. Aport (V/ Titewn a = : 4 2 _| 54 2 e 4 aS do Bs Semi conductors. & - : ni Conductors. Basics; Daife, DF, Hall eMfece, Fewmi Level + Au gi Fransiavors and Opto Electronic Devices / BIT, TFET, mosreT, LED, IF 6 ei r |, mos PET, LED, Gi vars si a * Steps elated to design of rc Pr, APD® Nor Theory dha Rasies serene Total 40h. ee dure, dire Yehafermi Level p hall effect ShaPn nee aes Zener ay eT FET oe Semicandackors . a mage of elect rome leices ATE designed 28ND gia Ge ine elexteonre Configurations aici) —e ts” ad aps 357 are Getsey—a 6° 38h 2 gg? ape 34.452 PE ‘ sol co (49-9 GE VaTence Shell eae a se ae votence saruared and achieved Beabilitg Th Beability i, due vo ee the valence shel FP qracricallg opaened fa normal atoms gtabiity (4) Shoald also ave ae toi. Bt ene. Fo ger the same jeenadd closers, occur Pay laind nett gaining + en 1 the dam to Wese VHP j the case of S$! of ts Can become Stable ed, so eS Taming the case of acl. BNF batter fr Wa to loge 4 than ae. getting 7° Ber Hach atom’ tries tO dan qhas a sharing oF eccurs - ftecr Gnaving of & a 4D aerackare ia Foumed da as 2, This Atom an figuy Ehe Central atom 1S namber™ | dere Shaved —e> fa nad) —» chit). EE |valence She ta tna nada ~wq eek & oral charge > 0 fp D neavsal Ge. ie Yo oor (nacteus + peers fig 2) 7 ' e through a cinié cress | eee 1aP ces ConEne 4; 32 Boa chara’ 4 | ar aection avean © cane Hime, In anatem™ | ag due FO the. e 2 ine € cannet f meve & So these Ce aated bound & is e 9 3 artsaction of sve neelens. immobile e IF a force Qxeat a gerafeac ahd’ begins: ta Tove ex than thar Of naclees sespporeing: SMe: apie. Buen teipe oF ‘one alle’: free ov Mdbie. The valence Sra e , aye loosely bound ana conauckivitg, ( Ave 6O valence © ~ ; . Z é , a ¢ fig (3) Can. be ciaed FO Gommenr on Gondecivitgs oF an, las Aicom wi group S = 1 ‘ 4 a at - tthe @-Shinedba 1 7 > e* axe. Bitting O7 ero valence \ 11@ ¢ Shen of | cind 2° The cena gram (2) 18) Rawing” FE ve de valence Shell, \6 i 1 ¢-€ Eneegg band 7 collection of clesaley spaced discrete @nerant levis 12 called | ee i € € Enesay bond” a (=)hare o ene EO) o i Assume alll atomen are Seperated. So all the Valence have Same energy level cind oceupy some energy band. Once they are Mmougnt togethes bo Satig fey panii's exclusion princi Ley phe “bo closely Spaced Energy band - Sine thet are Valence. & Shell they accapy valence band fn ein vB (lower energy lever) 1 of type bacind ( belong to valence Sheil) henice cannok Stippase Camenv., Qute cxtene Force 18 applied, thee” can condact and they gecapy CB Tn exclusion pineple is satisfied @e also paul e fee and: hence fn wh CB Chigher eneigey teve). 16 of type lever. oF edge ate lowest Jevet of vB. can seppox Cument» &, ener gy edge are highest eneway es Bewween Fe and and &, is called Forbidde exer there. Go the level b/w gy, Band Gar band .a Ener: Ag Ef, increases material’ bacomes insdlqroy As Eq decreases maternal becomes Conductor foo induiatai OZ % Gav * Fa Begiconcluctot Cg ~ tev ~ - fon Gonduceo &q 2 Oey = ee *y band e), Bar 43 te does nek Seippore Conduction it 1S now “ Shown ) . : . S EBD iS Enevgy vs Distance -o length of matesial + 2 | > Cy) Cx) 9 i Fssame temperatuse O'K and there. fs . million st atoms. The gi s Gers as ‘naaiacor 3 Chee © i exchanged, the & Cannot be. pailed bac, Bae once jee 2 @nenen Fhayed, the arome can pail back thee ~ghered-e will — a ke. .peiled by leoth atoma. forming a bond ~ egvalent“bond Jbey Semigina elecesieal,, omic | Pine at . nee can be canbounded rhevmat 2PC¥dS np vhemal enerad By sepplying Soo bond te & 16 peillea oat of areraction of - ow apg a poe@rial qeawa the ovatent nucieas. WE free @ 1% eligible FO Mae bo the Exyeeal: The moves towards AE paasy ond ' Cuveent towards “ve tet the canent Pe tn me The caystal now becomes. conductot \ ye a charged particle moves due ro wwe OME charge \ Caresaction & sepuision) ,1© gaia ro be duilting’ | oe cuvvent (Ln) Hote cureent (Lp) - man An & 15 moving fom bow one boun a Stare tO oFner cn a Fee & moving payePne” raving °F? 2) An er iszmoving ver @an © mong jighs § [@ Ane 1S proving ak lowes enerag level enevay, eve) (HRN © moving Envough Renee omer ae corakent | Weer atomic. gap bond fo Orme” _ Non existence oF an em ay Covalent bond 6 defined 45 epace. : 1 al | Bach cdot iS a A B60 & area ae covalent bonds. (momie model oF ox) valence Shell e, sitting m a: covalen® bond - Re gaoe an & oes owa cal 1¢ twat ewe ent when. we voltage is Applied € at B gets atwacted and ike vi the position of |. Now B has a Space. the @ C gers Attracted Moves to B and ik Cominues » ( he atraction due ve howe con alec be Sard ae repelled bg -ve Charge) Sb the e- 1S moving Aue to aAtrraction/vepulsion along EpCBA PR ie procluces a duft curvent m same path . ) peocltices eurient.In, CO en) . Cm vB) c x Produces Current Ft So two catrent: Gre produced » when evmoves FPrcin € XO A, the Space me Foom AtS EAB the Space movement Prd: Cunvent, it Should be, Charged portele- Thea we clefine the Space aS" Waly charged ‘mobile’ pariels the “tecmical name i@ hole. The cusrent eT is tp - ana hole moving in va giv Ane moving in ca gives Ty hole cument p+ : “the, eniatence of hoe! practicalky povea be te @apesiement Hall effect Iinen a= Moves Out OF a bond, a hole 13 Formed» Ie 1S Called Election Hole pas Generation CeMP? Ran intwnac Semiconaucta fiee & conc: 1 hole cone. Pr. Be Bae a cemerk th 2's Greater than hole cunent Tp» be can Mobilitg of & 4, ig qreares than mobility of hole Hp ancl Net cinien 16 Sum of & and hole cuvrencs Vege Legit Tp na Maeh + Pa Hye A. fat In F F. Aig Eleonre Ferd” Peas secu ‘hveand hole move in oppossite nections bay cement Given bey them will be in the Same clivection . . Extvinsic(Impare) Semiconductors Te ampiifes can be clesigned | T= nasint PAP caging inerinac Se, bex the. i Ree Lemp needed to sincreased “hig i ef tev Ie Prackicany Impossible i gf | ze : ¢ 1 - is.ge* | The practical method 12 +0 icrease ©. % hole Cone hy adding a | impersivies . “a ie Gailed Sxtinere, Se S* | at Emkvingic -ve type oo Extrinsic n-Eype os n-type Se ve Rent divalent "impersitie’s lie Phosphorous Aesente, Antimony gz et Bismath are aeicled to an inevinaie Se , af i g¢ aa | af any Tones ye, Soccceil wa fof sewr Contam [oA ee commie ve 5 €4 = a fach pentavalent atom sappy an xtra &- Each of these | Pea cttoms fom an extea enesgy level byw 6. % Fy Neas to Be | ‘ 6 All intainsie ana extunsic Sc at O'%. act as i es MBalatos. Ourof s & 4.€ oe Hghtly bound gnd 16 'S Wahty ‘ jbound 8070 fren & 9D neo, p20 é : As temperarare IS increased (day twon), Ue & aeqcives a ¢ Energy and becomes’ free. Thus the crystal becomes a ge Zonducter Since an e i lost from the impurity the ef * npority be Comes. Gharged and the process: (S$ called trapenity iontgarion@aias ince & la donated by impurity G le lee Called tone atom ~~ y= Done Eragy lew Gu : 2s Elec. ® } -ptewsi) of ence) d ‘ mr Derdian @.> From vB move to €B | So condurtivity meveages @ a6 T “)- lee At soom temperature @atwinex Sa gives + tame cunent than ineingie Cue vo Impariny ionization « \ Doz Ag ET)* TplB-8)+ (8-82 |e ee Tp n=P 3 antensre n>p > oer | : nay 3 Exvinete nép 3 p-type majo YY Carrier Sn minority Coanerse | hole majowtg Canzenb® — Ip minoity Current "* Tp the : ola, >? Te ? tTyiIn- If netype ie heavily doped * il inesinsic and envingic “Gemicondactors are alectrically newt ¥ ORS majority Carine ge & andas it is off negawe charge»? Called n-type» Eutvingic’ ive type of Extringre ptyre @ p-type se eure 2 oe Faiialent impenivied ke Boron, Aluminium, Gallium jos Radia axe added to an intiinare Se. Aavatent,For One bxtvalent cttom one hole ig created AE OK —» No holes h ves oO © MCB 2 Gia, TIO, B® PL wWoK, & th VB break oy teav'm covalent bonds Gnd mae ¥O holes 1 Ey: Thus the Impurity atom gets an & fis—theand ie gets a ve charge, This 18° Caled _Tonigayion (Ft) -j Ak this temperature the Crystal becomes Conductor he impasiky Is called Acceptor impusity | f, = Réceptos Enesgy Level. | AE B00 Ke gars. -theamal. enesqg and moves. fom ve FO EB .Cweating | an SRP, The conduction will be due to ,both © and holes = sie | % “Ak. vewy high Lamperarasés Al eatvingic, SC beZome: Intvinet because BB txangition dominates es overthiows 1-1 cd ar UhjS témpercdtqre asefatieas of all electronic devices vvi'il get Eevminaredt : ns kupe . 