Homework 1

1) For the shown NMOS transistor,

Sketch (ID-VDS) characteristic for both long and

short channel transistor in the same graph.
Show the saturation point in the two cases.

2) For the shown circuits draw (IX vs.VX), sweeping VX from 0v to

2.5v. State on the graphs different modes of the transistor.

All transistors are (short channel).

3) For the shown circuit, assume long channel
transistor with W/L = 2.

Neglecting Body effect, calculate the value of

(VS).

Recalculate (VS), taking into account body

effects.

4) The short channel NMOS transistor shown has

W/L=1

Get the voltage at (Vx), neglecting body effect.

For all problems:

- NMOS

VTo=0.4v, k' = 100µA/V2, VDSAT = 0.8v, γ =0.29V-1, λ=0

2|φf| = 0.6v

- PMOS

VTo=- 0.4v, k' = 40µA/V2, VDSAT = - 0.8v, γ =0.29V-1, λ=0