IRF520, SiHF520

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 100
• Repetitive Avalanche Rated Available
RDS(on) () VGS = 10 V 0.27
• 175 °C Operating Temperature RoHS*
Qg (Max.) (nC) 16 COMPLIANT
• Fast Switching
Qgs (nC) 4.4
Qgd (nC) 7.7
• Ease of Paralleling
Configuration Single • Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D

TO-220AB DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
S
D commercial-industrial applications at power dissipation
G S levels to approximately 50 W. The low thermal resistance
N-Channel MOSFET and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF520PbF
Lead (Pb)-free
SiHF520-E3
IRF520
SnPb
SiHF520

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 9.2
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 6.5 A
Pulsed Drain Currenta IDM 37
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energyb EAS 200 mJ
Repetitive Avalanche Currenta IAR 9.2 A
Repetitive Avalanche Energya EAR 6.0 mJ
Maximum Power Dissipation TC = 25 °C PD 60 W
Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 , IAS = 9.2 A (see fig. 12).
c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91017 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF520, SiHF520
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 2.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 100 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5.5 Ab - - 0.27 
Forward Transconductance gfs VDS = 50 V, ID = 5.5 Ab 2.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 360 -
Output Capacitance Coss VDS = 25 V, - 150 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 34 -
Total Gate Charge Qg - - 16
ID = 9.2 A, VDS = 80 V,
Gate-Source Charge Qgs VGS = 10 V - - 4.4 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 7.7
Turn-On Delay Time td(on) - 8.8 -
Rise Time tr VDD = 50 V, ID = 9.2 A, - 30 -
ns
Turn-Off Delay Time td(off) Rg = 18 , RD = 5.2, see fig. 10b - 19 -
Fall Time tf - 20 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS die contact - 7.5 -

S

Drain-Source Body Diode Characteristics

MOSFET symbol D
Continuous Source-Drain Diode Current IS - - 9.2
showing the
G A
integral reverse
Pulsed Diode Forward Currenta ISM S - - 37
p - n junction diode
Body Diode Voltage VSD TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb - - 1.8 V
Body Diode Reverse Recovery Time trr - 110 260 ns
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb
Body Diode Reverse Recovery Charge Qrr - 0.53 1.3 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91017

2 S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF520, SiHF520
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VGS
Top 15 V
10 V 25 °C
101
8.0 V
101
ID, Drain Current (A)

ID, Drain Current (A)

7.0 V
6.0 V 175 °C
5.5 V
5.0 V
Bottom 4.5 V

4.5 V
100
100

20 µs Pulse Width 20 µs Pulse Width

TC = 25 °C VDS = 50 V

10-1 100 101 4 5 6 7 8 9 10

91017_01 VDS, Drain-to-Source Voltage (V) 91017_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

3.0
VGS ID = 9.2 A
Top 15 V VGS = 10 V
10 V 2.5
101 8.0 V
ID, Drain Current (A)

7.0 V
6.0 V 2.0
(Normalized)

5.5 V
5.0 V 1.5
Bottom 4.5 V 4.5 V

100 1.0

0.5
20 µs Pulse Width
TC = 175 °C
0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
91017_02 VDS, Drain-to-Source Voltage (V) 91017_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91017 www.vishay.com

S11-0511-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF520, SiHF520
Vishay Siliconix

750 101
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted 175 °C

ISD, Reverse Drain Current (A)

600 Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)

450
Ciss 25 °C
100
300
Coss

150
Crss
VGS = 0 V
0 10-1
100 101 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
91017_05 VDS, Drain-to-Source Voltage (V) 91017_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 103
ID = 9.2 A Operation in this area limited
5
VGS, Gate-to-Source Voltage (V)

by RDS(on)
VDS = 80 V 2
16
ID, Drain Current (A)

VDS = 50 V 102
5
VDS = 20 V 10 µs
12 2
100 µs
10
5 1 ms
8
2
10 ms
1
4 5
TC = 25 °C
For test circuit TJ = 175 °C
2
see figure 13 Single Pulse
0 0.1
2 5 2 5 2 5 2 5
0 4 8 12 16 20 0.1 1 10 102 103

91017_06 QG, Total Gate Charge (nC) 91017_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91017

4 S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF520, SiHF520
Vishay Siliconix

RD
VDS
10
VGS
D.U.T.
RG
8 +
- VDD
ID, Drain Current (A)

6 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

4
Fig. 10a - Switching Time Test Circuit

VDS
0 90 %
25 50 75 100 125 150 175

91017_09 TC, Case Temperature (°C)

10 %
VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

0 - 0.5
1
0.2
0.1 PDM
0.05
0.1 0.02 t1
0.01 Single Pulse t2
(Thermal Response) Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91017_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91017 www.vishay.com

S11-0511-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF520, SiHF520
Vishay Siliconix

L VDS
VDS
Vary tp to obtain tp
required IAS VDD
RG D.U.T +
V DD
- VDS
IAS A
10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

600
ID
EAS, Single Pulse Energy (mJ)

Top 3.8 A
500 6.5 A
Bottom 9.2 A
400

300

200

100

VDD = 25 V
0
25 50 75 100 125 150 175

91017_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91017

6 S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF520, SiHF520
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91017.

Document Number: 91017 www.vishay.com

S11-0511-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A MILLIMETERS INCHES
E DIM.
MIN. MAX. MIN. MAX.
F
A 4.24 4.65 0.167 0.183
ØP b 0.69 1.02 0.027 0.040
Q

b(1) 1.14 1.78 0.045 0.070

H(1)

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
1 2 3
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1)

L(1) 3.33 4.04 0.131 0.159

M* ØP 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
L

DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

C
b
e
J(1)
e(1)

Package Picture
ASE Xi’an

Revison: 14-Dec-15 1 Document Number: 66542

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Legal Disclaimer Notice
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Disclaimer

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Revision: 08-Feb-17 1 Document Number: 91000