4 Cry Ca-ny Ca): e ey Hole . Boo! 100 100 100 PRP —» Satem se oot! 1008 tooo, 1000 n&xp —* Sxninsre” 100,000 ?. AXP “© ihtinge « ne 2 Joo. Logon | Conder a FN lide Hwee er y abe net we ttl on ‘ Na DWH Seta torr Re todK. 7 .. 4 ow S ”. hep. = p2dift dived ee ent hawe E So not a a Ras 0 Switeh, bara intemt resicts - Ss © oo & @ n # cic co meenos @ wecnd S nth s/he. bingig and Pass ~ Aetton haw ‘he produce of fee & and hole cone OF extrinaic Semiconciuctos at a given temp Qhen bey : Le Whee fly f@ intiinsic cone: - Ag = -Conatant Indepandent ¢ temp T 2 Temperance deg 6 € 2 Energy Band *etmgap G0.» OK: 2 Borg mann's constant Coneides. ok 308% Gn imeinase Sc. HIP? Li ®- When an -tqpe impadiky & added -n# it Combines upith more holes #0 “fb vesting cconetane” mp He" MIPS = X Now when temp of Tsc_incseades So N* so as 57 thas Wy increases. ee 300° 2 2 2 oe ee nyere Mn ge ag cae eee ni) Na fie Nis Based on electsical neuvality pzincipe, *& can he stated (Nor? > Na +n] —-® Where Nip ng = Donor, Accepte 4 2G 4e2 Pw = hae, Free eo ¢ Case 1! Inesinate Np = n=O 2Bu © &y @ ~ + divechay ; Levinenp. |) C09 TE ne Eepe:. pore os res a — oo “Sa burg 920 mn a. pt fe Nat MA oo aaeaeene PepeDiffusion ©0o oO 0 cOo- 0 oO cone: guadiont cee eee: © ox cleceases ‘he holes move . 13 Galea aliftusion... Since there is > _C niffasion cavsene) Avfrusron Cusvent density Thus 4 ccrrents ave. possible Dai curyvent 13 Whereas. “ciffuston Of charge caries higher Cone fom to lower cone. Ts A movemens of charged —» PH hole caste hoe dealt @& diffu, e avift proportional be conc: of char: Cenrsent 52 -fropovbional to tiect ge coin % onc: gradient ~ 9 a seals ane ena ea kane eat AARAaaaariS o is Ss ‘e ‘3. 3 SOON OMEO Wr % OLO68, "@ &. Weer) ra ed age ae Bese ae ged b, axe chffasion constanrs given by Sins Relationship. Pr. Paoov, Te Temp in OK Bp An Sf Al 600 S w= Bolg mans! | = 0-026 (ae 2ac%) . eae eet oo ev/ex “ Ze Boles marin's « Constant. Friewmal vorkage th Toutes /oia, Btandara values . od 8 ; Rye = FS M10 all Se'al nr. 2 ag x id) CM” We Ge a Ji, = 3@00 Cm?/v-see a = . 5 fGe Mp = (00 ” oo r : gooe way = 1200 : My 2 600 Yet) OK Gres ate “ gis hat wt © How “mach: conor impuxitg Shoud be added to pure Ge, 50 Lhat ies: resistivity chops Fo 1% “ot b's origing! vatua(44 = 44-6 ctem. P jy of 44°6-Bem ne Bag : = 4 #6 em a co 2 Wty bytHp + fa & ig n typa emnrens che to hades io Negleched - Algo by mass Action law Ky> No! DT nya > oe Gye © NptAa a ~ ! : = — : ~ 3B-6%.* 10° Donors, forms : fend y,ww 1 kyst the values ven a, Mist of values v9 calc. | 3, Intermediate cate 4. Give the ea 6. Answer | 2° a @ we P-W Tanceion diode Gren Cweaited P-w diode . Vos Kron (Monn /;7) ver 5AM Any HE Yin =r aN tp [E Ym Ws Mot tO eee no = Mn Jot 0) Pp? NN /(rorn) intsmsic (51, Ge). with Banier - SE, a tim —» EO @ OG | 6010898! Or OTON eens ee}. 69\e 0.00 is @)@o6 \ece w_\_ Be: 2h Del acr [4K Ce-2) Je Perm tii Mpa, Fro — Initial thamally Gencrcited minasity, Eanes conc DA —> Depretion ¥eQion Ber —» Space chargs region TR © Tuansia ion region IL Immobile xons . NE —e. NeUnONSed Sn 5 Ong —e Unneciirctised Cone ee — Covered ap chanss Uce —» Uncovered Charger Were Width of oF Ano, Apo Penetration of DEX nye sites « Va —> open at conten eotant ao cee ee naity . BO, OOO. On On Oe Cm Oar Oe, Oi, Der Bim Ven Be hen Ben ey OD, soe lo eo oeeoa - @, > Pones atom ey “ences & Cre = ® —» done ion Cive Zs OQ, -& Accepees atom o @nceas. hole Cn ze ©, =e Aecapees ion (2 y Be =) = ; 5 " i) >> 7 : BS Construction: . : % : ) a n 2 Fin intxingic Se, Mo 16 Added in One aide and Ny frat ©... Side, ovith metal comaes puned our, : a f € ¥g CA? marching eth @ The mincity Gavsiers Gre thew 2 P on gide. There ss a difference in Cone..of holea # om Pe 5) Gide -Thas cHftuasion tones place mm both cides. . € - ) : In an open encuned pr diode Which i just then ce . : eliftasion of Chasge Camiers eqns dete & which ENP ey yecombination Secure: and hence +ve and -ve jong géi C200 DD) a or the center ema hence situation @ bacomes @) & : = Paste cliffasion opposes Pesent cliffusion. Though there. = OPPosivion, Mince cone: gradient 14 large with grear diffice oo ten P : s Sur. @.4+@ we get c fot éy | er 7 TE BT $a ( me) 6@ at if iy 2 Mp. Ectey fg* 2 .~©@® 2 fe tune fermi level hes at the centers of “forbsdden, band i€ mys p+ Te ties Above ov below the center jh Aiccoreling to mass action law : hp = 7:7, - Sib @ 4@ we gee Sey KT aACNem Zz) —9@ Faitwinsic se Ak zoom temp pacvabi of entarence of & th conduct! band df h- type Sc ia move than probabliity of entstence th €B.. OF Mikingic+ se na hence fermi level moves closer €@ n-type than Inesinsie + Gpy.> Re- BT Mn (Ap) —©@ | Foe pte gS Ny Fsoa_@ Epp = Bre er nC A) OoAS doping Conc incweases % n-type (P-type) Fewmillével moves cloger arid cloaes to ca (VB) ang May caincide with edge of ca ER, (@dge of ve tv) nd may even penetrare Into CB (va) . Lng Polo Bee Oe fs temperature’ Increases:.-Fesmibevel inves“ alager. bo toe Center of fot'tiden bana wh bath nand Pp type SC - w= Epps RTL (NNT 66 en ae ho 2. Eflectva masa of & Limp, - 3 Mp = fia “the digsanie ae] . Lawns lever feom the Center of forbidden band gee ote meee 3 an ae a ns, Using © Gens BTM StI Hey, = 0026 M, ae a2 dn fa uchg +O - = O-o2\ev 6-021 ev below khe Epg lies center of Forbidden band + j lies Gotev above VB'. if Cone. of acceptor 3. in a ptgpe se Femi le Find new position of fermi level elocibied « atoms 13ny en {Fra — Svar Ny 6 (bre = 0) Jy ~ (Ben €9 en (Gem - 80) fer ——— > € en ovotey Jer Be ) ic, . Be New Femi level lies 6-022 ev, Above vB j . Be 2. (4). fi an n-type se Fermi level Hes O3er below cB ) : 200K.” Find: the new location. of fesmi level iF temp d jncreases 40, 3B30°K: ASsame AN, FO be Constant «? Png: -Fxom -@, ag0k = : , e? Be~Kpn, RSM EME) og ge gasev 5 5 — o> FF oa € Ee- Een berihe (ve) yy. = Wo 7) or sey” Bott + we z a ) New fermi level ties” o-33sey~ below ce. . ox) , G) A. Ge Sample Is coped with Phosphoraus tO an eatene “3 tee? Ao Wt aSsaming eft mass of & (mm) = haf oF “yy Cowespending true value find location of Farm} level. ¢ 7 ee , ie Ge cone = 4:4) 2107 com? ~ a Ge- KT an (Ne ? en G . Ss x et : 2 Ne = #42 «187 Cm, tm P? Ee at ~ . osm. . 9 : : _ zim Z Hes x 188 oni? ) A 5 i Nos #14) 107%, garaid ow? - / Tot4. ~ & 7 By © BT ONT Ne , Ce), = 6 2S4ev { Sen eS OO Qsqev below Ec. Hau effec: TF A Semiconductor Canyng A cement Ty /S Placed in A transverse. magnetic Field By then. an clecenie Aicict fy ders mduicedth A Afecuion Le to Ty ¥ By: 4,6, —» savhaced, SasFace 2 eh bie 34 x FignYhand Sore w Pele oy hoes es Pog tied $00 86, 9 fe US Wnidueed .cleng.vig femora A Porce i induced t4 eG-Ine By. Sq Me & WING Pushed to SFeSurtIng th more--ve charge vat St» ‘Ths’ 7 resuikts wi A potential vy. Gauging Ey. IhiE6 the’ cOee ot M- eype- Fo prlype Ha Stead ce eo ie Sil be habe se P= charge. densiny I ‘the forte Fy 6 cated Lorentz force (neither electric na magnetic) - Applications : i dan be cased to And the bape of Semicenducrs (ne Pra), Q. at can be Used to find charge density and hence. Gawler cone: (.@> ov hole Cone: ) Vas Beta aise f, 24 » cateatoe @ri Feed . nope + 9 O97 3 © Oo2.0 OOF AKNSOCKHHKHOCBOGOE GEA2° POMS, Oo o 8 Qe M& © otpfLte rr Ce COCOONS. © 3 3, Given mobility Conductivity Can be Calculated 97 vice versa Hall coeffecient |Ry = 12 Vn 2{ m3/ecoutoms - w= Py WWE 4. t Can be taged. to. meaattiply 2 signals (Hall epfect meriviptes t (> munmtiplt oP wget D Ve Bata ade of Hall voltage We th an, v-kupe “fina the magnit io a Gian Np = tol ene? Ge. bar Connected a6 th ign. ae offibfme, Sa = Sulem, dub anim +4 + 3e00 ent] yipee 2 . , (1, Nzey fl. -Preq that fs Le to cMreenn oe ob ctysent Flow 5 Ws drift velociey(@) A p-type Si Specimen 1S Cahibiting hall effect cmd ws Connected aa th fig). Catecitake Mmduced vortage fy 2 350 %/m AY = 0-009 m i Given 8, > o-0@ Wh/m?2, a> Bgag . oe 2. Gasy @) Galeatate Mp fora p tape bas exhibiting hall effeck and 18 Connected 46 1h fig(t). ASSume By = 61 Wb[ me Bmw. das lon Pa 200 000.