SEMICONDUCTOR IRF150 Series RoHS

RoHS
Nell High Power Products
N-Channel Power MOSFET
42A, 100Volts

DESCRIPTION
D
The Nell IRF150 is a three-terminal silicon device
with current conduction capability of 42A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 100V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as G
G D
switched mode power supplies, DC to DC converters, D S
motor control circuits, UPS and general purpose S TO-3PB TO-247AB
switching applications. (IRF150B) (IRF150C)
D (Drain)

FEATURES
RDS(ON) = 0.055Ω @ VGS = 10V
G
Ultra low gate charge(110nC Max.) (Gate)

Low reverse transfer capacitance

(C RSS = 230pF typical) S (Source)

Fast switching capability

100% avalanche energy specified PRODUCT SUMMARY
Improved dv/dt capability ID (A) 42
175°C operation temperature VDSS (V) 100
RDS(ON) (Ω) 0.055 @ V GS = 10V
QG(nC) max. 110

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 100
V DGR Drain to Gate voltage R GS =20KΩ 100 V

V GS Gate to Source voltage ±20

T C =25°C 42
ID Continuous Drain Current (V GS =10V)
T C =100°C 30
A
I DM Pulsed Drain current(Note 1) 160
I AR Avalanche current(Note 1) 22

E AR Repetitive avalanche energy(Note 1) l AR =22A, R GS =50Ω, V GS =10V 16

mJ
E AS Single pulse avalanche energy(Note 2) l AS =22A, L =1.7mH 420

dv/dt Peak diode recovery dv/dt(Note 3) 5.0 V /ns

Total power dissipation T C =25°C 160 W

PD
Derate above 25 ° C 1.1 W /°C

TJ Operation junction temperature -55 to 175

T STG Storage temperature -55 to 175 ºC

TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300

Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)

Note: 1. Repetitive rating: pulse width limited by junction temperature.

2 . l AS =22 A, L =1.7 mH , V DD =50 V , R G =25 Ω , starting T J =25 °C.
3 . I SD ≤ 22 A, di/dt ≤ 180 A/µs, V DD ≤ V (BR)DSS , starting T J < 150 °C.

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 SEMICONDUCTOR IRF150 Series RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
Rth(j-c) Thermal resistance, junction to case 0.95
Rth(c-s) Thermal resistance, case to heat sink 0.24 ºC/W
Rth(j-a) Thermal resistance, junction to ambient 40

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT

STATIC

V(BR)DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V 100 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 1mA, V DS =V GS 0.11 V/ºC

V DS =100V, V GS =0V T C = 25°C 25.0

I DSS Drain to source leakage current μA
V DS =80V, V GS =0V T C =125°C 250

Gate to source forward leakage current V GS = 20V, V DS = 0V 100

I GSS nA
Gate to source reverse leakage current V GS = -20V, V DS = 0V -100
R DS(ON) Static drain to source on-state resistance I D = 25A, V GS = 10V 0.055 Ω
V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2.0 4.0 V
g fs Forward transconductance V DS = 25V, l D = 25A 13 S

DYNAMIC

C ISS Input capacitance 1900

C OSS Output capacitance V DS = 25V, V GS = 0V, f =1MHz 450 pF

C RSS Reverse transfer capacitance 230

t d(ON) Turn-on delay time 11
V DD = 50V, V GS = 10V
tr Rise time 56
I D = 22A, R G = 3.6Ω, R D = 2.9Ω ns
t d(OFF) Turn-off delay time (Note1,2) 45

tf Fall time 40

QG Total gate charge 110

V DD = 80V, V GS = 10V
Q GS Gate to source charge 15 nC
I D = 22A, (Note1,2)
Q GD Gate to drain charge (Miller charge) 58
LD Internal drain inductance 5
Between lead, 6mm(0.25”) form
package and center of die contact nH
LS Internal source inductance 13

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
VSD Diode forward voltage I SD = 42A, V GS = 0V 2.5 V
Is (Is D ) Continuous source to drain current Integral reverse P-N junction 42
diode in the MOSFET
D (Drain)

A
I SM Pulsed source current 160
G
(Gate)

S (Source)

t rr Reverse recovery time I SD = 42A, V GS = 0V, 220 330 ns

dI F /dt = 100A/µs
Q rr Reverse recovery charge 1.9 2.9 μC

Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.

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 SEMICONDUCTOR IRF150 Series RoHS
RoHS
Nell High Power Products

ORDERING INFORMATION SCHEME

IRF 150 B

MOSFET series
N-Channel,IRF series

Current and Voltage rating, ID & VDS

42A / 100V

Package type
B = TO-3PB
C = TO-247AB

■ TYPICAL CHARACTERISTICS
Fig.2 Typical output characteristics,
Fig.1 Typical output characteristics, T C =175°C
T C =25°C
1000 1000
V GS V GS
Top: 15V Top: 15V
10V 10V
8V 8V
7V 7V
Drain Current, I D (A)
Drain Current, l D (A)

6V 6V
5.5V 5.5V
100 5V 100 5V
Bottorm: 4.5V Bottorm: 4.5V

10 10 4.5V

4.5V
Note:
Note:
1. 20µs Pulse Test
1. 20µs Pulse Test
2. T C = 175°C
2. T C = 25°C
1 1
0.1 1 10 100 0.1 1 10 100

Drain-Source voltage, V DS (V) Drain-Source voltage, V DS (V)

