PROBLEMS: Chapter 44 ‘onsider the situation described in P4.19 above in which J is implemented using ive voltage supply. With a -10 V supply what value of Re ensures Ie = 1 = 0.7 V. For Re, select a "pseudo-standard value", one specif istor Re and a for a transistor for two significant di cchosen to prdvuce a current on the high side of your calculated value, Now; for Vag varying from 0.6 V to 08 V, B from . ollector current? Now chose Re as large as possible While ensuring active-mode operation. For,K¢, select a pseudo-standard value (as ified above) on the I Value of v¢ for your chosen Re varying A BIT which conducts ic = 10 What is the collector current at 2.19 mA at Veg = ‘corresponds? What would for which V4 = 200 V operates at Vee = 5 V at a current of 100 HA. What would its current me (provided breakdown does not occut) if Veg is raised to 50 V? SECTION 4.6: ANALYSIS OF TRANSISTOR CIRCUITS AT DC L | 425 For the following. circuits, find node voltages, Ve, Ve. and branch curens Ips Jee lp. Use Vac = 1 Ven | = 0.7 V and B= 30. -32-PROBLEMS: Chapter 4-5 D 4.26 For the circuits shown in P4.25 a), b) above, find emitter and collector resistors (to replace the present ‘ones) such that /g = 0.5 mA and Vgc = 0 for a= 1. 427 For the following circuits in which |Vge| = 0.7 V and B= 10, find the collector, emitter and base currents and volages, stv + 30v tov +104 +10 to0Ka $240 ova $240 sa ino 10%0 Su S Se SF Fe 20, find the collector, base and emitter vol- 428 For the following circuits in which | Voe | tages and currents. +10 +10v + 10¥ 1040 1010 10K 1040 100K ma = = =a) 10KQ ce 10 KO -fov -}ov -fov -33-PROBLEMS: Chapter 4-6 429 For the circuit shown, find the voltages at the base, emitter and collector for B=, 100 and 10. Assume Vag = 0.7 V. 430 For the cireut of P4.29 above, for what value of does the emitter current reduce to 80% of that for Bow? 43i For the circuit shown, find Ig and Ve for Vag = 0.7 Poe m, find Ig and Vce for Var: Ka $2Ka 10K 34K 432. For the following circuits, find the currents Ic and the voltages Veg. Use = 50 and Vag = 0.7 V. + 10v "EEE.PROBLEMS: Chapter 4-7 433 +15V For the circuit shown, find the labelled node voltages when B is a) 2, b) 100. 200ka va 100Ka SECTION 4.7: THE TRANSISTOR AS AN AMPLIFIER 434 What values of transconductance apply to BJTs biased at 1 WA, 100 HA, I mA, and 100 mA? 435. For the current levels listed in P4.34 above, what equivalent small-signal input resistances model opera- tion as seen at the emitter? At the base, for B= 1007 D 436 In the design of a particular amplifier, a young engineer considers the use of bias currents I, from 0.1 to 10 mA. Unfortunately, the application requires that the de voltage across the load resistor be held con- stant to provide correct biassing of a connected amplifier stage. Find the range of gains she ean expect from this gain stage. 437 A particular amplifier tlizes a BIT biased at f; = 100 A and having B= 150 to drive a load of 10 kA. For the emitter grounded for signals, what is the input resistance at the base, and the voltage gain from base to collector? 