a) 1,1 SEMICONDUCTOR DIODES: 1. Conductivity is proportional tothe concentration 1n of free electrons. For conductors n = 10% electrons/m’,foraninsulatorn=10’ electrons/ m®, Fora semiconductor nies between these two values, 2. The valance electrons in a semi conductor are not free to wander about as they are in ‘metal, but they are trappedin a bondbetween two adjacent ions (covalent bond) (electron pair) 3. Ge and Si are widely used semi conductors. ‘The crystal structure ofthese materials consists ‘of a regular repetition in three dimensions of ‘unit coll having the form of tetrahedran with an atom at each vertex. 4. At low temperatures semi conductors are Insulators, 5. Aniricomplete Covalent bondis calleda hole. A hole may serve as a carrier of electricity comparabiein effectivenesstothetres electron, A pure semi conductor is known as intrinsic semi conductor. The intrinsic concentration in-varies with temparature in accordance with the relationship = AGT Sook n? = oT? 6 Where A, is @ consant of the material, E,,= band gap energy of the material at O°K, K =Boltzman gonstant = 1.38 x 10°-J/k? T = Temparature in absolute %. -. The conductivity of Ge (Si) is foundtoincrease 6 (8)percentper degree increaseintemparature, Extrinsfesemi conductor : Impuresemiconductor To increase the conduativity, the pure semi conductoris doped with either trivalentatoms (acceptor inpurity) or penta valent atoms (donor impurity) resulting in p-type or n-type semi conductor. 9. Thetrivalentimpurity Indium, The pentavalent impurity .. Boron, Gallium, P, As, Sb, 10. The amount of impurity which must be added tohave an appreciable effectin the conductivity Is vory small, Example : ia donor impurity is added to the ‘extent of 1 part in 10°, the conductivity of germanium at 30° ¢ is multiplied by a factor 12, 11. Inap-type semi conductor holes are majority ‘carriers and electrons are minority carriers and inan-type semiconductor, electrons are majority carriers and holes are minority carriers. 12. Inan-typematerialthe ree election concentration is approximately equal to the density of donor ‘atoms. In @ p-type semi conductor the hole ‘concentration is approximately. equal to the density of the acceptor atoms. 18. A semi conductor is electrically neutral 14 Not P= Nani np=nz 18. Formilevel is a measure of the probablity of Sccupancy of the allowed energy states. In a ure (intrinsic) semi conductor, the fermilevel exactlyliesin the middie ofthe forbidden energy gap. This indicates equalconcentrations offree electrons and holes. E, moves from center of the forbidden gap-closor to the valance band fora p-type material. E, moves from the centre ofthe forbiddenband gap dosertothe conduction band for a n-type material. As the temperature of either n-type or p-type material increases, the feimilovel moves towards the center of the energy gap. ‘SriKrishnaveni Educational Academy, VJAELBCTRONICDEVICES& CIRCUITS 16. Both diffusion and’ mobility are statistical thermodynamic phenomena. They are related through Diets Te7 7 Me Ginstcin equation) Where V, = voltage equivalent of temparature KT =T/ 11,600. I E At room tomp, V, = 26 mv. 17. Onan average a hole (an electron) will exist for T, (T,) seconds before recombination. This Is called the meat life time of the hole and electron respectively. These range from fewnanosecondsto hundreds of microseconds. 18. Gold is extensively used as a recombination agent. 19. If a semi conductor carrying a current | is placed in a transverse magnetic field 6, an electric field E is induced in the direction perpendicularto both andB. This phenomenon is known as Hall effect, is used to determine whether a semi conductor is n-or p-type and to find the carrier concentration : known o, can be calculated. 1 1 Tesistivity ° Hall coefficient R,, = mobility 1 = 0 Ry V, = hall voltage developed = BV/pw, where W = width of the specimen. 20. P-njunction i donorimpurities are introduced into oneside and acceptors into the otherside of a single crystal of a semi conductor, say germanium, ap-njunetion isformed. (Impurity concentration is 1 part in 108, width of the depletion region is 6 microns) 21, The unneutralised ions in the neighbourhood ofthe Junction arecalledas Uncoveredcharges. The region of the Junction which is depleted ‘of mobile charges is called depletion region ‘or space - charge region or the transition region. The thickness of this region is of the order of 10 cm = 10° m = 1 micron. 22. The p - n Junction acts as a diode. Forward bias {E13} A K 4, ak PIX Diode Schematic symbol — Reverse bias 28. V, = barrier potential or contact difference potential across the Junction. V, for Ge is 0.3 v and for Si, V, = 0.7v. V, is independent of the directton and magnitude of the current. Itis not possible to measure contact difference of potential directly with a voltmeter. 24. Under reverse biased conditions : a) the diode current is due to minority carriers. ‘The magnitude of this current is very smail (few micro amps). This current is known as reverse saturation current. b) The depletion tayer width increases. ¢) The resistance of the diode is very large (ideally the Reverse resistance of the diode must be infinity) 25. Under forward biased conditions : a) The diode currentis due to majority carriers, the magnitude of the current is high (few milllamps) b) The depletion layer width decreases. ¢) The forward resistance of the diode is very small d) Ina forward-biased p-n diode, the currentELECTRONIC DEVICES & CIRCUITS ELECTRICALENGG. entotsthe p:sideasa hole currentandleaves || 3. Even if the initially available carriers do not the n-side as an electron current of the same acquire sufficient energy to disrupt bonds, It magnitude. possible to Initiate breakdown through a i direct rupture of the bonds because of the rent through a p-n dunction diode is 26. aia calle site existance of the strong eletric fleld. Under ie these circumstances the breakdownis reflered pet, (= to as zener breakdown. Where : 4, Zener effect... breakdown voltages below 6v 1, = reverse saturation current, ‘Avalanche breakdown... greater than 6V. V, = Volt. eqvt: of temp. = T/11,6000 5. A zener diode is heavily doped. 1 = emission constant, and n= 1 for large currents (Ge) 6. Zenerbreakdownvoltage decreases withincreased 2 for small currents (Si) Separates V_ = applied potential. 7. Avalanche breakdown voltage increases with 27. |, is in the range of microamperes for a nee eee manium diode and few nanoamperes for Ssilcondiode : 8, The VR tube Is the tube equivalent of zener diode. 128, Thereversesaturation currant, |,,approximately |] doubles for every 10°c rise in temparature. || 9. The temparature coefficient is defined as the percentage change in reference voltage per. 29, The reverse saturation current increases Centigrade degree change in diode temparatute. approximately 7% per °C for both silicon and Below 6v, where true zener breakdown is germanium. ‘ involved, the temparature coefficient is negative. - If the reference voltage is greater than 6v, 3g nr caren: renee eforced || were the physical mechanism is avalanche +e momce drit current sald flow. multiplication the temparature coefficient is positive, * piffusion Current : Whenever charges are forcedtomoveby thedifferenceinconcentration || 10. A zener diode Is used as a voltage regulator. ofcharge carriers with inthe systemof charge ticles with outany potential diffusion current || 44. In tunnel diode. (Esaki diode) the Impurity said to flow. concentration is 1 part in 10°, and the width 1.2 ZENER DIODES: of the Junction barrier is 100A° (10°° om) 12, Width of the Junction barrier varies inversely a ee eaay oa Pega as the squareroot of impurity concentration. (a) Avalanche breakdown 43, The V- I, Characteristics of a tunnel diode (b) Zener breakdown has a negative resistance characteristic. If 2. In one mechanism, the thermally generated the ‘diode ‘ts. blased In the - ve resistance ioe rardholesacquire sutfientenergy |] fealoa, It can be used.as an amplifier or from the applied potential to produce new oscillator. ‘carriers by removing valance electrons from 14. Germanium and Gallium Arsenide are the most theirbonds. Thesenew carriers, intum, produce additional carriers again through the process of disrupting bonds. This cumulation process ig roffered to as avalanche breakdown. widely used materials for the fabrication of tunnel diodes. ‘Sri Krishnavenl Educational Academy, VJAELECTRONICDEVICES & CIRCUITS [1.3 RECTIFIERS 1, Rectifiers are used to convert A.C into D.C. 2. The process of converting A.C into D.C is called as rectification, 3. Ripple factoris a measure of theac fluctuations in the output of a rectifier. Ripple factor=RiM.S, valueofthe accomponents of a wave / Average (or) D.C value of a wave Fe Eh Oo r= FET whereas F mt (08) Yam 4. Efficiency = The amount of the de power delivered to the load/AC input power at the transformer secondary 5. Regulation of a Rectifier determines the amount of de output voltage variations from no load to the full load VE Seay "Regulation = —=ist——_tbbet x 100 Vv 6. Filters are used to reduce (or) filter the ac ‘components in the output of a rectifier 7. Inductor filter is suitable for low value of load resistors. Capacitor filter is sultable-for high value of load resistors. 