STF28N60M2,

STFI28N60M2
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220FP, I2PAKFP packages
Datasheet - production data

Features
Order codes VDS @ TJmax RDS(on) max ID
STF28N60M2
650 V 0.150 Ω 22 A
STFI28N60M2

2
3
• Extremely low gate charge
1

TO-220FP 1
• Lower RDS(on) x area vs previous generation
2
3
2
• Low gate input resistance
I PAKFP (TO-281)
• 100% avalanche tested
• Zener-protected

Applications
Figure 1. Internal schematic diagram
• Switching applications
• LCC converters, resonant converters

Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1

Table 1. Device summary

Order codes Marking Package Packaging

STF28N60M2 TO-220FP
28N60M2 Tube
STFI28N60M2 I2PAKFP (TO-281)

January 2014 DocID025255 Rev 2 1/14

This is information on a product in full production. www.st.com
Contents STF28N60M2, STFI28N60M2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14 DocID025255 Rev 2

STF28N60M2, STFI28N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ± 25 V

ID (1)
Drain current (continuous) at TC = 25 °C 22 A
(1)
ID Drain current (continuous) at TC = 100 °C 14 A
IDM (2) Drain current (pulsed) 88(1) A
PTOT Total dissipation at TC = 25 °C 30 W
dv/dt (3) Peak diode recovery voltage slope 15 V/ns
dv/dt(4) MOSFET dv/dt ruggedness 50 V/ns
Insulation withstand voltage (RMS) from
VISO all three leads to external heat sink 2500 V
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
- 55 to 150 °C
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 22 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD= 400 V.
4. VDS ≤ 480 V

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 4.17 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not repetitive (pulse width

IAR 4 A
limited by Tjmax)
Single pulse avalanche energy (starting Tj=25°C,
EAS 2200 mJ
ID= IAR; VDD=50)

DocID025255 Rev 2 3/14

14
Electrical characteristics STF28N60M2, STFI28N60M2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 600 V
breakdown voltage

Zero gate voltage VDS = 600 V 1 μA

IDSS
drain current (VGS = 0) VDS = 600 V, TC=125 °C 100 μA
Gate-body leakage
IGSS VGS = ± 25 V ±10 μA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2 3 4 V
Static drain-source
RDS(on) VGS = 10 V, ID = 11 A 0.135 0.150 Ω
on-resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 1440 - pF

Coss Output capacitance VDS = 100 V, f = 1 MHz, - 70 - pF
VGS = 0
Reverse transfer
Crss - 2 - pF
capacitance
Equivalent output
Coss eq.(1) VDS = 0 to 480 V, VGS = 0 - 104 - pF
capacitance
Intrinsic gate
RG f = 1 MHz open drain - 5.5 - Ω
resistance
Qg Total gate charge VDD = 480 V, ID = 22 A, - 36 - nC
Qgs Gate-source charge VGS = 10 V - 7.2 - nC
Qgd Gate-drain charge (see Figure 15) - 16 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 14.5 - ns

tr Rise time VDD = 300 V, ID = 11 A, - 7.2 - ns
RG = 4.7 Ω, VGS = 10 V
td(off) Turn-off delay time - 100 - ns
(see Figure 14 and Figure 19)
tf Fall time - 8 - ns

4/14 DocID025255 Rev 2

STF28N60M2, STFI28N60M2 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 22 A

ISDM (1) Source-drain current (pulsed) - 88 A
VSD (2)
Forward on voltage ISD = 22 A, VGS = 0 - 1.6 V
trr Reverse recovery time - 350 ns
ISD = 22 A, di/dt = 100 A/μs
Qrr Reverse recovery charge - 4.7 μC
VDD = 60 V (see Figure 19)
IRRM Reverse recovery current - 27 A
trr Reverse recovery time ISD = 22 A, di/dt = 100 A/μs - 451 ns
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 6.5 μC
IRRM Reverse recovery current (see Figure 19) - 29 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

DocID025255 Rev 2 5/14

14
Electrical characteristics STF28N60M2, STFI28N60M2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
AM17988v1
ID
(A)
is
ea )
a r S(on
s
10 hi
t R
D
in x
n ma 10µs
a tio by
r
pe ed
O imit
L 100µs
1 1ms

