sae Tee tase ROAM ' ** Semiconductor 1¢ | ™ BA5412 | 9 STRUCTURE, Silicon Monolithic Integrated Circuit PRODUCT SERIES Dual Power Amp. for Stereo Radio Cassette Recorders Me BA5412 PACKAGE OUTLINES Figure 1. (Plastic Mold) BLOCK DIAGRAM Figure 2 FUNCTION + High output power. Pout= 5.4W Q, THD=10%) Pout= 2.54 (Veo= 9V, Ri=4Q, THIF10% ) + Excellent tone quality. THD = 0.09% kHz, Po=0.5H) Vro = 0. (Re=10k2 ) RR = 60dB (fnn=100H2 ) + Wide supply voltage range. Vee = 5.0 ~ 18.0 V + Minimal power-on/off pop noise. + Built-in protective circuit against ripple of starting motor. + Built-in thermal-shut-down. + Built-in Stand-by switch. + Unchanged starting time against supply voltage. + Soft-clip. + Useless heat sink. (Vec=V, RL24Q) fe Absolute Maximum Ratings (Tar [ Parameter Twit) I Supply Voltage (vee i Power Dissipation {ow | Operating Tenperature Range Topr “ L_ “Storage Temperature range | Tstg__ | -55_~ +150 °C 1 Inside of ASO. (Fig. 10) 2 Back-metal temperature 7: (Fig.12) 33 Derating is done at 40qk/*C for operation above Te (Without heat sink.) Recomended Operating Supply Voltage Range : Vec= 5.0 ~ 16.0 V OHM assumts1o responsi forthe use ofan cious desorbed bron ‘ny naion or ahr nghand makes o epresariations Wot the creuts ae ] check Approval bate OE 7167 "90 | Specticevon oan Lape pleads BY [gomw cov. ore Aa 2.2 (1xiooxen)"og BAS 412 Treaicte 7 ROHM Semiconductor 1¢ |" Unit : am) ( (Plastic Nold) Fig.1 Outline HAR 7 16 7°90 | one Specification ‘Speciicaton No | ROHM CO., LTD. Ae 2.2 (XIX SL9 ROM {Predvets Semiconductor 1¢ | VP BAS 412 a | _ ~ Electrical Characteristics (Unless otherwise specified, Ta= °C, Veo=12V, Ri=3Q, Re=2402, Kg-600Q, feikiiz, Test Cir.Pig.2) 7 Tt ) Paraneter | smmbot aS init | Conditions | Quiescent current 45 | mA | VineOVrms _ } [Maximum output power L- | Ww lV | [Rated output power 1 T a =| [Rated output power 2 = |W THD=10% Voo=9V R.=42 | {Closed loop voltage gain i a7 | | [Output noise voltage t [1.0 | alirms | [Total harmonic distortion | [io | % | [Ripple rejection ratio { [= | [Crosstalk level | { | Ce | (Cir. current(ST.BY SWoff)| Torr | — 0 =| uA = | [ST.BY pin inflow current [Isiw | — | 0.9 | — | mA [VermVec | (Input bias current | Tei = | 0.1 [6.5 [uA TRe=00 j © This product is not designed for protection against radioactive rays. sel 31 Ver. =3V~Veo Fig.2 Block Diagram & Test Circuit HAR 7 16 7°80 |Specitcasion | oat Spedtannon Na ROHM CO, ITD, | ee=tenon Aa 2.2 (1 xtooxz0) 5Rem Meee Sen conductor 1C ; wwe BA5412 Fig.3. OTL Application Example Fig.4 BTL Application Example ROHM CO., LTD. ‘Specitcation Ne, Aa 2.2 (i xMoKARoHM ia Semiconductor 1¢ | "%* BAS 412 PB 9 Notes for use 1. Input circuit Fig.5 shows the input section circuit composition. No input coupling capacitor is required. But input coupling capacitor Cin may be used to eliminate the noise from the volune due to up to 0.5, of bias current Isiw generated fron the input pin. Input bias resistances are required.Therefore put input bias resistances (33kQ is recomended) between INPUT and GND. 2. Gain adjustment Gain Gv is obtained by the following equation. RurtBe Gy = 20 LOG Re Gv can be reduced by increasing Rr. But Gv at 30 or nore dB is recommendable since reduction in Gv increases L ‘the feedback facilitates oscillation. 3. Oscillation preventive measures It is recommendable to use a film capacitor with good iF ‘temparature and high-frequency characteristics for 2 oscillation preventive capacitor C1 between the B.S. pin i) and Vec pin. Since ceramic capacitor temperature characte- ristics is not good, confirm that a sufficient amount of allowance for oscillation is provided before starting operation. Oscillation preventive capacitor C2 may be used between the OUTPUT and GND. Since the amount of allowance for oscillation varies depending on the print pattern and capacitor position, design the system by referring to our application board patterns. 