Electronic Reserve Document To view this document, enter your NAME, EWU ID NUMBER (eight digits), PIN, and COURSE PASSWORD (all caps). (Obtain course password from your instructor.) CLASS NOTES CHAPTER 5SEMICONDUCTOR _DIodDE. Sl The deode 7s a non Linear device . Tt has a non kneac t-v characTeristic. Tt extio:t a behavior which js dependent on the dereTrou of the appuied velfage. Anode Cathode Rapiol anady sis ¢ Of Ceradts us¢ a dvedes ¢ Cwe fine-tune the o anclysts later) if @ negative velfage fs applied fe the diode , ne current flows and the deede behaes Like an pen Creut. A dicde opecaléd in the reverse dLivection (reverse brased, ) iS said to be CYT OFF. Gl Gd If a positive voltage is applied the ideal deode behave Uke a shorl eerewit and current flows Harough i€. A deode operated in the forward derection ( forward biased) fs sad t be OM. *E] — ET] ao“e's see a couple of saleresting ways we could use a ciraut element with such a behavior; Ud i. i “Ow Fe 6 ve at a Vo t Re 2 RECTIFIER ‘Cp 6p Ur 20 viso DIebE Logic GATES % oy R Ue ee Gt Up R wok OR gate Ad gale.Diede current-voltage chara deri ste Theoretical analysis of a pa Jacction rests ia tre following i-u relationshxp + of evr i G(e - 1) at room CHUTE Vp = KT = thermal voltage 29° (= 30°) the a value of Vp=26mV K= Boltamanns constant = 1, 39% oe Joules | Kelvin T= temperature in Kelvin = 273 + temperalizre in °C q = magnitude of electron charge = 1,6 co. b 0 = empirical sealing constant = exponential ideality factor Ts = saturation cunent 21 has a ‘value between. 0522. It-depends on the material (type of stmicondactor used and the doping ). a> ne will assume yal untess oftesuise Speci fred Is is sometime called Schle factor. That's becouse it rs directly proportional te tne crvss-sectroual over A of the drole. Thus dombling Whe junction area Cesults in a drode with dowble tre value of Ze and a5 the dvode equation indrcotes, double ‘the value. of current 5, The value of Tg i8 of the ander of 10 A however TS a very strong forction of Tenrperature ,The pacametec 7 can be dlicwnined frou toe exponential yature of the vwit-ampere chacaclerishe : . r & eo lag ty = fog Ts + oe oS fla, € ¥0-43q ‘0 Tr A plot of Log Uy versus Uy pesults mm a skacght une of Slope 2434 from whith @ 7% obfaned. Ur INGIS3 5 qee Forward. ~Ve Breakdown Reverse. wre Forward bias region au Y= nev If we operate aT tom temperate and apply forward voltages we can Peascnably- assume thal ; Uf Vr ofr tc. ae C e =i wz Te 7 n Vr order in Sy fe ora ited ok 7 Wo= € > we Galo) Vr = 2.30626 mV % S2mVFor voltages less than Vy the curve can be approximoded by a strarght line of slape @lose to O- Since the slope (Ai/bu) is the conductance thed means that the conductance (S vey gana. in this region =p +the resistance 7s vey hgh Fo voltages above % the curve can be anpron male by a Ssteu'gth tne with a vey large Slope . The Conductance there fore lege => the equivalenT resistence ane rs vey Smal ie o Ub /q Vr ( “i —|—rt~—~@r—...:—C«iCCOCOSCCCsCSCirséCadCédzasKss = ar OG Ue (4 4) * Ws _ = oo th — Yale S ad Ge Ge ew lgt le | & dip WV - a, = torts Co co Vr a DYNAMIC Yy Apnels 7 RESISTANCEsy Usira lly not all the voltage applied at tu dvode. terminals appears al the there is a Contadl resistance between Gud tne sem (conductor "A+ ContaL free Forward dynamic resistance. a- 24 2 Orls Tv Cp >> Te Po juncher small draa due to tne ohmic the metallic terminals PIE RESISTANCE Cathode VeReverse Region _ “The reverse bias region 1s entered when te code volinge US made ah Ve If vas ngdive and few times larger than ye In magniinde the exponen bial Yer, becomes nega bly Sma Compared to dmity and we C44 Nagonably wre Hal: UA>yY, ee Care -Zs This mean thet ; The cement in peverge bWedion is Appto x m ately constant aud egual fo Is —> This Constancy 7S tre reason beluind fee hame satnrahyn current. ” Vp a Pevese dynoure” Be ca x la 3 fe Sistante. rls t te Ty— Breakdown region Pt breakdown région is entered when the maprituda Cf the rewrse vellape exceed a Pyresholl value Gelled the breakdown voltage the Bener Knee voltage . Th the breakdown region tre reverse current mereaces (apid. wa : . eet th @ vey small increase n te assorted The breakdown vwlinge 75 sometime celled tre peak saverse voltage. Celv) ta manu