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VOLTAGE-CONTROLLED OSCILLATORS
A Thesis
By
Anu Chakravarty, B. E.
*****
2010
Thesis Committee:
Professor Mohammed Ismail, Adviser
Anu Chakravarty
2010
ABSTRACT
phase-locked loops (PLLs) for a variety of applications such as high speed digital
rience large supply noise variations due to digital switching currents. This degrades
Supply noise is a major concern in ring oscillators in particular, since the frequency
This thesis presents a novel power supply insensitive voltage controlled ring oscil-
lators. This thesis also discusses some previously adopted VCO buffer stage designs
implemented to achieve high supply noise rejection, and compares their results with
Based on the concepts developed in this thesis, a differential ring oscillator was
ply fluctuation. The VCO operates from 236.66 MHz to 373.33 MHz, and displays
ii
This is dedicated to my family and friends
iii
ACKNOWLEDGMENTS
I would like to acknowledge the contributions of people who were very helpful and
research at the Analog VLSI Laboratory. I am grateful to him for providing me con-
concentrate all my efforts on this work and has provided me constant encouragement
and confidence throughout my research. He has always been there to clear my doubts
A special thanks to Bou-Sleiman at the Analog VLSI Lab for his continued support
I would like to thank my friends at Columbus with whom I have had many in-
teresting discussions and who have made my time at the department enjoyable. I
would like to thank Sarang Vadnerkar, Harsha, Mansi, Bhalchandra and Subhash
in particular for their constant support and encouragement. It has been a pleasure
iv
Finally, I would like to thank my family, my mother, my father and my sister for
their continued love and support. I am really grateful to them for providing me a
good home and for encouraging me to study as far as I can. I could not have asked
for better parents and am really thankful to them for never losing confidence in me,
v
VITA
FIELDS OF STUDY
Studies in Analog and Mixed Signal Circuit Design : Prof. Mohammed Ismail
vi
TABLE OF CONTENTS
Page
Abstract . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii
Dedication . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii
Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv
Vita . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vi
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . x
Chapters:
1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Previous Work . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2.1 Maneatis Delay Cell . . . . . . . . . . . . . . . . . . . . . . 5
1.2.2 Self-Calibration . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.3 Thesis Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2. Oscillator Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
vii
3. Previous Work . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Appendices:
Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
viii
LIST OF TABLES
Table Page
ix
LIST OF FIGURES
Figure Page
1.3 LC-Tank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.4 LC-VCO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3.1 Differential buffer stage with MOS symmetric load elements [1], [2], [3] 18
3.2 Symmetric load I-V characteristics, dashed lines show the effective re-
sistance of the loads and highlights the symmetry of the I-V charac-
teristics [1] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.3 Self-biased replica-feedback current source bias circuit for the differen-
tial buffer stage [1] . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
x
3.4 Maneatis VCO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
xi
4.12 LPF - Effect of varying RB and CB . . . . . . . . . . . . . . . . . . . 41
R1X
5.1 Resistor tun-ability (KF V SU P = R0
) . . . . . . . . . . . . . . . . . . 55
xii
CHAPTER 1
INTRODUCTION
This thesis focuses on the design and simulation of a power supply insensitive
voltage-controlled ring oscillator. The first section presents the reasons to develop
a ring VCO that has high power supply rejection ratio (PSRR). It discusses the
difference between ring oscillators and LC-VCOs, which have better supply noise
rejection by definition. Section 1.2 discusses some of the relevant, existing research.
Some of the techniques in this thesis are derived from the works mentioned here. The
1.1 Motivation
plications because of their ability to generate delays with very high precision at high
operating frequencies. They are extensively used in phase-locked loops (PLLs)in high
performance applications such as clock recovery, clock generation and frequency syn-
thesis. In such applications the VCOs jitter performance can impact the output clocks
With the scaling of CMOS technology, and enhanced levels of integration more
noise is coupled from the switching of digital circuits. This noise translates to jitter
1
at the the output and directly impacts the signal purity [5], [6]. Consequently, the
design of VCOs that are noise tolerant is vital. In particular, for ring VCOs, supply
noise is a major design concern as the oscillation frequency of a ring VCO is highly
dependent on the supply voltage. This thesis, therefore, is the design of a ring VCO
Two principal topologies for the modern monolithic VCOs exist. They are the
ring oscillator and LC-oscillator topologies [7], [8]. The ring oscillator, is composed
of a ring of inverters with a net inversion around the loop as shown in Figure 1-
oscillation is a function of the delay through each stage and the number of stages.
