BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, PILANI K.K BIRLA GOA CAMPUS FIRST SEMESTER (2011-12) TEST -1 Physics and Modeling of Microelectronics Devices (MEL G631) Date: 16-09-2011 Time: 60min Maximum Marks: 40 Closed Book (ii) Any required data not explicitly given, may be suitably assumed and stated. QI. Complete the energy level diagram given below for donor doped and acceptor doped ” ra Q2. gy Q6. Q7. ks material. Given kT=0.0259 eV, E,=I.1 eV and nj= 10'° om™. Ec E, Ey 10% = 10 10" 10"* 107 108 10" —-10° Np or Na cm® Calculate the probability that a state in the conduction band is occupied by an electron and the thermal equilibrium electron concentration in Silicon at 300 K. Assume Fermi level is 0.25 eV below the conduction band, (4) A silicon wafer is uniformly doped p-type with Na = 10'* cm. What are the equilibrium hole and electron concentrations at T = 0 K, T= 300K and at very high temperature? [4] . A silicon sample maintained at room temperature is uniformly doped with Np = 10!° cm? donors. Calculate the resistivity of the sample. If the sample is compensated by adding Na= 10'° cm” acceptors, calculate the resistivity of the compensated sample. [6] . A resistor pattern is approximately 0.3 mm wide and 3cm long. Estimating the deposited CdS film to be 5 um thick, Np = 10"? cm? >> nj, and jt, = 100 om?/V-ses, compute the dark resistance of the device. [6] Calculate the built-in potential, width of depletion layer, xo, %p and maximum electric field ofa Si step PN junction operated at 300k with Na= 10'” em™ and Np=10"" em®. [8] A silicon step junction maintained at room temperature is doped such that Ep= Ey+2kT on the p-side and Ey=Ec-E,/4 on the n-side. (a) Draw the equilibrium energy band diagram for this junction. (b) Determine the built-in voltage. [6] List of constants: 8.62 x 10° eV/K At T=300K kT=0.0259 eV 2 (Si) ny (Si) N.(Si)=2.8 x 10° cm at T= 300K E,(Si) = 1.1 eV ALL THE BESTBIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE PILANI K.K BIRLA GOA CAMPUS FIRST SEMESTER (2011-12) TEST -2 Physics and Modeling of Microelectronics Devices (MEL G631) 1-10-2011 Time : 60 min Maximum Marks: 40 Open Book Instructions: (i) Answer All questions. (ii) Any required data not explicitly given, may be suitably assumed and stated. QI. Consider a PN junction at T=300 K has the following parameters: N.= 5 x 10'° cm”, No= 1 x 10'% em, Dy= 25 cm/s , Dp = 10 cm/s, t= 5 x 107 s and tp = 1 x 107 s. The cross sectional area is A =2 x 10° cm? and the forward-bias voltage is 0.625 V. Calculate the (a) minority electron diffusion current at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode. Now the p region is long and the n region is short with W,= 2 jum, is there any change in the currents? Justify your answers with numerical values. [10] Q2 Find (a) Qao, the base-majority charge in the quasi-neutral region for the transistor data plotted in Figure 1 and (b) the base width xn if the average base doping is 3 10"? atoms cm®. Assume D, =25cm? s". [6 Q3 Sketch the energy-band diagrams (a) at thermal equilibrium and (b) at flat band for ideal MOS systems with aluminium gates to (i) 0.1 Q-cm n-type, and (ii) 0.1 Q-em p-type silicon. (4] Q4. Ina MOS prove that if'n.= 10 Na, 6. is only 58 mV greater than >. [4] QS. Find the threshold voltage (a) in 1 Q p-type silicon and (b) in 1 Q n-type silicon. The MOS system for each case is characterized by : (i) Aluminium gate for which q}n — 4.01 eV, and (ii) 80 nm silicon dioxide, (iii) The oxide is free of charge except for a surface density (Q¥q) = 7 x 10" em?. The channel is not biased except from the gate (Vc = Vg = 0). [8] Q6. Consider a n* polysilicon gate and a p-type silicon substrate doped with Ny= 1.1 x 10'% cm? Determine the oxide thickness such that V7= +0.65 V. (81 Figure 1 49*** ALL THE BEST**#***BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE PILANI K.K BIRLA GOA CAMPUS FIRST SEMESTER (2011-12) Comprehensive Examinations Physics and Modeling of Microelectronics Devices (MEL G631) Date : 05-12-2011 Time : 1 hour Maximum Marks: 25 Closed Book Instructions: (i) Answer All questions. (ii) Any required data not explicitly given, may be suitably assumed and stated. Q1. The gain-bandwidth of the field effect transistor is high with respect to BJT. State True or Q2. False. Justify your answer. 