DATA SHEET SILICON TRANSISTOR 2SC2223 ~ HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD eee DeccrPnion PACKAGE DIMENSIONS The 2502229 is designe for ute in small type eduprents especialy econ mended for Hybrid Integrated Circuit and other applications 2es02 i seam as losssgi, | FEATURES # Micro package. e@ 4 ‘© High gain bandwidth product. fy = 600 MHz TYP. tte : © Low output capacitance. Cop= 1.0 pF TYP. $| al Hs ABSOLUTE MAXIMUM RATINGS (T, = 25 °C) alls = Maximum Voltages and Current tet | Collector to Base Voltage ego. 30 v alan | Marking Collector to Emitter Voltage Veco. 20 v Emitter to Base Voltage eso 40 vi Collector Current lc mA e |; Maximum Foner Dispaton qT. Total Power Disiat Pr 180 mw als a Maximum Temperatures SI 3 | Storage Temperature Tag 85 to+125 °C. ho 3 Junction Temperature i 12 °c @ crzcraicar caractenistics (ta=25°C) CHARACTERISTIC symeou | min. | WA |_MAX.|_uNir TEST CONDITIONS Gost Cutoff Curent a0 100 | na | Voa=25V.1e =0 Emitter Cato Curent jason 100 | na] Vee =30V, 1¢=0 ¢ Curent Gi nee | @ | 90 | 180 Vee 60¥, 1o= 10m ae to Erie Voie Vee or V1 Wee =60V-1g=10mA Clictor Saturation Vat Vestas @1| 03 | V_}I¢= mA ig=10mA Gain Bancvith Product fr 400] 600 Wihiy~Veg= 60V, ig 107A ‘Output Capacitance Cop [ 10 DF | Vcp=60V, le=0, f= 1.0 MHe Colestor o Bam Time Constant | Cony @ br | Vor “60, le=-10mA 1-319 Mie oe ea se 22 | TSScotme Se Tex Cras Ctestieation of hee @ = Fi Fa Fi hee Range | 40080 | 60%0 120 | 9010 160 Becamant Na TO-12776 (0.0. 76-54918) meen ioe Seeas 282223 _ 25°C unless otherwise noted) TYPICAL CHARACTERISTICS (Ty SASETO emFTER VOLTAGE JT a Fw : 2 140) i 2 5 5 ol 8 é iT i 24 3 : > | cS t » Nt | See eae e ; Ta—Ambient Temperature—"C es Ve-Boe to Emit Yoltees-¥ eguegeron cunnewr ve SES AND SOmEETOR saTURarion SBLLEETSR SOMATA vourace StS AGE. SSE SECTOR EURAES ram) z Tok i wor 5 ral i i ons i 3 204 es 2 la o 2 «4 6 8 1 2 «16 18 20 coe ea © e Voe-Collctor to Emitter Voltege—V Current-ma 9G CURRENT GAIN ve. 26 CURRENT GAIN COLLECTOR \ce=50 nee-DE Current Gain CC p-Callector Current=ma lee eso Yoe Collector to Emitter VeNEC t1-Gain Bandwidth Product—MHe or to Base Time Const Conb'y-Col 5 8 s g B EMITTER CURRENT “ =10 Ie—Emitter Current 27 30100 COLLECTOR To Base TIME CONSTANT Se emitter CUAMENT Ye=60¥ 1519 MMe “05-12 le Emitter Curtent—mA = 30 2S8C2223 INPUT CAPACITANCE vs. ewiTTER TO BASE VOLTAGE. OUTPUT CAPAEITARCE we ColLecton 10 BASE VOLTAGE ip Input Capaeitance-pF Cop-Output Ca oraz 0s 12s 1 Vog- Collector to Base Votsge-V ep Emitter to Base Voltage —V POWER GAIN, NOISE FIGURE weer CURRENT a TT pesceon aT [it ee if Gye-Power Gain a8 NF-Noise Figure —d8 = Or ee al le—Emtter Curent mA 100 MHe Gpg, NF TEST CIRCUIT nour 50. 0.01 uF Mee oF ourpur 302 Reo 01 gF Li WeeNEC 28C2223 | (MEMo] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation, NEC Corporation assumes no responsibility for any errors which may appear in this document, NEC Corporation does not assume any lability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of @ devioe described herein or any other liability arising from use of such device, No license, either express, implied or otherwise, is granted under any patents, copyrights Cr other intellectual property rights of NEC Corporation or of others