9. InL section filterthe ripple factors independent of Load resistor. 10. The main function of regulator is to keep tho OIP voltage of the de supply constant even when i) AC input voftage varies li) the load varies. 111. Usually zener diodes and transistors areused for voltage regulation purpose. ELECTRICALENGG. 12. The purpose of Bleeder resistor is 1) Itimprovesvotagereguiatonofthesupoly ii) Itprovides safely to the technician handling the equipment: JAREGULATION& REGULATED POWERSUPPLIES: 1. Inanunregulated power supply output voltage changesdue tochangesin input supply voltage or due to changes in load resister. 2. The change in voltage from no load to full foad condition is called voltage regulation. 3. Voltage regulation circuitis to reduce variations in output. of unregulated power supplies. 4. Zener diode voltage regulator $ Regulated output Unregulated supply Zener diode will regulate so long as itis kept in reverse condition. 6. Zener diodo is suitablo for small variation in supply voltage, load. 7. Regulator are classified by the way they are connected to the load as series and shunt regulators, 8. Both series & shunt regulators uses three basic elements a precision voltage reference (zener diode), an orror amplifier and power control element (Transistor) 9. Seties regulatoris used when the load current varles from zero to a fixed maximum. ‘Shunt regulatoris used when the load current varles from finite miminum value to a finite maximum value. Ho. 1.$ FIELD EFFECT TRANSISTORS (FET): 1. [tis three terminal device in which the drift currentbetiveen its outputterminalsis controlled by an olecttic fleld created by the voltage applied between its input terminals. SriKrishnaveni Educational Academy, VIA CHAC On a4 esELECTRICALENGG. ELECTRONIC DEVICES & CIRCUITS ~~ . JEET.... depletion MOSFET depletion mode only. FET < IG FET .. Enhancement MOSFET (MOSFET) 3. JFET —: Junction FET 4. 1G FET : Insulated gate FET 5, MOSFET: Metal oxide semi conductor FET 6. BIT Bipolar Junction transistor. 7. REThas several advantages: (a) tis unipolardovice. Transistoris a bipolar device (current is due to both holes and electrons) (b) it is relatively immune to radiation. (c) It exhibits high input resistance (several ‘magaobms) (¢) It exhibits no offset voltage at zerodrain current and hence a signal chopper. (e) it has thermal stability. (f) It is less: noisy than a tube or a BJT. 8. Disadvantage : thas relatively small value of gain band width product. 9. In its structure, a FET resembles that of a triode and it's charctoristics resembles that of apentode. (Constant currentcharoteristics) 10. In the characteristics of a FET, we can see three regions. a) Region 1 : In which as Vp, increases, |p increases. Thisregionis called Ohmicregion. In this region the FET can be used as a WR (Voltage Variable Resistor) b) Region 2 : Constant ourrent region. The Drain source current I, isindependent of Vo fora fixed value of Vag. The FET can be used as an amplifier if operated in this region ) Region 3: Bréak down region (avalanche). Generally the FET is not operated in this region, 11. Pinch-off voltage : The voltage betwoen gate and source for which the drain current log is. 2010, 12. parameters of FET : F V5 | V,.= (a) drain resistance : 1, = “Gj foonstant i, Bi, |v (b) transconductance Bo |cotistant is (©) amplification factor : jt = 94X f, i 21, Ves o ge ee Byes Sno = Vv. | {agp and Vp are of opposite sign, 9,, is always positive. 18. lp, has the same temp variation as does g, ‘Theprincipal reason fornegative tempcoetficient of I, is that the mobility decreases with increasing temperature. Since the majority carrier current decreases with temperature, the phenomenon of thermal runaway, is not encountered with FETs. 14. MOSFET canbe operatedinboth enhancement mode and depletion miode. 15.FET Is used as a voltage variable resistor. VVR or VDR is operated in the region before pinch-off, where Vos is small 16. The drain-to-source resistance is controlled by the bias voltage Veg 17.PMOS is slower inv switching application. 18.NMOS Is faster in switching application 1.6 TRANSISTOR CHARACTERISTICS: 1. A transistor has S-terminals. Emitter (E). Base (B) and Collector (C). 2. Ina transistor there are two Junctions. Je... mitter Junction (Emitter base junction Se oes ‘Sri Krishnavenl Educational Academy, VJA.ELECTRONICDEVICES& CIRCUITS and J,... Collector Juriction (Collector-Base) junetion) 3. Emittorisheavily doped, collectoris moderately doped base is lightly doped. 4, Iva transistor J, (E = B Jn) must be forward biased, J, (C - B junction) must be reverse biased, (Active region) 5. As per KOL and KVL, let ly tle =O ANd Veg + Veg + Vee = 0 6. Atransistor can be operated in CB, CE, CC configurations. CE transistor configuration is most preffered. 7. Transistor is used as an amplifier. 8. Atransistor canbe operatedin active region, in saturation region, in cut off region. Region 4. Je Cutoff reverse reverse biased biased active forward reverse biased biased saturation | forward forward biased biased 9[ Parameter in pep | In n-p-n Vex +e -ve Veg + ve +e le + ve = ve i -ve + ve is =ve + ve 10. In its active region, the collector current is given by Ip ==, 0 be + leo I, = Ing where a=Large signal curent gain 11. The techniques thathave been developedtor the manufacture of diodes and transistors are (a) grown (b) alloy (c) electrochemical (a) diffusion (e) epitaxial tehniques. ELECTRICAL ENGG, 12. Anincrease in magnitude of collector voltage increases the space - charge width at the output Junction diode, Such action causes the effective base width W to decrease, phenomenon known as “Early effect”. 1 1y=1+B = (- a) 1 Ye sp eommon collector configuration —€omon ‘emitter configuration ls a= Eeommen base configuration 14. Typical n-p-n transistor Jn.voltages at 25°C. Vee | Voc | Voc |Moe | Vor (sat) _| (sat)| (active)|(cut In)|(cut off) si o.8v | o7v]} o6v jo.5v | 0.0v ce ov |osv] o2v fotv |-o.1v 15.When a transistor is used as a switch, it is usually made to operate alternately in the'cut off condition and in saturation. 16. The mechanismby which transistorsusefulness may be terminated as the collector voltage is increased is called punch through or reach through and results from the increased width ofthe collector-Junction transition region with increased collector - Junction reverse Voltage. (Early effect) 18. Punch through differs from avalanche breakdown Inthatittakes place ata fixed voltage between collector and base and is not dependent on circuit confighration. Sri Krishnaveni Educational Academy, VIAELECTRONICDEVICES & CIRCUITS ELECTRICAL ENGG 20.While representing transistor small signal model H-parameters model is preferred | 21. Bana wath (BW): tis therange of frequencies over which an amplifier performance is satisfactory. BW = Fy F When F,, & F, upper & lower 3 48 (cutoff frequencies, 22, Lower Uppercutofffrequencies are frequencies at which gain decreases to 1/2 times of its maximum value. 23. Toimprove gaincharacteristictsdifferentstages are used in cascade. 24, Depending upon the. coupling device used multistage amplifiers are classified as )) RC coupled amplifiers iil) Transformer coupled amplifiers i) Direct coupled amplifiers 1.8PHOTOELECTRICEFFECT: 1. The liberation of electrons trom matter under the influence of light is known as Photo electric effect (Hertz, 1887) 2. Photo electric effect includes (a) liberation of electrons from a metallic surface and (b) generation of hole - olectron pairs in semi conductors when these soilds are subjected to radiation. The first phenomenon called emissive effect and is exploited in Vaccum and gas photo tubes. 