438 What is the voltage gain vo, of the amplifier shown? Note that capacitor C grounds the base of the amplifier for ac signals. Note that the gain is essentially independent of f (although the de voltage Vo is nod). What is the input resistance “seen” by the source v,. ‘What does the gain v,/v, become if the source resistance is 75.9. T model shown in Fig. 4.27 a) of the Fes - is model find gu’, rx” in terms of res 8m and rg of the Bask -35-PROBLEMS: Chapter 4-13 V,(1-/ YR, ple of the Miller-Efect idea intro SECTION 4.12: THE TRANSISTOR AS A SWITCH ~ CUTOFF AND SATURATION 4.68. In the circuit shown in Fig. P4.97 in the Text, the transistor operates with Voe = 0.2 V, Vag = 0.7 V, and forced B of three. What must the value of Ry be? For Broreat $ [/2, what is the largest value Ry can have? 409 ™ race For the circuit shown, characterize the mode of operation of each transistor and the vollages vx and +0 1K Uo for v, equal to: aov bx ve bas Assume that Vog sus = 0.2 V, Vag = 0.7 V. At what uw tka value of forced B do Qi and Q2 operate, when we cs saturated? Pee Os ore -41-PROBLEMS: Chapter 4-14 4.70 In the following circuits, B= 100, Vgg = 0.7 V, and Vee se = 02 V. Find Ve, Va. Ve and the value of B at which each BIT operates. At what value of I docs each transistor just leave saturation? +o +10 +3 Ka 310K0 100 pa «® wo) ' 1 ma mk (ON 4.13: A GENERAL LARGE-SIGNAL MODEL FOR THE THE EBERS-MOLL (EM) MODEL a iad large npn BIT is known to have a base-emiter diode whose scfe cuent is 2 x 10-PA, and fa base-collestec junction which is 40 times larger. Current gain By if measured to be 150. For this fa The transistor in P4.71 al fon is in the forward active mode, what is the resulting diode drop at a YK tm pin oe ri eee Se the base connection is changed, being wired to the ‘base and emitter voltages are the same, the base-emitter ion of current flow? What is the mode of operation collector for a 100 mA current flow? DK apa os eee aes Sen for varying base currents! -42-SOLUTIONS: Chapter #4-6 SECTION 4.5: GRAPHICAL REPRESENTATION OF TRANSISTOR CHARACTERISTICS 422 Ceneraly, TC = 2OmVIC. Now, for 10mA, at 25°C, Vas = 700mV. Thus, for 1OmA, at O'C, Veg = 700 + (0 — 25) (2.0) = 750mV. For 10mA, at 50°C, Var = 700 + (50 ~ 25) (-2.0) = 650mV. Fos Vee Serenata 620mV, a 25°C, 7 = 102K 7078 — O.407MA; at O'C, i = 10 e753 = OSSmar 50°C, i = 10 e(62-80725 - 3.012mA, a nearly 55 to 1 range!! 423 Mee ie =219~210=000mA, fA Yor =9=2=1V. Ts = 5% = 1. make, am average current of ( 2.19 + 2.10/2 ) = 2.145mA. ‘Thus Va = 77.8 x 2.145 = 167V. Correspondingly, at ama, r= 1 = orn = 12M tt = = vey rh 200 424 AL LOMA, ry = SoD = 2MO. For an increase in Veg from 5 to SOV, the increase in cureat is 2 BF = 22SUA. Thus at SOV, the curent becomes 100 +22.5 = 12254. SECTION 4.6: ANALYSIS OF TRANSISTOR CIRCUITS AT DC 425 Inge ase the ative mode nly, with a condutng enter enon, ten vf hat he cote jiion sno contig. Since B= 50, = 2° = 038 @ Ve = ~V; Ve = ~4 407 = -33V; = a= ImA; Ic = 0.98(1) = 0.98mA; fa = SEF = 9G; Ve = 10 +47 (98) = -S39V ee is OR: operon iin sen mode. (©) Vp = -6V; Ve = ~6 + 0.7 = -5.3V; Ip = 51 o--53 = 1.606mA; Ic = 1.606 (98) = 1.574mA; 1.4WA; Ve = -10 + 4.7 (1.574) = ~2.60V. Since V¢ is well above Vp, the transistor In practice, in saturation vge = 02V. Thus, Ve=Ve -02 = 5.3 -02 = -S8V, and fe = S5==10 « 0.95t0A, with In =e ~ Ie = 1.606 -957 = O.648mA, © Va =-2V; Ve = -2 40.7 = -1.3V; Ip = ~8 + 4.7 (0.98) = ~3.39V. See OK, @ Vp = OV; Ve = OV. ‘Thus the tra 10V, and Ja = Im f= Os Ip = 228. 