-2-Cm- Nye Some dys Wy Gn 26q p-tupe Ge cryera, having pe Car accertorsfon® ” 1S Cowerrea to “h-type having. np £74 x10 donors Jem? using antimony (sb), Calealate namber of Sb atoms > be added ~ Ageame clensity of Sb) Ge atém’, ac G62 and 5:32. 9/ey3 n: PARE : . : ‘ 2 moet ‘tip Poner sens ef To convere.to N=type Monerial we-need to add of Qatro) enovs. 2 (y+) tH 4100 | baste Ths tp Teoft - T= Nant Pap. T= naa,ent paren DP Et a LE th Ls Ane. Ge dna p> nyore: For pecrerica! q Ni For Pscerical appticarrens n-rype dewees the Pri Bonen fa 6 NV channe 2FeT, induced N-Channel mosFe7 - ere ave OF preferred over p-type devices wi G— lpm -» pe . 0F Q.30 - S-Bapm ~8 Engh - R04 we ee Genesion and Secombinaxion of Chase Carsiers a — | @f . ane & io cg’ 14 enctable: 36 #* comes 16 Ie ge ve and. Combines with hole . This 'S i oe cated ERP “Recombinaeny. the free e~ io, oy eo . Rtreree oe re oer ee decreases ac € Lite time over, hole Ty tp 18 defined as Auraton of : a hime during «which an &, hele can Zuppore Flow of = -quyvent a ac Diffuaten lenge fore, hole hn, hp defined 28 disronre a es corresponding life mes at given by ee at et ee , ot Vewiaeion OF “mvnowity Carsies Conc . “ee fig (AD with “Time ec et. etojad . Enitiad Excess cone to nS St Ing 7 moe 7 tL mat Hed in : oe —} iene e¢ o¢ a ‘ Ore a sLbominerton . ae . (3. of A BPE,fg (3) with PIseance occurs , Go the hole. conc AL a ume -T' cn iumination ig increases’ ( togetner wsnn “holes clue’ .0 temr) ‘ifermination artes Wife Lire 1s! A hole genwated . due to yegenerate because ‘ila mroaite~ over ‘secombines belt Gannet. ig Switched off, where as the “hole generated. due ve socom hei tecombination can regencrare. Since kemperarure ; Bwitched off oe oey ure Noe bemperat p(y —» Total cone’ ot E20 —e Excead cone: ar ero plo pp tor = Prot Peto? tae! hte = Pro 5 minosity “Cantex -cone. is Vera math incsease th majority Cavsics increase wh greates Ehan , of conc . n-Type is Gem) rum) ond ae Bao ' : Ae LE te t09 40 Ot 5 . a : 180% brefig cs). ANumination 13 falling only on left side Yo) —reacess aonc at a Cicrance = 6 oe Palo? —* Torq cone ab a cistanee = 0 “ Fe | ; lt | (2) Aa n-type si bax ia, illammarea at one end [a20) the mines re | Caries Cone. vasiation §S as Shown. Calcalare | @é | a) el oat ang f RO? - (6) Aittasion lengin for holes " gee at | yx ‘ bert a at | e¢ bee tx 10% . to. "ho eas arena | ot Pe Ping =. 5iRa coe : ef Fao, ec = p.asxid? cri? € a a : ioe & OR Aled = attoy a*/er - 2 : ac jab oamm 1-0-4 mm /y € i txt = Gents srt) eo: top o 2H % et oc aby = O:2mm™ i. —— C ee E et ‘esm) hevel " open Crt P-n diode ~ a. s cee * feami bevel is Gongrant thidughowt the ‘length oF.4n e¢ Open cKt P-n *cliode ec we Fexmi Level conatane for an open emt Pn junction 18 e¢ valid ae ang p-n junction of any elecksonic device ee x K,lev) 1% afined ac hift berween edges of CBs* ve &' of prand aides. i Gt Hg cer and Be Ce) ave numerically eafivalenr . ec oo© yO: @ Oy Oo -%-0:0 ae Pp side ~—» Fermi level when it was inevinesc when it Had. nuns | He Fei} level at nside Chine €, 18 cloae to ve_( moves down from in tainesO 3S Ae p aide a w aide Bp & Close *0 2B (moves aap from. inesinsic) thi * 1g. condgant Ehvoughour: Usiag oa: ! (ev). (Wes thae Te an Ey in PN ionetion which is” vpn & We AMF imerma of cinits) a alow ws axwtent. catcatave Cy oe & Ge ctiode QNen “Mp Fermi evel position 9% P *@Qron ke Inewinaic® Fermi beve * Ey +. xT dn (ae). a , = 0'303 ev ‘© @) Fx a PN ctade caleulare change 5 Contact potential N-Gide WS wereased bua Factor of “1006 ond oping on doping an Pardee ematiected + Myo Maye BTA Coa na) va bn (01 01) 7 er : Verdin (Neo Non _Mi* ! or Ne”Ra depo diffacton occurs * de pg = 1000 ip; Naar Sar 7G IPH 7 NG anit. oie dite 4 Tpntrd Tp glo?.. pe = Seat the ciffasaion -Corsent fiom peo wv if A Cav, 28). on deaeases So 46 Curyent px Aimilosig fo aide, wat, ; . (os ar tage “Syn 0 2? Lon Bos ‘tn a Continous 18. Conerant | Cument ia max aldes.. . Srotement 01+ Cussent due toe avrent Should be Cy are “correct but contradic tury «Shs ve paide ae x wn hoes 1 rae GS 2 Lpgt?? © Aad be! : bp io Lppler = BAPH pole 7 = Bae (oy + Trp ler: 4D, ho 4A Pp too, PAP alo bp En Reverse Satuciation ite ae long a8 e103e Gectional Oe * marenal conerant ~ ce cemes and decreases on born yO a— : © gn because Another Cawent Component hasnly bawen 15 ¥o Accoum namely Lpfx) 49d Lng tn) . _ Epp) 2 L~ Enp tx) ; Int? T- Zp) ) pnt + Lp_ lod othe ) LpptAr= Enpl> etlbn d @? Buen Sp> Wem, e's OnV/em =, Ane bps ontem . Caleniare ) narie of hole aiffy cuwent bo & diffu cumen® cwasing ) ope Ganetion. ma Pen Blodeeer, .~ : 9 oe bs calealare tpn (2) 2) Ippo? ) 2 pat) 94 Dp Pro ory on ea 7 Tn plo ce = Bra hp OPT = Dp Wap cenit ro) Dye en ) Fo 2g AF © yd h oe é pom yt q y : Gt) d ) *, Voit, - Amphere Charactesisties “y . yw E 1a defined’ ag cursent Fiowing. through: the cliode =) Feom pron. Vis defined ag voitage acsoss keyming re 5 Set diode with. ave ab Po side =) * feaw trerse vottage (PIV) ig defined 29 Maaimam AB the ay “Gan be “Safely applied across a P-N diode- 2, Fee. ve te —e Shy >> Re eave. eli oy Nj = catin voitage Ge sv Vir. 1 = teae ae ts -1e a» For 3 : psacrical, applicarions , si digde:. 1s. prefered Oves Ge diode. due tO the Ffonladsing *easons acts as better Switch ay Posi Reinet - Q?. Si diode gives better operotable @ £&Q «Eg. | Si diode aives better Therma! (oa2 2 gow: FY) range : ev ev ; Beno CH) Puan: saw an-the fm of S02 (sand), @) marenial Available the above explanation device: Given V-1 chasa of a p-n ait oo) Bi ot Ge. diode ~ ts). © (A) oe ic, vata For.any electioni& ode. Cominent on Whethes@ can be Arflerenticted based on V) Ey ny (A 266A. % (e%/rr_y Ms 102g te 2 lO FSu) ete ool ~ ) a 2Mnvs) + $s Piso 2, = Tol Sa pio tea acr al 19 To valees are matching “For G ai case 3) diode Hence it Goa * : ' 7 75° of, Teves (s) Coalealace - ikdge acsoss a si ode FAD; Gaturation Cement. ig flowing 16 FB (61 Find Ahe yowage Ot which’ weverse corvent 1 A Ge diode Lai xeach 40% of it Saraxation value —t+— De t,(e “ry Woato. “OA Loe 1y( er — 1) While Zebstitating a value fa an “envity Sebsutite along: 0) ign: While caleatating the value of entirg clone clistutb ‘the enating ee del a _G? TWe Ge Pon diode ,are connected “O8 shown: Find Nu, 2%wait Plow, | Gh a exes combination always rai Curent he Mave i pat Zs 2(e ="). my { ~ MAM ee | 3 Gs tole) 9 e 1@¢ | @< While giving anawes For a voltage, Considex the polavinies | - quen in problem Statement while giving amaner foo aq Cuever, ve onaiier the ciixection Shown wh problem Scasemeny @e ‘i Z ee (2)... Hacamng Tp of Ge code gnen in ent as | (O'R Vo ™ ec € given cur ist. 050 (SOV (A oEIaY A) o-1V dan Sige ¢ a 4, 52 2600Lp 7%” sv a * - poco face ay fo gowe thig equation sabdtiure tre optigns and venky ~ * S-ov cannor be answes ‘Out OF Fest ior 7 alue (0-5) Que of 4 values 3 pptions Subaiitute the middle v : hues RNs... BS eo e RAAT A Lys pens —b © Lng eens —ee Ps ae (A) A Ge diode p, WOS eossying A current of b2 mA ome ‘ ec a votage: Y) 18 applied acwse Ft Acaame Tort 1" ® x dt was replaced by $i diode “D,, Which needed 9-265 V ae ¥ arent OS Dy: & more than“ Yp) € ang same current OS Py aloulare ton Of Pa” ce [ar dn wpe te (eho ' oc pom eee Ne 7 We oe = Yo ae ee Tea (e We ® T= Cae ey > Ge Me : a2 ~ 799 8 on™ CF eo ASE, e. EE (0) the reverse Saturation Cussent density of a Ge chode is dmp/m2 - Calculate the vortage wequised & be apphed ane = Jew fG bo Get a Cumene density of 10% mA/m® E- Jp (eA | > v2 0 aaaav 10% Pgh AP) aE Diede Resistances De of static xesistance, = NC & Oynomie Resistance vawve, I: A Ge diode has 1,2 20a “ar 126%. Bnd the Oynamne* vesistance GSE (a) Fa of o2v 0). 