8. Photo effects in semi conductors may be subdivided into two-types : 4) The photo Conductiveeffect : The electrical conducting of a semi conductor bar depends upon the light intensity and +b) The Junetion Photo effect: (Ie) the current across a reverse biased p - n, Jn is deter- mined by the intensity of illumination. If the P-ndnis open circuited, an emfis generated, This phenomenon Is called Photo Voltaic Effect, Sri Krishnaveni Educational Academy, VJA 40. "1 12, The maximum velocity of emission of thol Photo electrons increases withthe frequency | of the incident light. Maximum energy of the electrons liberated| Photo electrically is independent of the light} intensity but varies linearly with the frequency, of the incident light. Photo electric characteristics are practically} independent of temparature. Alkali metals are used as photo electric emit- ters, Eg : Li, Na, K, Ab, Cs. Qanta.of Energy E = ht fh = planck's constant = 6.626 x 10 W/s f = frequency, monochromatic light of frequency falls upon @ metal whose work function is E, (ev), corresponding to U,, (Joules), the velocity of the emitted electron, is (according to Einstein) Vy MV? = ht =U, Cutoff wave length or threshold wave length} is the wave length of the impinging light beyond which photo electric emission cannot take place. 4, = 12400 where. Bis eel work function in ev Photo multiplier tubes are used to obtain larga| magnitudes of currents, the no. of anodes| usedina photomultiplier tube is cailed dynodes. The basic Principal of operation of a photo| multipier tube is. secondary to primary elec- trons Is S, and if there are n - dynodes, the| current at the collector is i = i, $* where |, is the initial current at the photo cathode. Photo conductivity : If radiation falls upon al semiconductor, its conductivity icnreases. Radiant energy supplied to the semi conduc- tor causes Covalent bonds to be broken and hole electron pairs in excess of those gen- erated thermally are created. The increased! current carriers decrease the resistance off the material known as Photo resistor, Photo| conductor.ELECTRONIC DEVICES & CIRCUITS 1 1,7 VOLTAGE AMPLIFIERS: ‘When transistoris used an amplifier for faithful amplification (amplifted signal without any change in shape) the following three conditions must be satisfied. 1) Theemitterbase junction should be forward biased. li) The collector base junction should be reverse biased and. * iil) There shouldbe properzerosignalcollector ourrent. . The propertiow ot zero signal collectorcurrent and maintaince of proper collector-omitter voltage during the passage of signals known as transistor biasing. The values of |, Vee under zero signal conditions is known as operating point. Operating point depends on mainly two factor i) Temp i) B Due to temperature variation Ig, Vag varies Forevery 1*riseintemporature; I,ginereases. by 7% of its initial value, Forevery Wcriseintemporature, Vy, decreases by 2.5 mv. ‘The maintenance of the operating point stable is known as stabilisation. ‘Tomaintain the operating point stable we use two techniquies. i) Stabilization techniques: Inthis technique to maintain operating point stable resistive biasing circuits are used. Differenttypes of resistive biasing circuits are fixed bias, collector to base bias, self bias etc. 10. WW 12. 13. 14. 15. 16. 17. 18, 19, li) Compensation techniques: Inthis techniqué] to. maintain operating point stable, a/ temperature sensitive devices Ex. diodes, transistors, thermistors, sensistors are! used along with biasing circuits. Stability factor ‘S’ is defined as the rate of change of collector current |, with respect to the reverse saturation current I... keeping B.Vge Constant Le. a, Teo 1B. L a lc 1 By Vo constant s= The ideal value of s is Abiasing circuit which establishes the proper, operating pointthis ensures faithfulamplification of the signal. Most commoniyused biasing circuit is self bias. ‘Aninputcapacitor C,, which couples the signal) to the base of the transistor it is not used, the signal source resistance will change the bias conditions of the circuit. This capacitor allows only ac signal to flow isolating the signal source from biasing circuit, Acoupling capacitor isolates de of one stage from next stage. But allows the passage of ac signal, Acmilter by pass capacitor provides a low reactance path to the amplified ac signal to avoid tho effect of negative feed back. There are two typos of load lines namely de oad lines and ac load line. The d.c. oad line determines the locus off |e & Vee In the zero signal conditions. The ac load line determines the values off I, and Voge When signal is applied. Sri Krishnaveni Educational Academy, VJAELECTRICALENGG, ELECTRONIC DEVICES & CIRCUITS 13. Cds, Pbs are the most widely used photo conductive materials. 1.8 SILLICONCONTROLLEDRECTIFIER (THYRISTOR): 1. SCRis.a3- terminal semiconductor switch- ing device. 2. SCRis used as a switch to perform functions like rectification, inversion and regulation of power flow, 3. Itcanhandle currents upto thousand amperes. and voltages upto more than 1 kv. 4, Its tube equivalentis thyratron, ahot cathode gas triode. 5. SCR combines the features of a rectifier and transistor. (pn pn device) 6. The symbolic representation of SCR is A Lo Op fn te tn [Cathode @ Anode J, “J, J, 7. Inthe notmal operating conditions of SCR, anodeis maintained ata higher + ve potential wrt, cathode and gate at small -ve potential wrt cathode. 8 SCR can be made to conduct heavily at a smaller applied voltage by applying a small positive potential to the gato, 9. Theminimum forward voltage gate being open, at which SCR starts conducting heavily (ie) tured ON Is known as Break over voltage. (Range 50 - 500 V) 10. The max reverse voltage, (cathode + ve wit anode) that can be applied to an SCR without conducting in the reverse direction is known as peak reverse voltage. (Range is above 2.5 kv) 11. The max anodo current, gate being open, at which SCR is tumed off from ON condition is known as Holding current, 12. The max anode current that an SCR Is ca-| pable of passing without destruction is known| ‘as forward current rating. (Range is 30 Ampere ... 100 Ampere) 18. Unjunetion transistor (UJT) has only one p+ junction, although it has certain similarities in construction with FETS. UJTs are used as switches for rapid discharge of capacitors and| hence are made use ofin relaxation oscillator, Such relaxation oscillators are useful for trig} geting of SCR. 14, Diacis a three layer device, like a transistor. it is ideally suitable for use as a triggering| device for SCRs. 15, SOR Is used as a static contactor, used for ‘speed control of de shunt motor. SILICON CONTROLLED SWITCH (SCS): 16. SCS consists of 4 alternate p - and_n-type| layers. SCS is also called as p-n-p-n tran sistor or n-p-n-p switch. 17. SCS suffer from Rate effect as do the diode, The inclination of a switch to fire prematurely| because of the rate effect may be suppressed| by operating the switch with a larger reverse| bias on the gate anc'by reducing the resis- tance between gate and cathode. 18. SCR is a 3 terminal SCS With the principal] difference that the operate at higher currents and voltages. 18. SCR are used to control large amounts of powers, whre as SCS is indended for tow level logic and switching applications. 20. Thyristor is like the SCS in that a largo! tviggering signatis required toturn it OFF than| to turnit ON. thyristor is faster. Turn on time 25 Sec Turn off time .. 100 nsec. Since the device material is germanium, the} holding current - to - emitter voltage (0.3v) Is smaller than in SCS, ‘Sri Krishnaveni Educational Academy, VIAELECTRONICDEVICES& CIRCUITS ELECTRICAL ENGG, 21.An SCS can be used as a () comparator (ii) saw tooth waveform generator (iii) muttivibrator or flip - flop. It.9 DISPLAY DEVICES: Light emitting doide : 1, LEDis operated under forward bias condition Light is emitted from the junction region. 2, LED has a high forward voltage, typical volt- age drops across LED is 1.6 - 2V. Itneeds more power of the orderof 16-20 mw. They have very high speed of response. 4, The materials used: GaAs, Gap, Inp, GaAsp 5, Material | Forbidden | Colour of| Wave Energy gap| Light — | largo GaAs 1.37 ev dark red /9100°A GaP ov green] B60] 6. If we supply energy from outside to a semi conductor, it generates hole-election pairs. Conversely, if hole and an electron recom- bine, some amount of energy is released. In what form this energyis released ?itdepends on the type of the semi conductor. In silicon and germanium, the released energy goes into the form of heat. Liquid erystal display : 1. Liquid erystal are the materials which have both liquid and crystalline properties. 2. Liquid crystal is an intermediate phase be- tween liquid and crystal. 