600V/90A/90 In one-package IGBT-IPM R series 6MBP50RA060 M43 & Features BMREID NAT FLT + IPMNG Y— REED 63/69 7 — + IGBTS 7 OT) RUSBARIRIRKELS & SRNR & BISMLO RR + AR MGIDROBRARO AAI & 2 ERM + Low power loss and soft switching + Compatible with existing IPM-N series packages + High performance and high reliability |GBT with overheating protection + Higher reliabilty because ofa big decrease in number of parts in builtin contol circuit WE CE Maximum ratings and characteristics @ BRAT Absolute maximum ratings (at To=25C unless otherwise specified) Tem ‘Symbol | Rating Unit Min. | Max eage Voc a wHeE TD) Vocwsuase) | 0 | S00 |v RAE GSH) Vse 200 [400 [v BU75- ty SME Ves 0 | 600 fv || av7eam [0c tc = 501A 7 ims lop. = [00 Ta v Duty=62.6% | = le = 50 [A SU7FRR RF Pe = [sew BanEE T = 50 OR RE Vee #1 o | 2 Vv RARE Vin *2 o [we v ADER tin = 7p ma 75 — LEE Van #3 0 [Wee Tv 7-2 ER SLE ia ee = 33 Tne Fig.1 Measurement of case temperature aaa sig Sas bh 7 — ABR Fig BH Tor =20 [100 fe HE (7 — 258) Viso_*5 = [aces [av WATE 7 Screw torque [ARATE Mounting (M5)_|__— 35 [Nem 88 Terminal (MS)] _— 35 [Nem Note: P.3 7117 7BEBE Reter to block hagram, page 3. STveg dd etd? b BaamcReL<7e0 1 Apply Vor beweenteminaiNe. ard LB and 2, 3 and 2 #2 Vind 2-0. $-4. 8-7. BB BD MFMCMEL TEL Dawd 3s van @-OMTMEMELT TEN +2 Apply Ve between terminal No.2 and I. $ and 4, and > +4 luuls, BRELVADLT REL, Sid Gas 7 oe wien eae aa 43. Apply Vas berween terminal No. ano 164 Apply lt terminal No.6 25. SOHDOHE sine wave 1 minute © BANE /N'7—B Electrical characteristics of power circuit (at To=T}=25C, Vec=15V) ‘fem ‘Symbol _—_| Condition Twin. [Typ | Max] Uni 1 | BU7s TS sme lees, Vee=600V = = f.0 Tima n [Bugs ay smanee Vee ini | tos50A. = =—[es [Vv y [r= Ree Ve SOA = = [a0 fv ‘A-5086MBP50RA060 BX IGBT-IPM —— ——— EO @ BRM / MAAK Electrical characteristics of control circuit (at To=T)=25°C, Veo=15V) Tem Symbol | Condition Min.—_| Typ] Wax | Unt P UES ER (1 ocr $sw=0~15kHz* Tc=.20~100C_ 3 = 18 mA aH eR leon fsw=O~ 15kHz* 10 7 65 mA (35889228) To=-20~100°C DALE MERE Minion) | ON 1.00, 4.35, 170] Vv 7 Vinorri | OFF 25| 1.60] 1.95 Vi Fin=20K0 = 30 | - |v Teo | Vocs0V, Iea0A [no [= ase Case temperature ERFIDA Tea =| =e IGBT Fy TORRES Tion surface of IGBT chips 150. 7 = ia EAT ISA Tt = |= [=e REARED EER INV loc Tj=125°C_Collector current 75, = > A WERE ABM Fig? Ht tooc | 25 = 70 = os BACRRLET RMSE Vu 11.0, eI 125 [Vv CAFTA Vi 02 [>| - [Tv PI-LEDREL TAL 15 z | — ms, HERMES Figs OE tse Tet = = 72 | us 75- ben Pana [iwes [i500 [9675 Po "Switching frequency ot IPM @ F4F3 1 74H Dynamic characteristics (at To-T)=125'C, Voce 15V) em [ Symbol_| Conattion Min We] Wax | Una X49 F > FWP GBT) Figs SH [ton Te=50A, Voo=300V os [= = fas toff = = 36 [as Rig FD TWAT FWD) te TF=50A, Voo=300V_ = = [a0 Tans NRRL : be ae = Fig.3 SGMRHR NEM (Isc) OH Detintion of tse AR RIOT NAHM (ido) OH Fig.2 Definition of OC delay time law INPUT Srl 244 F > FEN (ton, tol) OER Fig.4 Definition of switching time @ MAF Thermal characteristics (To=25C) Trem Symbor Te. Max [unt RE: 7 ARR inv iGeT__[ Rin io) = oss | cw Fwo [Ath Go) = 133 CW FoR 7 MRED NO FEAL Fath (ct) 0.05 = Cw @ #2 Recommendable value Tem Symbol__| Min