19. .128 (0.98) = 1.105mA; bb ZIMA; Vo = 0 ~ 1.105 (33) = -3.67V. Since Ve > Vp, operation is in the active mode, 38 assumed. Vp = -OV5 Vp = 6 -0.7 = ~6.7V; Ip = 87 ==10 «gone; Je = 0.702 (0.98) = 0.688mA; © 05 via tn = 9G 13540; Ve 20-068 02) =-227V. Sice Ve > Vy sis asive-mae ope tna ame@ ) @ © © @ 428 @ ) © 429 For Veg = the resistor to 10V, creating an equivalent base source of Vas 1OOKR. Now, forthe bae-smiter loop and base current fp, 3¥ ~ (100K) Ip ~ 0.7 ~ B+ 1) 0.349) SOLUTIONS: Chapter #4-7 Vy = AV; Ve = ~4 + 0.7 = ~3.3V3 Ie OSmA; Thus, Re = 22 = 66KQ. Now, Ie = 05 x1 = OSMA: Vo = ~10 + Re (05) = Va ~ Vac =~ -O-= AV: Thus, Re = he 4+ 10) = 12k9. Vp = ~6V: Ve = 6 + 0.7 = -53V5 Ie Ve “10+ Re 05) Ve = OV; Vp = 0+ 0. 93 = 1023A = 1.023mA; Ve SBWA; Ic = 93HA x 10 = 0.930mA; fe = 930 + 100kQ (0 - 2k (0.93) = 8.14V. Ve = H10V; Vp S30 93h; Le = 93 (10) = 0930mA; fe = 11 93) = L023mA; Ve = 0: Ve = OV; Vp = O.7V; fy = 4007 _ O72 gaya — TOMA = 23HA; Fe = (23HA) 10 cs a * le = “Tooke ~ TOKE he) 0.230mA; Ie = 11 (23) = 0.253mA; Ve = 10 ~ 2 (0.23) = 9.54V. ‘See that Ve = OV, and that if the transistor conducts with Vp = -0.7V, that the current in the upper 1OOKA will exceed that in the lower, providing no net base current. Thus the transistor is cut off, with Vp = +10 ~ (10 ~ -10) = 0V, Ve =-10V, and fy TOOED + 100K Assume active mode, and consider the base-to-emitter circuit: Thus O ~ 10k (Ip) -0.7 ~ 10KQ (Ie) = -10V. But fe = (B+ 1) fp = 2g. Thus 10 Jp + 10 (21 fy) = 9.3V, whence Ig = 22. = 42.27HA. Thus, Vp = 0 ~ 42.27 (10k) = -0423V; Ve = -0.423 = 0.7 = -1.123V5 Ie = 21 42.27) = 0.888mA; Ic = 20 (42.27) = 0.845mA; and Ve = +10 ~ 10k (0.845) = LSSV. ane ov _ = -32Bv: Vv, = 2 As before: lo = oer argon = 220A Ve 100k (32.26) = -3.23V; Vz = -3.23 -0.7 = ~3.93V; fe = 21 (32.26) = 0.677mA; Ic = 20 (32.26) = 0.645mA; Ve = +10 ~ 10k (0.645) = 3.58V. lov -ov, 10 TOk + TMAT ~ {iO 470K 8.26 - 0.70 = 7.56V; Ic = 2 (0.174) (10) = -834v. O.174mA; Ve = 10 — 10k9 (0.174mA) = 8.26V; Vp 0.174mA 21 Here, Ie = 1166mA; fp = = 8.29 UA; Ve =-10 + 0.166 .7V, the current in the base-emitter shunting resistor is 0.7V/10kQ = 70MA. This flows in 10 — 100k22 (TOA) = 3.0V, with Ro Ip #0. Ths be = qe. For B=: Ip = OWA: Vo = 3V5 Ve = 3 ~0.7 = 23V5 Ip = 532 = O6FTIA; Vo = 10-33 (04697) = 10-23 = 729. ‘or B = 100: Ip = 23 _ = 4 a 6 (105) = 2465V; Ve = 2.465 — For B= 100: Ip = 35723 ay = SSUA; Vp = 30-535 x 10 (105 Ve -207-430 431 432 SOLUTIONS: Chapter #4-8 0.7 = 1.765Y; Ie = 100 (5.35) = 0.535mA; Ve = 10 - 3.3 (535) = 8.23V. For B= 10: Ip = ——23_ = =30- For B= 10: In = 357i gy = WGBTHA: Vp = 3.0 ~ (1687) (0.1 0.613V; Ve = 10 — 3.3 x 10° (16.87 x 10° (10) = 9.44V. 1313; Ve = 1313 ~ 07 From the solution of P4.29, Vag = 3V, Rp = 100kQ. V. For Pui Ve=3~07 =23V, ith = 22% = 0607mA, B le BV, with Le = Sp = 0.69TMA. jenerally, Ip = B+ H@3)____23__ For B generally. Je = (8+) Is = 33 ja 100 = 339 1000+ rns, gp BP = 08 (0690 = S516, o 33-4 IO = 2S = 4128, o 1018 + 1) = 33 + 100{B + 1) 2 Bei 05576 ~ *!