To change the oscillation frequency the propagation delay of each stage could be
adjusted in a number of ways, such as varying the current through each stage of
varying the capacitative load at the output of each stage. The ring oscillator could
2
also be implemented using differential signaling by flipping the output of the last
stage as it is fed back to the input of the first stage, as shown in Figure 1-2. In this
The other class of VCOs, the LC-oscillator,is a subclass of resonant oscillators. The
circuit oscillates at the resonant frequency of the inductor and the capacitor, ωo =
√1 . In an ideal LC-tank with no resistive losses, the inductor and capacitor oscillate
LC
active devices are used to produce negative resistance to cancel out any parasitic losses
in the tank, as shown in Figure 1-3. A simple differential LC-VCO is shown in Figure
1-4.
3
Figure 1.4: LC-VCO
The LC-tank inherently has excellent supply noise rejection since the frequency
of oscillation is a function of only the values pf the inductor ans the capacitor. These
values do no vary with supply fluctuations hence the frequency of oscillation is rel-
atively stable. Also, the LC-tank inherently filters out frequencies away from the
resonant peak, thus improving phase noise performance. However the tuning range of
LC-VCOs is limited compared to the ring oscillator since tuning is achieved by using
4
1.2 Previous Work
To suppress the change in frequency of a ring VCO with supply noise, many
methods have been adopted. Some of them use differential structures [9], voltage
regulators [10] and calibration techniques [4]. Others use compensation techniques to
cancel the VCOs intrinsic positive supply sensitivity with additional negative supply
This thesis, draws comparison between the new proposed approach and the exist-
ing approaches by Maneatis [1], [2] and Wilson and Moon [4].
The Maneatis delay cell [1], [2], [3] as shown in Figure 1-5 relies on symmetric
loads and dynamic biasing to achieve VCOs with superior power supply rejection
and wide tuning range. The concept behind using symmetric loads is that the load
5
elements should ideally have linear I-V characteristics which helps provide differential-
mode resistance that is independent of common-mode voltage . Since the delay of the
buffer stage is dependent only on the differential mode resistance, it is not affected
by the common-mode disturbances resulting from the supply noise. However since
adjustable resistive loads made with real MOS devices do not maintain linearity
while generating wide frequency range, Maneatis proposes the concept of symmetric
loads which have symmetric I-V characteristics. This symmetric characteristics helps
inhibit the conversion of common-mode noise into differential-mode noise, and hence
achieves high supply noise rejection. Maneatis also uses the concept of replica-bias
to vary the current in the buffer delay stage to provide correct symmetric load swing
limits . The replica-bias also helps counteract the effect of finite output impedance
6
of the NMOS current tail source to achieve high supply noise rejection as shown in
Figure 1-6.
1.2.2 Self-Calibration
Wilson and Moon [4] employ the concept of self-calibration techniques to design
in Figure 1-7, that helps cover wide range of output frequencies while keeping a very
low control voltage to output frequency gain. This is the sub-banding approach to
achieve lower VCO gain that has been proposed for the new architecture as well,
to achieve lower Kvco, and hence lower jitter at the output. The self-calibration
self-calibration is also incorporated in this thesis as part of future work. The concepts
of variable resistive loads to achieve better supply noise rejection and self-calibration
to overcome process variations are used in this thesis to develop a novel power supply
7
The Maneatis and Wilson and Moon, architectures are further discussed in detail
in chapter 3.
The next chapter deals with general oscillator theory, explaining different oscillator
The second chapter describes the proposed novel voltage-controlled oscillator ar-
Chapter three discusses the Maneatis architecture, its variations and the Wilson
Chapter four compares the simulation results of the new VCO with those achieved
Finally, Chapter 5 reviews the principal contributions of this thesis and includes
a number of suggestions for future work using the ideas presented herein.
8
CHAPTER 2
OSCILLATOR THEORY
the heterodyne principle, wherein they effect frequency translation by multiplying the
oscillators signal with other input signals. Since then oscillators have been an integral
part of many electronic systems. Their applications range from clock generation to
carrier synthesis, and are one of the most challenging blocks in the design of a PLL.
This theoretical chapter deals with the design of CMOS oscillators, more specifi-
cally voltage-controlled oscillators (VCOs) [7], [8]. It discusses the criteria that must
be fulfilled by a circuit to produce oscillations, introduces the two main types of os-
cillators, the ring oscillator and the LC-oscillator. It further discusses the methods
of varying the oscillators output frequency and finally lists some of the important
possible only if the overall feedback becomes positive in an amplifier. Thus, the
9
behavior of oscillators can be modeled as a feedback system as shown in Figure 2-
feedback network that is connected from the output of the amplifier to its input.
The two conditions that are necessary but not sufficient to make a circuit oscillate
are defined as the ”Barkhausen Criteria”. When using the notations of the model in
Aβ = 1 (2.1)
The criteria can be divided into two parts, i.e, the magnitude criterion and the phase
criterion.