2] Determine the resistivity of a Si at 300K if doping rate is one indium atom for every 10-million silicon atoms. (2) ‘An n-type material induces an impurity level in ..... (2) the energy gap (b) conduction band (c) valence (d) none ti The mean free path in an ideal crystal without imperfections and impurities is-~ (a) zero at OK (b) infinite at OK (0) infinite at all temperatures (d) zero at all temperatures io] The diffusion coefficient and the mobility of electron are related as .... The expression for Debye length relating temperature and doping concentration is given by os : (1) Is zener breakdown more likely to occur in a reverse biased silicon or germanium pn- junction diode is the peak electric field is the same in both diodes? Discuss. 2 Obtain the static and dynamic resistance of the p-n unction Ge diode if the temperature is 27 °C and ly = 1 uA for an applied forward bias of 0.2 V. 2] In an enhancement mode NMOS the device parameters were given as Vos= 3 V, Vos = 5 V. Vin = 1V, UnCax= 25 HA/V2, Ip= 0.25 mA, find out the value of aspect ratio of the transistor. i)10. Ina MOSFET, low threshold voltage can be achieved by... {a) using the gate dielectric of lower dielectric constant (b) increasing the substrate concentration (c) decreasing the substrate concentration (d) using the dielectric of lower constant tt) 11. For values of drain voltage smaller than gate voltage, a MOSFET acts as a voltage controlled (1) 12. Two identical FET’s each characterized by the parameters gn and ryare connected in parallel. The barrgcete FET is then characterized by the parameters: . and (1) 13. A P*N junction has N,= 10° cm’ and Ny = 10"7 cm®. Determine: (a) Buit-in potential 2] (b) Depletion width (x) (2) (c) x, and xp [2] 14. Draw the C-V (1/C? versus V) characteristics of a P+N junction. Mention what are the parameters can be extracted from the graph. 2] List of constants: k= 8.62 x 10° eV/K AtT=300K kT=0.0259 eV 678.854 x 10" F/em e (Si) q= 1.6 x10%C nj, (Si)= 1. 480 cm’/V-s Nc(SiF 2.8 x 10"? em at T= 300K 1350 cm?/V-s E,(Si)= 1.1 eVBIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE PILANI K.K BIRLA GOA CAMPUS FIRST SEMESTER (2011-12) Comprehensive Examinations Physics and Modeling of Microclectronics Devices (MEL G631) Date: 05-12-2011 Time: 2 hours Maximum Marks: 55 Open Book PART-B Instructions: (i) Answer All questions. (ii) Any required data not explicitly given, may be suitably assumed and stated. Qi a2. Q3. Qs. Q6. (a) Calculate the small-signal capacitance at zero de bias and at 300K for an ideal Schottky barrier between platinum (work function 5.3 eV) and silicon doped with Ng = 10'° cm”. The area of the Schottky diode is 10° om’. (b) Calculate the reverse bias at which the capacitance is reduced by 25 % from its zero- bias value. A Ge p-n junction diode has Ny=2 «10"° cm® on the n-side and N.=3 x10" em® on the p-side. Calculate the forward voltage at which the injected hole concentration at the edge of the depletion region on the n-side becomes equal to the majority carrier concentration. Assuming T=300K, D;=42 om? sec", and 1,= 3 x 10” sec, calculate the current density at this voltage Calculate the saturation current density in an abrupt junction having data like: Np=10%/m’, Na= 10%/m?, D,= 3.4x10° m/s, Dp= 1.2 x 10° m/s, L,=7.1 x 10% m, L,=3.5 x 10%m, n= 1.5 x10'%/m*. 7) . The slope of a 1/C? versus V plot of P+N junction is 2 x10 F? V", the intercept is 0.84 V and the area of the PN junction is 1 um. Find the lighter doping concentration and the heavier doping concentration. If the intercept data has small experimental error of 6OmV, what is the effect on Nyand Ny? 7 Calculate the V; of a Si P-channel MOS transistor for an n‘ polysilicon gate with silicon oxide thickness = 50 A, Na = 1 x 10" cm® and a fixed charge of 2 x10'° q C/cm’. Is it enhancement or depletion mode device? What B dose is required to change the V; to OV? Assume a shallow B implant. 7) Interpret the measured Vsg dependence on oxide thickness in Fig 1. It is known that the gate electrode is N+ poly-Si. What is the charge stored in the oxide layer and the type of substrate material? (7) 10 nm 20 nm 30 nm 0.- > ox -0.15V 03V Vee Fig 1.@7. For an n-channel MOSFET with a gate oxide thickness of 10 nm, Vr = 0.6 V, and 2-25 um, L = 1 um, Calculate the drain current at Vq = 5 V and Vp = 0.1 V. Repeat for Ve= 3V and Vo=5 V. Discuss what happens for Vp = 7 V. Assume an electron channel mobility of y1= 200 cm*/V-s. mI 8, Consider an n-channel MOSFET with parameters L= 1.25 um, us = 650 ents, Cy:= 6.9 « 10% Flom, and Vr = 0.65 V. Design the channel width such that lo(sat) = 4 mA for Vos= SV. 3]