_KEC SEMICONDUCTOR KDS184 KOREA ELECTRONICS €0,LTD. TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE, ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURE: + Small Package + Low Forward Voltage Vir0 QV (Typ. + Fast Reverse Recovery Time ns(Typ.) + Small Total Capacitance pF (Typ) MAXIMUM RATINGS (Ta=25° cHarac SYMBOL | RATING | UNIT Maximum (Peak) Reverse Voltage | View ® V Reverse Voltage Ve 30 V sews Maximum (Peak) Forward Current | Tea 300+ | mA _— Average Forward Current bo 100 =] ma Surge Current (10m) Irs oe [a Power Dissipation Pi 150 | mw Marking Junetion Temperature 1 wo |e lot Ne Storage Temperature Range Tar | -s5~150 |v 5 A Nowe Unit Rating, Total Rating“Unit Rating x 15 peewee lS PLECTRICAL CHARACTERISTICS (Ta=25%) SYMBOL ‘TEST CONDITION an. | typ. | max. ] unr Vow | hema, 0.60 Forward Voltage ve 1=10mA - for | - |v ve 1=100mA - | 0% | 120 Reverse Current Ie Vre80V os | ua Total Capacitance cr Vie0, f=IMHz o9 | 30 | or Reverse Recovery’ Time te 110m 16 | 40 | ns 1908, 6 15 Revision No 1 KEC 2KDS184 Ip - Ve IR - Vr z 3 * eo 5 E 10" 8 & 104 2 E z 10” 0 02 04 06 08 10 12 o 2 4 60 80 FORWARD VOLTAGE Vr (V) REVERSE VOLTAGE Vp (V) Cr - VR = q 20 = 100 ~ = 50 ge ~ B12 . g E 10 & 5 ge Bos 3 oa 2 2 go1 Bo Bos 01 03 1 3 10 30 100 § “or os 1 8 10 30 100 REVERSE VOLTAGE Vp (R) FORWARD CURRENT Ip (mA) Fig. 1. REVERSE RECOVERY TIME(trr) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01uF DUT WAVEFORM, o— ourpur SAMPLING OSCILLOScoPE _— ss § c (mx -500) Ik -wv— S&F 8 wT Ie bos it tre PULSE GENERATOR (Rour=500) 1908. 6.15 Revision No #1 KEC