4, Vee line and GND line Since PIN12 is used for both Pre. GN) and Pow. GND, some print patterns may cause worse crosstalk and distortion factor due to the common impedance of these GN)s. The power supply capacitor between Vec and GND may also deteriorate ripple rejection and distortion factor due to the impedance common to the Vcc and GND of sone print patterns. So design the system by referring to our application board patterns (1000,F or higher capacity power supply capacitors are recommendable). HAR 7 16 7 "80 Date ROHM CO., ITD.ROHM [eee Semiconductor 1¢ |"? BAS 412 ST.BY SH. (Standby switch) Since as ST.BY Sk. is built in PING, power can be turned on and off with a small-capacity switch. ON-voltage V1 is available °° : STARTER within the voltage range, 3V~Vec. So the ST.BY PIN voltage will (| aya) deteriorate no characteristics as in the conventional systens, [sy & ~~ 7 9 resulting in higher degree of freedom in designing. va 3 | Ff Sone switches installed outside generate a low popping sound when it is turned off. In such a case, instal] an approx. 0.022uF capacitor (C3). 6. Filter pin veeG!—_avanr] PIN? is used for the ripple filter. Rejection becones easier t0 pj, yen, 8%! sone extent as the pin capacity increases. But since it rosa influences the starting tine, 100~220 uF is reconmended. 4 7. Supply voltage then Power transisters are inside of ASO, the IC will not be in Fig.9 trouble up to the maximun absolute rating,Vcc=24.0V. When the IC is operating of ordinary, Vcc should be suppressed to inside of Aso SAMPLE DATA reconnended operating supply voltage range. ee After all, When ST.BY SW is turned off, The IC is compensated till Absolute Maximum Supply Voltage (VecMax=24.0V). When ST.BY Sk. is turned on, set the reguration characteristic of power supply such as Vee should be suppressed to 18.0V or lover, capacity of power supply capacitor considered. If this level is exceeded, the IC is damaged. Installation of the IC in the reverse direction may instatane- ously danage the IC since PINI connects the Yec and PIN12, the GND. Fig.10 So take sufficient care. ° 152022 a4 26 8. 7.8.D. (Thermal shutdown) ‘then the IC teaparature has extraordinarily increased due to the shortcircuit of loading or insufficient heat release, the heat cutting circuit operates to restrict the output voltage. The circuit is set to operate when the heat releasing plate is at approx. 175 9. Others Our application board patterns are reconsendable but sufficiently check the required characte- ristics before operation to prevent careless mistakes. Before modifying the fixed number of outside installation, study not only the static characteristics but also the transient ones including the dispersion of the IC and other parts installed outside. 10. Standerd DC electric potential of each pin (WV . Circuit measured:Fig.2) fPINNo| 1 | 2 7 I 1 | i | (WCW) Vee | 6.0 [ { 0 {ow | f Specification No | ROHM Co., ITD. Ae 2.2 CO xIOOKEO) STreas Tr ROHM |Preevets semiconductor 1¢ | YP ono ony en eR) BA5412 Page 1/3 O Camm, GND Oo ouT2 iv voso OUTIL O ST.BY Vee O Fig.11 A re te = ALUMINUM E20 $f ot z 3 ALuM NOM i i. 2 °o as s0 75 10015150 175 = “;0 a0 46 100700 <00 1900 AMDIENT TEMPERATURE © Te [P) MEAT SINKS: 82 lenD AcIMPINITR HEAT SINK oSe0307/0 elaveateien Fig.13 Diasentel Fig. 12 | pote MAR / 16 /'90 [Specification { — ROHM CO., ITD. ‘Specification No: a 2.2 Ch xiooxzo)Proacie Tr ROHM Seniconductor 1¢ |" Electrical Characteristics Curves TMD «xD :1e (may pourtn) 1a - vee ov teed Vinwovens Tanase. SUPPLY VOLTAGE :Vee (¥) qv = te gas, oD rr 2 se £° ourrur powsn : Pei) 5 5 wapsiay f LOAD : RL GQ) . MAR 7 16 77 Date ‘Speci ROHM CO., LTD. BA5412 te Pose | 8/79 ne 30 Peiwy evee(yy Tarase ° fmtowne os = 2s: 2.03 8.3 te pour - vee THD~ 10x aa hata)? 90 [Specification No. 2 Yxi0oxa0) 5 |9/9 | ROHM pees eee ial BA5412 . ° 4 8 42 36 20 24 & "10 108 Ty 20e 100% surpLy vouTagz : vee (v) So INPUT RESISTANCE : RE (a) 10 100 16 tek 100% se 108 a 0x 100% INPUT RESISTANCE + Re (Q) FREQUENCY +f (me) ats ate 2 Hatt ot INPUT RESISTANCE : Re (0) FREQUENCY + # (Hz) Spestiaton No | ROHM co,, uD. pecticat a 2.2 (1 xt0ox20)