10ms

0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1 1 10 100 VDS(V)

Figure 4. Output characteristics Figure 5. Transfer characteristics

AM17989v1 AM17990v1
ID (A) ID
(A)
VGS=7, 8, 9, 10V VDS=18V
50 50
6V
40 40

30 30
5V
20 20

10 10
4V
0 0
0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

AM17991v1 AM17992v1
VGS VDS RDS(on)
(V) (V) (Ω)
VDD=480V VGS=10V
12 0.142
VDS ID=22A 500

10 0.140
400
8 0.138
300
6 0.136
200
4 0.134

2 100 0.132

0 0 0.130
0 10 20 30 40 Qg(nC) 0 4 8 12 16 20 ID(A)

6/14 DocID025255 Rev 2

STF28N60M2, STFI28N60M2 Electrical characteristics

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

AM17993v1 AM17994v1
C Eoss
(pF) (µJ)

10000 10

8
Ciss
1000

6
100
Coss 4

10
2
Crss
1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)

Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs
temperature temperature
VGS(th) AM17995v1 AM17996v1
RDS(on)
(norm) (norm)
ID=250µA ID=11A
2.3
1.1
2.1
1.9
1.0
1.7
1.5
0.9
1.3
1.1
0.8 0.9
0.7
0.7 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)

Figure 12. Normalized VDS vs temperature Figure 13. Source-drain diode forward
characteristics
AM117997v1 AM17998v1
VDS VSD (V)
(norm)
1.11 ID=1mA 1.4

1.2
1.07 TJ=-50°C
1
1.03
0.8
TJ=25°C
0.99 0.6 TJ=150°C
0.4
0.95
0.2

0.91 0
-50 -25 0 25 50 75 100 TJ(°C) 0 4 8 12 16 20 ISD(A)

DocID025255 Rev 2 7/14

14
Test circuits STF28N60M2, STFI28N60M2

3 Test circuits

Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
9%5'66 ton toff
tr tdoff tf
9' tdon

90% 90%
,'0
10%
,' 10% VDS
0

9'' 9'' 90%

VGS

$0Y 0 10% AM01473v1

8/14 DocID025255 Rev 2

STF28N60M2, STFI28N60M2 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

DocID025255 Rev 2 9/14

14
Package mechanical data STF28N60M2, STFI28N60M2

Figure 20. TO-220FP drawing

7012510_Rev_K_B

10/14 DocID025255 Rev 2

STF28N60M2, STFI28N60M2 Package mechanical data

Table 9. TO-220FP mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

DocID025255 Rev 2 11/14

14
Package mechanical data STF28N60M2, STFI28N60M2

Figure 21. I2PAKFP (TO-281) drawing

ĆUHY$

Table 10. I2PAKFP (TO-281) mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
D1 0.65 0.85
E 0.45 0.70
F 0.75 1.00
F1 1.20
G 4.95 - 5.20
H 10.00 10.40
L1 21.00 23.00
L2 13.20 14.10
L3 10.55 10.85
L4 2.70 3.20
L5 0.85 1.25
L6 7.30 7.50

12/14 DocID025255 Rev 2

STF28N60M2, STFI28N60M2 Revision history

5 Revision history

Table 11. Document revision history

Date Revision Changes

13-Sep-2013 1 First release.

– Added: I2PAKFP package
– Modified: title, ID value and features in cover page
– Modified: ID, IDM and PTOT values in Table 2
– Modified: note 3
– Modified: Rthj-case value in Table 3
29-Jan-2014 2 – Modified: the entire typical values in Table 4, 6, 7 and 8
– Modified: RDS(on) typical value
– Modified: Figure 7 and 8
– Updated: Table 9 and Figure 14
– Added: Section 4: Package mechanical data
– Minor text changes

DocID025255 Rev 2 13/14

14
 STF28N60M2, STFI28N60M2

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2014 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com

14/14 DocID025255 Rev 2

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

STMicroelectronics:
STF28N60M2