> 0.8248, + 1 = 100/.8248 = 120, whence B = 120. He, Von = athe OV) = Vi Ran = 10k 20k = 6640. Van = age OV = 3: Ran = - (©) For Paes Vy = 3V; Ve =3~ 07 = 25¥; p= 23Y = nama; Ve = 9-2 22) = 44V. Ver =Vo~Ve=44-23= 20V. 0) For B= 10: p= B= 5 a4semk; vy = 2186 GR) = 2156V: Yo=9-~2k 2186) 1001 2 INV; Vo = A731 ~ 2136 = 42578¥. = (©) For = 10: te = BI = LAtamAs Ve = LA02Vs Ve = 9~2 (12) JO = 6396V; Vee = 6.396 ~ 1.432 = 4.968. (@) Let fe =i. From the supply (0 ground: 10 = 10k( +i +1) + 100K +i) + 07, oF 101 + 10 150+ 100 150 = 9.3 - 10 - 1001. Thus 1221 = 93 - 1101 ~ ~~ (1), or 9.3 = 110 (02) 71 : oa - 0. St ay Teg = O-S82MA = Ic, for which Vox = 10 ~ 10 (02 + 2 (0.582)) = 386V. () For Vp = O.7V, Tsun = 9.3 ~ 110 (0191) = O191mA. From the previous result (1) in (@): fe. and Ver = 10 ~ 10 (0191 + 34. (590)) = 3.29V. 110 0212) 122 (© For Vp = O.S7ImA, and 1a 10100212 + Sh ast) =a (0) Latte ue vohage bev decal te/. Tt 9207 +h4 DEC=OT SE — == (Ds Ve =v + 100k (W/68K + i) = v + 147 v + 1007 = 247 v + 1001 ~~~ 2); Also Yc = 10 ~ 10k (B+ 1) i + W68K) = 10-510 - 0.147 9 ~~~). Now @) with Q) 247 + 100i = 10 - 510i ~ 0.147 v, oF 26170 + 610i = 10 =-~ (4). Then (4) with (1) > = 10, or 1.832 + 1335 i + 610 7 = 10. Thus, = O1lmA, whence v = 0.7 + 51 (O11) = 1.261V, and fe = Bi = 50 1.261 8k 2617 (0.7 + SI i) + 610 10~ 1,832" 8.18, 133.5 +610 ~ 743.5 (OIL) = O.SSmA, Ve = 1k (B+ 1) i = 1 (51) (O11) = OS6IV, Ve = 10 ~ 10k (16011) + = 10 - 5.61 ~ 185 = 4.205V. Thus, Vee = 4.205 - .561 = 3.69¥ = 208 -SOLUTIONS: Chapter #4-9 +18V 1507 18V +143¥. v WWkOZ 1KI0N) = 10KQSIOnK = SR ~ 07 = 43¥; Yo = 15~ 1S (4.3) = 1027V; Vo = .6V. Van = SV, and Raq = 100K M 200kQ = 66.70; A034mA; Vp = 1k (4034) = 4.03V; and V4 = 4.03 + 0.7 = 4.73V. At node CV =15- 19 (0.7) = 14.94; R= 10k H 101k =9,10K9. Now, from the collector at node C, 1 = 04034 x 70 = 0.399mA. Thus, Ve = 1494 -0:399 (9.10) = ILIV, and Vp = 11.37 + 07 = 1207. . 15-1207 100, Thus, Ve = 0 + 1k A= HOT 100) - 200, SECTION 4.7: THE TRANSISTOR AS AN AMPLIFIER 10 le 134 Generally, ga = 42: For WA, gy = IO 434 Generally, gq = 7! For IMA, bm = 5s for ImA, gq = 4OmA/V; for 100m, fq = 4A/V. 10 x 10° = 40MAV; and for LOOHA, gm = 4mA/Y; @Vr 1 Vr Vr iB 4 e emitter, rp = YE = SVE ZL. At the base, rp= TE = ME = Be ety, 135. At the emit ee a Te To a G+ Dre. Por 100 199. Now, for fe = WA, ry = OF = 24.7540 25K, ry = —100_— = 2.5 c wx 10% 40x 19% = MO & 250, rq = 2SkQ; for ImA, r, = 250, ry = 25kQ; for 100mA, r, = 0.250, rz = 2502. ale 436 Gin = ty Ra whe by = S2E = TE the votge aeons Ry = fe Ry = ly Ry is const K. "Ve te, _K Ks casa Thus he ga fe x A= Ks constant Thus the gun i const. ‘There is no gain variation possible. The bias current does not matter, if the load resistor is varied this K Tag fo which the | gain way! Vr _ 25x10? 