3 The orystals are available in semetic and nematic and cholesteric phases. Outof these nematic phase liquid crystals are widely used for display devices. ‘SriKrishnaveni Educational Academy, VIA 10 4, Liquid crystals are sonsitive to environmental conditions like temparature, mechanical stresses chemical environment electtic fields and ra- diation, any change in these parameters will! change the optical propértios.of liquid crys-| tals, They are translucent and in turbid form. Mostof the liquid crystals are produced organic) materials. 5. The LCD materials aro |) MBBA: (4-methorey-4-n-buts. Benzyliden| anilin) is widely used for display devices. it has elongated rod like structure. It is in the| nematic form between 21 - 48%, ii) Penty! cyane diphenyl is another material|| for LCD and has nematic form between 18°c-| 36°, iti). Cholestery! nonanoate is also used. iv) Dynamic scatterring display and the twised} | nematic fleld effect display are the typés of display and the latter display is preffored. 6. Crystal display has the following charactatistics: |) Ithas the advantage of having lower power| requirement than the LED, about 50 nw asi] ‘compared to 20.mw in the LED. il) LCD requires an external or internal light Source. iii) LCD display is limited to. a temperature| range of about upto 60°. iv) Its life time is less, LCD can chemically degrade.HIGHLIGHTS OF THE TOPIC EMI CONDUCTOR DIODES: 1. The characteristics of an deal diode are those of a switch that can conduct current in only one direction, 2. The forward resistance of an ideal diode is zero. 3. The reverse resistance of an ideal diode is infinity. 4. Semiconductor materials such as Ge and Si are saidtohave negative temperature coefficient. 5. A Semiconductor maierial that has been subjected to the doping process is called an extrinsic material. 6. Diffused impurities with five valence electrons are called donor atoms. Ex : Antimony, Arsenic, Phosphorus 7. The diffused impurities with three valence electrons are called acceptor atoms. Ex : Boron, Gallium, thdiu . n-type material is electrically neutral. p-type’ material is electrically neutral. 10. The region of uncovered positive and negative ions is called the depletion region, due to depletion of carriers in this region. Inthe absence of an applied bias voltage, the niet flow of charge in any one directon for a semiconductor diode is zero. . The current that exists ina diode under reverse bias conditionsis called the reverse saturation current. 18. A semiconductor diodes forwardbiased when the association p-type and positive and r- type and negative has been established. 14, Avalanche breakdown is due to collisions of thermally generated carriers. ELECTRONIC DEVICES & CIRCUITS 15.Zenerbreakdownisduetostrong electicteld | in the region of junction that can disrupt the bonding forces within the atom and generate cartlers. 16. The reverse saturation current will just about double in magnitude for every 10°C increase in temperature. 17. Typical cutin voltages of Si and Ge are 0.7V and 0.3V respectively. 18. The width of depletion layer increases with the increase in reverse voltage. ZENER DIODES: 19.Zener diode is a heavily doped diode, 20.Zener diodes are used in voltage regulators. 21. The temparature co-efficient of breakdown voltage Is negative below 6 volts and is positive above 6 volts. 22. Zener breakdown does not involve collisions ofcarriers with the crystalions asin Avalanche break down. 23. Typical impurity concentrations usedin zener, diode are 10°: 1. 24.Doping Concentration Device 10* Parts of Si or Ge Ordinary Diode 10* Parts of Si or Ge Zenerdiode 10% Parts of Si or Ge Tunnel diode 25.Avalanche breakdown is a cumulative phenomenon 26.Zener_ breakdown is a sudden phenomenon 27. Avalanche breakdown occurs in lightly doped ‘material. 28.Zener break down occurs in heavily doped material, 29, For high frequency application Ge diodes are proferred. 30. Zener diode can be used as clipping circuit and also used for voltage protection. u ucational Academy, VIAELECTRONICDEVICES& CIRCUITS, | voltage which is ultimately depends on primary ELECTRICALENGG. RECTIFIERS ANDFILTERS: 4, In Reotifior Ckts the values Of Vay: Vings PIV of diotie depends on the secondary voltage and turns ratio. 2. The PIV rating of a diode used in HWR with capacitor Filter is 2Vm. 3, Thecurrentflowingthroughthe diode in capacitor {iltoris pulsating nature whichis called ‘Surge current. 4. Ininductor Filter If the value of ‘L’ increases. 1) Ripple factor decreases (improves filtering action) {iy The time period during which the diode conducts will be extended. Peak current in the diode decreases. 6. Incapacitor Filtorif the value of ‘C' Increases. 1) Ripple factor decreases (improves fitering action) ii) Tho time period during which the diode if conducts will decreases. iil) Increases the Peak current in the diode 6. In zener voltage regulator Zener Is always operated under Breakdown region. 7. To get high regulated de voltage which is er than the rated voltage of a zener great 1d in series diode, Zeners can be connecter ‘8, Zenerdiodes are suitable only forsmallchanges in V, and R.- 9. Tho value of ripple factor in HWR with = = fitter is r= V2 X, Xoy RX where as X_ = HANG: Xe, = HVC, XW {0, The value of ripple factor in FWR with x-fter is t = Y2X_ Xe AX where as X_= V2WO; X;=1/2WO,sX 20, FIELD EFFECT TRANSISTORS: 4.'In_ FETs, the current flow Is controlled by electric field, 2. There are two main types of FETS, viz Junction FET. and MOSFET. 3, JFETs are available in N-channel and P- channel types. 4, Pinch-off voltage Vp, when applied to the| gate, reduces the effective channel width to zero, thereby allowing a negligible amount of current flow. ‘The drain characteristics of JFET shows three regions, viz, channel ohmic region, pinch-off region and break-down region. ‘6. Inchannel ohmic region, the FET canbe used ‘as voltage dependent resistor (VDR), whereas, the pinch-off region is used for amplifier ap- plications. 7. The important parameters of FET are : Drain Resistance, r,; Transconductancee, g,, and] Amplification factor yi. 8. The two main types of amplifiers are] commonsource (CS) and common drain (CD) types. 9. MOSFETs have very high input resistance! duo toa layer of oxide insulating the gate from| tho channel. 40. MOSFETs can be either enhancement type ‘only, or deplotion / enhancement type, a l ‘SriKrishnaveni Educational Academy, VJA 2ELECTRONIC DEVICES & CIRCUITS ELECTRICALENGG, 11, RECTIFIERS WITHOUTFILTER: ‘Specification Rectifier (Ideal Value) HWR: FWR BR a 47 fat we aif | 2i,fr tap Vit Far 1/2 ie | iyo Vee qT hvat Vit av,fm | -2v,ft Vine Vira V2 Vy{N2 | VNB Ripple factor VW Fimsiidoy- 1 1.21 0.482 | 0.482 (efficiency) P,/P,,(100%) 406 a2 | 812 Reguiation Meee Miers RR | RR, | RR, PIV Vn av, | 2v, utputsignal frequency when fy 2, at, inputsignat frequency is tm Tur PJP, (rating) 0286 | 0.693 | oget 12. RECTIFIERSWITHFILTER: Filter ckt used Rectifier Vae Ripple factor Inductor Fitter } HWA Wal 70) = lag (RY 1.13 BL FWR (2V gf 7) = yy (R) Rs V2 WL Capacitor Filter } HWR: Verlyl 2 12NBICR,) FWR Vas * lads 1K4NBICR,) Whore as Single HWR Vy = ba, (A) Ex f x mae) L-Seetion Filter 8X DLs We Whar | FWA 2V,) m= ty, (RY EX, px ewe} asi (exam } Where es | multiple HWR V,/ > Ide (R,) "ox WC Beste | L-Seotion Filter Leena FWA 2Vqf = ly, (Ry) "ix. ewe Ze)" eats} Note: R= R¢R,+Ray | R=R/+R,+nR,,, Where In’ is number of L sections. / Z ee eeaeecee = J 3 Sri Krishnaveni Educational Academy, VIAELECTRONICDEVICES & CIRCUITS ELECTRICAL ENGG. 11, -Source self-bias and fixed bias with self-bias, are common methods of biasing JFETs and depletion MOSFETs. For enahancement MOSFETs, the biasing is different. 12. Because of easy of fabrication MOSFET'S used for Digital IC's. 13. In common drain configuration the voltage gain is nearly equal to 1 14. In common source configuration the phase difference between input & output is 180°. 1. In FET parameters aro related by = ote ‘TRANSISTORS : 1. There are two types of BVT, viz, p-n-p and repr. 2, Transistor can be manufactured from either Ge or Si. 3. There are four basic techniques of manufac- ture of transistors viz., Grown-lunction, Al- loy, diffusion and Epitaxial 4, ‘fthe transistor is viewed simply as two back- to-back diodes, then the transistor action cannot be understood. 5. Itisnecessary tohave a very thin base region for the transistor action to take place. 6. The transistor current components have been analyzed andthe inter-relation between them have been established, The most important among these is the rolation, |, = -c -lp +ly- 7. There are three possible configurations of using a transistor viz, common-base, com- mon-emitter and common-collector. 