The magnitude criterion for oscillation states that the gain Aβ of the oscillator
loop must be equal to one during standard operation. In practice the loop gain has
to be larger than one for the oscillator to begin to oscillate and for the oscillation am-
plitude to grow. The amplitude will eventually saturate due to device nonlinearities,
reducing the loop gain to one and providing a signal with stable amplitude.
10
2.1.2 Phase Criterion
The phase criterion for oscillation states that the phase shift of the oscillator loop
must be zero or a multiple of 2π. This means that the signals with the same phase
are summed at some point in the oscillator. If the phase shift was an odd multiple of
π, then the signals would have opposite phases and would cancel each other out. In
Ring Oscillators are a subset of the class of delay based oscillators wherein one
consists of a number of gain stages in a loop. Figure 2-2 shows the schematic of a
three stage inverter ring oscillator. The oscillation frequency fo of the oscillator can
11
be calculated as:
1
fo = (2.2)
3(T1 + T2 )
where T1 is the delay of the rising edge and T2 is the delay of the falling edge. The
delay varies with change in bias current or supply voltage and hence changes the
frequency of oscillation.
based oscillators. However, since delay based oscillators do not need an inductor to
operate, they can be implemented using small chip area. Ring oscillators also have
though, i.e, they are highly susceptive to supply noise, which effects the delay of each
Thus, in thesis, we discuss a new approach to build the ring oscillator such that it
is completely insensitive to power supply noise. This architecture uses the differential
implementation of delay stages, which help cancel out common-mode noise. Differen-
tial implementations also may use even number of delay cells by simply configuring
one cell such that it does not invert. This flexibility demonstrates another advantage
2.2.2 LC-Oscillators
LC-oscillator belongs to the class of resonator based oscillators, which are the most
compensates for the loss in the resonance circuit and keeps a sustained oscillator.
12
Figure 2-3 shows an LC-VCO. Due to the differential architecture and relatively
good phase noise it is one of the most popular oscillator configurations used in fully
parts, the passive LC tank which determines the frequency of oscillation and the
active devices that compensate the loss in the tank. The LC tank contains an inductor
(L) and capacitor (C). The oscillator will oscillate at a frequency where the reactance
1
fo = √ (2.3)
LC
In order to vary the frequency of oscillation, the capacitor is often implemented using a
13
or a combination of both. The other ways of tuning the frequency are varying the
The LC-VCO is highly insensitive to supply noise fluctuations since the frequency
develop delay stage architectures for ring VCOs such that the oscillation frequency is
Applications such as clock recovery and clock synthesis, require the oscillators to
some control input, usually voltage. This voltage could be for example the output of
the loop filter in an analog PLL. In an ideal voltage-controlled oscillator, the output
14
the ”gain” or ”sensitivity” of the circuit (expresses in rad/s/V). The achievable range,
are discussed below. These parameters help select the best oscillator for a particular
application.
Oscillation frequency
as the frequency at which the main peak in the oscillator’s output spectrum is located.
The tuning range of an oscillator is defined as the distance between the lowest
The tuning voltage(or current) range refers to the range of acceptable voltages (or
oscillators output frequency as the tuning voltage(or current) is swept through the
15
Phase noise
the output signal power at a certain offset fm from the carrier frequency f0 and the
power of the carrier, both within a 1-Hz bandwidth. It is usually given in dBc/Hz.
P (fm )
L(fm ) = 10log( ) (2.6)
P (f0 )
Pushing figure
The pushing figure of an oscillator gives the dependence of the output frequency
∆f
P ushing − f igure = (2.7)
VSU P max − VSU P min
Pulling Figure
The pulling figure indicates how dependent the oscillator’s output frequency is on
∆f
P ulling − f igure = (2.8)
RLOADmax − RLOADmin
16
CHAPTER 3
PREVIOUS WORK
ential buffer stage with symmetric load elements and self-biased replica feedback, to
have high supply noise immunity, while operating at low supply voltages. In this ar-
chitecture, digital calibration is not employed to achieve supply rejection, unlike the
architecture proposed in this thesis in chapter 3. The concept is that, high supply re-
jection can be achieved with high output impedances. This can be done by cascoding
the load impedances in the delay stages. However, since cascoding is incompatible
with low-voltage circuit design, Maneatis proposes the use of a current source bias
circuit, thus enabling the buffer stages to have high supply rejection without cascod-
ing. Symmetric load elements are also used in the buffer stages to enable supply noise
cancellation.
