = –4.5 V, ID = –6.7 A 22 35
V GS = –10 V, ID = –8.8A, TJ =125°C 19 32
ID(on) On–State Drain Current V GS = –10 V, V DS = –5 V –50 A
gFS Forward Transconductance V DS = –5 V, ID = –8.8 A 24 S

Dynamic Characteristics
Ciss Input Capacitance V DS = –15 V, V GS = 0 V, 1604 pF
Coss Output Capacitance f = 1.0 MHz 408 pF
Crss Reverse Transfer Capacitance 202 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time V DD = –15 V, ID = –1 A, 13 23 ns

tr Turn–On Rise Time V GS = –10 V, RGEN = 6 Ω 13.5 24 ns
td(off) Turn–Off Delay Time 42 68 ns
tf Turn–Off Fall Time 25 40 ns
Qg Total Gate Charge V DS = –15 V, ID = –8.8 A, 17 24 nC
Qgs Gate–Source Charge V GS = –5 V 5 nC
Qgd Gate–Drain Charge 6 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
Drain–Source Diode Forward
V SD V GS = 0 V, IS = –2.1 A (Note 2) –0.73 –1.2 V
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50°C/W when b) 105°C/W when c) 125°C/W when mounted on a

mounted on a 1in2 mounted on a .04 in2 minimum pad.
pad of 2 oz copper pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS4435 Rev F1(W)

 FDS4435
Typical Characteristics
50 2
VGS = -10V -6.0V
-4.5V

DRAIN-SOURCE ON-RESISTANCE
1.8 V GS=-4.5V
V -4.0V
40
-ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
1.6
30 -4.5V
-3.5V
1.4 -5.0V

20 -6.0V
1.2
-7.0V
-3.0V -8.0V
10 -10V
1

0 0.8
0 1 2 3 0 10 20 30 40 50
-V DS , DRAIN TO SOURCE VOLTAGE (V) -I D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.07
ID = -8.8A
V GS = -10V ID = -4.4A
DRAIN-SOURCE ON-RESISTANCE

RDS(ON), ON-RESISTANCE (OHM)

0.06
1.4
RDS(ON), NORMALIZED

0.05
1.2

0.04

1 TA = 125 oC
0.03

0.8
0.02
T A = 25o C
0.6 0.01
-50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10
T J, JUNCTION TEMPERATURE ( oC) -V GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

40 100
V DS = -5V V GS =0V
o
T A = -55 C
-IS , REVERSE DRAIN CURRENT (A)

25o C 10
-I D, DRAIN CURRENT (A)

30 T A = 125o C
125oC 1

25o C
20 0.1

-55o C
0.01
10

0.001

0
0.0001
1.5 2 2.5 3 3.5 4
0 0.2 0.4 0.6 0.8 1 1.2
-V GS, GATE TO SOURCE VOLTAGE (V)
-V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS4435 Rev F1(W)

 FDS4435
Typical Characteristics
10 2500
V DS = -5V f = 1 MHz
ID = -8.8A
V GS = 0 V
-V GS, GATE-SOURCE VOLTAGE (V)

-10V
8 2000
-15V CISS

CAPACITANCE (pF)
6 1500

4 1000

COSS
2 500

CRSS
0 0
0 6 12 18 24 30 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) -V DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50

RDS(ON) LIMIT SINGLE PULSE

P(pk), PEAK TRANSIENT POWER (W)

100µ s RθJA = 125°C/W
1ms 40 TA = 25°C
10
-ID, DRAIN CURRENT (A)

10ms

100ms 30
1s
1 10s
DC 20
V GS = -10V
0.1 SINGLE PULSE
Rθ JA = 125o C/W 10
T A = 25o C

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-V DS , DRAIN-SOURCE VOLTAGE (V) t 1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
RθJA(t) = r(t) + RθJA
r(t), NORMALIZED EFFECTIVE

o
0.2 RθJA = 125 C/W
0.1 0.1
0.05
P(pk)
0.02
0.01
t1
0.01 t2
TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS4435 Rev F1(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
STAR*POWER is used under license
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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