8. The three regions of operation viz, active, cutoff and saturation have been discussed with respectto biasing requirement of emitter and collector junction. . 9. The effective width of the base region changes according to the base-collector (reverse) voltage. This is known as Early effect, 10. The common - emitteris the most widely used configuration |, = (1+ B) |, + B. important relation for this configuration. 11. The input characteristics for a forward - bi- ‘ased base - emitter junction is principally same as the V- | characteristic of a forward biased diode. 12.The common - collector characteristics are the same as those of common emitter char- acteristics. 13.n-p-n_ transistor is preferred over p transistor because mobility of electrons is greater than that of holes. 14, The Ebers - Moll mode! represents a transis tor as a combination of two diodes and two current generators. 15. Tho power rating of a transistor when plotted on the output characteristic graph, repre- sents a hyperbola and denotes the limitting condition of operation of the active region. 16. The maximum voltage rating of transistor is determined by either avalanche breakdown voltage, or punch - through voltage, which- ever is less. 17.CE amplifieris preferred over others because it offers both voltage gain and current gain greater than unity. 18. CC amplifiers also known as emitter follower. 19. INCE configuration the phase difference between Input & output is 180". VOLTAGE AMPLIFIERS: 1. Thestabiltyfactorfortixedbias crcutS= 1+ 2. Fixed bias is suitable for fixed value of p 3. Tho stability factor for collector to base bias circu. 148. cance * RoR Sa 4, For zero value of load resistance the stability factor of a collector to base circuit is t + 8. Sri Krishnaveni Educational Academy, VIA 14 T ee aC ee MeELECTRONIC DEVICES & CIRCUIT ELECTRICALENGG. 5. The stability factorforselfbias (or) emitter |] 6. — Inhartleyose. the frequency of oscillations bias f= W/2n Ve (L,+L,) 7. In colpitts oscillator circuit frequency of oscillation by f = 1/2n VLC, where C, = C,C, /C,+C, where a8 R, = R,||R, 8 6. In self bias circuit to avoid feed back problem a bypass capacitor is connected across Ri, 9 The natural frequency of orystal is f=Kn, 7.” The destruction of transistor du to sell Where K Is constant depends on cut Pare aera 1 is thickness of the crystal 8 To avoid the problem of thermal runaway 1! 49 in general frequencies between 25KHz to lee < Vedl2 5MHz can be obtained with crystals. 9. BW = ff, 10. Forcascade stages Bandwidth decreases. |! os ororupes, Desielecanl ens 1. Photomuttipiiers are based on the principle 1. In transistor RC phasa shift oscillator the of secondary emission, f foed back : "ype of foad back used is voltage shunt. 1] 5 in photo conductive effect radiations of 2. In FET RC phase shift oscillator the type wave length greaterthan critical length will of feed back is voltage series. not produce free electrons. 3. In LC tuned oscillator qe frequency of || 3. Photo multiple tubes are used fordetecting oscillations f = 1/ 2n VLC very low-amount of light. 4. In transistor RC phase shift oscillator the frequency of oscillations f= 1/2n AC Vee4k |] * The current that exists in a diode under whore k= RUA reverse bias conditionsis called he reverse saturation current. 5. In FET RC phase shift osc the frequency of oscillation. 5. A semiconductor diode is forward biased f= 12x RC V6 when the association p-type and positive ie andn-typeandnegative hasbeen established. mparision of CB, CE, CC configuratons: oy od oe x Fg Fgh = UAiy A Low High High (0.98) (50) (251) R Low Medium High (R = 2 to 3k) 20 to 302 1 to 2k 70-150k Ry High Medium Low 1-2 MQ about 5k 10 to 800 Power gain High A Phase difference | Nil 180° Nil 15 SriKrishnaveni Educational Academy, VIA.ELECTRONIC DEVICES & CIRCUITS ELECTRICAL ENG J eS ere a) In a Zener diode regulator the supply! voltge = 300V, V, = 220 V, I, - 15 mA and| load current =25mA. Calculate the value] of resistor required to be connected in| series with the Zener diode. 1 The total current | IL = 15 mA + 25mA Sol = 40 mA The supply voltage V = 300 V and Zener voltage V, = 220V. The voltage difference between these i.e. 300-220=80Vis dropped across resistor R. BOV=ELR oF ee eoce 80V T “FOX 10% Amp = 2x 10° = 2k silicon diode has a veverse saturation! current of 1pA at25°c the value of current at 55% Is _ Sol :8}/A because for every 10°crise intemparature| IC, becomes double. 3, Find the current in the SKQ resistance In| the circuit shown In figure. sun we | a ov Vege = 2mA What will be the PIV rating of diode used in the Circuit... eer anf SoLPIV = 10 V because when the diode is reverse biased the voltage between A & B is 10V. 5. Azener diode has a power rating of 4 Watt and zenor, voltage of 20V. What is the maximum zener current that It can carry safely. aw — = 200 mA 20V Sol : Maximum zener current 6. Inagivenzener voltage regulator the power rating of zener diode, when R = 2 KQ R An 5 mA Vili = 10 x 15m = 0.15W. Sri Krishnaveni Educational Academy, VIA 16 ¢ELECTRONIC DEVICES & CIRCUITS ELECTRICALENGG. RECTIFIERS & FILTERS: 5. Ifthe ripple voltage in Fullwave rectifier is 25V at a load current of 60 mA. What 1, For a given rectifier calculate the value would be its value at a toad current of of ripple voltage if Vde=10V ripple factor 120 mA. is 2% , Sol: 50 V; Ripple factor = V',, / Vy ripple factor x Ide v Sol: Ripple factor =. pple factor = pple factor x Vy, vi 0.02 = 7 2 ogg 8 lag Views = 0.2V It |,, becomes double V',,, becomes double A 10:1 transformer Is used In Halfwave a rectifler find no load voltage what Isthe || © ene a en voltage 7 Bov PIV rating of diode used. with a ripple factor of 5% what is the ripple output? 301 ; Secondary voltage is 23V (rms). Sol :Rlppla voltage V 2 0.05 x 80 = 4V Vm = 23V; Vm = V2 x 23v = Vm _25¥ 7,” Inthe figure ripple factor Is equal to 5% rts = and the ripple voltage (r.m.s) Is 4v, what a Is the d.c. voltage ? PIV = Vm = 23¥2 Ina particular rectifier circult if turns of secondary is doubled PIV rating of a diode. :Because as turns of secondary is doubled secondary voltage becomes double so PIV rating of diode is doubled, Caleulate the ripple voltage of a Haltwave rectifier with 100, 1 filter capacitor connected toa load of 100mA with Input signal frequency is 50 D 8, Hahalfwarerectitier has a ripple voltage iV els ON Vine = of 30v, what will be Its value In the 100 x1 equivalent full ware rectifier ? 218 x 50 x 100 x 10¢ Sol :Ripple voltage‘is inversely proportional to the number of half wave inputsin the circuit. a7 Sri Krishnaveni Educational Academy, VA.ELECTRONICDEVICES& CIRCUITS ELECTRICAL ENGG. Ripple Voltage = 15 2 9. ifthe ripple voltage In full wave rectifier Is 25v at a load current of 60mA, what would be Its value at a load current of 120mA ? Sol:The ripple voltage is directly proportional to the load current. <. Ripple voltage for a toad of 120mA = = x 120 = 50v 60 10, A100V(r.m.s.) secondary feeds asilicon rectifer and a filter capacitor with no load what Is the.voltage across C? Peak value of secondary voltage = 100x 7p 141V. Since there is a voltage drop of 0.6v in silicon diode, the capactor will be charged to a dc, voltage = 141-0.6 = 140.8V lOSCILLATORS : 4, In tuned collector oscillator L = 50mH C=20PFis used calculate the frequency of operation. Sol: f= 1/2n VG = 1/2 VE0KTO"%20x10* = 10%2n = 0.16 MHz. 2. In FET RC phase oscillator if the value ofRtis doubled then frequency ofoperation Sok:t = 1 / 2xRCVE if R doubles frequency is halved. 3. Findthe operating frequency ofatransistor Bartley oscillator if L1=25 mH L2=25 mH ‘C=20PF. Sol: { = 1/2 V(LsL,) G = 0.16 mHz. ‘ a Sol: Sol: 6 Sol: Sol: Find the operations frequency of atransistor| colpilts oselllatorif C,=C,=0.01 pf. L =200:H) f= ten EE ©, = C,CJC,+C, = so, f = 0.16 MHz .005 pf A crystal has the following parameter L = 33H, C, = 0.042PF & R= 390 What is the Q of the crystal, If crystal! operates at 430 KHz? Q = UR = 2nfUR = 23000 In Wein Bridge oscillator R1=R2=100KHz| C,=C,=0.01 pf what will be the frequency, of oscillations. f 412m x100x10°x0.01x10¢ 0.16KHz Inthe circult shown fig. L=100mH, C=10PF| to what frequency will the circuit tune? Resonant frequency fr = 1/n2VLC = 1/2nN100x10%x1 0x10" Sri Krishnaveni Educational Academy; VJA 18ELECTRICALENGG. ELECTRONIC DEVICES & CIRCUITS EXERCISE -1 (Questions on Basic Concepts) SEMICONDUCTOR DIODES: 1. A poor conductor of electricity is called. 