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Irf610, Sihf610: Vishay Siliconix
Irf610, Sihf610: Vishay Siliconix
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 200
Available
• Repetitive Avalanche Rated
RDS(on) () VGS = 10 V 1.5
• Fast Switching RoHS*
Qg (Max.) (nC) 8.2 COMPLIANT
Qgs (nC) 1.8 • Ease of Paralleling
Qgd (nC) 4.5 • Simple Drive Requirements
Configuration Single • Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G cost-effectiveness.
The TO-220AB package is universally preferred for all
S commercial-industrial applications at power dissipation
D levels to approximately 50 W. The low thermal resistance
G S
and low package cost of the TO-220AB contribute to its
N-Channel MOSFET wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
IRF610PbF
Lead (Pb)-free
SiHF610-E3
IRF610
SnPb
SiHF610
- 4.5 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 7.5 -
S
101
VGS
Top 15 V
10 V
8.0 V
7.0 V 100
6.0 V
5.5 V
100 5.0 V
Bottom 4.5 V
10-1
10-1
4.5 V
10-2 20 µs Pulse Width
20 µs Pulse Width
TC = 25 °C VDS = 50 V
91023_01 VDS, Drain-to-Source Voltage (V) 91023_03 VGS, Gate-to-Source Voltage (V)
3.5
VGS ID = 3.3 A
Top 15 V VGS = 10 V
3.0
10 V
8.0 V
ID, Drain Current (A)
2.5
7.0 V
(Normalized)
100 6.0 V
5.5 V 2.0
5.0 V
Bottom 4.5 V 4.5 V
1.5
1.0
10-1
0.5
20 µs Pulse Width
TC = 150 °C 0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91023_02 VDS, Drain-to-Source Voltage (V) 91023_04 TJ, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature
300
VGS = 0 V, f = 1 MHz 101
Ciss = Cgs + Cgd, Cds Shorted
200
Ciss
150 150 °C
100
Coss 25 °C
100
50 Crss
VGS = 0 V
0 10-1
100 101 0.4 0.8 1.2 1.6 2.0
91023_05 VDS, Drain-to-Source Voltage (V) 91023_07 VSD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 102
ID = 3.3 A Operation in this area limited
VGS, Gate-to-Source Voltage (V)
5
by RDS(on)
VDS = 160 V 2
16
10
ID, Drain Current (A)
VDS = 100 V
5
VDS = 40 V 100 µs
12 2
1 1 ms
5
8 10 ms
2
0.1
4 5 TC = 25 °C
For test circuit 2
TJ = 150 °C
see figure 13 Single Pulse
0 10-2
2 5 2 5 2 5 2 5
0 2 4 6 8 10 0.1 1 10 102 103
91023_06 QG, Total Gate Charge (nC) 91023_08 VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
RD
VDS
VGS
4.0 D.U.T.
RG
+
- VDD
3.0
ID, Drain Current (A)
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
2.0
Fig. 10a - Switching Time Test Circuit
1.0
VDS
90 %
0.0
25 50 75 100 125 150
10
Thermal Response (ZthJC)
0 − 0.5
1
0.2
0.1
PDM
0.05
0.02 Single Pulse
0.1 0.01 t1
(Thermal Response)
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10
L
VDS VDS
Vary tp to obtain tp
required IAS
VDD
RG D.U.T +
VDD
- VDS
I AS
10 V
tp 0.01 Ω
IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
140
ID
EAS, Single Pulse Energy (mJ)
80
60
40
20
VDD = 50 V
0
25 50 75 100 125 150
Current regulator
Same type as D.U.T.
QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF
QGS QGD +
VDS
D.U.T. -
VG
VGS
3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
- +
-
Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test
VGS = 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 % ISD
Note
a. VGS = 5 V for logic level devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91023.
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE Xi’an
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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