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Advanced Technology Electronies CO., LID.
TO3PN Plastic-Encapsulate Transistors
D4515 TRANSISTOR(NPN)
ABSOLUTE MAXIMUM RATINGS (‘Ta=25'C)
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Characteristic Symbol} Value | Unit
Collector-Base Voltage vero | 700 Vv
Collector-Emitter Voltage | Vero | 400 Vv
mitter-Base voltage VEBO 9 v 2
Collector Current Ie 15 A a
Collector Power Dissipation | Pe 120 w
Junction Temperature Tj 150 c TO-3PN
Storage Temperature Tsig | -55~+150| °C
ELECTRICAL CHARACTERISTICS (Ta=25°C , unless otherwise specified)
Characteristic Symbol Test conditions | MIN | TYP | MAX | Unit
Collector -base breakdown voltage | V(BR)cao 000HA JtE=0 | 700 v
*Collector -emitter Sustaining Voltage | V(BR)cEO Ic=10mA ,1B=0. 400 Vv
Emitter cut-off current leo veB=9V, IC=0 10 | nA
hFR() |VCE=5V, _IC=2A 15 50
DC current gain hFR(2)_|VCE=5V, _IC=5A 10
hFR(3) _|WcE=5V, IC=10A_|_ 8
Collector -emitter saturation voltage Ver(sat) |TC=10A, IR=2A 1 v
Base-emitter saturation voltage Var(sat) |TC=10A, IB=2A 1.5| Vv
Base Emitter Voltage Var(on) IE= 2000 mA 3 |v
Current Gain Bandwidth Product fr VCE=10V, Ic=0.5A | 4 wu
Turn On Time Ton hs
Storage Time ts ver=24V 106A, 3 | os
Fall Time tf TBi=-TB2=1. 24 0.7 | ps
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Advanced Technology Electronics CO., LID.
Typical Characteristics D4515
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Advanced Technology Electronies CO., LID.
TO-3PN JVERYTEI fits mm
TO-3PN
19, 9540.2
19.65+0.2