IRFB4410ZPbF

IRFS4410ZPbF
IRFSL4410ZPbF
Applications HEXFET® Power MOSFET
l High Efficiency Synchronous Rectification in SMPS
D
VDSS 100V
l Uninterruptible Power Supply
RDS(on) typ. 7.2m:
9.0m:
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G max.
S ID (Silicon Limited) 97A
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
D
Ruggedness D D
l Fully Characterized Capacitance and Avalanche
SOA
S S S
l Enhanced body diode dV/dt and dI/dt Capability D D D
G G G
l Lead-Free
l RoHS Compliant, Halogen-Free TO-220AB D2Pak TO-262
IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF

G D S
Gate Drain Source

Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRFB4410ZPbF TO-220 Tube 50 IRFB4410ZPbF
IRFSL4410ZPbF TO-262 Tube 50 IRFSL4410ZPbF
Tube 50 IRFS4410ZPbF
IRFS4410ZPbF D2Pak Tape and Reel Left 800 IRFS4410ZTRLPbF
Tape and Reel Right 800 IRFS4410ZTRRPbF

Absolute Maximum Ratings

Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 97
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 69 A
IDM Pulsed Drain Current c 390
PD @TC = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery e 16 V/ns
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw x
10lb in (1.1N m) x
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy d 242 mJ
IAR Avalanche Current See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy f mJ

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case j ––– 0.65
RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W
RθJA Junction-to-Ambient, TO-220 j ––– 62
RθJA Junction-to-Ambient (PCB Mount) , D2Pak ij ––– 40

1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 5mA c
RDS(on) Static Drain-to-Source On-Resistance ––– 7.2 9.0 mΩ VGS = 10V, ID = 58A f
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 150μA
IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Internal Gate Resistance ––– 0.70 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 140 ––– ––– S VDS = 10V, ID = 58A
Qg Total Gate Charge ––– 83 120 nC ID = 58A
Qgs Gate-to-Source Charge ––– 19 ––– VDS =50V
Qgd Gate-to-Drain ("Miller") Charge ––– 27 VGS = 10V f
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 56 ––– ID = 58A, VDS =0V, VGS = 10V f
td(on) Turn-On Delay Time ––– 16 ––– ns VDD = 65V
tr Rise Time ––– 52 ––– ID = 58A
td(off) Turn-Off Delay Time ––– 43 ––– RG =2.7Ω
tf Fall Time ––– 57 ––– VGS = 10V f
Ciss Input Capacitance ––– 4820 ––– pF VGS = 0V
Coss Output Capacitance ––– 340 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig.5
Coss eff. (ER) Effective Output Capacitance (Energy Related) h––– 420 ––– h
VGS = 0V, VDS = 0V to 80V , See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related) g ––– 690 ––– VGS = 0V, VDS = 0V to 80V g
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 97 A MOSFET symbol D

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– 390 A integral reverse G

(Body Diode)c p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 58A, VGS = 0V f
trr Reverse Recovery Time ––– 38 57 ns TJ = 25°C VR = 85V,
––– 46 69 TJ = 125°C IF = 58A
Qrr Reverse Recovery Charge ––– 53 80 nC TJ = 25°C di/dt = 100A/μs f
––– 82 120 TJ = 125°C
IRRM Reverse Recovery Current ––– 2.5 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.143mH
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
ƒ ISD ≤ 58A, di/dt ≤ 610A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.

2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
100 4.8V 100 4.8V
BOTTOM 4.5V BOTTOM 4.5V
4.5V

4.5V
10 10

≤60μs PULSE WIDTH ≤60μs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
VDS = 50V ID = 58A

RDS(on) , Drain-to-Source On Resistance

≤60μs PULSE WIDTH VGS = 10V
ID, Drain-to-Source Current (A)

100 2.0
(Normalized)

10 T J = 25°C 1.5
TJ = 175°C

1 1.0

0.1 0.5
2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

100000 12.0
VGS = 0V, f = 1 MHZ
ID= 58A
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VDS= 80V
10.0
VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS= 40V

VDS= 20V
C, Capacitance (pF)

10000 8.0
Ciss
6.0
Coss
1000 4.0
Crss

2.0

100 0.0
1 10 100 0 20 40 60 80 100
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100μsec
100 T J = 175°C
100 1msec

10 10msec
T J = 25°C DC

10
1
Tc = 25°C
Tj = 175°C
VGS = 0V
Single Pulse
0.1 1
0.0 0.5 1.0 1.5 2.0 2.5 0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area
Forward Voltage

V(BR)DSS , Drain-to-Source Breakdown Voltage (V)

100 125
Id = 5mA
120
80
115
ID, Drain Current (A)

60
110

40 105

100
20
95

0 90
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C) T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.0 1000
EAS , Single Pulse Avalanche Energy (mJ)

ID
1.8 900
TOP 6.4A
1.6 800 9.4A
1.4 BOTTOM 58A
700
1.2
Energy (μJ)

