TRANSISTOR EQUATIONS

n-type:
𝑊 𝑉 triode 𝑉𝐷𝑆 < 𝑉𝐺𝑆 − 𝑉𝑡ℎ 𝑉𝐺𝑆 > 𝑉𝑡ℎ
𝐼𝐷 = 𝜇 𝑛 𝐶𝑜𝑥 [(𝑉𝐺𝑆 − 𝑉𝑡ℎ − 𝐷𝑆 ) 𝑉𝐷𝑆 (1 + 𝜆𝑉𝐷𝑆 )]
𝐿 2

1 𝑊 saturation 𝑉𝐷𝑆 ≥ 𝑉𝐺𝑆 − 𝑉𝑡ℎ 𝑉𝐺𝑆 > 𝑉𝑡ℎ

𝐼𝐷 = 𝜇 𝑛 𝐶𝑜𝑥 (𝑉𝐺𝑆 − 𝑉𝑡ℎ )2 (1 + 𝜆𝑉𝐷𝑆 )
2 𝐿
𝑉𝑡ℎ = 𝑉𝑡ℎ0 + 𝛾 (√|2𝜙𝐹 + 𝑉𝑆𝐵 | − √|2𝜙𝐹 |)

p-type:
𝑊 𝑉 triode 𝑉𝐷𝑆 > 𝑉𝐺𝑆 − 𝑉𝑡ℎ 𝑉𝐺𝑆 < 𝑉𝑡ℎ
𝐼𝐷 = −𝜇 𝑝 𝐶𝑜𝑥 [(𝑉𝐺𝑆 − 𝑉𝑡ℎ − 𝐷𝑆 ) 𝑉𝐷𝑆 (1 − 𝜆𝑉𝐷𝑆 )]
𝐿 2

1 𝑊 saturation 𝑉𝐷𝑆 ≤ 𝑉𝐺𝑆 − 𝑉𝑡ℎ 𝑉𝐺𝑆 < 𝑉𝑡ℎ

𝐼𝐷 = − 𝜇 𝑝 𝐶𝑜𝑥 (𝑉𝐺𝑆 − 𝑉𝑡ℎ ) 2(1 − 𝜆𝑉𝐷𝑆 )
2 𝐿
𝑉𝑡ℎ = 𝑉𝑡ℎ0 − 𝛾 (√|2𝜙𝐹 − 𝑉𝑆𝐵 | − √|2𝜙𝐹 |)

Small signal parameters of MOSFETS in Saturation:

NMOS PMOS
Transconductance 𝑊 𝑊
𝑔𝑚 = 𝜇 𝑛 𝐶𝑜𝑥 (𝑉𝐺𝑆 − 𝑉𝑡ℎ )(1 + 𝜆𝑉𝐷𝑆 ) 𝑔𝑚 = −𝜇 𝑝 𝐶𝑜𝑥 (𝑉𝐺𝑆 − 𝑉𝑡ℎ )(1 − 𝜆𝑉𝐷𝑆 )
𝐿 𝐿
𝑊 𝑊
𝑔𝑚 ≈ √ 2𝜇𝑛 𝐶𝑜𝑥 |𝐼 | 𝑔𝑚 ≈ √ 2𝜇𝑛 𝐶𝑜𝑥 |𝐼 |
𝐿 𝐷 𝐿 𝐷
Bulk 𝑔𝑚 𝛾 𝑔𝑚 𝛾
𝑔𝑚𝑏 = 𝑔𝑚𝑏 =
transconductance 2√|2𝜙𝐹 + 𝑉𝑆𝐵 | 2√|2𝜙𝐹 − 𝑉𝑆𝐵 |

Drain resistance 1 1
𝑟𝑜 = 𝑟𝑜 =
𝜆𝐼𝐷 𝜆𝐼𝐷