The buffer stage used, is based on an NMOS source-coupled pair with symmetric
load elements and a dynamically biased NMOS current source as shown in Figure
17
Figure 3.1: Differential buffer stage with MOS symmetric load elements [1], [2], [3]
3-1. The bias voltage of the simple NMOS cell continuously adjusts itself to provide
a supply independent bias current. Since, the output swing is referenced to the top
supply, the current source helps isolate the buffer from the supply and hence, helps
The load elements are composed of symmetric loads i.e, a diode connected PMOS
device in shunt with an equally sized biased PMOS device. These loads are called
symmetric loads because their I-V characteristics is symmetric about the center of the
voltage swing as shown in Figure 3-2. The control voltage, VCT RL biases the PMOS
device and helps generate the bias voltage for the NMOS current source and hence
The current source bias circuit as shown in Figure 3-3, helps set the current
through a simple NMOS current source in the buffer delay stage to provide the correct
18
Figure 3.2: Symmetric load I-V characteristics, dashed lines show the effective resis-
tance of the loads and highlights the symmetry of the I-V characteristics [1]
symmetric load swing limits and also helps adjust the NMOS current source bias so
that the current is held constant and independent of supply voltage. The current
source bias circuit uses replica of half the buffer stage and a single-stage differential
amplifier. The amplifier adjusts the current output of the NMOS current source so
that the voltage at the output of the replicated load element is equal to the control
voltage. This helps set the correct swing limits for the symmetric load.
3.1.1 Implementation
The maneatis delay cell with symmetric loads and replica-feedback bias generator
was implemented in cadence 130-nm. The VCO circuit was modified by shorting the
differential pair tail nodes of the delay cells. This enables their tail node voltage to be
more or less constant and closer to that generated by the bias generator. Simplified
schematic of the voltage-controlled oscillator is shown in this section Figure 3-4, and
19
Figure 3.3: Self-biased replica-feedback current source bias circuit for the differential
buffer stage [1]
The self-calibration technique used by Wilson and Moon [4] enables the design
frequencies for a limited range of input voltage, the gain of the VCO is high. This
covers a wide range of frequencies while keeping a low control voltage to output
frequency gain (KV CO ). This helps reduce the phase noise and output jitter consid-
erably.
The digital word is generated using a self-calibration algorithm. The process vari-
ations are also compensated for by the self-calibration technique. This sub-banding
20
Figure 3.4: Maneatis VCO
21
technique can also be incorporated in the proposed design to reduce th oscillator gain
(IX) and current-controlled oscillator (ICO) as shown in Figure 3-5. The VCOs L-
bit programmability is attained by the current multiplier, which controls the current
flowing into the the ICO. The operating range of the VCO is distributed into 2L
modes. This concept is illustrated in Figure 3-6. One of the operating modes is
chosen using the L-bit control word depending on the desired frequency of operation.
This results in a small output frequency to control voltage transfer function and thus
22
Figure 3.6: 2L operating modes of VCO [4]
3.2.2 Implementation
The V-I converter, current multiplier and ICO were implemented in cadence 130-
nm, and a five bit control word was used to provide sub-banding. Simplified schemat-
ics of these blocks are shown in this section, and the full schematics can be shown in
Appendix-A. The complete block diagram of the VCO is shown in Figure 3-7. The
V-I Converter
shown in Figure 3-8. One side of each of the differential pairs is connected VRF which
is equal to half the supply voltage. The other transistor’s gate is connected to VRF or
VLF , based on the output of the comparator. The current from the two pairs depends
23
Figure 3.7: Voltage-controlled oscillator - Wilson and Moon
24
on the voltages VRF or VLF , and finally the summation of the two currents is applied
Current Multiplier
in Figure 3-9. The control word used is five bits. The maximum current output of
ICO
The ICO is implemented using three delay stages in cascade. The first stage also
consists of a half-replica buffer to generate the control voltage VCT RL , applied to the
25
Figure 3.9: Current multiplier
gates of the PMOS loads of the following delay stages. The circuit diagram for the
A five bit control word was used to generate 32 operating modes. The multiplied
current for each of these modes was generated using the current multiplier and the
resulting frequency of operation was measured with varying control voltage VCT RL .
