Department of Electronics and Communication Engineering

Semester/Class: III Semester B.E. ECE

Course Code & Title: EC8392 Digital Electronics

UNIT V – MEMORY DEVICES AND DIGITAL INTEGRATED CIRCUITS

1. Define bit, byte and word.

The smallest unit of binary data is bit. Data are handled in a 8 bit unit called byte.
A complete unit of information is called a word which consists of one or more bytes.

2. Define a bus.
A bus is a set of conductive paths that serve to interconnect two or more functional
components of a system or several diverse systems.

3. What is meant by RAM?

RAM is Random Access Memory. It is a random access read/write memory. The data can
be read or written into from any selected address in any sequence.

4. Give the advantages of RAM. [DE- Nov/Dec-2013]

 Read and write the data.
 Data is accessed by using address of the memory location.
 Higher speed.

5. What is Read and Write operation in RAM? [DE-Nov/Dec-2015]

The Write operation stores data into a specified address into the memory and the Read
operation takes data out of a specified address in the memory.
Write operation
 Apply the binary address of the desired word to the address lines
 Apply the data bits that must be stored in memory to the data input lines
 Activate the write input.
Read Operation
 Apply the binary address of the desired word to the address lines
 Activate the Read input

6. How the memories are classified [DE- Nov/Dec-2012]

It is classified into two types:
 volatile – Random Access Memory
 non-volatile memory - Read Only Memory
1. Random Access Memory which can be read & written
• Static & Dynamic RAM
2. Read Only Memory which retains data
• PROM, EPROM, EEPROM, Flash memory

7. How many words can a 16x8 memory can store?

A 16x8 memory can store 16,384 words of eight bits each

8. Compare Static RAM and Dynamic RAM Cell [DE-Apr/May-2015,DPSD-May/June-2013]

 S.No. Static RAM Dynamic RAM
Dynamic RAM contains more
Static RAM contains less memory
1. memory cells as compared to static
cells per unit area.
RAM per unit area
Its access time is less hence faster Its access time is greater than static
2.
memories. RAMs.
Dynamic RAM stores the data as a
Static RAM consists of number of flip-
change on the capacitor. It consists
3. flops. Each flip-flop stores
of MOSFET and the capacitor for
one – bit.
each cell.
4. Refreshing Circuitry is not required. Refreshing Circuitry is required
5. Cost is more. Cost is less.
Low power consumption is the
6. Consumes more power than DRAM
advantage over SRAM

9. Draw the structure of the static RAM Cell [DE- May/June-2014]

10. What are the advantages of Static RAM compared to Dynamic RAM [DE-Apr/May-2010]
Static RAM:
 Access time is less.
 Fast operation.
Dynamic Ram
 It consumes less power.
 Cost is low.

11. List the two types of SRAM.

Asynchronous SRAMs and Synhronous Burst SRAMs

12. List the basic types of DRAMs.

Fast Page Mode DRAM, Extended Data Out DRAM(EDO DRAM),Burst EDO DRAM and
Synchronous DRAM.

13. What is access time and cycle time of memory [DE- Nov/Dec-2010]
Access Time: Time required to select the word and Read it
Cycle Time: Time required to complete the write operation

14. What is the technique adopted by DRAMs.

DRAMs use a technique called address multiplexing to reduce the number of address lines.
15. Give the difference between RAM and ROM
 Sl.No. EEPROM Flash Memory
1 Lower Packaging Density Higher Packaging Density
2 Higher cost per bit Lower cost per bit
3 Consumes higher power Consumes less power
4 Erasing is done individual byte wise Erasing is done in one bulk operation

Erasing and reprogramming of Erasing and reprogramming of flash

5
EPROM is slower memory is faster

16. What is meant by ROM?

 A read only memory (ROM) is a device that includes both the decoder and the OR gates
within a single IC package.
 ROMs have only Read Operation. ROMs are Non-volatile memories. They retain stored data
even if power is turned off. ROMs are available in both bipolar and MOS technologies.
 It consists of n input lines and m output lines. Each bit combination of the input variables is
called an address. Each bit combination that comes out of the output lines is called a word.
The number of distinct addresses possible with n input variables is 2n.
 Types-PROM, EPROM, EEPROM

17. What are the different types of ROM

1. Masked ROM.
2. PROM-Programmable Read only Memory
3. EPROM-Erasable Programmable Read only memory.
4. EEPROM-Electrically Erasable Programmable Read only Memory.