28 of o2V Maes VM WAM: Zo 2 Te es a‘ 2 1857273 jag W600 1608 eet ee Tp #3040 - @) Fe > ve te. Dag NYE AM 2 8360 ze (Bk VE ME Re MTL Onze ma : Staen oe —= j CA CE OG ORE LEY| (2) The BB Saturation cursene of a Si Pen diode dA ft Determine iv's Tearstance if o-ay of FB. Qpplied ~ Sys tain : | i i Eqesvatent Crecaits | ° i SN Rae Vger > Matage of. wETHORE a Poon ROK ” . : Rugr 2 Reatcrane ® £ ov. ue . ae . Vanes” * : F at q AE For an element th inf if the vet velationship 16 nok Knoae, : {then we wil replace the element with equivalent combination ef Of alemems tify hon v-E xelatons hip + see Fo madelaQ diode - the v-L selationship IS altered Hs ef fiece wise 7 P we : Lfnags mode\ Cpmim) - Gite Pare . ——-4 - oie | ¥ at R > ¥ Sin piticd ‘NET mode) (Sm) z o }——* hee Ryey 2? 7E dea + oo WY, Model (Im) : ve? XY 7 3}.OD (9 an the eq. che ve of Vy Shoutd match with p side of ciode jhe Above eatiivalent ckt —me valid only for feaward biag diode for A RB cliode eqeivalem che is “Open cue in all the three models- iS Ithough using wesiators gies Some ‘be’ exsos. It 1S tolevabk -! till 1 1. below 107 la? i 5 oo. & j (18) Fox the gnen che cacaming ideal diode, determine © point . a As , o fo =) w te. ie in [ fee : = “2 Pine: ~ - . Bd Note! Q point.is clefined as intescection of load Ime with S vet chard’ ; rae a) Fa an : F © ae 0 2 et 1000 Ze: e > Bp 2 0- avpsmw . & © vpro Dap lm © my . e Loadiine’: Load domes the lope and hence the narne € @= pone = (Vine, Toa? : © (6 tema). “ . 2 ; . : Sh WW) UR aicde whose v-r chovotteiiades 8 cte.chawn © fig @ 19 Connected aa mh Fig R- Celéulate’ 1! ) x . © Rs cn) + ie ‘Sy 1) Tdenrify A oR € tov a.a =) lg. fF AB weplate bs v neg ¥ CV: Open. TF FRO ~ oarey em any ot edt! o ; 8 Ryaty een Juve 2 at 3 tov: Slope - : 3 gl og f a a o-2. 2 aa a 7s wae ha nn . S 9 detWS) Gateutace Tp and vp given 98 CHE ox. ty e: element F *T a] ~ is —_ ~e lms Ane: ane . | a 6 -4x2e 06 ~1r ARE o | a ab oty me xT wa & 6k Bean . | m \ - jes Vege vy thet . avy SDE b ef hk * a ; os 2 66+ Ria 110 A at = 06224 ae a as Mer A dauming vy.2. O9y Forte Giodes. given Ia’ CHA, Cale. @* No, ti ond ta ; e% 933K a< | > at a gt Yo. 1 ze = ler S woe a T= 10-07 2 aerEme a ov oat e ¢ eds Atl worms e< = Li (9) “Cate vo th the ghen ant. Assuming ww = O3¥ feos i @ and 0-3v fos On any ns: i py , ae Lo3 a Ge oat Mo ° e G©? 2 e @ wey toeielot® lo + Yor — 0-3 =O a yr = 03 No . Aa ae ee 2 voi = oF 2 mv (0a, 08). fms! Vp vay, aa i bv... Wel vonage sorte 92y (ia) Caleutate Toth the cht Showin. 1: Ga) Fa a pom diode sevface Leanage cursent 6 an leanage curvenr OF Yerise vortage of aev- wharis surface Gi weveree vokage & 3S ¥ - ” certain Impurities get developed to Geppore A Very Small fled as Busface lead Pes Dering the preparation of ctiete, acr088 the 6uskaees which were : (e‘lgat BL? Zageasy 82 *t of + Venable Ip fixed load vi 2 I52°FQ4 Tee) Me Tt . totmerr gat iste dye eaten 2 Mee ne i hs? + Tg 2 delay Nya d 1 isbe ae8 7 HO Me Te : No = 882 it pmecel 1 2 ad) 24a bo Ne Sau = Vinee 06 minimum curvane va 2 Knee ot Breandown voltage We = Runarmt Rowrse Rreaxdown Resisunr . cr * ee2008 08% ee ean an o =ap —# Breax down _ Neo —» Non Sscax Down The fosward Gnd Reverse ‘choractesistics Of A Zenex cliode Gre excany Same as that of aq fn diode except that a Zener chode Gan be Operated th reverse beqndown, Where as q “PEN Cliode” Shoend bnoe be Opzrated wrverse’ bak down Zens Bean Down.( a0) Bvdlanche Bear Down (6D) 0) fea Tonigation (F-2) @) ampact Torigation (ra @) bineas 4unccion (a7 Relativery doped less (@) Step. janetion . ( -Relakively doped. mae - a) ve 26 (Gree ee dy, G dv _ toah/%e- Oe e. ae eoaprana + 12108 —e Doping Sov Exum) Sma Letmand= 4omA AK “Legmin) ¥ Ye are not given, agaume it as 0 | 31g20 3 ideal afode - | @)- Fed ip Vasta ite Load « “+ e x te Fe 6a > 7B Croan” *hgminy = Bom 900 “50 ask By Ce == - tee AS Chind = Tacmin” Be Gada 2 Te (mags 3omR 2) Vatiave ifp fined toad Fa Pili) Hasmn - wea A Lscrmby* Te Crmryt Seegny =" 30 mA == - Asemoa) = -Facmand+ Ty cha). ; = Coma . “Map > B:9S%_ Bern). oh Cram) Vinge D2 1aSY iit ae Rie iicael ES WH £292 152Pug ceadure fe Solving RB Zenee Poblem }+ Identify Ideal os Practical ie 2. Breax down a Non Bsedkdown stars Peaeriarc eben eect onda chtide tea woe Shown h che % 2Gamw (a) The maximam rating of a Zener diode through Ine diode. 4k mayntaing @ conatont vortage HF camen a moalmem “Permissible Curren oeg not fan below Fo Rind te range of 2 for Zener diode # Ot 26 vegulates : ; 2y, = bonus ee ae Be Gnony® “2 Fa Conan) = Q6emw - 952% Zaeman) e:S0rR Se Crm Ath of Le cmarye HSA = Tetmin) jaote - : . ; NN Bipolas —Tanetion TFeansaret Appiicaiions:- Switch, Fmelfien, phase ShifterCte sige), OSeMa ton (1 eg C30) ts = ty mn kent fe*Lettero Kye Veg ost Yeeof The divection OF arrow Plow of camsent when Skt Sumbot shows the Emitter Sanction Pn disde Bg Convention all carsenes. Shall be encering the dive ctia 1s Fa gar |e? Current Components tn CB configusorion ~y may eo ons 2 a © Dyer tne ® Are . d L, . e ® ~teo + ce —» Applying beh. Oo Bo ® =) sf @. Fe allt *80 3 cee Pte fa oe & = 2 Clentne) . Apes 2 (le «O° Te ) : : ®, ages - Te € de a Baty . € a ) by BY = Ape fae St : € x a a. ary = tale 1° e 5 : ) rae) 3c nw Te Peed? € ) € 2 € 2 ”) j : a 2Chasacterisve table 3 . ls & 8 < J Width —~ moderate Th — Larae . ; . € Dopin Heavy bess Modexae 5 3 “ 8 . lee ;& 7 ef + Te Region of Apphaauan z i Operation ef Fa Fe Saturation ON. suonteh | @ q | eo q Re! RB Cur om GFF Sesten ‘ “ le fa Re Nama! Amplifie ‘ j Rekive 2 | fig EE iach etaverce Auenuatdy—m por as prefewed as € ; ty € : — veoatn used sreremae yy | gC ae — - leaves GO ~*~ i Ly. “Physically enters (40% day ete Phy : i ; 5 r € ete a 3 A Cunent due to holes ™ e € & a * | e 7 4 i > e§ Some holes teaching base moves to battery, *e5t, Toes. $° ef c: ~ 7 . | : ef ‘Teor? Reverse Cunvent ak FN unchen e! : « treet theo fiom B toc. 6 oe e € 4 4 S J e< fea —® Gurvens due to kheemally generated minority ; davies: - 2, Leana: 5st Tom é Sg —e Coens clue vo Surface bea 19 eve very coal Be Cyne 2dve kO Alatanche MUltPhEshin, . Scan be. e! fo pegieued a tee feoSpe fia te #0 be large tper Should be large tpg 119 ve lavae fo shoud be large. FH fp to be large To She'd ye be lange. Le iS the Ofp carsent, Te 16 the ip Current. Thos |e ast ie, cument contioled device Come for this cevice Acta-as Amplifier, te hoteg fiom = Shall nor e See ee eee ee pace sncleton (ie cae a thig 8) | saristy@Ng << bP o (a holes aan brave) Whold of Lase)y -% ) °) 1 NpAt (a Piobavimas oF home recommining So. . hase decreases). = . 2 : ; . o Lf these 2 conditions are Soxisfed Tpg me Tex ° : =: tng Plow. —* & to ® to battmy bE e s Tpy Slow > € bOB bo eos RE BO” bareery. to € : “ge fete a6 Epc : ». Zo py conauteres on the Op Eerrens, rig can bE _ Qehieved by “heavily loping Gminner - ies fF e. % Base cemsent Ip is made tip of the fotlowng components © Uy Electvond ener Wied base, For recombination ( from barte: > (27 ” ” ” ” due to’ ty Gomponent cae iar jeage Jum base que te Anco comvanen’ e. ee ; ) Noi of 'e anterng > vo- of e leaving 1 base - i€ e; there 1a. no tecombination in base, SFT Gannor ck Bt °) amplifier: . ° wnen Lp 20 » Te Towa: ia Tyee Tae 2 * Common Base Raward cament transfer Yao © eee 2B cuen gan: anaee aT {qyecion efficien ¢ 9 Sl pk eratnes eMnetenee] OF Ernseres Sat =. 4. eed = . i zy p* Feanapee Faccos of bade. tranapors cEOe(es) Be (18 a “lk Ste 1 oS aw wee p> Pe Cat 442? 