IYO COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE 10-92F THE BC413, BC414, BC415, BC4l6 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR AP LOW NOISE PREAMPLIFIER APPLICATIONS, THE BC413, BC414 ARE NPN AND ARE COMPLEMENTARY TO THE PNP BC415, BC416 RESPECTIVELY. ~~ CEB BC413 BC414 BC415 BC4L6 ABSOLUTE MAXIMUM RATINGS 'o197esi. vt ant carer rt wren (wen) (NPN) (PNP) (PNP) Collector-Base Voltage YeBo 45v SOV. a5v. SOV Collector-Bmitter Voltage VoEo 30V 450 35v 450 Britter-Base Voltage ‘VEBO ov Collector Current Ic 100mA, Total Power Dissipation @ Ta<259C Ptot 4 derate 2.4aW/9C abeve 25°C <:\ Operating Junction & Storage Temperature Tj, Tete -55 to 150°C a ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER sympoL | maw qv Max| unr] TEST CONDITIONS Collector-Base Breakdown Voltage BYCEO Ic=l0pA Ip0 BoAL3 45 v ‘BO414 50 i BCALS 45 v Bogs 50 v Collector-Buitter Breakdown Voltage | LVoR0 Ip=1OmA (Pulsed) Bed 30 v Tp=0 Bodld 45 ¥ BC415 35 v BoAL6 45 v [ini tter-Base Breakdown Voltage BEBO 5 o IgelOpA Ip0 lcoltector cutoff current ToBO 15] nA | You=30¥ IE-0 5 | pA | YoR-307 In-0 ‘BqW150°C lauitter Cutoff Current TBO 15 | a VeB-4¥ Ic=0 lcollector-Bnitter Saturation Voltage] Vox(sat) v To-10mk IB-0.5m} v Iq=100a4 TR-SmAk (Palsed) ey ee MICRO ELECTRONICS LTD. iein'ota't'e: sitter'cisitaaoiise “ctor FAX: 3-410321PARAMETER svmeot | van yp vax |onrr| res? CONDITIONS Collector-Baitter Knee Voltage | Vouk 0.3 0.6 |v | Ip=lOmA, Igevalue at which Tg=1lma Vog+1V Base-Bnitter Saturation Voltage | Ypu(sat) 0.92 v Ig+100mA IpeSmA(Pulsed) Base-Bnitter Voltage VBE 0.55 0.64 0.75| V | ce2mA Vozs5V 0.57 v | o=0etma Voa=5¥ current Gain-Bandwidth Product | fp 200 Miz | Igel0mA Vog=5¥ Collector-Base Capacitance cob WRRl0Y Tg=0 BC413, BC414 2.7 pr | folie BO415, BOAL6 3.2 pF Noise Figure 1F Ipe0.2mA Vop=-5 30413, BOALd 1.2 2.5 [4B | Rge2ka £=30H2-15KHa BC415, BCAL6 1.2 2.0 | ap Flicker Noise Voltage Referred to | En Tg-0.2mA YoE=5V Base 30413, BC4l4 00135 |pv | Roe2kn £-10H2-50H2 e415, Boa1s Oli [aw D.C, CURRENT GAIN (HFE) a? VCE=5V_ Ta=250C Ton ec EPE GROUP A HFE GROUP B EFE GROUP C | rep max MIN. TYP MAK MIN YP MAX 0,01mA | 40 100 100 170 100 290 ama [120 170 220 1so 300 460 380 520 800 100mA 100 160 270 hh - PARAMETERS AT I¢=2mA VeB-5V_f-1kHz TA=25°C Bre GROUP A | Hre GROUP B | BFE GROUP C | ee SYMBOL | sry mrp Max| MIN TYP Max | MEN yp Max | "TP Input Impedance hie 1.6 2.7 45/52 4.5 8.5| 6 8.7 15| Ka Voltage Feedback Ratio bre 15 2 3 xo snall Signal Current Gain | hee | 125 190 260] 240 330 500/450 580 900 loutput Admittance hoe 1830 30 60 60 n0| pe a