facturer’S Spec fication sheTS AE breakdown Weeisan avalanche of electrons whirl flow across Yn junction with tra result tal the diode overheals. The large cored can destoy. park of the trode Che portion tral atcheals ), Provided that tn. power dissipaled ta fra drode Ts Imited. by extemal cereui try toa safe wel (4sually provided on fie dala Sheels ) breakdowt Won't be destruchve. a Vee = Vz,EWERA THRE ErECTS Te diode characterise has 2 feng, Vp ant 45 Whith are heavily dependent on Tem peratuce . Ve kT LT [ M600 Which coitains agrin 5 i iS 9” Dp 2m eo Ve through Erasfein Ny Lp Nan ~ = diffusion lengty = VO-F wnory carrier S Ufefime Cbefore recombination ) fer silicon Je trerease appre ximadely Sh pec TC Chi = Gea ) © or in otter tems Te” doubles every 5S ONS | 7 . ae ® E(ez)= & 7) Pam t+2 ONS : a (e-T)[# Let). Beery e™ - Tere ® TZ have a value and DL weuit it fo bewme b/s fimes bigger every fame Ladd a bg hiss z jog, V= tn» eget a2 hz dey, 2 fa Lis t Lis = = = Me ©! fa Zz 5DiodDE CONSTRUCTION SeimiconducTor dtodes ace formed by a pn junction The semiconductor mareciol s commonly used are + Gewantum, silicon, and galliuu arsemde » ' Cabs fs particularly used th raicrowave applicad ous, photo-detect’on aud faser djodes ) The unbiased pn junction ee tbiased pn_junchou + majority holes — majority free electrons ti the p-type matrial for simplicity ace nol Shown the~ negahvue charges (7H equal amounT tr tre hous) —— Associated with the dowized aceeptor atous al te manorihy pre electrons generoled by thermal agitahou .SF Stn lacty in the notype mallerial ave nel Shown the positive charges associated with Thr jazel ik atoms and fa ainority holes generated wal agitation. DIFFUSION CURREWT Mesa the concentration f holes 7S hugh ta toe Prtegion and low wi the n-region , holes diffuse across the Junction fron fre p Sida fo fre AW Side Similorly the efectrous differe across te junction Prom fhe on side Yo fe p side u These two Componen lS add togetter to fru a Uffusvon curtenT Inige whose drrection ts fron the p side B te n sideDEPLETION REGONW The holes that drftice across fhe jorcdion fate the nh region — will meet a nigh conceatration of electrons 80 they quickly recom bine abi sappeaving from thr Scene, Thu electrons tot ebéffuse across for junchon inTo the p region will quickly Melombim with Some of numerous holes presenT on the p Side, thus disappear from the scene. As result tire will be: a region dos to fu junction (on tm yy side) fral is depleted of free electrons and contatng uncovered bound positive charge amd a A rtgion Uote Te Hur junction (on te p side) Hrect iS deputed of holes and Containing uncovered bouna regettive charge it follow thot a spauw-charae ion fotms In Proximarty of tH. junchion . THE charges on bor side of fun depltiou region (= Space charge region ) louse an electric pretd fo be established —across tH region. Chena » potewtral differenu result across te rien with n side af pesi tive volta ge. trlahve to te p side)5. The tesulting electric field oppows Yor deffasion ‘ oL holes int? the xn region Oud eectvous ry Th p fon . L The voltage dbrop across thn depktion regrou acls aS a barrier fat has to be crtrcome hous to diffuse mtv tn n repion and electrons fe Gffuse mto Thr p region, Gauss’ lay : dag aes S= 7 (pon +M>~ Na) The depletion region ‘Ss free ef electrons aud holes Mo-NM, >> p-n @ on the p side thao ex a dx Eq. Peale)_ side: Mazo dE. _ 4M dx Es: which -ploliéd . gfves.1 py. 1 -49M i O om te p-side Ex lx) oe S dq = - A 0 an Exp) Ese -Mp Ex (x) Exp) = I (+ mp) i Ese boundacy 0 o the Space ae region M, E(~) a ee (4 xp) Ese: Wn Ex (0)> Emax = ~ 1% @Q om the n-side ey) a ay dé = 1M C dx S eS E(x) Bey = Ges) 4 ie Cn-x) Awe Es. a“ ° EG) = oe Cy * ) 3 Wo a Cs ee p Thus Ex (0) = ee pul n Ese Field at the Junction J N, Xp = “a*p The wid of thn S49 -~9Wa Esp ‘ since usual Ua Practica f a> My depktion gion will not be Yu same a te :Recalling how potential and Clectric field ave related Bo. Efe) ep dre ~ Efeddx dx 4M Xp &e HFrmax|-207 ‘area. triangle Emme X ) iowgl Cacea triang fl Emax OXp ) \$s Junction buitt-cn voltage = L qhe x + 2 dares A Peca Ming that: Xp = (N/a) xp Myxp_ = Waxy > ‘ Xdep = =f oe a Grae ee = (Bes Xy= Xdop Np Mp+ WA Xn= Keo Ma Yr ee 2s: Nat ere Xdep = . g, a OF THE 4 