MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR3KM OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

6.5 ± 0.3
3 ± 0.3
15 ± 0.3
φ 3.2 ± 0.2

3.6 ± 0.3
14 ± 0.5
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25 2.54 ± 0.25

4.5 ± 0.2
✽ Measurement point of
➀➁➂ case temperature

2.6 ± 0.2
➁
● IT (RMS) .................................................................. 3A ➀ T1 TERMINAL
➁ T2 TERMINAL
● VDRM ...................................................... 400V / 600V ➂ ➂ GATE TERMINAL
➀
● IFGT ! , IRGT ! , I RGT # ................... 15mA (10mA) ✽2
● UL Recognized : File No. E80271 TO-220FN

APPLICATION
Control of heater such as electric rice cooker, electric pot

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
8 12
V DRM Repetitive peak off-state voltage✽1 400 600 V
V DSM Non-repetitive peak off-state voltage✽1 500 720 V

Symbol Parameter Conditions Ratings Unit

I T (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=111°C 3 A
I TSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 30 A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state A2s
I 2t I 2t for fusing current
3.7

PGM Peak gate power dissipation 3 W

PG (AV) Average gate power dissipation 0.3 W
VGM Peak gate voltage 6 V
I GM Peak gate current 0.5 A
Tj Junction temperature –40 ~ +125 °C
T stg Storage temperature –40 ~ +125 °C
— Weight 2.0 g
Viso Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case 2000 V
✽1. Gate open.
Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
I DRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA
V TM On-state voltage Tc=25°C, ITM=4.5A, Instantaneous measurement — — 1.5 V
V FGT ! ! — — 1.5 V
V RGT ! Gate trigger voltage ✽2 @ Tj=25°C, V D=6V, RL=6Ω, RG=330Ω — — 1.5 V
V RGT # # — — 1.5 V
I FGT ! ! — — 15 ✽2 mA
I RGT ! Gate trigger current ✽2 @ Tj=25°C, V D=6V, RL=6Ω, RG=330Ω — — 15 ✽2 mA
I RGT # # — — 15 ✽2 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V
Rth (j-c) Thermal resistance Junction to case ✽3 — — 4.0 °C/ W
Rth (j-a) Thermal resistance Junction to ambient — — 50 °C/ W
✽2. High sensitivity (I GT≤ 10mA) is also available. (IGT item ➀)
✽3. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W.

PERFORMANCE CURVES

MAXIMUM ON-STATE RATED SURGE ON-STATE

CHARACTERISTICS CURRENT
102 40
7 TC = 25°C
SURGE ON-STATE CURRENT (A)

5 35
ON-STATE CURRENT (A)

3
2 30
101
7 25
5
3 20
2
15
100
7
5 10
3
2 5

10–1 0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE CHARACTERISTICS GATE TRIGGER CURRENT VS.

(Ι, ΙΙ AND ΙΙΙ) JUNCTION TEMPERATURE

100 (%)
102 103
7 TYPICAL EXAMPLE
5 7
3 5
4

GATE TRIGGER CURRENT (Tj = 25°C)

2
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = t°C)

3 IRGT III
101 PGM = 3W
2
7
5 IGM =
3 VGT PG(AV) = 0.3W 0.5A 102
2 7 IFGT I , IRGT I
100 5
7 4
5 IRGT I 3
3 2
2
IFGM I , IRGM III VGD = 0.2V
10–1 0 101
10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE VS. (JUNCTION TO CASE)
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3 5 7
100 (%)

TRANSIENT THERMAL IMPEDANCE (°C/W)

103 5.0
7 TYPICAL EXAMPLE
4.5
5
4 4.0
GATE TRIGGER VOLTAGE (Tj = 25°C)
GATE TRIGGER VOLTAGE (Tj = t°C)

3
3.5
2
3.0
102 2.5
7 2.0
5
4 1.5
3
1.0
2
0.5
101 0
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS MAXIMUM ON-STATE POWER
(JUNCTION TO AMBIENT) DISSIPATION
TRANSIENT THERMAL IMPEDANCE (°C/W)