4%) t apa) HAD, S * ; ae lee RA Temp t —* Tenot || ve e (fe x i | Themaii fam baag 7 tet I je Tob 2 peg bur load cussen: decreases - % iF ‘ ee Connot be used for amplification fb a Solution with, weep Pe @ohaane And incease the. . Greg. of =ovlector. So powes pes Gini area decreases | So io temperature . i 1G tha > It is Ehinnes Pos Mo 2 Ut wie Mi ' . fete Hy o> 4g em >. . Ph cliodes Connected bah co fe bvangieto Camplifier) hack th eileS cannot act jhe cunent 100 mA has 2 paths timwough 8 and Wmsough &. Bur a8 louis emough it and £2" oI, = Teo kbrougn B tS Shove curt wn "GL eas Cn Gi Gin tim Gin bits Gen Gy Gh, Gin Gn tin Gs PS GOe @ 6 we D 3 Bi So? LOLOL em wee OLe_LO_L®, @) eo : _ a polarities “oe Charge Caniers nea are crossing Wwe » 2 juncions A device which 16 exhibising brane fe + Bipoias Tonction 4 propery and hence called Franarseoy (5) (tae © ain x Th eatch of the Junction 2 charges ave C1068iN9 corners Bipolar wid th Kauly Effect //#aee vitth Macotacion /Base warrening —— of, = vert oon roms af Pp c : wi fd 7 7 a —er + Nes. coe + iv es) cy — 2 corr Vea th aoa mes te — : al Wer metturgical Base width "2, Ie vig! = eMective Baae Wp > Width Of DR ex Avalanche Greaxcown ' 1 \ val i | cet eos Bao CM) 1 | Max Roung 1 = bain (BYpr , 3Y"8) belt Ne Ht) FR Jz a Width 4, Wonract potential Yo + Pe Jo a NF, % * (Nn 6 RB ko E increases OR Penetrates More mo base ane Ba 1 hence Cunclepleted Width Wy’ clecreaaea, Cartier chorge ae ' Carers Which where Sitting ha Width oF We Nw get Confined tO A amalier width of Wal and hence cone Gradient increases and kence Tz increases Caz is FB ond hence erent should be due ro majorita caries difiusion) (2). RS RQ tO Te ineveased. Move and mora rete DR inercaaes mae and more into “base: “cand hence “emdepleted” width wg) ckereases more ond, mae With a wrath: of Wg Sbg available for “se. combInation |}, Fecombination wasless, Aow..with a edith oe og) <é hp civcilabie for Yecombinaion, “Fecombinavion Fershey decradaes. Nence Tpy tet “and rence! “ee 4 ( tee ted Gi. Ae larger to Te + oR. completely fills the base and hence emdepieted width “nel, beedmes. gera cmd hence “Ig 0 | and ‘hence transistor cannot cer ase amplifier. Ve cage fulness of Erancistor aS amplifles 15 veeminated - This * Scaled panip- tmeagh. @ ¥each through - errect “i : ve the eq) K2 Ato ten Ips0 7%: violated amd no longer acts as Sinplifer’- Speke fae These 3 effects are focind by cei eanly Memes we, ‘ i . 4 name + 4 a © NEB Contadia Wg! —e Thas ikis called * Ah = Baxky Vonage: —» the Slopes oF the cue meet a+ ? A Poine ~ “Ry = Cvtpin Resicrance: M4 —» PN Gune Aiode Cow be considered 2 tes a ftce AY) I | | na : | +) In Veg Ve Ze these is a alope Which gwes camplifedier I? Go Lo tawe cave of that cimother team © Added te Te e ae =) hee @f rece ser iy) (tr Vee), Oo end a ve oe son) thie “eq: iS valid only fo ee ne fm ce (as eB has ms & ston ) = fualanche Breakdown ~> 5 = 7 mat fe te B SS Aae ~ * KA = meneipkeation Bretor due to Avalanche meneiptic eases Bveg0 = Breas down “vortage 1) CB eh & open, >” : " ” u B open. ©, Bvega ts ce ORs oy ff alue to punch through & : " 7 . Bee i oer yeach- through . . Bk 16 iclependenclant of ConFqusation es yo BVpn + Bxiandoun ‘voitage due ©O Avalanche Greaxde 6 tt 1g) dependem on canfiguration Cea, 6) eo : c ) Manimem wering | man tating 6 dlefoed as maximum kB, 7 ae Can be Safely applied aceoss cdllectos yunction of a trans en 1 Veg > Brean, a8 Perea: teB HOM th CB. So D nthe Nv A Os ee < Yao YAS Veg Bee. a 2 - Proceedure to caw jp + lp Chara Oa: (1) jp Zand, Of2 V adea are choosen as fhclependent ' vorlabl = Civ) lf Nand op © atea are choosen as dependene . Pe ig Variables. Cd» v) : 2 : = a f eet ee =o (2) ip chava- #6 ctrawn b/w Yp's La on 2-anjia and Pv On y-avs vith outputs TY a6 vaviable parameter3 Gip chara 1S chawn- bfy AP's fv on waxs and O-V On y-axis with ips Lv as Vasiabie Pasamekey 7 e Tle - OJp Chaeq of CR om grounded Base Config ee Eo > M inv 1s Veg @= O-y —° Vege te e: | @e ee i ea ac € ; ec : * q . . AA te! . 74 es Bas . a * : oc _ wr | @€ ° : “a Ven . e¢ A pd: pes “sucitemenr(!) “ih “Gon ehlece 28 [Veg}nercases f° | BA Weyeagea fom %, kof, to 1g . Thrasa Shown mw fp chasa Se a Le = 4c + lwo : : ol c t For Ig: 40 ,negiect tego: i As veg t 9 Ry roted . By. Galy effect (22 47 f° Ka tntrease > V Fora, cma ’ fray tht. #. -o olf ieares han Fa: . Changer» Yt, oft has lavas oy change ofp chava has a Slope 4 garh lector config SJp- Ole chara. oF EC [Gwunded enter te, eee a> & exe, ce w oo 00590 Qo 9%. O_O OOM © 02 2 OPEL TOOL O_O le 'y 2 4 ye : tco, H tc> AMA Ans . tgs Ze. ootma ® 2 fg tTgstes holm ee = : pda ts PNP bxangionor JS. basea ih aerive region . Gren | etcimm-contne cee agave a42 mn: Catentare imam’ i" apgiqrance fx. EFA tor nagof a art. Gren Fang voltage a3 iso 78 (22 fad ofp twaisrarce it te = ome ue i: : le (4) fos a Bat Te = hmA Neg 2 4N- Quen Gary Voitag, a8 2 Determme te at Assume & AS Constant . Teekay \@¢ de 118 fo OPM 1 Nes ime POE yh | 7 |a¢ Iman ae : aCe) aso 0069¢ a¢ . Ler, 000098 (I* 12 ) st . ar chitin ac (5) Fox a BIT. Rey, Fe breandoon vairage 8 68 wh F as a Open. i20v. Assuming ampisical Constant as 3. Cal calere a i Fh, Brean down wortage th CE with base ops 9 a / <8 pibigg 20¥ a y Lyln Be i bce * Bieo! He) . : a) Be foey - . a ad G- Gren Ce cunent gain of a bansisros 26 OFF + Caleala he at 4 ag ccenert. gain . S e« pr 244 . -ea = ei (po a BIT ter aemA, Te gown. Cateutare e | Sa et ; . : e Orit . e if ol@ Fox a ck mode BIT Ty > town 44, egg? tu + Cakuia Le = (PHMeggr PEG =10%mea a n'a: <8 cong Tez 'GmA_, Ze swith F open 6 NA Galealatés” fe , Given. gain as 0745 -?) a 2 ote .) H Legg 2 104A 3 aa ' “ tes bet |+ Keo 5 = sa rm =) lo: In “& grounded -base Config voltage Avop acs, a4 = 6 ave Determine fg given & = 0.96. e J 4 © Tas BVO a ~ fez 0-95 mA -) . te 8 BENE 07 8ImR f ae ey {ys tg te = rostman i — ae ne. Devesmine ©, polne in tha QNen SHE q : str. Mee ) geht *) rates = Tea» 3 5 eves is) . fos’ : a oy Vega = te~ teat: = Gv. ° . ‘ E “a -point = CO, Fama). 7 2. : i 5 ee ; 7 sys ie 1 cette CBR Ay ene Se cTransition Region / Neplerion Region /Space charae! egon/ enna 2 CapacitencelG) 7 le fn Sa -S-S0 e 204 AA € L-__i ge a 1 wu git Foe step | Mlupt duncrion at Wty 's for near | Graded saneron | ? where Zkmekion voitage Mie Vy Ya ‘ i, 7 s BO Vo 2, Open, Ke Contact potential n lpg a : ; coef oe j vj*s Vonage aqeraas diode if Ca ve ve fr RB Peansition capacitance per unit G7e0 ) cee et R Aaonciion Capacitance” He Zexo. bias vg26 ype OF > Sker 6:8. We fears: fg Capacitance canbe varied by Varyng voltage - 1 os Zan be used aS valtage voriable eaqpactor ) varicar/ Varaatos diode SamboDiffesien Capacitance Cn) ng V vores, Bo as charge castes 2 (ee er St }ocet yr > Heie “a. V varies. Ep changes, but Z alee wavies: So Ens may affect the Chr So nosmanty fe 1S used ag static. Cap @a) Conaiaes, a step Janeion 8 5 oo Ge gab." a of |e in oF . 2 tie Je —> Ge alle in SE Gx : dna + <%/% roenn ‘ t ac age. PA . ¢ Reverse Saturation canent gerg Coubled fox every loc | 5 Vise we temp. Ce : i iP oe ge am en al ; . et Effect of Temperoture on voltage | ( . & —" Gebae Ty D> 3, act, £22 5 >t, 98 tot dang May arhect he SKr- ‘he cunsent thspugh ext changes Zo Vi to obtam ariginal covreot raoO d D) * ~ ® ” wet [7a een el! vo! FE 06 saige th emp, to Maintain Constant Cuwent theowgh Clade. decrease tre Ay. as m/e} —e Pocetical « at vonage’ across the diode by 22-5 mv the” Qhovevatae oF dv @ Nana” oniy For FE t (av). We covsene TOF cue was found, tobe incyeasing by av salse i tampenareie Caleatare Tq + Assame, Ge chode . Fevewe Baturotion carsants temperature Co effscrear ig te R2Te we es 28 as" ge tag wth [re . Ts Io* tr. 2 : ¢ ‘i ‘as A docan'? chang: . dx. Ate yas OT Loy camp) - 23% [%. at dn “ar rye) = ¥(4,88) § SPP Bor on Tye ita == (®5) A aliode 1S -Moaneed on a chasis , the thamal Tesisrance oF # Elm is seach thar” Samm Of ‘heat encray (S$ transfened ts Spueroundings fy 12a vaibe in. ctlode temp above Bare oundiing: Ambien Jemperature 1B 2g¢%C- and diode temperaruse /3 not allowed EO exceed 10°C above Ambien Wha 6 the maximum | vevewe. bids vonage thar may be Safely Connetred—acr Yoverst, bids voeage thar may be Savely Zonne e556 chode ao pba Dyt MR RARE CeChasig: Heat ink To Gafequara ctiode | Tower Generdted i diode Power Aiasiported by chasi Pour Geneated MW diade © w f, on aste «= = 0 Power cl ted by chags Ve Bw ycas-as%e ec. My % To (ar as%) 1o4A 7 “ voce co News ov Wwe : a2 Temection Feta effect Transistoy a, 2 2. 