Fig.4 Normalized On-Resistance vs. Temperature

Fig.3 Typical transfer characteristics

1000 3.0
Drain-Source On-Resistance,

2.5
R Ds(ON) (Normalized)
Drain current, l D (A)

100 T J =25 ºC 2.0

T J =175ºC
1.5

10 1.0

0.5 I D = 36A
V GS = 10V
1 0.0
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160

Gate-Source voltage, V GS (V) Junction temperature, T j (°C)

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 SEMICONDUCTOR IRF150 Series RoHS
RoHS
Nell High Power Products

Fig.5 Typical capacitance vs. Drain-to-Source Fig.6 Typical source-drain diode forward
voltage voltage

3500 1000
V GS = 0V, f = 1MHz
C iss = C gs +C gd ( C ds shorted )

Reverse drain current,I SD (A)

3000 C oss = C ds +C gd
C rss = C gd
100
Capacitance (pF)

2500

2000 C iss
10
1500

1000
1
C oss
500
C rss
V GS = 0V
0 0.1
10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1

Drain- Source voltage, V SD (V) Source- Drain voltage, V SD (V)

Fig.7 Typical gate charge vs. gate-to-source Fig.8 Maximum safe operating area
voltage

20 1000
Operation in This Area is Limited by R DS(ON)
Gate-Source voltage, V GS (V)

V DS = 80V
16 V DS = 50V
Drain current, l D (A)

V DS = 20V 100 10µs

12

100µs

8
10
1ms
Note:
4 1. T C = 25°C
10ms
I D = 22 A 2. T J = 175°C
3. Single Pulse
0 1
0 20 40 60 80 100 120 1 10 100 1000

Total gate charge, Q G (nC) Drain-source voltage, V DS (V)

Fig.9 Maximum drain current vs.

Case temperature

50

40
Drain current, l D (A)

30

20

10

0
25 50 75 100 125 150 175

Case temperature, T C (°C)

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 SEMICONDUCTOR IRF150 Series RoHS
RoHS
Nell High Power Products

Fig.10 Maximum effective transient thermal impedance,

Junction-to-Case
Thermal response R th(J-C) (t)

10

1
D ~ 0.5
PDM

0.2 t1

0.1 0.1 t2
0.05 Single pulse
(Thermal response) Notes:
0.02 1. Duty factor, D = t1/ t2
0.01
2. Peak TJ = PDM * Rth(j-c) +TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1

Rectangular pulse duration, t 1 (S)

Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms

RD
V DS
V DS
V GS 90%

RG D.U.T. +
- V DD

10V 10%
Pulse width ≤ 1µs V GS
Duty Factor ≤ 0.1%
t d(ON) t d(OFF)
tR
tF

Fig.12a. Unclamped lnductive test circuit Fig.12b. Unclamped lnductive waveforms

15V

BV DSS

DRIVER l AS
L
V DS

l D(t)
RG D.U.T. V DS(t)
+
V V DD
- DD
l AS A
20V

tP 0.01Ω
Time
tp

Vary t p to obtain required I AS

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 SEMICONDUCTOR IRF150 Series RoHS
RoHS
Nell High Power Products

Fig.12c. Maximum avalanche energy vs.

Drain current

1000
lD

Single pulse energy, E AS (mJ)

TOP 9.0A
800 16A
BOTTOM 22A

600

400

200

0
25 50 75 100 125 150 175

Starting Junction temperature, T J (°C)

Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit

Current Regulator
Same Type as D.U.T.
V GS

50KΩ
QG
12V 0.2µF
10V
0.3µF

Q GD
+
Q GS V DS
D.U.T. -

V GS

3mA

RG RD
Charge
Current Sampling Resistors

Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET

Driver Gate Drive

D.U.T. Period D=
P.W.
+ Circuit Layout Considerations P.W. Period
• Low Stray lnductance
• Ground Plane VGS=10V *
• Low Leakage lnductance
Current Transformer
-
D.U.T. I SD Waveform
+
Reverse
Recovery Body Diode Forward
Current Current
- + di/dt
-
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
• dv/dt controlled by R G Voltage
RG + Body Diode Forward Drop
• Driver same type as D.U.T.
• l SD controlled by Duty Factor " D " V DD Inductor Curent
-
• D.U.T. -Device Under Test
Ripple ≤ 5% ISD

*V GS = 5V for Logic Level Devices and 3V for drive devices

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 SEMICONDUCTOR IRF150 Series RoHS
RoHS
Nell High Power Products

TO-3PB

5.0 ±0 . 2
15.6±0.4 4.8±0.2

2.0

1.8
9.6 2.0±0.1

19.9±0.3

4.0 Φ3.2 ± 0,1

2
20.0 min

4.0 max

3
+0.2 +0.2
1.05 -0.1 0.65 -0.1

5.45±0.1 5.45±0.1 1.4

G D S

D (Drain)

1 2 3

G
(Gate)

All dimensions in millimeters(inches) S (Source)

TO-247AB

4.69 (0.185)
15.49 (0.610) 5.31 (0.209)
16.26 (0.640) 1.49 (0.059)
2.49 (0.098)
5.38 (0.212)
16.15 (0.242)
6.20 (0.244)
Drain

20.80 (0.819)
21.46 (0.845)
3.55 (0.138)
3.81 (0.150)

G D S
2.87 (0.113)
4.50 (0.177)Max
3.12 (0.123)
1.65 (0.065) 0.40 (0.016)
(TYP.)
19.81 (0.780) 2.13 (0.084) 0.79 (0.031)
20.32 (0.800)
1.01 (0.040)
1.40 (0.055)
(TYP.)

2.21 (0.087)
5.45 (0.215) 5.45 (0.215) 2.59 (0.102)

D (Drain)

G
(Gate)
All dimensions in millimeters(inches)
S (Source)

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