VCT RL was varied from 0 to 1.2 volts and the resulting oscillator gain was calculated
for each operating mode. Without sub-banding the KV CO of the VCO would have
been (5.618 GHz - 2.9586 GHz )/1.2 Volts , i.e, 2.216 GHz/V. However, by using the
sub-banding technique the KV CO has been reduced to a few hundred megahertz. This
reduction in the oscillation gain helps reduce the output jitter and reduces the phase
noise of the VCO. The results with sub-banding are shown in the following excel sheet
Figure 3-12. The effect of supply noise on frequency was also reduced considerably,
26
Figure 3.10: ICO - delay stage 1
27
L Overlap Percentage Percentage
(Multi Imin Imax Vmax Fmax-Fmin Diff Max Overlap Upper Overlap diff Overlap Lower KVCO
plier) Vmin (uA) Fmin (GHz) Fmax (GHz) (uA) (V) (GHz) Side End (%) Min side End (%) (MHz/V)
1 0 25 0.9921 1.1403 30 1.2 0.1482 no overlap 123.4895
2 0 50 1.5898 1.7794 60 1.2 0.1895 no overlap no overlap 157.9453
3 0 75 2.0202 2.2371 90 1.2 0.2169 no overlap no overlap 180.7787
4 0 100 2.3810 2.6110 120 1.2 0.2300 no overlap no overlap 191.6781
5 0 125 2.6810 2.9326 150 1.2 0.2516 no overlap no overlap 209.6551
6 0 150 2.9586 3.2258 180 1.2 0.2672 no overlap no overlap 222.6888
7 0 175 3.1746 3.4843 210 1.2 0.3097 0.2585 83.4677 0.2160 80.8390 258.0978
8 0 200 3.3784 3.6630 240 1.2 0.2846 0.1787 62.7784 0.2038 65.7939 237.1877
9 0 225 3.5714 3.8610 270 1.2 0.2896 0.1980 68.3761 0.1931 67.8261 241.3127
10 0 250 3.7313 4.0323 300 1.2 0.3009 0.1713 56.9112 0.1599 55.2239 250.7623
11 0 275 3.8911 4.2017 330 1.2 0.3106 0.1694 54.5416 0.1597 53.0739 258.8584
12 0 300 4.0486 4.3668 360 1.2 0.3182 0.1651 51.8908 0.1575 50.7138 265.1910
13 0 325 4.1841 4.4843 390 1.2 0.3002 0.1175 39.1376 0.1355 42.5848 250.1704
14 0 350 4.3103 4.6083 420 1.2 0.2980 0.1240 41.6143 0.1262 42.0528 248.2918
28
15 0 375 4.4248 4.7170 450 1.2 0.2922 0.1087 37.1955 0.1144 38.4071 243.5020
16 0 400 4.5249 4.8077 480 1.2 0.2828 0.0907 32.0755 0.1001 34.2599 235.6712
17 0 425 4.6296 4.9020 510 1.2 0.2723 0.0943 34.6154 0.1047 37.0370 226.9426
18 0 450 4.7393 4.9505 540 1.2 0.2112 0.0485 22.9847 0.1097 40.2844 175.9655
19 0 475 4.8077 5.0505 570 1.2 0.2428 0.1000 41.1881 0.0684 32.3718 202.3440
20 0 500 4.8544 5.0505 600 1.2 0.1961 0.0000 0.0000 0.0467 19.2235 163.4464
21 0 525 4.9505 5.1282 630 1.2 0.1777 0.0777 43.7229 0.0961 49.0098 148.0917
22 0 550 5.0000 5.1813 660 1.2 0.1813 0.0531 29.3040 0.0495 27.8571 151.1226
23 0 575 5.0251 5.2356 690 1.2 0.2105 0.0543 25.7772 0.0251 13.8550 175.3971
24 0 600 5.0761 5.3191 720 1.2 0.2430 0.0835 34.3805 0.0510 24.2386 202.5057
25 0 625 5.1282 5.3476 750 1.2 0.2194 0.0284 12.9654 0.0521 21.4245 182.8237
26 0 650 5.1813 5.4054 780 1.2 0.2241 0.0578 25.8021 0.0531 24.2228 186.7152
27 0 675 5.2033 5.4054 810 1.2 0.2021 0.0000 0.0000 0.0220 9.8127 168.3934
28 0 700 5.2632 5.4945 840 1.2 0.2313 0.0891 38.5135 0.0598 29.6056 192.7897
29 0 725 5.3191 5.5249 870 1.2 0.2057 0.0304 14.7567 0.0560 24.2021 171.4275
30 0 750 5.3191 5.5249 900 1.2 0.2057 0.0000 0.0000 0.0000 0.0000 171.4275
29
CHAPTER 4
The VCO, with the overall block diagram as shown in Figure 4-1, is composed
of the voltage-controlled oscillator block, the bias voltage generation block and the
digital calibration block. The VCO, a ring oscillator, consists of three differential
delay stages connected in a loop. The output of each delay stage is followed by
a capacitor and a resistor before feeding the output to the input of the next delay
stage, as shown in Figure 4-2. The capacitor is used to remove the DC from the output
and the resistor is used to fix the DC of the output to 0.6 volts. This ensures that
30
Figure 4.2: Delay stages followed by RC
variation in the common-mode value of the output, with supply voltage fluctuations,
does not effect the DC value of the input of the next stage. The capacitor and resistor
values are chosen very carefully, to make sure that they do not attenuate the output
The concept is that the slope KF V SU P , i.e, the maximum variation in oscillation
frequency with respect to the worst case variation in supply volatge needs to be
measured and fed into the digital calibration block at VCO start-up. Next the control
voltage VCT RL , for example the output voltage of the loop filter in a PLL, is added
to the VREF voltage in the VBIAS Generation block. VBIAS is generated in this block,
where, VSU P , is the varying supply voltage. The derivation of this equation is dis-
cussed in detail in section 4.2. VBIAS , the ”tuning voltage”, is then used to vary the
The first section describes the simple VCO core, with VBIAS as the voltage input
and FOU T as the output oscillation frequency. Section 4.2 presents the simulation
31
curves which lead to the derivation of equation (4.1). Section 4.3 discusses the cal-
ibration block in detail. Section 4.4 discusses another possible architecture for the
VCO. Finally, the simulation results are presented and discussed in Section 4.5. Some
of the ideas for the implementation of the calibration and bias generation blocks are
The VCO is a ring oscillator and consists of three delay stages connected in a
loop. In the preliminary design the delay stage was implemented in the form of
degeneration resistance RN as shown in the figure 4-3. The complete VCO diagram
32
Figure 4.4: Three Stage Ring Oscillator
33
However, the frequency of oscillation varies with change in supply voltage. This
happens due to the change in current through the delay stage with supply variation.