7ANy® (N-channet) “2e Np = +4 4%. (pe channei) Ze Vos *¥p = Vag Tye + Tye (1~ o. Mein =(t-® . ca (1b) vp . > zamerrotle [1~ (Yes Ye oe K “e = Vos a Bol ged QZawanyHn ee e. gas Height of Channc! Costance bi aares) > Hai height of chanre) EMective heighr oF channe | Cotetance. 4 0a) Braye effective hatt heise 6+ channel - hibye mon, eter 2benyeSAO DO & am ARF s »f) 4 oe Coe 2 ~ Ov d d ) 2 we we (B) AG we move from Hefe to right $9 tne Channel, voudge eee) Procpeaavely ereasing and hence Grote Junction Pv diode ‘ pogesavery deb mae moe @B. and hence Panetrazien ot bm hee um channel prognessne ry fe DR takes GQ ron anifam shape Increasta mme & mane From Jer bo FIQhE called as wedge shape: (4) Rehersorion of DR.t0. Ue lefe_ Middle and right ade a bee mane é 2 ay Since. 14 Yost % Vyge BY cage than Conesponding. “ne Vg 289 CASe. And, the Shape.'S still 1a mose..than case RO wedge" shape mip, 2Fe bat ~ : ) hetgm deciles the magnitude of deain coment wie Skabiiey and. vevmiuviy of Convene Fig @ "S corect ons i q Rq® 5 ergs - ~ Pencn OFF : vps Vas. ee oof em cab - @ const. + © ——e ideal piaen of () elem anal a ages @ we increase “be creases” £0. very large value - tvalanche breasdown 9669" and curent on OECUNS GOTIY - -\v =) Sav # breandor fon oil) OCCT JE Nag 18 faltiallg, jon and Breardown Pegi “Iv case Compared £0 OY ig deeper thon coment Rea! 6 Mpg For Vane* aay cage iniuqy a PR @ constant f Ok a leases value oF Ys ease , since Nag Ue 2 ev 482 - evortatrte—Reaiaka i) OR © 9 Sher can be used O8 WIAD sinfes atecag verging Gave, yolbags. tne 0G bw 0% © sesieronce vollese vaurae nesisteoe Meng. OP apt atti gs ohh few 0 KOZapar Resiacance ( Rag) Ue ip chara dostn't comey mach info So @ the transfer chara 1 drown Ns Ye is decreased (more and mae -ve) =) DR Increases, Rb y and becomes 0! Thus Ip =O “bihen Vag 2-G¥ (aay) Vos = tv Ceag) 9 diedes wih be Wh RG. In QB ctoded ose Stable @Is0 Channel =0, To 70 Auatuaion th Aig ®@, occurs’ epid'ithel wt ts stable + Dun to Iricteage 1 vag if fiqg@ occurs ond Ty becomes B10 and hence crop... ger0ss sesigtoss ind voltage gen ko N-6fde.. becomes Jexo Still the cliodes Ore ~veverse biased clue to “se Supply gven t6 Pt Gide of diode ,.henee ts time. f1g.6) Ba Stable seore - Pinch off. vortage Vp .i6: defined ag vattage between Crate % Source | Vea $%. Neg =O at which channel, closes (vy is ~ve. for N-channel dnd we -fm p- Channel) . an 0g.@".+ve meana +veycharged _ clone eer fons , existing 1” cleplesi pr of n-channel. —ve Means -Vvely chasged Acceptor ond eatating 14 DR of P* gare ew ses : a se . when Yost | as conexant, Tod > ‘Ip is Controlled by Ugg: So its a voltage, controlled Pevice the © % © charges 2 haa electric fied associated with Ihié ConwolS He Ip * Iq. . : Eleewic Reid developed across a junction $6 Cankroiling device cand hence canted the operoven 16 a, 3 keminal Janenon. Field GFlece Tangtern «00996 6 ® @ 76 6 eo RN vw) mo ~~ we ww ON we Lp Unipotar device i Lp Resistance Is high x ” Feta effect Teanaiatey 's cchpaner — P-ehpwewe Vp = facheoff vortags OR = Ohmic Region Ger 2 Gonseant convent Rearen ‘apa c, Bveacdoun Zegivn ea Satuvarion Region ears None Sarerarson Reger = Sag,» Dear Sakmarion carvene at Yost fos > Uowage Controlled clewice os ap uae Neseage verravleReataen — oc Dra Saturation come a 88 IN- Chanvet arer ® vg H2F (wr) ereneg gat een Rp,on = Dent ON Restera ce.ce ‘onaesuesion | : the wo The n-channe\ cn c@ cay pt tesminals Supporrs consent Conduction: So S and gers Gnd re ar G reverse biased interchanging 0% aS ave Shosted And pall dat nig one Charge Carsies (e) For the na our of “be. the arixous the & me einspolor device em eneers -ve given ac ¢ pushes a nechanee! + The two’ pt Gace,Brms q cliode D2 Comenr 14 operation’ .of (a fet dittecniare by Des “the Ossecuion Of axyon Plow of Fervent ‘When Gperavion he Vag? Constant Lee. “ose 2 there.18 a DR penetrating. mae to N ik “Rig@@)< the*Bap and bottom” cuwes “draidin fos” Vag? O « Sanespand fhe channel eRBk he Eerminals * tao & The Yee Shall be wil nor affect whe and “hence, Eke Symbs) does, Pot termi in exe dace jane tions nas Sumbol , Ciet it be zero) Shows the divection pon cliode 18 FI BD The diode 1 ‘1h Open cist ko -penerrarion of D2 th to the chanel ond wo Nos a ohm sxegion - acts q Sc bar. a R RS Vpg? . “Open eke .condivion OF ..Gave “enction pon diodes jk can act.as Resisea Tp? bineosly + Ths 1S) Dice the clevice by Tengen into 3 equal, parts along fenges ¢ Asea> F DR Y- | ett bo vigné voltage As we mole. Fearn and hence. reassronre V dup inreases wh creasing, concian* _ Tengen W each part thes, diodks. 3 at tof“ane Ineveases Ay eorrann doe) diodes‘ are ‘preaent- Go totally © 2 3 ar bottom .a@AS we move from | S0.ag tesigvane and feft to ight 1 the channel length | thoeases: Rut Suce TU Prom Jerr to wen- PR ThSal Vou iene Points of TFET (compose to 857) Lage controlled Device, 2 Inpar Ressrane is High 2. NO offset voltage —e Doean' need vz a8 aitcady there 19 < channel. 4. Onipolas device 5. Small in sige... ) aoa G. Better Thesmal stability a) 3. Rage to Fabsicavey 6.7 . 2 @ bow powes consumption a Applicarions ~? 1 Butter ) > 2. Volbage variable 2 op. We ». Mr vane t ol 20 4g ) ee a ) ) 4 de 2). Deteimine. the resistance of A Tre, whose specications oe 7 > ‘asa Follows - of peus Pa: 0-005 Am — Widt of DR on 2 ae home! each aide > 0700854" ) bd, om as hasdm = ee Cs Orr: Jengn of Channel. as : oar . neath side i De @-vy = width of PF on ea 2. 7 = 0-0625"™ - a abe a-(a-b)- Qi | en a , beaks: 7 “o : ST BEE BH cos (ab) a Ss uv(3) fin N- channel FET has Ipng.: mn, Vaglore) =-SV.» Calcatate Minimam vottage b/w 0% fa pinch off and fo, £ = Yescmind PY = Rtemp ==: (io Gace cement ie-- ann when Qs Yeverse, Croke Voleage oF PY caplied bo a FT. Rog to mn iE (a) yl Gr erie Game (Cyr - (is) Fos N-channel FET. given half channel height 3x16*m Caleatave effeceve’ hat “Channel height Alver Yass Yeh Ag Bxibtem Mos #3. see Soa = (CEJ ei 3 pe oan ete, (obo oes xieism, (1 Catesiare _ pineh~ off Volk age for a n-channel Fat given ae ant Nye tas xem Se 2 we Exe 2/em Vp = = 407 4, -3-300 we = eo esEpp = Bvt wrin( BY ) wo Eo >. «Tin (Mee) at ®e, 2 eT On (Nen Heavy . Doping 1 CTaaner) = Np? Me] [Pra Fe tev p> ep < © Ng rn Ey > 8a: 7 ve Namal poping Cpe) Neo ND Fen < Be >| Epp dev Nya Ee 7 -€o sty Bes Excenent Conductor Eggs Naganve REE Region un = Tipe varut Region » Load be =e Lp dus fear, valle Currents Penix woieage ax etn S Nig 2 Vaey Yottae woh age ae whnh 9 oaunets be g a e& T* J Eayinvcner Cr oF tutes dem ( Dus to heavy doping, width of PR ig about 100 n° Due khig very sman or. tunnel effecr will be obgewed cind s fe ig-called tennel diode» - es (ectoserls. ext) YZZ 2 Pied seorss (& eners) : Filled Stares Ntlto empty stares peg —e Donos Encray Band BER —e Accepeor Enesgy Band - 7 dn Ey there is 10> maser. Ehan that in Nova! h-eype Se So they accomodau. ¥ a ‘band of enesgies Po empty Stare in cB implies, there. 1 nO &, wheieas an empy stae vi vB implies, there fs ne & and thee is a hole “ihe. proof of enexau ciadagsam Srown tm @ JS Commented. Wh te Povowing iaiye : : 1 grandad energy Hageam. Se be init) the entities shown it alge Shown in ®.