4 input resistance at the emitter, rp = 47 = 25107 = 2500. ‘The input resistance . 37 The input resistance a the emits, rp = FE = BAT, put resistance at the base, re= G+ Ire = 151 250) = S7.75KO. The voltage gain, baseo-collestor, is aR _ “150 19a — SAE 150, ED _ so 3yyy, 7 1st * 250 N.SOLUTIONS: Chapter #4-19 O.102HA. Thus, Vos 1.4 + 0.1 = 15V, = 233mA, fp2 = 2 +23. |01 = 033A. Thus, Vor = 0.7 -73V. Thus, fea = +07 40.33 x 10° x 1x 10% =2.18mA TS (@) See with = 6840 included, fea = 220A, fps = 32HA. Now, 42 = 292.20 = 11.40, re = 101 (11.4) = 11480, rej = 25/032 = 7810, rqs = 781 (101) = 78.90. Thus, 2 ee > : a 1.148 11.68 Pe B SSRIVIV, = Sag aE Tay = OSSIVIY, and Gp 77821 K 0.591 = -308V/, with fy = (L148 ¥ 68k + 078) 01 Sak ©) Now wih R= 680 remove, he sea in tos igh, and te colec o loves by O1Y or, wit es neg by Sh Oma Te en ant es eX (109, rea 098K, rey = 25023 = 10870, and ryi= 110K. Now, % A ae & we VI, Nsom ant 2 5 Be ny HSIN, OM 05 ant sue asm ~2TAVIV, with Rig = (1.098 + 1.087) 101 = 221kQ. Tow sacs ce by, ric [ TIME] 4 iguaai4 u is~ ane. SECTION 4.12: THE TRANSISTOR AS A SWITCH — CUTOFF AND SATURATION 5-02 5-07 _ 43 468 Ie = 2 Min, andy = 9707 0 A. Ry= 24D =< 2610-27. Now, 48 43 BL Ry s Fe x E = 0468 pao. 499 (@) 4 = OV + Q, cutoff, and Q; saturated; ) yy Vv» Qa ited, Q cutoff, fe 5-07 | _ 48 _ Broad = 7 [ l “ea” | a3 7h 21940 SOLUTIONS: Chapter #4-20 (@) Assume the transistor is saturated, Working on the diagram: +8V 0 +tOV Fav +90V (4s90y2=7.05v 10K $40K0 s04rIoK toKa 310K0 ma le A e 1 ' 1 aa mm ma 2.05V, Va_= 2.05 + 0.7 = 2.75V, Vo = 2.05 + 0.2 = 225V, 522.15 O75 le TISmA, ty = 2 FEE = 225mA, and Byerced = Map5~ = 344. For the edge ot suraion atv Ye, $=92=2 | 190 12=22=2, fr wich 80-100 v= 98% 99 202, and v= A244, win = 12% 22-420 ascites of tron = 02.= 48V, Vp = 48 + 0.7 = S.SV, Ie = 10.1 = 0.9mA, and (©) For saturation: Vo = SV, Ve = a (B+ 1) Ip = 101 (.1mA) = 10.1mA. 8 9. For barely linear operation, I = Or SECTION 4.13: A GENERAL LARGE-SIGNAL MODEL FOR THE BJT: an an 4an3 44 THE EBERS-MOLL (EM) MODEL For Br = 150, ot = 150151 = 0.9934. Now, we are given Isp = 2x 10PA Since the BCI is 40 times larger than the EBJ, Isc = 40/se = 40(2 x 10°) = 8 x 107A, and On 0.0248 Gy = (W4O)ay = 0.993440 = 0.0248. Finally, Be = “== Tog gpag = 0.0254. For the forward active mode, ig = Ise(e"™* — 1), since vge = 0. ‘Thus, vag = Vrln{ip/Ise] = 25 x 10™in{100 x 10-2 x 10-%)] = 673 mv. 100 mA. From Eq. 4.10, and for diode connection, ‘With this connection, operation is in the reverse active mode, with collector current flow in the forward BCI direction, making ic in Fig. 455 of the Text negative. Now, in Eq. 4.107, Ic =~ 100 mA, Yee = 0, the first term is zero, and the — 1 is negligible due to the large value of Ugc: Thus = 100mA = Igce*** where Isc = 40lse = 40(2 x 10"A). ‘Thus ‘vac = Vac = 25 x 10In(100 x 107¥(40 x 2 x 10°) = 581 mV. le 20. “et ~ 201 0995, az == 0.0199, and Br OF 30 T=, — 10.0199 For normal saturated operation, with Ip = 1 mA, Ic = 0, Byored = -220-