600
1.0 500
0.8 400
0.6 300
0.4 200
0.2 100
0.0 0
-10 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175

VDS, Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C)

Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent

4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

Thermal Response ( Z thJC ) °C/W

D = 0.50

0.20
0.1
0.10
R1 R2
0.05 R1 R2 Ri (°C/W) τi (sec)
τJ
τJ
τC
τ 0.237 0.000178
τ1 τ2
0.02 τ1 τ2 0.413 0.003772
0.01 0.01
Ci= τi/Ri
Ci i/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
Avalanche Current (A)

10 0.05
0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
150 Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1.0% Duty Cycle 1. Avalanche failures assumption:
ID = 58A Purely a thermal phenomenon and failure occurs at a temperature far in
EAR , Avalanche Energy (mJ)

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
100
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
50 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25 50 75 100 125 150 175
Iav = 2DT/ [1.3·BV·Zth]
Starting T J , Junction Temperature (°C) EAS (AR) = PD (ave)·tav

Fig 15. Maximum Avalanche Energy vs. Temperature

5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

4.5 20
I = 39A
F
V = 85V
R
VGS(th), Gate threshold Voltage (V)

4.0
TJ = 25°C _____

15 TJ = 125°C ----------
3.5

IRRM (A)
3.0
10
2.5

ID = 150μA
2.0
ID = 250μA 5
ID = 1.0mA
1.5
ID = 1.0A

1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 200 100 200 300 400 500 600 700
T J , Temperature ( °C ) dif/dt (A/μs)

Fig 16. Threshold Voltage vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt

20 400
IF = 58A I = 39A
F
V = 85V 350 V = 85V
R R
T = 25°C _____ TJ = 25°C _____
J
15 TJ = 125°C ---------- 300 TJ = 125°C ----------

250
IRRM (A)

Qrr (nC)

10 200

150

5 100

50

0 0
100 200 300 400 500 600 700 100 200 300 400 500 600 700
dif/dt (A/μs) dif/dt (A/μs)
Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt

450
I = 58A
F
400 V = 85V
R
TJ = 25°C _____
350 TJ = 125°C
----------
300
Qrr (nC)

250

200

150

100

50

0
100 200 300 400 500 600 700
dif/dt (A/μs)

Fig. 20 - Typical Stored Charge vs. dif/dt

6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
tp 0.01Ω I AS
Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms

LD
VDS
VDS
+
90%
VDD -

D.U.T 10%
VGS VGS
Second Pulse Width < 1μs
Duty Factor < 0.1%
td(on) tr td(off) tf

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Id
Vds

Vgs

L
VCC
DUT
0
Vgs(th)
1K
S
20K

Qgodr Qgd Qgs2 Qgs1

Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

RECTIFIER LOGO RECTIFIER LOGO

ASSEMBLY
FB4410Z
PYWW?
DATE CODE
P = LEAD-FREE
OR ASSEMBLY
FB4410Z
YWWP
DATE CODE
Y = LAST DIGIT OF YEAR
LOT CODE Y = LAST DIGIT OF YEAR LOT CODE WW = WORK WEEK
LC LC WW = WORK WEEK LC LC P = LEAD-FREE
? = ASSEMBLY SITE CODE

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

D2Pak Package Outline (Dimensions are shown in millimeters (inches))

D2Pak Part Marking Information

INTERNATIONAL INTERNATIONAL
RECTIFIER LOGO PART NUMBER RECTIFIER LOGO PART NUMBER

ASSEMBLY
IRFS4410Z
P YW W ?
OR ASSEMBLY
FS4410Z
YW WP
DATE CODE DATE CODE
LOT CODE LC LC LOT CODE LC LC
P = LEAD-FREE Y = LAST DIGIT OF YEAR
Y = LAST DIGIT OF YEAR WW = WORK WEEK
WW = WORK WEEK P = LEAD-FREE
? = ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

TO-262 Package Outline (Dimensions are shown in millimeters (inches))

TO-262 Part Marking Information

INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

RECTIFIER LOGO FSL4410Z
OR RECTIFIER LOGO FSL4410Z
ASSEMBLY PYWW? ASSEMBLY YWWP DATE CODE
DATE CODE
LOT CODE LOT CODE Y = LAST DIGIT OF YEAR
P = LEAD-FREE
LC LC Y = LAST DIGIT OF YEAR LC LC WW = WORK WEEK
WW = WORK WEEK P = LEAD-FREE
? = ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

D2Pak Tape & Reel Information

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059) 0.368 (.0145)
3.90 (.153)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014
 IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF

†
Qualification information
Industrial
Qualification level ††
(per JEDEC JESD47F guidelines)
TO-220 N/A
Moisture Sensitivity Level D2Pak
MS L1
TO-262
RoHS compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comment
• Updated data sheet with new IR corporate template.
4/25/2014 • Updated package outline & part marking on page 8, 9 & 10.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 25, 2014