1) an insulator 2) metal 8) @ semiconductor 4) none of the above 2. The substance whose conductivity is in between conductor and insulator is called 1) an insulator 2) metal 3) semiconductor 4) none of the above 3. Diamond is an example for 1) insulator 2) conductor 3) semiconductor 4) none of the above The forbidden energy gap is more for 1) insulator 2) conductor 3) semiconductor 4) none of the above Intrinsic semiconductors behavelike at low temperatures 1) conductor 3) insulator 2) metal 4) none of the above 6. The conductivity of the semiconductor in- creases as temperature... 1) increases 2) decreases 8) remains constant 4) not determined 7. The forbidden energy gap tor the semicon- ductor decreases as temperature 1) increases 2) decteases. 3) remains constant 4) none of the above 8. The forbidden energy gap for silicon at room temperature is 1) 1.21 ev 3) 0.785 ev 2) 1.tev 4) 0.72 ev. 9. The forbidden energy gap for germanium at room temperature is 1) 121 ev 2) t.t0v 3) 0.785 ev 4) 0.72 ev. 10. The forbidden energy gap is zero for 1) conductors 2) metals: 3) botha&b 4) silicon SS 11. Overlapping of valence band and conduction band occurs in 1) metals 2) conductors 3) semiconductors 4) both a & b 12. The average distance between collisions is called 1) free path 2) mean path 3) mean free path 4) none of the above 13. The magnitude of the drift velocity is proportional to 1) electric field 3) current 2) magnetic field 4) none of the above 14, The equation J = of is known as 1) point form of ohm's law 2) Joule's law 3) Einstein equation 4) none of the above 15. The following are the two important semiconductors used in electronic devices 1) Ge, Si 2) Diamond, carbon 3) Ge, carbon 4) none of the above 16. Example for tetravalent atoms 1) Ge, Si 2) C, Go 3) ©, Si, Ge, Sn 4) none af the above 17. Tin is an example tor 4) metal 2) semiconductor 3) insulator 4) none of the above 18. Tho energy required to break the covalent bond for silicon at room temperature is 1) 0.785ev 2) 0.72ev 3) 1.21 ev A) t.tev 19. The charge of the hole... 7 ANA IS corners fa) magnitude to that of electron charge 1) positive, greater 2) positive, same 8) zero, same ——4) none of the above 20. Ina pure semiconductor the number otholes are. sane the electrons 1) greater than 2) same as 3) less than 4) none of the above ‘SriKrishnaveni Educational Academy, VJAELECTRONICDEVICES & CIRCUITS 21. The conductivity of Ge (Si) increases ap- PIOXIMALELY. nserseeresneves BOT EGTER IN- crease of temperature / 1) 6 (8) 2) 8 (6) | 8) 10 (12) 4) none of the above 22. For metals the conductivity decreases as temperature 1) increases 2) decreases 3) remains constant 4) none of the above RECTIFIERS: 23. Rectifiers convert 1) dc. to a.c. 2) ac to dc 3) Ov to ac. 4) none 24. The forwardresistance of crystal diode ...jfS reverse resistance 1) lessthan 3) greaterthan 2) equal to 4) none 25. Crystal diode recti fiers are generallyused for «....application. 1) high voltage 2) low voltage 3) very high voltage 4) none 26. .....ectfierhas the lowest forward resistance. 4) Solid State 2) Vaccum tube 3) Gas tube 4) none 27. The forward Voltage drop across a crystal diode......as the load demand varios 1) Varies over a wide range | 2) Remains essentially constant 3) decreases over a wide range 4) none 28. Mainsa.c. powerisconvertedinto d.c. power tor 4) lighting purposes 2) heaters 8) using in electronics equipment 4) none 29. Ina halfwave rectifier the load current flows for 1) the complete cycle of the input signal 2) only for the positive half-oycle of input signal 9) lessthan ‘half oycle of input signal 44) morethan half cyclo butlessthan hecomplete cycle of input signal ELECTRICAL ENGG, FET: 30. The saturation drain current Inq in. an FET equals 1) Noss1-VasVe) 3) Ioce V1-(Woe!Vo) 2) Ingglt-Voa!Vp} 4) SOV) 31. The transconductance g,, of an FET in the saturation region equals” 1) Alps /Vo(1-VosVe) 2) -BlocalVo(t-VealYy) 3) -BlpagVolt-VegVo)™ 4) 1WNplloss bos)" 32. n-channel FETs are superior to p-channel FETs because: 4) they have lower switching time 2) they have lower pinch off voltage 8) they have higher input impedance 4) mobility of charge carrier electron in n- channel FET Is greater than the mobility of charge carrier hole in p-channel FET 83. The charge carriers in an n-channel FET are 1) electrons alone: 2) holes alone 3) both electrons and holes 4) may be either electrons or holes 34. When the gate to source voltage Vas Of @ p-channel JFET is made more positive, the drain current 1) increases 2) decreases 3) remains constant 4) may increase or decrease ‘TRANSISTOR CHARACTERISTICS: 35. Tho no. of terminals for the transistor 12 2)3 34 3) none 36. Transistortransfersa signalfrom....resistance 10 wn. resistance 4) low, high 2) high, low 3) tow, low 4) high, high 37. The three portions of a transistor are known as 1) emitter, base, collector 2) anode, cathode, collector 3) anode, grid, cathode 4) none of the above ‘SriKrishnaveni Educational Academy, VIA38. The arrow on the emitter lead indicates lead indicates the direction of current flow when the emitter - base junction is..... 1) forward biased 2) reverse biased 3) both a&b 4) none of ihe above 39, The emitter diode is always ....... Where aS collector diode is... 1) Forward biased, reverse biased 2) Reverse biased, F.B 3) FB & FB 4) None of the above 40. In the BJT the current Is due to 1) holes 2) electrons. 3) both holes & electrons 4) none of the above 41. The base of transistor is thin compared to 1) emitter 2) collector 3) both omitter & collector '4) none of the above 42. The emitter is highly doped compared to 1) base 2) collector 38) base & collector 4) none of the above 43. The ‘base of wansistor is lightly doped compared to 1) emitter 2) collector 3) both a&b 4) none of the above 44, The width of collector is more compared to 1) emitter 2) base 3) both base & emitter 4) none of the above 498. A transistor has... Pn junctions 1)3 2)2 34 4) none of the above 48. The function of the transistor is 1) Amplification 2) Rectification 3) both a&b 4) none of the above 47. The input resistance of the transistor is... its output resistance 1) Less than 2) More than 3) equal to 4)none ELECTRONIC DEVICES & CIRCUITS al, 4)none 49. The value of current gain is less than a)2.b) 1 ¢) 100d) none 50.1. = al, + i lo 2) lew aI, 4)none 51. The value of ineterms of Yalta 2) tala 3) at +a 82, Transistor is an.. 1) active 3) resistive 83. The common-base shortelrcultamplfication factor is givenly 1) ALJ Al, IVoq = Constant 2) AIS Aly IVge = Constant 3) Als Al, [VG, = Constant 4) AIY Aly [Vc = Constant VOLTAGE AMPLIFIERS: 64. The zero signal values of lo and VCE are known as the. 1) operating point 3) both a & b 2) Quiscent point 4) none of the above 55. Q-point should be properly established in order that 1) the transistor operates over a specified range 2) Max. linear swing is obtained 8) Max. collector power dissipation is not exceeded 4) all of the above 56. Find the operating point of a transistor, if AL=5k zero signal current |, = 1MA Ve = 10v 1) 5V, 1mA 3) 6V, 1mA 2) 6V, 2mA 4) OV, ImA 57. The process of raising the strength ofa weak signal without any change in its general shape is known as. 1) faithful ampttie 3) regulation 1n 2) rectification 4) none of the above 2 SriKrishnaveni Educational Academy, VIAELECTRICALENGG. ELECTRONIC DEVICES& CIRCUITS 58. Biasing represents.,....conditions 67. For faithful amplification on the collector- 1) ac. 2) ac. emitter voltage Vee. for silicon transistor 4) should not fall below 1 V 3) both d.c and a.c 4) none of the above 59. The key factor forachieving faithful amplifier is the input circuit....biased and output circuit...biased at all times 1) Forward, reverse 2) Forward, Forward 3) reverse, reverse 4) reverse, Forward 60. The following basic conditions should be satisfied for amplification 4) Proper zero signal collector current 2) Min proper base-emitter voltage at any instant 3) Minimum propercollector-emitter voltage at any instant 4) all of the above 61, The value of zero signal collector current should be..... Max. collector current due to. signal alone. 4) at least equal to 2) greater than 3) both a&b 4) none of the above 62. The proper flowotzero signalcollector current and the maintenance of proper collector- ‘amitter voltage during the passage of signal is known a8... 