BD136G, BD138G, BD140G

Plastic Medium-Power
Silicon PNP Transistors
This series of plastic, medium−power silicon PNP transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
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Features
• High DC Current Gain 1.5 A POWER TRANSISTORS
• BD 136, 138, 140 are complementary with BD 135, 137, 139 PNP SILICON
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 45, 60, 80 V, 12.5 W
Compliant*

COLLECTOR
MAXIMUM RATINGS 2, 4
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc 3
BD136G 45
BASE
BD138G 60
BD140G 80
1
Collector−Base Voltage VCBO Vdc
EMITTER
BD136G 45
BD138G 60
BD140G 100
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current IC 1.5 Adc
TO−225
Base Current IB 0.5 Adc CASE 77−09
STYLE 1
Total Device Dissipation PD
@ TA = 25°C 1.25 Watts
Derate above 25°C 10 mW/°C 1 2
3
Total Device Dissipation PD
@ TC = 25°C 12.5 Watts
Derate above 25°C 100 mW/°C MARKING DIAGRAM

Operating and Storage Junction TJ, Tstg – 55 to + 150 °C

Temperature Range
YWW
Stresses exceeding those listed in the Maximum Ratings table may damage the BD1xxG
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS Y = Year

WW = Work Week
Characteristic Symbol Max Unit BD1xx = Device Code
Thermal Resistance, Junction−to−Case RqJC 10 °C/W xx = 36, 38, 40
G = Pb−Free Package
Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W

ORDERING INFORMATION
Device Package Shipping
BD136G TO−225 500 Units/Box
(Pb−Free)
BD138G TO−225 500 Units/Box
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please BD140G TO−225 500 Units/Box
download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free)
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

December, 2013 − Rev. 16 BD136/D
 BD136G, BD138G, BD140G

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1) BVCEO Vdc
(IC = 0.03 Adc, IB = 0)
BD136G 45 −
BD138G 60 −
BD140G 80 −

Collector Cutoff Current ICBO mAdc

(VCB = 30 Vdc, IE = 0) − 0.1
(VCB = 30 Vdc, IE = 0, TC = 125 _C) − 10
Emitter Cutoff Current IEBO mAdc
(VBE = 5.0 Vdc, IC = 0) − 10

DC Current Gain hFE* −

(IC = 0.005 A, VCE = 2 V) 25 −
(IC = 0.15 A, VCE = 2 V) 40 250
(IC = 0.5 A, VCE = 2 V) 25 −
Collector−Emitter Saturation Voltage (Note 1) VCE(sat)* Vdc
(IC = 0.5 Adc, IB = 0.05 Adc) − 0.5

Base−Emitter On Voltage (Note 1) VBE(on)* Vdc

(IC = 0.5 Adc, VCE = 2.0 Vdc) − 1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

TYPICAL CHARACTERISTICS

1000 0.5
VCE = 2 V IC/IB = 10
VCE(sat), COLLECTOR−EMITTER

−55°C
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN

150°C 0.4

25°C
0.3 25°C
−55°C 150°C
100
0.2

0.1

10 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage

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 BD136G, BD138G, BD140G

TYPICAL CHARACTERISTICS

VBE(on), BASE−EMITTER ON VOLTAGE (V)

1.2 1.2
IC/IB = 10 VCE = 2 V
SATURATION VOLTAGE (V)

1.0 1.0
VBE(sat), BASE−EMITTER

−55°C
−55°C
0.8 0.8
25°C
25°C
0.6 0.6
150°C
150°C
0.4 0.4

0.2 0.2

0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage

1000 10
f = 1 MHz
IC, COLLECTOR CURRENT (A) 0.1 ms
Cib 5 ms 0.5 ms
C, CAPACITANCE (pF)

100 1
Cob TJ = 125°C dc

10 0.1

BD136
BD138
BD140
1 0.01
0.1 1 10 100 1 10 80
VR, REVERSE VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Capacitance Figure 6. Active−Region Safe Operating Area

1.50
PD, POWER DISSIPATION (W)

1.25

1.00

0.75

0.50

0.25

0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Power Derating

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 BD136G, BD138G, BD140G

PACKAGE DIMENSIONS

TO−225
CASE 77−09
4 ISSUE AC

1 2 3 2
3 1
FRONT VIEW BACK VIEW

E NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1 ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.

PIN 4 MILLIMETERS
BACKSIDE TAB DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
D b2 0.51 0.88
P c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
1 2 3
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
Q 3.80 4.20
L1
STYLE 1:
PIN 1. EMITTER
L 2., 4. COLLECTOR
3. BASE

2X b2

2X e
b c

FRONT VIEW SIDE VIEW

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