18. Give the difference between RAM and ROM [DE- Nov/Dec-2011]
Sl.No. RAM ROM
1. RAMs have both Read and write ROMs have only Read Operation
Capability
2. RAMs are volatile memories ROMs are Non-volatile memories
3. They lose stored data when the power is They retain stored data even if power
turned off is turned off
4. RAMs are available in both bipolar and ROMs are available in both bipolar
MOS technologies and MOS technologies
5. Types-SRAM,DRAM Types-PROM,EPROM,EEPROM

19. Implement a 2-bit multiplier using ROM [DE- Nov/Dec-2010]

20. What is volatile and Non-volatile memory? [DE- Nov/Dec-2013]

  The memory which cannot hold the data when power is turned off is known as volatile
memory. Eg. RAM
 The memory which can hold the data when power is turned off is known as non-volatile
memory. Eg. ROM

21. Give the advantages of ROM

 They are non-volatile.
 They are cheaper than RAM.
 They are static and do not refreshing.
 They are more reliable than RAM as their circuit is simple.
 They are available in longer sizes than RAM.
 They are easier to interface than RAM

22. Draw the logic diagram of a memory cell. [DE- Nov/Dec-2007]

23. Draw the logic diagram of static RAM Cell and Bipolar RAM Cell [DE- Nov/Dec-2012]

24. Explain PROM.

PROM (Programmable Read Only Memory)
It allows user to store data or program. It consists of a set of fixed AND Gates Connected to
a decoder and a programmable OR array. PROMs use the fuses with material like nichrome
and polycrystalline. The user can blow these fuses by passing around 20 to 50 mA of current
for the period 5 to 20μs.The blowing of fuses is called programming of ROM. The PROMs are
one time programmable. Once programmed, the information is stored permanent.

25. Explain EPROM.

EPROM(Erasable Programmable Read Only Memory)
EPROM use MOS circuitry. They store 1’s and 0’s as a packet of charge in a buried layer of
the IC chip. We can erase the stored data in the EPROMs by exposing the chip to ultraviolet
light via its quartz window for 15 to 20 minutes. It is not possible to erase selective
information. The chip can be reprogrammed.
26. Explain EEPROM.
 EEPROM(Electrically Erasable Programmable Read Only Memory)
EEPROM also use MOS circuitry. Data is stored as charge or no charge on an insulated
layer or an insulated floating gate in the device. EEPROM allows selective erasing at the
register level rather than erasing all the information since the information can be changed by
using electrical signals.

27. Implement the Exclusive-OR function using ROM [DE-Apr/May-2011]

 It Can implement multi-input/multi-output logic functions inside of ROM.
 Data outputs are the logic functions and the address lines are the logic function inputs.
 We create a ROM Table to store the logic functions.
 When an input (or address) is presented, the value stored in the specified memory location
appears at the data outputs.
 Each data output represents the correct value for its logic function

28. Define address and word

In a ROM, each bit combination of the input variable is called on address. Each bit
combination that comes out of the output lines is called a word.

29. Define Cache memory.

It is a relatively small, high-speed memory that can store the most recently used instructions
or data from larger but slower main memory.

30. What is mask - programmable?

With a mask programmable PLA, the user must submit a PLA program table to the
manufacturer.

31. Define PLD.

Programmable Logic Devices consist of a large array of AND gates and OR gates that
Can be programmed to achieve specific logic functions.