Therefore, an additional input is required to tune the circuit to negate the effect of
To this effect, we vary the resistance RP to make sure that the current flowing
through the delay stage in independent of supply fluctuation. Thus, the load resis-
tance RN is modeled as a PMOS with a voltage control VBIAS applied at its gate, as
in Figure 4-6.
34
Figure 4.6: Three Stage Ring Oscillator
35
Since the current through a MOSFET in saturation is:
1 W
ID = µCox (VGS − Vth )2 (4.2)
2 L
Thus, if VBIAS biases the gate voltage of the PMOS such that VGS remains con-
stant, the current through the delay stage would remain constant, making the oscil-
lation frequency, FOU T supply insensitive. The bias voltage follows a linear pattern
with supply variation as shown in Section 4.2. This helps formulate the effect of
supply fluctuation on the VCO output frequency in the form of the linear equation
(4.1).
The following figure and table show the effect of variation in frequency when the
supply is varied from 1.1 volts to 1.3 volts in linear steps of 0.02 volts, while VBIAS
is fixed at 0 volts. To negate this effect the bias generation and digital calibration
Figure 4.7: Effect of variation in supply voltage @ fixed VBIAS - Frequency spectrum
(DFT using hamming window) @ VBIAS = 0 V,
36
VSU P (V) 1.10 1.12 1.14 1.16 1.18 1.20
Freq (MHz) 373.33 381.4 390.1 400 411.5 423.33
blocks are introduced. These blocks help vary the VBIAS with variation in supply
and hence maintain fixed oscillation frequency, thus enabling the design of the novel
power supply insensitive VCO. These blocks are discussed in detail in the following
itor and resistor as shown in Figure 4-8. The capacitor and resistor are introduced
Figure 4.8: Delay stage followed by resistor and capacitor (Filter effect)
37
to remove the DC component of the output signal of the delay stage, and DC bias
it to 0.6 volts before it is fed into the input of the following stage. The values of
capacitor and resistor are calculated with careful analysis. The two effects that need
to be taken into consideration while deciding these values are explained below.
4.2.1 Path from the output of the first stage to the input of
the second stage:
When following this path, the capacitor CB and resistor RB act like a high-pass
Filter (HPF), as shown below in Figure 4-9. The transfer function of this filter is
VOU T sCB RB
= (4.3)
VIN 1 + sRB (CB + Cgmos )
The VOU T versus VIN characteristics with varying resistor and capacitor values are
plotted as shown in Figure 4-10. From the plot, it can be seen that if R1 and C1
are too low then the output signal gets completely attenuated, and the VCO stops
oscillating.
38
Figure 4.10: HPF - Effect of varying RB and CB
39
4.2.2 Path from the supply to the input of the delay stage:
When following this path, the resistor RB and capacitor CB act like a low-pass
filter (LPF) as shown in Figure 4-11. The transfer function of this filter is given in
equation (4.4). A step input was applied at the supply and the transient response at
the output was plotted, for varying resistor and capacitor values, as shown in Figure
4-12. From the plot it can be seen that, if the resistance and capacitance are too
high it takes longer for the DC of the output voltage to settle at 0.6 volts, since the
VOU T 1
= (4.4)
VSU P 1 + sRB (CB + Cgmos )
Thus taking the two effects into consideration the resistor value RB was fixed at 10
40
Figure 4.12: LPF - Effect of varying RB and CB
41
4.3 Bias Parameters
The complete schematic of the VCO core, with VBIAS as voltage input and FOU T
as the output oscillation frequency is presented in Figure 4-6. The bias values of the
RB 10KΩ
RN 100Ω
CB 100f F
CN 20f F
CP 20f F
WM 1,P 2,P 3 10µm
WM 4,P 5,P 6 10µm
WP 1,P 2,P 3 5µm
WP 4,P 5,P 6 5µm
LM 1,P 2,P 3 130ηm
LM 4,P 5,P 6 130ηm
LP 1,P 2,P 3 130ηm
LP 4,P 5,P 6 130ηm
The bias generation block is used to generate the voltage VBIAS that controls the
gate of the PMOS, and thus varies the load resistance. The resistance is varied such
that the current through the delay stage remains fixed, even when the supply voltage
fluctuates. The bias voltage VBIAS was varied, along with the supply voltage and the
simulated results are enlisted in Table 4-3, as shown below. These values were then
plotted with VBIAS as y axis, and VSU P as x-axis, as shown in Figure 4-13.
