USN

4 C B 1 8 E C 0
CANARA ENGINEERING COLLEGE
Department of Electronics and Communication Engineering
III Semester B.E. Degree Third-IA Test, Nov 2019
Time: 90 Min ELECTRONIC DEVICES 18EC33 Max. Marks: 50

Note: Answer ONE full question from each part. each carries equal marks

PART - A
1 a Explain The basic P-N Junction fabrication with all steps using required 20 M
diagram.

b Define Moore’s law. What is advantage over discrete circuits. Explain 10 M

different category & Evolution of Integrated Circuits

OR
2 a Explain The basic self-aligned twin well process fabrication with all steps 20 M
using required diagram.
b Define integrated circuit Describe revolutionary developments of 10 M
integrated circuit technology the fact that integrated Other Circuit
elements

PART – B
3 a discuss the basic operation of the n channel E-MOSFET with 20 M
characteristics and equation.

OR
4 a Derive the capacitor–voltage characteristics of the MOS Capacitor and 20 M
explain operation.

Q. No. 1a 1b 2a 2b 3a 4a

CO Mapping CO5 CO5 CO5 CO5 CO4 CO4

RBT Level 2 1 2 1 2 2

Faculty In-charge Domain Head HOD,ECE