Ma Mo DEPLETION RE, le a Mavs : ’ GION al 2€s, Mat My 8 a Lili 9, BAs Urea dy notad sink a Smally fr doping levels are nol equal tn ten p and a maferials Pr width of th. depitron region will noT be th Same on Th Pwo sides > in ander To uncover tu same amount of hare The dep Won lager will exTend deeper inks thx more Wythly doped pralerial, ACCEPTS , DomoRS 68 | a 7 Si Od junction : N47 No pene ‘t fia current component Lppp due the magnity carrie diffasron free isas well a @mpontnl dae to minority careiee (Is ). Specifically some of fra fhermally genucaled hols in te pn material Kavet Ha rouph to nN material to fur edge of tr. dpi ou region There they experrente tr. electric frelel in fon depletion region , which oo Pt actess = that region tanto fey P Side. Pp v a\,6 \ eal — Similarly Some of the Yharmally generated free ~~ Uectrons rn the p material reach tn edpe. of ta deple hon region and gt swept by the Uectric bell tr tr depron region auyss that fegiow info the W-side,St current These twofcomponenls electtons moved by dei fe fron, pow and holes moved og arift from NOP Add tyr To frm a drift current Ls, whose direction is from the WV side to foe P side Under the open-ceresit condition no cueent exists Ss the tye qpposite currents across The Jarchon must be equal <— |e) iN : eo , a - x S=dp=JIn=0 a _ p= apep Ex ~ Pe SE = o) Jn = Gpint Ex +4 Pp Se =o x Solubon of the differential eq. (1) is: ~O)- u(x) KT74 pod= pe wlx)—v KT749 n(x)= n') ea 1 SEE HANDOUT #F-_fe Oe) ee nlw)= nl-w)e KA @) Re N = —.. te x0 te pm) m4 n (4a) ® Mp h(-~) = 7 Plime) J subsh tehing in) 2 ga Ne RM 6 KTH —p _NoNe a Wa ee. @ ~> Re —> oy _ 8 be Nb Na irq at BUILT 10 \ oe Ds, ae 2 VoMGS Tgpicalty fn silicon aL tour Feurpecature of. is im the ange 0.6208 V > Zemv. tn 10 49 7 O83 NOTE is not Vy II 10”Siz When the psn junction kerminads ave lft open -ecreNed the volinge measured betveen Hum wilt be re / Thal means tat Yur voltape qf, across Yer depletion region — does gt Bp between Tr dvode termsnals This is becouse af te. contret voltages exrsting. at te. metal ~ semiconductor junctions at fu. drode Herminals Heat counler- balance far barrier volfnge, Pp N 7 Q +444, = 0 a es- The B/ASED P-N_Junctiou Tf TL keep ckereasiing tue voltage foo much eventually I'll rach a breakdown sifvabou Ceepiehon region can't gel bi'ager than the leagty of the semiconductor bar J! J )S43 If ZT keep increasing the voltage eventna Il the depletion region — will diSagpear (when o= b) As vy becomes Comparable with go the pr junction behaves Whe a sal of resistors. (tre current is governed bg the chute conTacl and the Stuicon du ctir-bulk resistance) = kv g, MaNy ty Key tate 24 _NaNo = | jz aa NatM, 2s Watt (og 4 Male (4-7) x §Reverse Basen _ PN- Junction eo Due Yo the reverse voltage the depletion region becomes wider, and se dees Re ale Niaha be , across the junctyon _ . Tes means thal + will 96 harder fr majaity Garris to cross the junction , but it gels easier fr tue minority carriers to be swept (driffel ) from one Side lo Hu otter, Z- Z-4 qs >? Ts dominates Lge Lf we Keep decreasing. the voltage Be deplehou region becomes wider and wider tui ala Certain point -thece is @ new’ Phenomenon frat Will Sel in and Supply Thr charge careers i eDLr™—~—~C~C™COCOWCOS> ho Solty Thece are two mechauiom thal coutribules to fae breakdown : % 2ener effect x avelanche effect PTE [Wyle SV usnally the breakdown is due to Zener efpea. Tf Ihel>7V asnally the breakdown is dae be Avalanche effecl, vin Functrons thal breaks down between 5 and 7 MS 0 Ally we have Q combination Y% the tre. ZENER Becnnrown —p occurs when the electric froll i the deplebion layer i's strong enough fo break covalent bonds and generate electron-hole pairs fracancne Beencrown 3 the minoriky cacriers Tal Gress tha junchion under tr influence of Tru electric field gen enough Kinehc energy bb be abe Fo break covadenT bonds 11 atoms wittr whrely Peg Glide .FoewArr Biase PN- junction T>o Dne To the forward voltage the depletion region shrink, and so does the voltage barrier across Thx junction This means that it will be easrec for tue mayenity camiers to oveccome the thece fore cross tax junchon buoT jt its Tougher for ‘the minority carriers to be drifted al fl we fem one side feo “¢ barrier and = = 7S Le