32. List the advantages of PLDs [DE- May/June-2014]

 low and fixed (two gate) propagation delays (typically down to 5 ns),
 simple and low-cost (free),
 Saves on number of chips used.
 Saves on different types of chips used.
 Shortens the design process.
 Creates design flexibility.

33. What are the different types of Programmable Logic Devices [DE- May/June-2013]
1. Programmable Read Only Memory (PROM)
2. Programmable logic Array (PLA)
3. Programmable Array Logic (PAL)

34. What is meant by memory expansion? Mention its limit [DE-Apr/May-2010]

The memory expansion can be achieved in two ways: by expanding word size and
expanding memory capacity.
Limitations:
1. Memory capacity upto 16 Mbytes.
2. 24 address lines and 16 data lines.
35. Distinguish between PAL and PLA [DE- May/June-2013,Apr/May-2011,Nov/Dec-
2009,DPSD- Nov/Dec-2011]
PAL PLA
AND arrays are programmable OR arrays Both AND and OR arrays are
are fixed programmable
Cheaper than PLA Complex than PAL
Simpler than PLA Costlier than PAL

36. What is PAL? How it differs from PLA? [DE- Nov/Dec-2009]

 PLA is programmable logic array while PAL is Programmable Array Logic.
 PLA is a kind of programmable logic device used to implement combinational logic circuit.
It has Programmable AND Gate linked with Programmable OR Gate.
 PAL is an combinational PLD that was developed to overcome certain disadvantage of
PLA. PLA shows longer delay due to additional fusible links which results from using two
programmable array and increase circuit complexity. Thus, PAL is used which is less
complex and fast to implement. PAL consists of programmable AND linked with fixed OR.

37. What is programmable logic array? How does it differ from ROM? [DPSD- Nov/Dec-
2009,2015]
In some cases the number of don’t care conditions is excessive, it is more economical to
use a second type of LSI component called a PLA. A PLA is similar to a ROM in concept;
however it does not provide full decoding of the variables and does not generates all the
minterms as in the ROM.

38. What is a combinational PLD [DPSD-Nov/Dec-2012, DE- Nov/Dec-2007]

The PROM is a Combinational Programmable logic Device (Combinational PLD). A
Combinational PLD is an integrated circuit with programmable gates divided into an And array
and OR array to provide an AND-OR Sum of Product Implementation. There are three major
types of Combinational PLDs and they differ in the placement of the Programmable
connections in the AND-OR array. The types of PLDs are
PROM: Fixed AND Array and Programmable OR Array
PAL: Programmable AND Array and Fixed OR Array
PLA: Both AND and OR Array are Programmable
39. Mention few applications of PLA and PAL. [April/May-2012]
 Implement combinational circuits
 Implement sequential circuits
 Code converters
 Microprocessor based systems

40. Why was PAL developed?

It is a PLD that was developed to overcome certain disadvantages of PLA, such as
longer delays due to additional fusible links that result from using two programmable arrays and
more circuit complexity.

41. Define GAL.

GAL is Generic Array Logic. GAL consists of a programmable AND array and a fixed
OR array with output logic.
42. Why the input variables to a PAL are buffered
The input variables to a PAL are buffered to prevent loading by the large number of AND
gate inputs to which available or its complement can be connected.

43. What is CPLD?

CPLDs are Complex Programmable Logic Devices. They are larger versions of PLDs with a
centralized internal interconnect matrix used to connect the device macro cells together.
44. What is FPGA?
Field Programmable Gate Array(FPGA) is an integrated circuit which consists of an array of
logic cells with programmable interconnections. The logic cells and interconnections can be
programmed by user for the desired applications. Hardware Description Language is used to define
the desired logic operation.

45. Define address of a memory and Capacity of a memory.

The location of a unit of data in a memory is called address. It is the total number of data
units that can be stored.

46. Give the feature of UV EPROM.

UV EPROM is electrically programmable by the user, but the store data must be erased by
exposure to ultra violet light over a period of several minutes.