1) transistor biasing 2) amplification 3) rectification 4) none of the above in the circuit 63. Biasing is done to keop.. 4) proper direct current 2) proper alternating current 9} the base-current smail 4) collector current small 64. If biasing is not done in an amplifier circult it results in 4) decrease in base current 2) unfaithful amplification 3) excessive collector bias 4) none of the above 65. Biasing is generally provided by a... 4) biasing circuit 2) bias battory 3) transistor 4)none cf the above 66. For faithful amplification the value of Vee ‘should for Ge transistor 1) be zero 2) be 0.01v 3) not fal felow 0.5v 4) between 0 & 0.01 2) should not fall below 0.6V 3) be zero 4) none of the above 68, The operating point is determined graphi- cally by. 4) intersection of a.ctoad line and the given base current ourve 2) intersection of d.c & a.c load lines 3) intersection of d.cgiven base currenteurve 4) none of the above 69. The collector current ina transistor changes when 4) the temperature changes 2}the transistor is replaced by another of same type 9) both a & b 44) none of the above 70. The operating point varies due to 4) the collector reerse current 28 8) Vee 4) all of the above 71, The process of making operating point in- dependent of temp. changes or variation in transistor parameters Is called... 4) amplification 2) biasing 3) stabilisation 44) none of the above 72. The stabilisation of the operating point is necessary due to the following reasons 4) temperature dependence of !C 2) individual variations 8) thermal runaway 4) all of the above 73. The self-destruction of an unstabilised transistor is known as 1) Biasing 2) stabilisation 3) thermal runaway 4) none of the above 74. The commonly used method of obtaining transistor biasing aro 4) base resistor method 2) biasing with feed back resistor 8) voltage divider bias 4) all of the above ‘Srikrishnaveni Educational Academy, VJA 2ELECTRICALENGG, ELECTRONIC DEVICES & CIRCUITS OSCILLATORS: 78. An electronic oscillator is 1) An amplifier 2) An amplifier with negative feedback 3) converter of ac to de 4) converter of do to ac An oscillator is an electrical equivalent of 1) Alternator 2) Rectifier 8) Transformer 4) none 76. TT. Forgetting sustained oscillations inanoscillator 1) AB>t 2) Phase shift introduced by both amplifier and feed back network equal to zero 9) Feed back should be negative 4) both (1) and (2) By using tank circuit you can generate 1) Damped oscillations 2) undamped oscillations 3) Square wave 4) none of the above ia el Se (Questions for Students Pract The fermilevel for intrinsic semi conductor Meee 1) center of the forbidden’ eniergy band 2) nearer to conduction band 3) nearer to valence band 4) none of the above Pentavalont impurities are 1) antimony 2) phosphorus 3) arsenic 4) all of the above Trivalent impurities are 4) boron 2) gallium 3) indium 4) all of the above Innv-type semicondctOrs....0 enn AO Majority Carriers aNd.e..ncseu@8 Minor ity carriers 1) electrons, holes 2) holes, electrons 3) protons, electrons 4) none of the above 5. if pentavalent impurity is added to the in- trinsic semiconductor the donor energy level 1) lies in the center of forbidden energy band 2) moves nearer to the conduction band 3) moves nearer to the valence band 4) none of the above Wf trivalent impurity is added to the intrinsic semiconductor the acceptor energy level 1) lige in the center of the forbidden energy gap 2) moves nearer to the conduction band 3) moves nearer to the valonce band 4) none of the above ‘As temperture of either n-type or p-type material increases, the fermi level 1) moves towards the center of the energy gap 2) moves towards. the conduction band 3) moves towards the valence band 4) none of the above Einstein equation is given by 1) Du, = D, 1, = Vp 2) nD, = yO, = Vi 8) Dy fi, = D, Mu, = Vy 4) néno'of the above The advantage of hall effect is 1)used to determine whethera semiconduc- tor is nor p type 2) to find cartier concentration 3) to measure conductivity 4) all of the above 10. Conduction in intrinsic semiconductor con- sists of jin the conduction band and in the valence band 1) electrons, holes 2) electrons, electrons 8) holes, électrons 4) holes, holes 11. Inthe space charge region the mobile charges: are 1) more 3) zero 2) less 4) none of the above 12, Under reverse biased conditions the nega- tive terminal batiery is connected side ofthejuction andpositive to. terminal to the. . side tpn 2) mp 3)n,n 4) none of the above 23 SriKrishnaveni Edueational Academy, VIA.ELECTRONICDEVICES& CIRCUTTS . € ELECTRICAL ENGG. 13. Under reverse biased conditions the height of the potential barrier 1) is increased 2) is decreased 3) remains same 4) none of the above 14. Under forward biased conditions the height of the of the potential barrier 1)is increased 2) is decreased 8) remains same 4) none of the above 18. The current tn a diode 1S e.scseseees If character 1) biopolar 2) unipolar 3) both a &b 4) none of the above 16, Tho V - | relation for a p - n diode is 1) b= 1, (oT1) 2) T= I, (eT) Sta (Tt) 4) 1= 1 (eT) 17. The cut in voltage for germanium is 1oav 2) 0.6v 907 4) none of the aboves 18. The reverse saturation current for germa- ... that of silicon nium is a 7) equal 2) greater than 3) less than 4) none of the above 19. At high currents the diode behaves like 4) resistor 2) insulator 3) conductor 4) none of the above 20. Reverse saturation current doubles for ise in temperature every. 1) 10% 2) 1% 8) 12% 4) 20% 21. For an alloyjunction the thickness of the depletion layer increases with applied re- verse voltage ny, 3) Vi" 2," 4) none of the above 22. For a grown junction the thickness of the depletion layer varies as 1) Vp"? 2) Vv," 3) vise 4) vive RECTIFIERS: 23. The maximum rectification efficiency of a halfwave rectifier is 1) 81.2% 3) 50% 2) 40.6% 4) 25% 24, Ina halfwave rectiication itthe input frequency is 50HZ, then output has a frequency of 1) 12.5 HZ 2) 25 HZ 3) 10 HZ 4) 50 HZ 28. The ripple factorofa half-wave rectifieris.. 12 aytet 3) 0.48 4)25 26. The disadvantage of hall-wave rectifier is that the... 1) components are expensive 2) diodes must have a high power rating 3) output is difficult to filter 4) none 27. The output of a half-wave rectifier has a.c. component...... the d.c. component 1) equal to 2)morethan 3) lessthan 4) none 28. Ifthe a.c. input ioa HWE has ant.m.s. value of 400/12 Volts, then the diode PIV rating ist) 400 v 2) 400/ V2 8) 400 x ¥2 4) 400 x 3 29. A full wave rectifier is ......a8 effective as a half wave rectifier. 4) twice. 2) thrice 3) tWo and hait-times 4) fourtimes 30. in a full wave rectifier, the current in each of the diode flows for 1) the complete cycle of input signal 2) half cycle of input signal 8) for zero time 4) morethan half cycle- of input signal FET: 31. The main drawback of a JFET is its : 1) high input impedance 2) low input impedance 3) higher noise 4) lower gain 92. The transconductance 9, of a JFET is of the order of 1 ms 3) 1008 218 4) 10008 rishnaveni Educational Academy, VJAELECTRONICDEVICES & CIRCUITS ELECTRICALENGG. [ 33. The dynamic drain resistance of a JFET is tthe order of : ) 1k 2) 10kQ 3) 500k 4) 100Ma 34. The magnitude of the threshold voltage V, for enhancement MOSFET is of the order of: 4)4 volts 2) 10 volts 9) 40 volts 4) 100 volts 38. The JFET can operate in : 41) depletion mode only 2) enhancement mode only 3) either depletion or enhancement mode at at a time 4) both deplotion and enhancement modes simultaneously ‘TRANSISTOR CHARACTERISTICS: 36. The range of is. from 1) 0.9 10 0.998 2) 0to 5 8) -1t01 4) 1 to 10 37. Forcommon base configuration... terminals, is common to both /p and output 4) base 2) emitter 8) collector 4) none 38. The collactor characteristics ofcommon base & common emitter have..... regions 22 4) none of the above 39. The regionspreseritinthe outputcharacteristics of Transistor configuration are 4) active, cut off 2) cutoff, saturation 3) saturation, active 4) active, cutoff, saturation 40. In the active region the collector junction is..... biased and emitter junction..... biased 1) Reverse, foward 2) Forward, Reverse 38) Forward, Forward 4) Reverse, Reverse 41. The region employed for the amplification of the signal 4) cut off region 2) active region 3) saturation region 4) all of the above 42. In the cut off region the collector & emitter Junctions are 1) both reverse-biased 2) both forward biased 8) reverse biased, forward biased 4) none of the above 43. In the saturation region the collector and emitter junctions are 1) both forward biased 2) both reverse biased 3) forward & reverse biased respectively 4) none of the above 44, ifthe colector voltage increases the effective base width decreases, this phenomenon is known as 4) Punch through effect 2) Avalanche, effect 8) Early effect 