Le © tor Iie dominates LoSUS Carrent - voltage Paton ship Bos 8 ee A There ave tuo contributes: one due fhe a caries and the cther vue bo tre ea carriers, The contribile duc te the majority easier is the oiffusion cucrenT the contribute due TB vie minority carrie is Tae dei ft coment at can be shown thal + a Wve v (2 i 4 De o! a ') “p Mo Ln Va _ . De = concentration of holes in the W No region (9 minoy carriecs ) Ne concentration off the electrons in the MA P region (> mrnccity camriers ) Dp diffusion constant fer holes i tue N-type Silcow diffusion kngth of holes in Tha N-type silicon 7 | bee Zp average time it takes fr a hol to into the n-type silicon to recombine with a majority AedtronI= ae Aqne (Peo + 2) (" a: ” ts Diode Cavacimnces Slebe Caracimavces _ Depletion Capacitance The depletion layer stores 4 charge of equal amounT on each side “of the junction. —p it forms a Capac’ tance !1 95. = y= Moy A = Ip = 9a xp A Na Me q. = Ax, 1° TA rile Myriy and recating what we pound some time te Ess _MatVp - Xap = [9 ao (pew) Vay qj relationship fs not near !! s0 thts is 4 non Wnear capacitor !/ Vv a a J Ye.SU Dhvionsly a hineag- a. I copac bance rximation can be done ter device is a and signal swin 9 Aound the bras perat Js Smate / slope = C, v : Ve vu aay dv [us me using the faite poratte!- plate copactte forme. : y= Ce eae ea = Xdep ZEs Wat 7 “nen (F072 A zs (hits 96 Com) (H- 2 A >. “Zz / Nato 2 re 9s (Shen os = _ A I 16 ee ) (ig) %v 4 A Oo $ ——____—— 2. ( Wate 9€s ( fens ) Ge Therefre we can write ye Ie B Ge Tre analysis 7 based on The assumption thal the carrier concentration change absuptly at the Junction boundary » Mere in generat Cyo ; (- a) whece mj is called GRADING COEFFICIENT and ts Vvakne ranpes fom Lite & depending on Phe manner wm white for oneentratou chan ges from fm pt W side Of the jum etionn. CySIF Diffusion Capac tance in the vicinity of the junction on the W side we have gecater hele Cconeentialion than norma lig. exists (> because 1a diffusion). This excess hole density. can be ConSideced as hage Storage in the nerghbothoed of tre junction’ Similac StTémenT apply te electrons whnich dhiffese inte tne p region C0) 1 pC) a po = ae __\ 4 Wa pt % Xn The excess hole charge stored in fhe » region is given by: 2 2 : Wr [Age 2 ee f On) = Fro © op 2p 2e eee) = Lp. % wt /, BeGeee eee = VPG De 4 2 Lp = Dp % =In a Similad Wag : Q= Th % Tae tofaf excess Minorty ~carn er chage ws: B= Qt+@Q, = p%+he, Sina thn diede currest Le TprIn we ev express the excess charge as: Q- e,-T where %, 1s called drode mean transit time - Fra fi cally Since nen Narre —> rt, then Lx dp ea Qe >> Qn —e 2X SS and tins 2% % This solve th. prebun of froding ok % / Fr small changes around a bras point: a ae dv lvzve Z Cp = de, =) : «(#2) | = av dv! ly. ve + Bite a and we found some time age taal + g = Dinet i Strode Vefol DOES THE CURRENT-VoLMGE REL. Come OT 2 SIF av There Is electric freld only in The space-charge (egion ( between —xp and Xn) Therefore ‘the region fru Ato -xp aud frou Xm to K are guas! neutral {1 The — boundary of the quasi-neutred p-region is al ~xp and the tole cee sity. there must be equak ak equclébrv ie ae equilibrium as well as The same is true for fue election dusty at the boundary of the quasi-neutral y-region at xn can be shown Csee Muller Kamins p. 234.) a w/Vp a "p (-%p) = Moe u/ Ve fy Cm) = beeThe current that flows through any fransverse a: Sectton x must be constant and has the contri bude af bot poles aud electrous : Tn = Trescite + Tn, ote Tp = Thacite + Tr scte If we Considec the quasi neutral reprous than Since there 75 no freld in trove regions thee will be no adpift: Lh Tn, defe — (17 Ye rental region Wh ) Tp 2 Tp dite (im the nentval repion Wp) Dn this basis, the most sutable Hansvese. Setrens fr Yon evaluation af Tre Yotal purrect Loose are foose al fue boundary of the depleh on lager > xXe-xp OF xe xy Ty TF, (-xe) + Tp Cr) Since fhe flax of tha carrrecs is constant py thn deplityon ayer (> Sh ply assumptrou I} ) T Cxe) = Lp Gn) d Snore = Lh xp) + Tp (x) currents of the minostty carn rsL SAF Drove = Tnouge Op) + paige (%n) The diffusion the end = Tor le oe Ta igs (2 Ded of Te OD Tnaigel) 7A a (fer electrons ) — OQ Tate C)=-GAad 6 od (for holes.) x ZL TF assume Graear distr bubous uf