47. Give the feature of flash memory.

The ideal memory has high storage capacity, non-volatility; in-system read and write
capability, comparatively fast operation. The traditional memory technologies such as ROM,
PROM, EEPROM individually exhibits one of these characteristics, but no single technology has
all of them except the flash memory.

48. What are Flash memories?

They are high density read/write memories that are non-volatile, which means data can be
stored indefinitely without power.

49. List the three major operations in a flash memory.

Programming, Read and Erase operation

50. What is a FIFO memory?

The term FIFO refers to the basic operation of this type of memory in which the first data
bit written into the memory is to first to be read out.

51. Compare PROM,PLA and PAL

S.No. PROM PLA PAL
Programmable read only
1 Programmable Logic Array Programmable Array Logic
Memory
Programmable AND Array & Programmable AND Array &
2 Fixed AND Array
Programmable OR Array Fixed OR Array
AND Array can be
All minterms are AND Array can be programmed
3 programmed to get desired
decoded to get desired minterms
minterms
Only Boolean functions
Any Boolean function in SOP Any Boolean function in SOP
4 is standard SOP form
form can be implemented form can be implemented
can be implemented
5 Cheaper Costlier than PAL and PROM Cheaper
6 Simple to Use Complex than PAL and PROM Simple to Use
52. What is the advantage of using Schottky TTL gate? [DE-May/June-2007]
 Very Fast
 Low power dissipation
 Easily compatible with other ICs
 Low output impedance
53. Write down fan in and fan out of a standard TTL IC. [DE-May/June-2006]
Fan in - Fan in is the number of inputs connected to the gate without any degradation in the
voltage level.
Fan-out - Fan out specifies the number of standard loads that the output of the gate can
drive without impairment of its normal operation

54. Give the classification of logic families

Bipolar Unipolar

Saturated Non Saturated PMOS

NMOS
CMOS
RTL SchottkyTTL
ECL DTL
IIC
TTL

55. Mention the classification of saturated bipolar logic families.

The bipolar logic family is classified as follows:
RTL- Resistor Transistor Logic
DTL- Diode Transistor logic
I2L- Integrated Injection Logic
TTL- Transistor Transistor Logic
ECL- Emitter Coupled Logic

56. Mention the important characteristics of digital IC’s?

a) Fan out b) Power dissipation c) Propagation Delay d) Noise Margin
e) Fan In f) Operating temperature g) Power supply requirements

57. Define power dissipation?

Power dissipation is measure of power consumed by the gate when fully driven by all its inputs.

58. What is High Threshold Logic?

Some digital circuits operate in environments, which produce very high noise signals. For
operation in such surroundings there is available a type of DTL gate which possesses a high
threshold to noise immunity. This type of gate is called HTL logic or High Threshold Logic.

59. What are the types of TTL logic?

1. Open collector output 2. Totem-Pole Output 3. Tri-state output.

60. List the different versions of TTL

1. TTL (Standard.TTL) 2. LTTL (Low Power TTL)
3. HTTL (High Speed TTL) 4. STTL (Schottky TTL)
5. LSTTL (Low power Schottky TTL)
61. State advantages and disadvantages of TTL
Adv: Easily compatible with other ICs Low output impedance
Disadv: Wired output capability is possible only with tristate and open collector types Special
circuits in Circuit layout and system design are required.

62. What is depletion mode operation MOS?

If the channel is initially doped lightly with p-type impurity a conducting channel exists at zero
gate voltage and the device is said to operate in depletion mode.

63. What is enhancement mode operation of MOS?

If the region beneath the gate is left initially uncharged the gate field must induce a channel
before current can flow. Thus the gate voltage enhances the channel current and such a device is
said to operate in the enhancement mode.

64. Mention the characteristics of MOS transistor?

1. The n- channel MOS conducts when its gate- to- source voltage is positive.
2. The p- channel MOS conducts when its gate- to- source voltage is negative
3. Either type of device is turned off if its gate- to- source voltage is zero.