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7D0N65F2 Kec PDF
7D0N65F2 Kec PDF
General Description
KHB7D0N65P1
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for active power factor B
A _ 0.2
9.9 +
B 15.95 MAX
correction and switching mode power supplies. Q C 1.3+0.1/-0.05
I D _ 0.1
0.8 +
E _ 0.2
3.6 +
K P F 2.8 +_ 0.1
FEATURES M G 3.7
L
H 0.5+0.1/-0.05
VDSS=650V, ID=7A J I 1.5
D J 13.08 +_ 0.3
Drain-Source ON Resistance : N N H K 1.46
L _ 0.1
1.4 +
RDS(ON)=1.4 @VGS=10V M _ 0.1
1.27 +
_ 0.2
Qg(typ.)= 32nC N 2.54 +
_
O 4.5 + 0.2
1 2 3 P 2.4 +_ 0.2
1. GATE
2. DRAIN Q _ 0.2
9.2 +
MAXIMUM RATING (Tc=25
www.DataSheet4U.com ) 3. SOURCE
RATING
TO-220AB
CHARACTERISTIC SYMBOL KHB7D0N65F1 UNIT
KHB7D0N65P1
KHB7D0N65F2
KHB7D0N65F1
Drain-Source Voltage VDSS 650 V A C
F
Gate-Source Voltage VGSS 30 V
O
E DIM MILLIMETERS
@TC=25 7 7*
B
A _ 0.2
10.16 +
G
ID B _ 0.2
15.87 +
Drain Current @TC=100 4.2 4.2* A C 2.54 +_ 0.2
D _ 0.1
0.8 +
E _ 0.1
3.18 +
Pulsed (Note1) IDP 28 28*
K
F _ 0.1
3.3 +
G _
12.57 + 0.2
Single Pulsed Avalanche Energy EAS L M
212 mJ R H _ 0.1
0.5 +
(Note 2) J J 13.0 MAX
K _ 0.1
3.23 +
Repetitive Avalanche Energy EAR
D
1.6 mJ L 1.47 MAX
(Note 1) N N
M 1.47 MAX
H
N 2.54 +_ 0.2
Peak Diode Recovery dv/dt _ 0.2
dv/dt 4.5 V/ns O 6.68 +
(Note 3) Q _ 0.2
4.7 +
R _ 0.2
2.76 +
Q
1 2 3
Drain Power Tc=25 160 52 W
1. GATE
PD 2. DRAIN
Dissipation Derate above 25 1.28 0.42 W/ 3. SOURCE
S
P
15.0 +
RthJA 62.5 62.5 /W C _ 0.3
2.70 +
Junction-to-Ambient D 0.76+0.09/-0.05
E Φ3.2 + _ 0.2
* : Drain current limited by maximum junction temperature. L L F _ 0.3
3.0 +
K
R
G _ 0.3
12.0 +
PIN CONNECTION M H 0.5+0.1/-0.05
J
D D J _ 0.5
13.6 +
D K _ 0.2
3.7 +
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N N H N _ 0.1
2.54 +
P _ 0.1
6.8 +
Q _ 0.2
4.5 +
R _ 0.2
2.6 +
0.5 Typ
Q
1 2 3 S
G 1. GATE
2. DRAIN
3. SOURCE
S TO-220IS
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 650 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.8 - V/
Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.75A - 1.2 1.4
Dynamic
Total Gate Charge Qg - 32 40
www.DataSheet4U.com VDS=520V, ID=7.0A
Gate-Source Charge Qgs - 5.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 12.6 -
Turn-on Delay time td(on) - 20 45
VDD=325V
Turn-on Rise time tr - 40 90
RL=46 ns
Turn-off Delay time td(off) - 125 260
RG=25 (Note4,5)
Turn-off Fall time tf - 80 170
Input Capacitance Ciss - 1310 1700
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 113 147 pF
Reverse Transfer Capacitance Crss - 11.4 14.8
Source-Drain Diode Ratings
Continuous Source Current IS - - 7
VGS<Vth A
Pulsed Source Current ISP - - 28
Diode Forward Voltage VSD IS=7.0A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=7.0A, VGS=0V, - 410 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 4 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =8mH, IS=7.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 7.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
VGS
TOP : 15.0 V
10.0 V
1
8.0 V 10
Drain Current ID (A)
25 C
10
0 -55 C
0
10
-1 -1
10 0 1
10
10 10 2 4 6 8 10
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Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
1.2 3.0
VGS = 0V
On - Resistance RDS(ON) (Ω)
IDS = 250
1.1 2.5
1.0 2.0
VG = 10V
0.9 1.5
VG = 20V
0.8 1.0
-100 -50 0 50 100 150 0 5 10 15
3.0
VGS =10V
Reverse Drain Current IS (A)
IDS = 3.75A
2.5
Normalized On Resistance
1
10
2.0
1.5
0
10
1.0
150 C 25 C
0.5
-1 0.0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -100 -50 0 50 100 150
4500 12
Frequency = 1MHz ID=7A
VDS = 325V
3000 8
VDS = 130V
2500
6
2000 Ciss
1500 4
Coss
1000
2
Crss
500
0 0
10-1 100 101 0 4 8 12 16 20 24 28 32
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Drain - Source Voltage VDS (V) Gate - Charge Qg (nC)
1ms 100µs
10ms
1ms
100ms
10 ms
100 DC 100 DC
10-1 10-1
Tc= 25 C Tc= 25 C
Tj = 150 C Tj = 150 C
Single nonrepetitive pulse
2 Single nonrepetitive pulse
10 10-2 0
100 101 102 103 10 101 102 103
Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V)
Fig11. ID - Tj
8
Drain Current ID (A)
0
25 50 75 100 125 150
Junction Temperature Tj ( C)
100
Duty=0.5
0.2
PDM
10-1 0.1
t1
0.05
t2
0.02
0.01 - Duty Factor, D= t1/t2
Single Pulse
10-2
-5 10-4 10-3 10-2 10-1 100 101
www.DataSheet4U.com 10
TIME (sec)
100
Duty=0.5
0.2
PDM
10-1 0.1
t1
0.05
t2
0.02
0.01
- Duty Factor, D= t1/t2
Single Pulse
10-2
10-5 10-4 10-3 10-2 10-1 100 101
TIME (sec)
10 V
Fast
Recovery
ID Diode
0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
www.DataSheet4U.com Qg
VGS
1 BVDSS
EAS= LIAS2
2 BVDSS - VDD
BVDSS
L
IAS
50V
25Ω
VDS ID(t)
Time
tp
Fig16. Resistive Load Switching
VDS
90%
RL
ton toff
VGS
10V
IRM
IS
Body Diode Reverse Current
0.8 VDSS
VDS Body Diode Recovery dv/dt
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(DUT)
driver VSD
VDD
10V VGS
Body Diode Forword Voltage drop