of dap _ "pl-*e)- P(A) _ Mpoe = Me SHokT ry Diode ul dh _ -flm)+ BK) foe + fro ax Wn - Wp a v anp 1% C Ve ae a> Wp . = aD) x Mpo= M/Ala AP 8 ee c a ‘) dxf Mo Wn Bo = NE/No Subetiteting in Q and ©@Q Inoue (Xe) = GADn (e" 1) We Wp @ ha Te arte (Xm) = alii AD of a an 14 Pe ( ) Zs Ln the case Gf @ Lowe Bede: 2 o/Vr Toune = 9/0 (Te OE Na ln an ” Fs W tte painocity, carriers will pecombine befpre (e2chuing the drode Yerurineds Ji)The diode _as 4 cin S-20 element If one is doing a land paper design oa rate dom plex ae uss es : °F 1 PApid crest ematysis iS a neceSSify — Z We want ty gusek ly evaluate Various possibrt'hes be fou Cote ting” to @ suitable ecreut tepolog More acceraTe analysis can be postponed entil We almost final design is cbiained —> pessi6ly wity The ad f a compuler cercudt-anelysis prograur (eg. SPICE), then a accutale cand be used to further refoe (fine-tune ) fax design. Z The issue (8 of finding an appropriate Compre muse. between accuracy and complex ty Different simplified models of the drede are commonly Used. _ jdeat diode. “ae a” constant - voltage - drop 7 idea diode modex Y* 2 piece-wise linear modet slope “WG eR - Yon ny diove Sore | ~ wis ecating point” R ae a load line (slope =) cg { a diade short diode open Veg = Forme + Yorve pb “nine = Van Uoore is WY —_{——~ Yn's is Pre equation of a line: y= a~ bx$-2 The mtecsection ofthe lead tne with volt-ampere Cavachteristie of the Lode gives the operarting vetues af voltage and current in the areal. Rg This is @ genta Veg (4 Device & Gnept woes not apply just for diodes. changing Vee Ves, Yes2 Vane Vase. charging B YopSmall signal modet So far we have, been mainly focused on the ON-OFF behavisr of the diode th these applications is reladve “ sing. usually th. applied Signal models seen 50 far (ely lange So the ace mote’ than adequate C ¥ There are ether appleatron where Yha drode - biased to operate at a certain poist (Ube, Toe) on the t-r charadiristic and a Smal ac srgnad is Superimposed on fle de quanti tres «© ® eTWhen the signal p(t) i absent the dicde voltage © IS equal fy ; w= % « |e and the diode will conducl a de cerrenT eo [Vr a p= dpe Le = De when the signal lt) is applied the total iStantaneous bode veltage will be given S¢ Bh)= Kr GE) corre sponcleng ty tne Bted (SlanTantous Coxtend Ot) wil be: ' v3 /4Ve ott)“ Tse = (%/9¥r) Gi /y ve me ds @ e = aly Ver = Hee. € fx) = flo)+ £6) (x-%o) + $0) nm)”, —- z 2! TAYLOR. EXPANSION ax aXo aXo c= e@ + ae (xx) + = Xe =o W . & x +There fre if Gwe (as le of faum take We amplitudes Smaller than 10 mv) \ ' > 44 t) © Z = i» (t) Loa (it =) — —> ant) = Tne + I ae Vand (ae t t Tp Aq (6) diode sma signal resi Sante oe Tha Increment resistance Foawaen Bias piov€ /)) TY we book. af whal we have done from a graphi'cet perspective. ;S23 % yy VYoa oe J curve ek (Khe, Toa) For small signals we can fea sone bly approximale the déode ¢-5 carve with dts ten gent: av, as ideal diode JP hich 78 the plece- wise \% Uy linear model ‘ oo: = 4 thed ne ea - Aready. introduced. The cireut we have analyte is saT of problematic when we want. jo set Be 1) Praticaly fudt's whal we ob:zg : + a VW be pa Va r* ¢ tae Von + Ug = +g Vent ve = ot Wty O ony ae Ly) tboZM Fh: ideal diode _ Yoo = Yon = BR+ yr alo Vey Vp sical the smalt @ y ae 4 oe, Yeu diode / only ac A with sts Preremented resistance! Ke i (Rea) OW} : ) . Zt ooeVe = K CTat 4) * y+ @ Corie? + t bp > So fui approach where we separated de world aud ac wold ( for small signals ) makes sense Ji)S- Uy So fer we b bb E. chale storage aff ely veplected the dade & This is reasonable only uhen the small synels alia hwea PPequency thal 7s relatrvelg- Jl TE the Frequency goes up we have te account fe Gad Far low frequen ces : Gand & are een clcceutS bal for high frequencies Gand C% becomes ShorT acute ff J Tt takes time te switch the drode on-OFF and viceversa J)Elementuwy Gheode appheadi ons @ (Rectifrers | Half wave _cechfration a . L sue e pe ]e Full - wave Rectifcatrou +0 PIV of the diodes is about 2% !1 peak inverse voltages$.2@s5 * WS PIV of the. Arodes is abut Y¥ )) Rak Rech fier - CReetifrer with capaci hve fitec ) “ peak deTeclr (can be used ty reconsiud the envelope of an AM signet) vo Us Ss \i & é we hwe tp choose “p> Ro >> -t/ee ducing the dyschacge > ig=x We & Us Pp Tf an Art signad fe Pts cere it will detect its envelope5. Limfecs |= Clipping cer cui tS Us ve * bt PR ite “ us Ve Js SusCLAMPING CIRCUITS Clam ping fs a shifting gyration of a wavefrun, where tne amount Of shift depends upon The actual waveform. Ue “Fr + ge cde ret dé 7 3 SOF Ue= - pe Restoration || ft the beginning the dicde is a short and “the capacitance will charge. to a veltnge Ue equal yo the magn tide 2 the mest nepative peak (ve=-6V) = -Subsequen tl the diode open and ‘the Capacitor “retains its voltage incle finite ly. Gi - Ve = &-(C4)= +10 More pratically Thee will be a load (esisfance Connected actoss the diede in a damping art Cc | y s@ * TF ye6-1 [Wemnee Dance] This is anctaer Though cercwit te analyre Clamper peak detecTor at the beginning the diode is a short and fhe capacitance will charge to a voltage VE equad to Ip. See Vp sin wt @ =Subsequenty after z when Pre sine nave has reached [> peak vate ank Ch i now charmed at Yi=% the diode open aud the copaccter fetains its voltage jadefrni rely. — Y sinwt Us -Ytsinwt ; ‘p once we Know how Up, looks ike it's very easy to gh the final output voltage Predecced Canis peak delectre (> note frat hece L nant to obtecT a nepatrive peak so the direction of the odode D2 must be properly sak WW) -Vp + - ~ vor ~2Yp + Ug <- WLMb=E DovBlEZENER _Diopes 524 A ener dicde fs a device where the doping is pecformed us Such a as te make the é-vcharadkeristic iin brakdown region vecy steep. Eothe reverse volge exceeds he breakdown voltage the drode norma lly will aol be destroyed . Che mannfachrer specifies the maximus power thal devite can srfely dissipale —D> sometimes They GVe directly tue max Curent Wal fre delice can safely folerate ) fre almost constant voltage oroe tal the dbiade exhibr th the breakdown reg'on Suggest thal 4. naturad application could be 4n the design of voltage regulators. 0 Nominad zener vellage 2zeNER SYMBOL Va BY Toone =-- -1BV |-Taresr The-manufacter usually specefres the. “rominal" Voltage across the eener V2 at a speafied a. =.Thongh the i-v curve is vey steep in thn breakdown region it rs net verheal —p it has a cxfeig slope 1 ies : A tis offen assur gak ee pahealiy. of as. ed ay & BY Enee voltage The Maximum reverse current Dania, tel tre renee can withstand is dependent pen tan design Qud construction a The leakage current’ (Lamin) at tee knee off for Caaduiste curve 7s sometime assumed 10% of far Tima C > Temin 1S wha’ we alse cotted rev ) tn lock of more accurate cata |}!Example $30 oy 7 _ 1 Reoap Te of DHS Given a supply voltage Vnominaly loV bul Yat can ary by pe ae We want to design a voltage repulelor able b provida. @ consTavT voltage SL EE V ew a fad ce The load can vary from OSks te 2KS. We have a Zener specified to have Ver6.& ot TestomA, i abad 5 sr and “the max Curent Flol try 2ener tan with—stand ( 2ever. w7sy ) /n ocder ty propecly design tis cerennt the res?STance Ri mast be such tual th. diode stays i Tow @nslant voltage region over the entre range LL inpa®l velinges and. load impedance t vs tnereasing i bs fs about 60 mA Vss decreasingT-=Tz2+T = fo. te Le Vis-Ve2 = RT iz In orche te assure Thal The Wiode remains in the Constanl voltage gion , There are tro extreme ne’ tons te considec ; o The Aighest carvenT Yhrough The Ufode OCtuts when the scerte voltage is maximum ant Re fs maximum (3 Tae worst thinp tral can happen (3s thal tin lead geT unconnectedl becouse then QU current supplied Lees throes the drode > ee LSmax ~ Ve Ct O zx Vismax — Ver Vo = R 7 a Ri 200 a3 ¢ The lowest curren] through Pra rode 0lturs whty a the sourt voltage is minimum ant Re rs Mininaw (> mesT of current sepplied LT rs drawn by Re) Vismin- Ve _ Ty ey sini _ Remin Let's ty new to solecl R based on fre nominal “values (-> intermediate case) eT assuming foal thee is no joad (> all curren? provided by the power Supply will flow Tatough ‘the rner —p we ave Ci fee —> jusT te be be on Tre Safe Side ) ise i _ “es ~ Venom —p BR. sz Venom vem R rom Tom = 2amA Ve Boy °° Rx fos Ys = lov Lef!s row wecify if tois choice of & wil satisfy the 2 extreme sittahons'! QF < Bsmmax- Ve 24 mb @max = eo 2 a = Tre tener can Stand up be 62 mf so that's fine |@ a Vin ~ Ve _ &% Rk Remin - 9-68 ~ 68 wn yemA léo See — HERE we he a problem 1 The currenl at