42
VSU P 1.1 V 1.15 V 1.2 V 1.25 V 1.3 V VCT RL mV freq (MHz)
0 26.5 60 86.5 116 0 373.33
50 80 110 140 170 50 336.6
100 130 160 190 220 100 310
VBIAS (mV) 150 180 210 240 270 150 286.66
200 230 260 290 320 200 266.67
250 280 310 340 370 250 250
310 330 360 390 420 310 236.66
43
VCT RL , the voltage from the output of the loop filter, enables the VCO to change
the frequency of oscillation, i.e, it enables the VCO to jump from one frequency curve
to the other as shown in the plot. As VCT RL increases, the frequency of oscillation of
the VCO decreases. The supply voltage VSU P was varied from 1.1 volts to 1.2 volts
It can be seen from the above plot that, the curves are linear. This means that the
increase in δVBIAS . Thus, a linear relationship can be derived between VBIAS , VDD −
VREF ; the difference in supply voltage from the reference voltage VREF , KF V SU P and
VCT RL .
4.4.1 Derivation
y = mx + b
where m and b are designate constants. The constant m determines the slope or
gradient of the line, and the constant term b determines the point at which the line
The above linear curves, can be defined by a similar linear equation where,
b = VCT RL , (4.5)
m = KF V SU P , (4.6)
y = VBIAS , (4.7)
44
From the above plotted curves, the slope KF V SU P is calculated to be 0.6 V/V. The
reference voltage VREF was fixed at 1.1 volts. Hence, the equation defining the above
4.4.2 Implementation
The above equation was implemented using an opamp with closed loop gain
0.6V /V and an open loop gain of 10,000. The circuit is presented in Figure 4-14.
where,
R1 = R5 = 600Ω,
R2 = R3 = 1KΩ,
R4 = R6 = 1KΩ,
45
4.5 Digital Calibration Block
The digital calibration block as shown in Figure 4-15 is used to find the value of
KF V SU P . After the VCO is powered up, the input VREF is swept from 0.9 volts to
1.1 volts in linear steps of 0.1 volts, the supply voltage VSU P is kept constant at 1.1
volts, and the control voltage input VCT RL is kept fixed at 0 volts. Firstly, VREF is
fixed at 1.1 volts, thus generating a bias voltage VBIAS equal to 0 volts. Then the
Next, VREF is changed to 1.0 volts and the same process is repeated. The frequency
of oscillation is measured. However, since this frequency from the one obtained when
VREF was 1.1 volts, the resistor in the opamp is varied till the time the oscillation
The same steps are repeated for VREF equal to 0.9 volts. Finally, the KF V SU P
is measured by divided the value of the varied resistor by 1000, as explained in the
following eqautions.
The above discussed steps are presented in the form of a digital calibration algo-
46
Figure 4.16: Digital Calibration Algorithm
47
The opamp with resistor R1, R2, R3, R4, R5 and R6 is shown below, in Figure
if, R1 = R6 = R (4.11)
and, R2 = R3 = R4 = R5 = R0 (4.12)
R
VOU T = VCT RL + (VSU P − VREF ) (4.13)
R0
R
T hus, KF V SU P = (4.14)
R0
If, R0 = 1000Ω (4.15)
R
KF V SU P = (4.16)
1000
48
4.6 Simulation Results
mented in cadence 130-µ m CMOS technology. The bias control voltage was varied
along with supply variation, according to the proposed bias voltage generation equa-
tion 4.1. The supply voltage was varied from 1.1 volts to 1.3 volts in steps of 0.05
49
The frequency of each of the above waveforms in the plot was calculated, and is
Figure 4.19: Frequency spectrum (DFT using hamming window) @ VCT RL = 50mV
negligible.
50
4.6.2 Simulation @ VCT RL = 200 mV
Figure 4.20: Frequency spectrum (DFT using hamming window) @ VCT RL = 50mV
negligible.
51
4.7 Conclusion
52
CHAPTER 5
This chapter summarizes the design and results of the voltage-controlled oscillator.
It then presents some future extensions using the ideas presented in this thesis. In
the end, the major contributions of the presented work are highlighted.
