CMOSAnal

ogCi
rcui
tDesi
gn
Assi
gnment–1(PART-
1)

Q.1 Inthe ci
rcui
tshownbelow Determi
ne,VDS,gm and r
o
.Assume VTH =0.
4V and
200μA
μnC = 2 ,λ=0. 1V-1,
W/L=20/
0.18.
ox V

Q.
2Determi
nehowt het
ransconductanceofaMOSFET(operat
ingi
nsatur
ati
on)changesIf,
(a)
W/Li
sdoubledbutI
Dremainsconstant.(b)VGS−VTHisdoubledbutI
Dremainsconstant
.(c)
I
Di edbutW/
sdoubl Lremainsconstant.
(d)IDi edbutVGS−VTHr
sdoubl emai
nsconstant.

Q. chI
3Sket XasafunctonofVXf
i ortheci
rcui
tsshownbelow.AssumeVXgoesfr
om 0toVDD
=1.
8V.Also,λ=0.Deter
mineatwhatv ueofVXt
al hedev
icechangesi
tsr
egi
onofoper
ati
on.
Q.
4Det
ermi
net
her
egi
onofoper
ati M1i
onof neachci
rcui
tshownbel
ow,

Q.5Calcul
atet
hebiascur
rentofM1inFi
g.6.23.AssumeμnCox=100μA/V2andVTH=0.4V,
VB =1Vand W/L=2/ 18I
0. fthegatev
olt
ageincreasesby10mV,whati
sthechangei
nthedr
ain
vol
tage?

Q.6 AMOSFETcar ri
esadrai
ncurrentof1mAwi t
hVDS=0. 5Vinsaturat
ion.Deter
minet
he
-
1
changeinIDifVDSri o1Vand λ=0.
sest 1V .Whatist
hedevi
ceout
putresi
stance?Assumi
ng
λisinv
ersel
ypropor
ti
onal
toL,cal
culat
echangeinIDandro
,i
fbot
hW andLar edoubled.

Q.
7I faMOSFETisbiasedatadraincurr
entof0. fμnCox=100μA/
5mA.I L=10andλ=
V2,W/
-
1
0.
1V .Cal
cul
atei
tssmallsi
gnal
parameters.

Q. fλ=0.
8 I 1V−1andW/ L=20/0.
18,constr
uctthesmal
l-
signal
modeloftheci
rcui
tshownbel
owanddet
ermineal
lthesmal
lsignal
par
ameter
s.
Q.
9 AnNMOSdev i
cewi
t 2V-1mustpr
hλ=0. ovi
deagm r
o
of20wi
thVDS=1.
5V.Det
ermi
net
he
r
equi
redv
alueofW/
LifI
D=0.5mA.

Q. fW/
10 I L=10/ 0.
18andλ=0,det
ermi
net D ofM1i
heVsdandI nci
rcui
tshownbel
ow.
AssumeμpCox=100μA/ VTH=-0.
V2, 4V

200μA
Not
e:I
frequi
red/Notspeci
fi
edi
npr em,AssumeμnCox=
obl (
forNMOS)
,
V2
100μA
μpCox= (orPMOS)andVTH =0.
f 4Vf
orNMOSdev
icesand−0.
4Vf
orPMOS
V2
devi
ces.