tne knee 7s abou 6mp (> 10% of Se mA) so = we are net fy the Constant wollage \ ne reed te lower RI! /o order to remaja ta the consfauil velinge region we need Yo choose Ri jn sna wag teal; Fe mth + ne a snin~ Ve ve fe zw es Vssimin — Ve Sian = eee _— 3 6k } Te Glen. oxo + ae T need more carenT, = mete carrent Will Plow tHuouph the tener S we 2S tat! s than take Raloow%— and oress-chek wlhal haypen: v - 9-68 — 6B DO Temin = Z-- So TS 84mA , : —p ok y @ Fc. 700 = G2mA_ S dr onlec te evaluate how gel ltie voltage 532 regulotor = we deslgned can we pmeqsure the fofal voltage Sur Avided the nominal witage ( provided b the (oad) PERCENT 17 46 REGYLATIONW ~~ x loo Venom The goal was & previde a nominal voltage Of b.8V te the load WM io n- 4Ty 6T, = Te,.,- Te ti Lema, = 4G2mA ; Alp ve 53.6 mA F2amin = B4mA AVy = 4Ta- GE 33.6mA. Se ~ 168 mV 16g mv = 2 Y, REGULATION = Vo eo ee sloo =~ 2.64 MoT Too BAD J) nomDIODE SPICE ModEL - Cyo = = ( Nar Vae (SE) %5.33 Table 33 SPICE DIODE MODEL PARAMETERS (SOME oF THEM) Model Parameter Symbol SPICE Name Units _ Default Vaiue ‘Saturation current Is Is A 1x 10-4 Emission coefficient 2 N = 1 Obmic resistance Rs RS a Built-in voltage vs v 1 Zero-bias junction capacitance Go cio F 0 Grading coefficient m M - os ‘Transit time or Tr 3 0 Breakdown voltage (KNEE) Veg BY. v © Reverse current at Ye CKNEE) — lap IBV A 1X 107! Figure 1-15 “Reverse characteristic of the real diode: From: PANTOGNETTI, &. MASSOBRIO Semiconductor'device modeling with SPICE McGraw-Hill, New York, 198% 8How To BUILD A_SPICE MODEL FOR A ZENER i = ‘ Here Dy is an ideal diode that can be implemented in SPICE by using a very small value for n (say n = 0.01), and Dp is a regular diode model for the forward direction of the zener (for most applications the parameters of Dz are of little consequence). : X Since we do not usually use a Zener in the forward direction we poT vecg Wi. Tenty in how De {y little allention i a Ft”~—tr:—.L.C.-:«Ci DiovE DESIGN EXAMPLES at e bc Rwe s " o 2 7 Ss ae line 3 E g aa FULTE Rees loAD — 120 V(ms) a 60 te } \ \ \ Agee m,, =, — vs —> tee (Wz ) volt rms h The transformer hesides providing the desired Voltage transformation so that we hewe the 7 desideed sine wave amplitude , provides electrre isolation, (> TE T have a shert at the primary the primary winding will burn , bil ne damages Te the eee ecient aathed af thx secondary will occert) We want To design a power supply thal provide. a de voltage of Nominaltg SY and thal (s abe to supply up te es mA to the Load. The load can range from Re= 2007500 We hwe available a rener of Von, = SV A Tenom = 20mA and t= 0. Tre maximum curren thal tu wer cau stand 'S Tamax = SomA C—> the current through Hee Bnec Should be al least Smi fh be sure that we ace in the constaul volinge breakdown Mpren > Temin = (0% Tine = SmA) ——_lel!s stall cur design “the goal 7s to achieve the specified requirtmnenl’s on the loal —p so Lt’s focus en tu bad and proceed with The design "backward" block by block. from the bad the ac bine ‘ VY. = SV ade. Lemax = 25 mA A Vipgs. , #4, F Ris tm? ae First trivial obsecvation js thal jf LT want a constant wlinge of SV on The foat Lo ned a 2ener which has a nominal ener wllage “closé th sv —p> we go tucaugh tA sheeTs and. e howe been bucky, —> Wwe found a wner which _ Venom = SV Beran © 2h le3 = lose (Tama = Some, Tamin= 577 ) an J oy Tf DT want fe make wre foal te Zener is alu ags operating (a Ya. constant vy breakdown voltage Be the View must alw. Ti ays be relalively buger than the Venom —— at least a Oe fimes, 5.38 Vetetgy — PE min ie Besides Vee 1 “fluctea ting 4s Cif it were no T would have nol spend my time tying to regqulete rt 1)! ) How mach is fle clina bing "TF eb nal Know, bul it's up to me realy }|! Ft depends on how gool Lam jin filtecing after the tect freation. ; At the momen? T can't say for sue , buT Tam reasonably confident thal it Shouldn't be thal big deat to manTain the flecluations within a couple of yelts —p wWe!