This thesis presented a novel architecture for the design of a ring voltage-controlled
oscillator based on a series of coupled differential delay stages that can provide better
supply noise immunity. VCOs are very critical components in a PLL, and are a
major contributor of output jitter. They experience large supply noise because of
digital switching activities , impact the clock’s timing jitter and thus limit system
performance.
In particular, for ring VCOs, supply noise is a major design concern as the oscil-
lation frequency of a ring VCO is highly dependent on the supply voltage. In case of
LC-VCOs the oscillation frequency is a function of the discrete inductor and capac-
itor values and thus have high supply noise immunity. However, inductors are large
consumers of silicon area, and are thus less suitable for very large scale integration.
53
The proposed work generates a bias voltage VBIAS to control the gate of the
PMOS load of the differential delay stage. In order to negate the effect of the supply
bias current through the delay stage. The variation in VBIAS with supply voltage
followed a linear pattern and hence this behavior was characterized in the form of a
linear equation. The bias voltage, VBIAS , was generated in the bias generation block.
The control voltage, VCT RL , which is the input to the VCO, was used to change the
frequency of operation of the VCO. One of the key elements to generate the bias
voltage was to find the slope of the linear curves, i.e,KF V SU P . For the simulated
design the slope was found out to be 0.06 V/V. The bias voltage was generated using
However, due to temperature and process variations, the frequency curves may
shift or change. This may lead to a change in slope KF V SU P . In order to find the
This algorithm calculates the new slope, anytime there is a change in the frequency
in the slope, VBIAS was generated using an operational amplifier, some fixed resistors
and some tunable resistors. The slope KF V SU P , is modeled as a ratio of two resistors.
Hence, any change in KF V SU P , is reflected by varying the value of the resistor used
Some ideas to vary the resistor value are presented in the next section. The
voltage-controlled ring oscillator presented in this design operates from 236.6 MHz to
373.3 MHz. Some ideas to increase the frequency of operation are also presented in
54
5.2 Future Extensions and Major Contributions
5-1. A control word, controlling the switches, can then be generated in the digital
R1X
Figure 5.1: Resistor tun-ability (KF V SU P = R0
)
The major contributor to the delay of the VCO To increase the frequency of
operation of the VCO, is the RB -CB network. It acts like a high pass filter and
55
introduces phase delay of approximately 90 degrees. Since we have three stages of
this network it adds a delay of 270 degrees. However, if we add another stage of RB -
CB network, the phase shift will wrap around and produce only 90 degrees (360-270
degrees) of phase delay, as explained below in Figure 5-2 . This may help the VCO
the individual delay stage. This will help reduce the delay of each stage at the
the bandwidth, only the switching delay of the inverter will contribute to the delay,
5.2.3 Sub-banding
this design to reduce the oscillator gain of the proposed voltage-controlled oscillator.
This further helps reduce the output jitter and improve the supply noise rejection. An
additional control word can be generated in the proposed digital calibration algorithm,
56
to facilitate sub-banding. Thus digital calibration to generate VBIAS and the sub-
banding technique, can together help design a highly robust and supply insensitive
VCO.
supply insensitive architecture for the ring VCO. It helps model the effect of supply
negate this effect. It also discusses the concept of digital calibration to help counter
57
APPENDIX A
58
Figure A.1: Manetais VCO with symmetric loads and replica-feedback
59
Figure A.2: Voltage-controlled oscillator - Wilson and Moon
60
Figure A.3: Voltage-current converter
61
Figure A.4: Current multiplier - Wilson and Moon
62
Figure A.5: ICO - delay stage1
63
Figure A.6: ICO - delay stage2
64
Figure A.7: Proposed voltage-controlled oscillator
65
BIBLIOGRAPHY
[5] A. Hajimiri, S. Limotyrakis, and T. H. Lee, “Jitter and Phase Noise in Ring
Oscillators,” IEEE Journal of Solid-State Circuits, Vol. 34, No. 6, June 1999.
[8] A. Aktas and M. Ismail, CMOS PLLs and VCOs for 4G Wireless. 2004.
[9] I.-C. Hwang and S.-M. Kang, “A self-regulating VCO with supply sensitivity of
¡0.15February 2002.
[11] T. Wu, K. Mayaram, and U.-K. Moon, “An On-chip Calibration Technique for
Reducing Supply Voltage Sensitivity in Ring Oscillators,” IEEE Journal of Solid-
State Circuits, Vol. 42 , No. 4, April 2007.
66
[12] P.-H. Hsieh, J. Maxey, and C.-K. Yang, “Minimizing the Supply Sensitivity
of a CMOS Ring Oscillator Through Jointly Biasing the Supply and Control
Voltages,” IEEE Journal of Solid-State Circuits, Vol. 44 , No. 9, September
2009.
67