- he 23 henuialities Valid for ~ Shown *, 419 @ - Few ler conarant *o¥ =n 1@ 4. + Bow oceupaney definieion of Femi 7 eae win a lrelp 68 novation csed : easily doped tunnel diode are ors & an open cxk P-Nujunadon 5 4S Shown level 8 Savsfied Wy CHRMHKOCKHOHHO UHH WD a) GC. © ¢ ere iw em@ wy SC Using Enevg: a. ca }——-—-——zHlecreases (BD }-and_Anai becomes goro(@) - 2 formacion Deg ar Jo savisty Paalils © Exclusion Princip! ces ie aS Shee ehag &@ Standard V-T choractesenes Can bs. enplained Should be very navsan (i00 n°) Iniclth of clepletion, Region ey ext Ak. one..sicle. cf chode, Filed stayes, Should level empty States thes Aicle , ent the Same ghourd exise ns shown ih #a@) Wf tha Above LWO Conditions axe Satichled then crecorchtg Guantam meichanics 'é° Laonem-ftom, filled states, to em seared down Pere “By @ 2908? D> vot S cot (ie.openctt, w cide ral Jevel of filled store Cr) equals © as Pat vyh 2 Sod feet’) eam Fed £8 D Boeras Leanndtn anh. RB Cuprent from nto P > ve Ea Je ~ a gh haademe of Gnarh The resenting Covsene 18 voika ge AE Volko tH 2 Exisilens Conduction . Caliad -Lunmebmey Corvent ( Spang) THE: SSonyer® Same 2S ute Cavene Sn novmal PN code @& F & 36. greater than Enar of _ energy hill Bo it inoies down the energy level’ Bot the oom eumne diode (weared at cm.of W-Hu Pe) te has 6 + ereras hill 'go weg Enna HO 4s - OF op -kyve BF Open eke N Sicle & pushed up. Se Some empty scares Canosa 40 becomes parallel Lo. Aled Biares, ‘The vonage! Panard based 9 qe, current Rom pkey Ce Geom We 7) 2 8 te tne @ region of Graph . ‘Ihe Maay Carvene occurs Graves me wlkeo Filed Staves » Baga moe eo moves ap #£« 5 from %ero When all empee AS FR creases Forward Curent Stare ¢@) increases ©) reaches. qa mMorimam. faite onGe). 1 (a) nue co FB decreases and hence Fu? &o ° Which 13° valid Gera pw diode and hence fom now 16 possible /6 FR PN diode Onwards Whatever current Fo wore wall also be posertic Thy FG f bogies end hens Chara of PAN diodé Grea are Sapalmposed oP co Fcord f Keinvel code -Bhown by Gaghed and doe 1% te chara Chace AS FE increases Stasting from vp, Kunneling susvene Stoxts fom. man dlecreages did. becames Jero o¢ O07 Macases Starting From vy , diffugion Curent Staris bom Zoo et Vy and iacieases exponentially . vy occuss SSyNty thon ® cand hence diffeaion Curvent crosses tevo SV Lefine “Lentcing coment’ becomes Never becomes 3e10 8,6,0,0.6 © pat [<= *tanoes * “ert | Feanner i a0 or @ fom crosees 410 OW vz < @® OD pet curven’ beigy ‘ 4 Can be- obtained ba applying Vi, Ya,v3 - Pence HF called TUR. Ppphicarions (eam me (oe a 3 gg Switching device”. qlaw od Ca vonge )(ar Aoxor Cawave vonge iar fore at Com be ersed a8 high Spee Ib can be sed as high freq 08¢ ny We the design of SHgirar exus- he load Nine. drawn intersects GY 3 Points =) meth! a operamg pomrs occas ( fig] Béio and hence net eGeerrd & BRN RN ADsRS placed Nt) ro A Ge Tunnel cliode whieh has foal 29 Bun Mind ne vatue oF F', Sus! ae 1S fee’ 7 sve Wegion th v-1 Chava a enhibit how | iy was Coneition "40a zo , i 2 2 tory | : ae rat6e th 2 2° ! av ev a ws | ig by 2 ¥t2 | = ' VST Von ag. Consides: a tunnel Atode cancler open exe condition. Cale Ladin 6F ab bry qhen Nine ngs Ear wlles®, Nis o 320; jer Eos la bx alt BJo~m ” w ad) eae” ven TF an ma : : I NB: The -equariiia “quen fa. “Pen diode fet NI, %no-, "Fo Yo~ gy ccan be used ae ony eit Gumeion' OF cing electrome’ 1 ‘device. ° ~ : | : ‘ 5 € : y 2 on 7 * ees a2 , ook a 5 a a ‘ JakeOpto Electronic Pevices | : Len | ae . Flechac te lighe Light to Bleckie . : Coptica sources) Copticat veveceos ) . : $ Atameds EPL (Dnece Transition &, eaten. ‘4 ees : ” e combination av ee 1 Band ec 207405 yee (Radiation) land gar | \@e Fo neot ‘af tndivece Teansition ar i ae 1 Rezombinade a ¢ Bondgar Sc y/ 4,5) BS, 4 When e- Fan Pom ce, energy gots weleased this ges “gtombined with. hole. v8; When faling Tom cB; the e may La to intewmediate stare (E lever) and "hen fan to VB - kyangitions and Sc ave Bach exansition 1S called Madtvect er fan directly fail ‘Called: ndiveer sc! Stailasly m some Se fom c8 w@ Ve —e Dect Sc Gahs 16 a divecr se Used AS pr chocle and jeue to tms atveck tvanaition ie emits Nqnt avia called LSD: . Bappose we need to gue RED Hgnt by find A gf Reo Get “Ee feom a2 lh? Get bre marerial With this BGT gives Rep Rghk Ja not available, MN wo! ox rsa ofpey 16 the material Zush 10 2 Gem) materials \ 4 Pnaraials , G0 tha “Eg, is: atedined + ae mined, 1S called binary compound, 3 2 Temard. #2 suarenay | Bary: Gale, dl Temoy ° Gone? Quatenny 1 AnGoRsP «pert (13H eacapen Bom olin Side) + Pract Bandgap se * Prward bias Rlectsolumniscence + injection lem ni scence ¢ Radiative Recombinarien + Spontancous:.6m1 sion pdvamages Disadvantages A Smai age —~ 2. hess woigne Wor highly anachena! “Not higiiy Electrolomni scene . > hotds injected to N ® & EOP, they combine to ave lignt . ) . 2D injection. lamniacenie’ d Recombination gives light 2 Raciiarive Recombination ) . 2 € Leép cannot be used h Monomode Fixe. 3t aso cBcares Dy Chromatic” chs tortson . 2 7 f ~)h dee CoE ; ‘ 2 ? 2 of eS CcH Laight Amplification by Simalared Emission Radiation Ciasé®) 62%. 3 68 i : ¥ a: » ca you fe i |e f« 4 3 aieen : va o . | pbaorpitan Spontaneous | Sumditared : | — Emission Emission : aces oe ee j Popastation ‘Anversion (aging PemPing feconigae)) alte wncen fe beating haquid » k 4 aby -ReSonator, cavity.» Bord econ tae gy | oN i Advantages pig advantages 4 4 Le Highy avectonal 1 Tnwert the advantages of EPs ae Highiy ehvomarié Laser can enter mono mode fore due 0 highly directo 2 ey on ae. Tre & abaans Fs A4Zsume a photon of A with 6, > and goss to CB. Te SB onse arcs. afrec Sn ib goes down to ve. ak ENA Decors 6G Converted 20 fight => Stee nore cB iS digtusbed by anemey Ghana cress) ve kogethes with Anothes possibilizy befor T Inctas on Palla down & Gmiesion ye Btn Photon, Sa the * photon { be fare the Th of & fabsg Resonator COVES ” ore produced 1” LASER's Population Ameraton'- Using elecutcal excition. moe and mere ane pumped to CB > Ove proron clistocbs PEE” EP pooduce & diacues pres Thug the amternally Kght amplificaw eee ee photon 3 ‘cB qiving + Phokons vhorons son vaKes place - Pr a a a a a aaa Boxd Lage: —e I1d° 1 mK e onB Fie proce aeteccor . at a “71 ToP vip Photo coven £ P aro Photo Covers. a Le Quontom Effictency Y= of G 'g Generated Toy t ~ j oe suo: of Photons meidented Po/t¢ Re dponewity R = 2p 204 empfmware: 3 gr mn a i . - - Bop? Tot Tes ~ oP — we te ent due to s yes Pivalancie, Phowikade Coro) “ee nave > ne Puatanche! . oO neaion ¢ : 1 € sitio Ferd: Fre € = Repack sonhaceion (096 - € me m oa ~ E tp : At om é he £2 Piequences of tncidene photon A 2 Wavelength oF" a = = Encident optical ponies ~ = Planer's conctant Phovo y Juhen photon #8 incident on PEN G) % GO. cc produced - Vey ate called Photo caniers The gers arvacrrd vw +o appieeae 40 “ve of battery sesateing pociuca -phato caviers Ey > 6 ( Dark casvent is ckfined ag carsene Ehsough 4 More Fe the Ty (Rewrse. devectox 1h the Absence of Batuvation cusvene clue co bemp) wtp Gundtion hag lage E+ fo when Photon lacidents m tes ped’ a due to avalanche: inaitipiicetten , 6.0 66 OO 6 OO OR ee OH OSH BAG Jage, o> a1e generate (rary fiorieics ) * Gon be Considered a8 (ray p PLN phate diode 15 conarrucced oF) Gafts:, hich had & hand gee & 1aa'ey « Rinck the longest wavelength Mor can “dencrate Conte bet 5 Dranta™* ~ (4)-4m aq toons. 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ASsaming minimum e aunent Lmoagh US® In aetive Stare AS ign jeatealare € nt a ! € € : be eae (Ce eR OT 40-2 ue - 9 ale [Abr . _———* €: » 7 7 okey t ¢ GED an the Ene Shown” Renee diode. 16. cided to Paoreck 4 € gavanometes which hag 2004 Fad scale rating Ord S608 © internal veaisranee 3° Should show fam Scale csftection gov and fv; 16 Ins2ased beyond 2ov then manen Vi . Carient iv _Qalavmomercs shoud ema congrane at 2004P + ~ 5 Find & O& , em, S600 Doom‘ oe - Fatminy > oor —» Ideal diode ’ € * = 7 1 — «. e! ww) vi, i °° 5 o 9 8 6 e. 5 #0 50 0 FNED 20 200 90 9 ‘ py ato am ED a eg tem ta a‘ Vie 20° We Zener cltocle 15 not In BO. 