/l cress. heck + later Tf weltabie te sods fy tts assumption ))! J Vircemin = 1oV yi pace Remax — View =2Y # RifCCE = AV.Mecemin = we always wart Be be abt. to supply, ! up toe “2s mA to the bad I Poco ce ee W63 Veece max = Be Diva t Ve Tmae = Mesrmme= Ve 2 ES! eye mA xR 163 From Boe poial of view the worsT Yo'ng. fal Can bappen is that fue load get unconnecteL aes then aul G2 mA ge Yarouph thn Pener —p The renter can stand up fe somh 5° we are safe Oy Zn normed condi hous only G2-7S = 1? mA gees through the rener }z Ye 12 -S.i 5-36 p= . Gs) 292 mW me RK 62 Gt's now choose C so thal we can be sure thal the ripple stays below 2V (AVezrv) 4V=2V = "Ye. zs t-% Cc. —s €= ay ; av ere a at nT imistre Cm TS gap te escases 7 thel tne discharge aT fast T/2z if T take C big the discharge is Slow Cwiicli is Whet T want !))oversi zing the capactunea C LD an sure frat the ripple 78 going le be definitely belle /1 } a Q Cx Ifo. 4yexio > od 200 nF 2-2 Tv which is rather bp ae we need an electrolW teed |} oe Te usually big copadtances are anyting bul capacitanus pe X= jut -j— 3) ic Z when ‘the frequency increases it behaves Like an inductance 7. peateod solution toh DE oon? a at low Snap Pepeen ae ie ke Inte ide te, amie ee situation under contol. at bo He so there 1s no 12H . Regarchiag the fansfrme we need 12V peak af fos Setondaty so a rao of lo-VE w jy is okll fz = brgveng we are wor hingSAF « Barreey cHaeeer- z. : + SE Garrery | Va We wanT Yo design & ballery charger fre balley of fz Ve tal supplies seomide Ug = Vp cos wetL 6 az 2a = Vp- Ve . Doems = Z ~) S ese tp = eo ! Ve-Vy \~ - +/( i) ESCH esep dy) We want : = Dorus = 10 mA SP pene he's fix Ve: Z U o Oe el OO ee wo & %e : 7/3 n/3 21/6 ¢ dp +S cosapdip = z+ Sp esxdx = oO oO i “ wly . ei eee 2 s 4 a & i wha i we | vl 1 So a. MV wei ~ eR) (Fe) O2?y- ih i i aed Sea _ 24-12 _ 58 PIV ow The diode, 5S v ~ 21g mA IZ +24 = 36 SPECIAL TYPES OF DOES ° Schottky barrier diodes o—pf— The junction formed bg a mead and a coped : Semiconductor cau be ether recl fing % ohune . Che couse Ltn Wtertu in canrier contentrallous mn the fee materials, a poten tied barrier Cxists —p 4 olmic contacts care is taken Yo thininale the effecT of tre bacrier) L Schotiky diodes are formed bringing togetter x mélad (typically alumintum or plaBnun) aat An n-type semicondactsr melerial (siliton ) , fn schottty dvodes the current i condeacted bg majoity carriers (—@ tis means frat there (S no charge - Stoo pe effec due to the marnoci ty. Gattis —p a schottky drode can be Switdud on - off faster ) a: The reason why The catrenT is @udecled by majaity caries is that tn the metok there are wailable numerous elechrousThe forward vollape dee of sthoithky boles is gmaller O320S5V , ancl The reverse Saturation current is higher Sehotlty diode’ u ° VARAC TOR A vawdn a bode We Speci fieally manufactured. to be used as voltage Vatiable capacttns A biased pr junction exhibis a certain capac tance thaT IS function of the applied ve [tage Che oe Up m (: a) Sane Cyt Stoeyie. Vr usnally they axe ued with A reverse bras /!! —D pp current flowing through Yu device and Zcan geta pigge SC enlargey. The depletion region (2 rethee thas trying to shes nls it appiying a forward bias)5-39 ¢ Photo diodes a. pa Junction (8 Muwiinaled the photons impachag he junction Cause covateaT bonds fo break , and has electron-hole pairs ae generale (—p which induce arent ) Photockodes are usually Pabricaled using GRAS. A photodiode converts bight te electrical energy (—® tsing the phobrdiode. fermarlh bias we have 4 solar—cett —P photediedes for astral frbcicoted fem rather Solar ces are cheap silicon ) ar SN ———>+ 2 quantum efficiency — > Ip Me cae charge — a p= photon flux density I (photons [sec eni* ) Vous A= funetion area Cent >) = DA = light intensity. Ha ae aes increasengjilurni na bon Common application —p optical rececverso Light emi thag diodes (LED=) “7 +—p}— Te LED perfrms tra invecse of ten funchion of tin photodiodes Colectrie eneegy ) It conarts a forward curren Viale faght. Tre bight emilfed by a “ED i prportenet to The num ber of recombinations tral fake pace and there fre i prreporbroncd to tax current in the dod, v When an electron fal from tin conduction band inle hole give up energy in the frm of light 1) GAs emits Light waves ala wavelengtt, near toe Mprared band . 7% produc tight “m Tre visible (ange | GP Capilium ~ phosphide) musT be mixel With Th batts. —~» Sen poe on TEXTBOOK Vp ts eguivalen? Bs the color of fre tight : “eD are used in forwad-bias ! > LASER = LED designed So as Ye Produce coherent oe