4) rione of the above 48. The input characteristics of transistors are similar to that of 1) Forward biased PN juncti 2) Reverse biased PN junction 3) Forward biased Tunne Idiode 4) None of the above 46. if the transistor is used in CB connection the collector characteristics consists’ of 1) horizontal lines of | VS Vae with by controlling parameter 2) horizontal lines ofl, VS Veg with I, controlling parameter 8) horizontal lines of |, VS Vag with ty controlling parameter 4) None of the above 47. The current gain f, is defined as 1) tele 2) Illy 8) Wile Adi, 48. The majority carrier current in either CB or CE is controlled by 1) Small base input voltage 2) Small base input current 8) Emitter current 4) none of the above 49. The total leakage current flowing through the transistor when base is open is BY logy = (1+ Blo 1) eso, = 4) None sl} 28 ‘Srl Krishnaveni Educational Academy, VJAELECTRONICDEVICES & CIRCUDS S— 80. Wich region’ ‘of common-emitter configuration isused{orvoltage, ‘currentorpower ampltication 3) cut off 2) active 3) saturation 4) all of the above VOLTAGE AMPLIFIERS: st. if the Max, collector current due 10 signal fone is mA, then zero signal collector aiyrent should be at feast equal {0 1) 1mA 2)3.mA 3) 6 mA 4) 1.5 mA 52. The disadvantage of base resistor method is that it 4) is complicated 2) is sensitive to changes in B 3) provides high stability 44) none of the above 53. Stability factor ‘S" is defined as 1) S = Bl Blo. / B gconstant Big Joly! PVqeconstant 3) S = Ble/ 8B / le, Vegconstant '4) none of the above 84. The minimum value of ‘S' Is 4) 4 2) zero 3) 4) none of the above 55. A biasing circuit has a stability facto’ of 50, it due to temperature change lero Changes by 1uA then [, will change bY 4) 100 WA 3) 25 wA 3) 200 KA 4) 50 wA 56. The value of ‘S’ for the fixed blas circuit is 146 2) 8-1 31-8 4) none of the above 57. The disadvantage of biasing with feedback resistor : 4) poor stabilisation 2) provides negative feedback 3) both a & b 4) none of the above 58, The best method of bias 's- 4) potential divider 2) self bias 3) both a& 4) none of the above ‘SuiKrishnaveni Educational Academy, VIA oe 59. The zero signal IC is generaly Intel stages of @ transistor Amplifier 4) mA 2) 3.mA 3) 2.5 mA 4) 4.mA 60.1n order to achieve good stablialen potential divider method current through R, Pi, should be at least..times |e 2)5 1) 2 3) 10 4) 20 a1, The leakage ourrent in a sifcan transit a pout..the leakage current Ina Ge tran sistor {yone hundredth 2) one-tenth 3) one thousandth 4) one mitionth 62. For proper amplification the oper should be located at. 3) the max. current point 4) none of the above 63. In an CE transistor amplifier If collector un iter voltage increases theinstrantaneous operating point @) moves up the toad line 1b) moves down the foad line c) moves at right angles to the load line ) remains stationary 664. Tho operating point...on the a.c: lad line 4) also lies. 2) does not lie 8) is above the 4)none of the above 65. The disadvantage of voliage divider bias is that it has 41) high stability factor 2) low base current 2) many resistors 4) none of the above 66. Thermal runaway oceurs when... 4) collector is reverse biased 2) transistor is not biased 3) emitter is forward biased 4) junction capacitance Is high OSCILLATORS: 667. Inphaseshiftoscilators the frequency elements are 4) Lac 2) RAC 3) RAL 4) Crystal of d.c load line 4) the end points 2) the middle ELECTRICALENGG. _ in the ting point determingELECTRICALENGG. ELECTRONIC DEVICES & CIRCUITS 68. In transistor AC phase shift oscillator the minimum gain required by the amplitior 4) 50 2) 44-5 3) 29 4yo 69. InFET RC phase shift oscillator the minimum gain required by the amplifier 1) 60 2) 44-5 3) 29 4)0 70. In Hartley oscillator circuits no of inductor used . yt 2)2 3)3 4)4 71. In colpitts oscillator circult 1) Two inductors, one capaciter are used 2) Two indyctors two capacitors are used 3) One inductor, two capacitors are used 4) One inductor, one capacitor are used. 72. In Wien Bridge oscillator the phase introduced by feed back network 2) 180° 1) 0 3) 60° 4)270° EXERCISE - Ill 8) ‘(Typical Quest 1. Space-charge ortransition capacitance is observed in the diode when it is 1) Forward biased 2) Reverse biased 3) both a &b 4) none of the above The transition capacitances... proportional to voltage 1) directly 2) indirectly 3) not determined 4) none of the above 2. 3. Diffusion capacitarie ofthe diode! that of transition capacitance 4) more than 2) less than 3) equal to 4) none of the above 4. The diffusion capacitance. is directly proportional 10...» : 41) current 2)n 3) Vv, 4) none of the above Sy Zener break down occurs in a diode when the applied voltage is 1) above 6v 2) below 6v 8) equal to-10v 4) none of the above x Avalanche break down occurs in a diode when the applied voltage is 1) above 6v 2) beiow ev 3) equal to 5v 4) none of the above The Zener break down VOILge s..eee as temperature is increased 1) decreases 2) increases 8) remains constant 4) none of the above Avalanche break down voltage. as temperature Is increased 1) decreases 2) increases 3) remains constant 4) none of the above ee ‘S— Zener is used as 1) inverter 8) oscillator ) voltage regulator 4) none of the above 10. For an ideal diode the forward resistance .. and reverse biased resis- is tance is. 10,0 2) «0,0 3) Oo 4) 2,0 11. Ifthe reverse voltage across a Pn junction exceeds its break down voltage, then junetion. : 1) is destroyed 2) emits light 8) conduction takes place 4) none of the above 12. Reverse current is due to the movement ot. 1» eartiers accross the junc- tion. 1) minority 2) majority 8) both a & b 4) none of the above 18. A silicon diode has a saturation current of 0.1 PA at 20° c. Find the current when itis forward biased by 0.55v 1) 0.5 mA 2) 0.28 mA 8) 0.98 mA. 4) 0.81 mA 14, The forward voltage dacreas0s..ir.crvee for each 1°c rise in temp when the current is held constant. 4) 4mvo 2) 2.5mvc 3) Imire 4) none of the above 27 SriKrishnaveni Educational Academy, VJA.ELECTRONICDEVICES & CIRCUITS ELECTRICALENGG. $e 15. The concentration of impurity atoms in a tunnel diode Is 4) 1 part in 10% atoms 2) 1 part in 10° atoms. 3) 1 part in 105 atoms 4) none of the above 16. ifthe Pn junction is heavily doped, the break OWN. VOHAGE Willrnscsose 1) increase 2) decrease 3) remain constant 4) none of the above 17. Ina tunnel diode the thickness of depletion layer is 1) one-twentyeth the wave length of visible light 2) one-liftieth the wave length of visible light 3) same wave length as visible light 4) none of the above 18. In a tunnel diode the forward current is 1) sum of tunneling and Pn junction current 2) sum of majority & minority current 9) tunneling current 4) none of the above 18. Tunnel diode exhibits... resistance characteristic in forward bias between |, & 4 4) Positive 3) zero 2) negative 4) none of the above 20. Tunnet diodes are used 1} as @ high frequency oscillator 2) In pulse & digital circuits 3) as a very high speed switch 4) all of the above 21. The materials used for tunnel diode 1) Ge 2) Gallium arsenide. 8) both a &b 4) none of the above 22, Varactor is @ 1) non-linear resistor 2) variable tesistor 9) non-linear capacitor 4) non-linear inductor RECTIFIERS: 28. The max. rectifier efficiency of a full-wave rectifier is. 24, The ripple factor of a full-wave rectifier is... 1) 0.48 2) 1.21 3)2 4) 25 25. In a full wave rectifier If the input signal frequencyis 50 HZ, then outputhasa frequency of 2) 50 HZ 4) 100 HZ. 4) 200 HZ 9) 25 HZ 26. The Bridge rectifioris proferrable toanordinary two-diode full wave rectifier because 1) its uses. four diodes 2) transformer has no center-tap 3) needs much smaller transformer for the same output 4) it has higher safety factor 27. In full wave rectification, transformer is... 1) essential 2) centre tapped 3) both a & b 4) none 28. The output of a rectifier contains..... 4) ac. component 2) d.c. component 9) both a & b 4) none 29. The a.c. component in the output of a full Wave rectifior is.....tho d.c. component 1) equal to 2) morethan 8) lessthan 4) none |. The PIV of each diode in a bridge circuit is....dhat of equivalent centre - tap circuit. 31. The primary function of @ center-tapped transformer in a power supply 18 10..... 1) step up the Voltage 2) step down the Voltage 3) causes the diodes conduct alternately 4) none 32, For the same secondary voltage, the output voltage from a centre-tap circuit is....than that of bridge circuit. 1) twice 3) fourtimes. 2) thrice 4) one - halt Srl Krishnaveni Educational Academy, VIA 28.