102 5.0
ON-STATE POWER DISSIPATION (W)

7 4.5
5
4 4.0 360°
3
3.5 CONDUCTION
2 RESISTIVE,
3.0 INDUCTIVE
101 2.5 LOADS
7 2.0
5
4 1.5
3
1.0
2
0.5
100 2 0
10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

CONDUCTION TIME RMS ON-STATE CURRENT (A)

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE CASE TEMPERATURE ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT VS. RMS ON-STATE CURRENT
130 160
ALL FINS ARE BLACK PAINTED
120

AMBIENT TEMPERATURE (°C)

140 ALUMINUM AND GREASED
CASE TEMPERATURE (°C)

110 CURVES APPLY

REGARDLESS 120 120 120 t2.3
100 OF CONDUCTION 100 100 t2.3
90 ANGLE 100 60 60 t2.3

80 80
70 60
CURVES APPLY
60 360° REGARDLESS OF
CONDUCTION 40
50 RESISTIVE, CONDUCTION ANGLE
RESISTIVE,
40 INDUCTIVE 20
INDUCTIVE LOADS
LOADS NATURAL CONVECTION
30 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 7 8

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

REPETITIVE PEAK OFF-STATE

100 (%)

ALLOWABLE AMBIENT TEMPERATURE CURRENT VS. JUNCTION

VS. RMS ON-STATE CURRENT TEMPERATURE
160 105
NATURAL CONVECTION 7 TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)

5
AMBIENT TEMPERATURE (°C)

140 NO FINS
CURVES APPLY REGARDLESS 3
120 OF CONDUCTION ANGLE 2
RESISTIVE, INDUCTIVE LOADS 104
100 7
5
80 3
2
60
103
7
40 5
3
20 2

0 102
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 –60 –40 –20 0 20 40 60 80 100 120 140

RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS. LACHING CURRENT VS.

JUNCTION TEMPERATURE JUNCTION TEMPERATURE
100 (%)

103 103
7
TYPICAL EXAMPLE 7
5
DISTRIBUTION

,,,,,,,,,,,
5 T2+, G–
LACHING CURRENT (mA)

4 3
TYPICAL
HOLDING CURRENT (Tj = 25°C)

,,,,,,,,,,,
2
HOLDING CURRENT (Tj = t°C)

3 EXAMPLE
2 102
7
5 ,,,,,,,,,,,
,,,,,,,,,,,
102
7
3
2 ,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
5 101

,,,,,,,,,,,
4 7
3 5
2 3 +
,,,,,,,,,,,
+
2 T2–, G – TYPICAL
T2 , G EXAMPLE
101 100
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

BREAKOVER VOLTAGE VS.

BREAKOVER VOLTAGE VS. RATE OF RISE OF
JUNCTION TEMPERATURE OFF-STATE VOLTAGE

100 (%)
160 160
100 (%)

TYPICAL EXAMPLE TYPICAL EXAMPLE Tj = 125°C

140 140

BREAKOVER VOLTAGE (dv/dt = 1V/µs )

BREAKOVER VOLTAGE (dv/dt = xV/µs )
120 120
BREAKOVER VOLTAGE (Tj = 25°C)
BREAKOVER VOLTAGE (Tj = t°C)

I QUADRANT
100 100

80 80
III QUADRANT
60 60

40 40

20 20

0 0
–60 –40 –20 0 20 40 60 80 100 120 140 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104

JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

GATE TRIGGER CURRENT VS. GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

GATE CURRENT PULSE WIDTH
103 6Ω 6Ω
100 (%)

TYPICAL EXAMPLE
7 IRGT III
5
4 IRGT I
3 6V A 6V A
GATE TRIGGER CURRENT (DC)

IFGT I RG RG
GATE TRIGGER CURRENT (tw)

2 V V

102
TEST PROCEDURE TEST PROCEDURE
7
5 6Ω
4
3
2
6V A
101 0 RG
10 2 3 4 5 7 101 2 3 4 5 7 102 V

GATE CURRENT PULSE WIDTH (µs)

TEST PROCEDURE

Feb.1999