Tye. Max Unit ‘aaRE ‘Voo 200. = 400) v ee EE Vee: 135 % 165, Vv IPM Af y > TR sw 7 = 20 Ka BOAT FIL Screw torque | HRFFBE Mounting (M5) | — 25) = 30) Nem EF Terminal (Ms) — 25) = 20) New -509E+ IGBT-IPM 6MBPSORA060 70771 Block diagram MONDE FR 7 me WE EEC. 2 8HOR 1 MOSSEL TRE vinz @- 4 geneeon ‘SIGST Fy THAR noros Pre-évers include following functions @nc 1 Shor circuit protection circuit 2 Ampltier for driver Undervottage protection circuit @ Overcurrent protection circuit ooo IGBT Chip overheating protection E @ ie 7 i 2 | ! Mi tiiheR (fA) Characteristics (Representative) @ 19% Control circuit 8 2s = q 7 5 3 10 15 Ey 3 {2s se Switching reqvency tSW (kH2) Power supply voltage Vee (V) BRRR—A1 FL TBA AALS MORE SRB Power supply current vs. Switching frequency Input signal threshold voltage vs. Power supply vollage A5106MBPS5ORA060 + IGBT-IPM @ 818088 Control circuit 1 S = 5 3 3 3 ' i : a a a a uncon emperatre T)(C) hncton temperature TH(C) ELE RRL LSE RERPRBE ATUL A-BSRER ‘Undervotiage vs, Junction temperature Undervotagehystersis vs. uncton temperature TeOH, TO, Te, TH vs. Vee 3 Bes} & Teh E a 57 7 as 5 Eas 5 ts Qa a ar ‘Power supply voltage Vcc (V) Power supply voltage Vec (V) PF — LAR —BRSE BMRB MRE —- BEBE ‘Alarm hod time vs, Powersupply voltage Overeating characteristics Teow To Toh. Ths. Vee @42N-3B inverter meuase Collector current le (A) 7 2 > 4 ColactorEmiter voltage Vee (V) Ccolector Emitter voltage Vee (V) ALIS BR—ILIS- LE y SBE DU 7S@R-IL IF Tey SMB Collector current vs. Collactor-Emitter voltage Collector current vs. Collector-Emitter vottage A511+ IGBT-IPM 6MBPS50RA060 @ 42 NK-4B Inverter den300V, Voce SV, Te2S den200V, Veen! SV, Tat25T TEE T Smitcing ime ton, toff (nsec) 0102039450670 oO 0 2030450708 Coleco current 1c (A) Collector curent_ Ic (A) AA FY PSB AL 7 9 BRE Rt y FL TM — AL 7 oR Switching time vs. Collector current Switching time vs. Collector current 3 Forward curent_Ie (A) 3 Y 2 3 4 a ) 0 Forward votiage VF (V) Forward curent_IF (A) Men BeE tt MOG BORER MERE Forward current vs, Forward voltage Reverse recovery characteristics tr, ler vs. Ie Neon SV.T}S 125%. 450 ‘Temal resistance Fah (0) (CW) Boor oor 7 1 °0 0000000050005 Fe0 Pulse wisth Pw (sec) Collector-Emiter votage Vee (V) BRR BAT PARSM EEE nt thermal resistance Trans Reverse biased sate operating area A5126MBPS50RA060 @+IGBT-IPM @ 4-588 Inverter g 3 8 & Collector power dissipation Pe (W) & Cobector power dissipation Pe (W) o 2% «0 60 80 100 120 140160 92040 6080 100120140160, Case temperature Te (C) Casetemperatwe Te (C) IGBT BA MRASE (1 Fy 7) FWD @ AEIRASHE (1 Fy 7) Power derating for IGBT (per device) Power derating for FWD (per device) Eden300V.Veeot SVTN2ST. 7 ‘Switching loss. Eon, Eolt, Ere (mJicycle) Switching less Eon, Eoll, Err (muleycle) 0 1020~« MSOC a 2030 4050708 Collector curent tc (A) Colectoreurent le (A) RAY FL TRR—ALT BBR AA FLFR ALT FBI ‘Switching loss vs. Collector current ‘Switching loss vs. Collector current loc (A) Overcurrent protection 204060800825 F40 Junction temperature T] (C) WUE RRE SRE Overcurrent protection vs. Junction temperature A-513+ IGBT-IPM 6MBPS50RA060 WSK Outline drawings, mm HB Mass: 4409 A514