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S x82. easy aa F gh Saat Pay Seen ae Zener diode.18 i» bieandown Feplace ie. sby WS eat CH | Saver {vay 2 pws dy Melee ee ee . a 30 (a) Caleatare Covent Enough Ik vesistor . assuring Zener re 1h breawdown by Comment on, operation PSY Gate Cute Clare ches F ® axis Gee os AN, 4-56 my 2c Lav = EUIZ MO emt pen > apy 3e + | j= : *} ze e : = prs 04053 | bd aa 7 ° . aoe a = G2 nteey 5 : Fe Fee 8 ne . Gecnnique’, Only one Option with BEArMRA - : [Favshicimar ines Graaitinciteer | foe e e : © ‘. € : € ‘ 7 3. cS e © ; o oo. © oO‘| hemes net Design ~ ‘David Naria (ch 2%a) 2. Analog vist esign - Pouglas Philips - chap 13 9s) ‘vobleing Tran gictoss La, (mesra) C . ne vane Jret mosrer amo PMS crnos PAL Cmnes 8 “de . : th Seth 35. £65 Allg y Gon) tz, fy. 6 "rc> bo dee 2. Amplifer c ; Pye © not peiteécr - =» Bad seiich, Gosd ampnter . _Trer —e Grood! sistteh Bad amp mosret—e Gest Switch, Noree am p Digital crea cases moster” aa it is a best “Aood. sesath te MLE Neiy lange Sf there enters move khan 4 milhén branes ters, Buch clesign '% Called Very Large design aé ef Scaling — ‘ Tnvevcomece 9 Anything Which connects bla 2 device é Ee chip —» ting less cursene —* Electron merconnen 6 ore chip —= large ,raues large curren» Blectrsea! shkevconne® » Anterconnects have B asecctared amb tt “due ex Flowing tmoagh ik. Tf ang ober rikerconnett H& 1m° Weimty oF Ginorher one pie prouuies a EM SSL alec 6 eee Panes chasipanon atso a — Maveases “ <¢: aoe _tsem 5 Fe fener] face baw cy ft e rage ei wae a e NS per this theory 1 Pe the powes Nssiparicn Shocid be Greater Ss them goes Bat Ehar 15 not the case Key new sategrared . : . re feo © ch System : 1 Syatem € 2. Modete. Module 1 Boiom=ey y mo c Pale a ¢ Pipproach e a en loae x1 c , Ipproc - Sav ae cue E 4 an Aotee © Deview a mor LEE ers, . J © | ° B.Gene [NOM pen.on cancece . 4. eheuit at bal Qo ns d nee avoraet Wy S &-moerer © isanenas ° , “ This conchhun _ 4 nw sal tobe (oP ap 2 OFF 8 Rone SL FCP pan clp Beaacderon 2"tin eonditien mua: be vemoved and thia can ba done eaing &-Mosfer aera s Dewee L Lie si, Ge Con imenred ai 200% Moore's: law F Gordan moore —* INTEL Founder. He proposed a law th’ 146% (vad El 200%) % For 1a to 24 months : G) No: of bxansisrers double (2) Gige oF Alvea of chip reduce 2 Limes Sei Operating Fier double ca) Supply, Votkage. vedas by i (haw, doesnts have proof vizg¢m —e 2years > Ohe gererarion th Flecuione Seid + Shecwiey ansanted Lvanaisea th 144¢., “Tack Wslby ented Ic mm 198% Mee qreended 16-10 more tansiars) | 1% Caped Moore's avs Any “one 15 “sariched ocr of +, design: fry 3 Af ang Hive Satisfied then the design 18 bese a ant can never be Satisfied ‘| Es o @ ® ® @ @ 2 OO 8 SO © @ O60, ©, 0, 0,0, 0,98 0 OO OF 2 (ee date Boe = oar Teapnologe Paramerer(y) pear — was. bah _% Channel beng (0) a niet Za al | st 18 defined as distance t—eL2 ‘between source to rays : t ee 1 7 t : ck f Pe dawetenc ss :Techimase?. fo -ve vatage diode is aD -ve cycle Only one Option has ~ve cycle apte “ity: ts ip? lpFB ew 5 a oT aves Gay =) Ws70% me ‘ PSP } a 3 £3 Conny? OP - go. . Ewer = Greeay ZEN) a eee deco eet SS (rece). 3 go - toe -Ver? see) 20088 Ks = pe ame Tomar = RezmA- O-Sme 2-9 3-mm es Nesame wataov) —s lise = ted = RS Lom) <> Non Brea Doe 2 Simon) 2239 MP rs Nok the anewer so . ease Nae oe ea Ti Ti lomin) 2. Es Guns 7 PRCwra> = Bn ~ pesume a4 2h poe Tq? feCmind vin (Bov) > Gs temo dem eA oe 0,.8,.0,0,.@,. e x < 2 x xad . afeea of brani —e hength of channel s Hf hr ge on the Sige Gt the dlewce can't be decreased ~ Eine sence een eel ee eae rca huh not Get improvement in applicarions . Bur we can decrease S Lransiarer Side» Keeping Aevice 3130 constant gecomedaing mac a Cems uy Consegaence of Moore's Law - ig vedured bY Ryew 12-24 m as length of Channel 2 2 bimes 7 . c ek > Te o 2 24m aa ee © i @ A € i Laren 10 I + re ~ € vam no § y 4 € Foo nen 4o\~ PP Motile Tech o € * ¥ le so nm ee > & ae ae Ot Gabmicon Deep sab lta deer Lote! 2, Tecw Micon Tern Seomnicion Tern» “ Symbois hmos etyoe caroranon a | Seoonann yc ragim Reaisn. B a “ Pea doun Con elugione« (1. car oft Region Tyg 20 T Ygzo CP Linear Region 2° tae ® Vag cae ependany near, @ Sarurorion Reatén Laege Change in Ydg Srmil change th tas (4) Breavaenn Regios - . ange | Chai atas Sma change » Vee os ee P- mos. t-w “chara oily) Such encaite are Called Symm- cmos cKi (2) Zags che negative “ds Mas, Yad. @ € @ é é 4 4 § é é é é & é € 6 « « « q « « « €COOMA OHO O90 00.00 oo 6 € To 0 | 93 = Yast Vay cmos chars gs 2244 Lut off umes anderstand emos Chara = Sctarciion ‘nim 0S. rc Vas =v Nas *20 Ngss 49 tronafoam ws, Sa. Rignt Sine vgs by Von 0 Linear (Pmos ) [+ Tee t Pat arg Lore | t Barvans crt Pmos Chara ro AmosSaturation Region can be divided into L- Sar, M-So1 % U-sat then both amos ¢ pmos aremsar d Fee - Te avoid Imi! panchtioh Mga increased Cre, the pings. chava Shifts Shghhy Lo eft) thes clone by increaging the Size oF ~ to vemove. €2 from. table @ (this gue te condinon) 1 | * (2), 3), me oe pros, Wancidec: must alee aes be 3 Limes larger than Siac, oF Nmos, OIC : Complementary F (PHOS EmC OYE. SFA Se Direct Logie design ary eo 3 cy emos ® a. Complementary Leqié Pestan RT design a Function F ‘complement of the fanction sheutd bya designed frat - placing a nok gared Sip Yesalts ougins Fanci £ € & € € < an ey @ 6 @ 6 e0 e@ e080o88 66 @ @ ~~9) OO On, a 5 § § € € e | q c Gi ¢ ¢ 2 oe ee O7O@2e8G2eeseeoeoeeeonoeoneaeneanrxae ana By A Ma OD OFF LEG an > Yew Gqervgs ct Ky! Procaaa “edn B Gonduacanion “ non’ Hy = mobidity = emt [he = Aton 2 Je som ces na Cor 2 Onide cap = 2 Repect ‘Rario e Tho on? Box é é —— s Fin * *3-4(9a) box 3 pyr Oride thncuncer © 1 Bead Capachance Per came Owed Eat Sse yh oWhen Mye 4 thereaded, the channel will be qraduattey feomae the hannet «it be -& Channel wit be faming linearly thé vegan 6 catea Ineo region ‘The maaimum channel 13 channel length. Ak thes tageant Ube Pert’ Saturdced 9 Saturation Regis < > Yop : t * The D mag not be Yeadgy bo accept thee ec” 50 the cx © oe Aows from. % to 6. Ths WS Called reverse Satasanon carer (5 to b cane If WeReveage vgs agar. es tbe ofp censene” Siang J and becomes ere -—we Pach off Me A carta: “pone teverse Carténe ‘be Eomes more “vhan Of cemenc —5 Beeax down + the op voltage betomies ve The" whdlé “process 8 Galled Channel modulation QD» Wheit” Vag eF will net move from S$ tow > 170 called Care off Region - os 0 to (2 wine, Vass Ineveased “eT: will move, fiom S channel 19 feemed linearig. -'- Called Wear ¥eqion (5) When vga Ve ~Maatmeim Cop), marimem channel 1 formed 1 2 galled. Satararion Region . Clos = constant) (4) When vgs >\bp clkain. Stared “Sending e back #0 Source « The. 16 Called everse .censent GO» reverse Saturacion Corvene fo Pe tn eta ten tnt mint at at al at ed ot Flowing ¢ ee oes, Called pinch off vonage i 7 pai _ a A () when Yas 19 Increased “Tasther, Shannet becomes — Seve 3.g i called breqrdown region... a . é hw Whole process 3 Called Channel modulars &yen eee 0 € 2h. Total =< aty- om a How many tsandisens . sangise ” ae sex Lo design xeon gate = -Gpmos » “GS nmos = 27 £2 (warnn) 9 @8+ 58) s £ = fa mmos# 2. CAD? | amis ac BE 3 tal 137 Nog fet CBB “= py re of 2 ge :0 MOL minimige ea pressions pee wk b = BBY ¥ Bo not Gonver Sop #9 POS| meee eel Coa, [os 6razeie a i - Dom @ f= AB+He+ Acnt Ad i + i 5 ey Blagg 3 aoe v Press deaymes . Dar 2rled+ attarey. = 3 mos D> Bye 20 Fepplications of cmos t: Power Dissiparion i -e fin I: Total powe: Beodefined + as : Paynamt ot Bick teanage- f + Zamplorey abininaced by” ' increasing Sige of Pmos o H Dynamie « Power. a a ope: fea © wR aie 2OE Mee] 22 yi = Lincy Nag —> Supply votage ff @D Sevitching” power ‘om a B cu» lead cae . d Jeon a. “Torat no: oF Bons & =© Pranaition” Rewaity from. még to Lea which happin i. 2. an ern 54 bi 2 Consecutive birs @ ay. Th MH 1BIB 2 477 Bammig distance aa renee < © c c goooeaea0ga 2 olpeo tes ao 2 oleh 2. =) obra, op » fF aoe DE Nop Sv vgges then dpes. Bat Nip 40eSh allows ep ars (vielanes ob Gupply bounce occure WL) © 0 the elp goes to S and due to Vgg 21 9 Wear, “Drops to O- —e Supply bounce Rur for vgs ‘0’ knis’ sol 9 be su + Grund bounte tloeank occu 3 Nmes ie Strong ‘eo? and Strong". | awit Pros 6. wear’ Con atusions UW) Both Pres and mag Ghould exice func “Shodid be designed fee | (ay Complememary of the i athe. Sige ofthe pmos Mast be 2 times larger than | i Sige ov Nimes Prod must be Connected fo Supply # ~wmMos to ANd pres 16 .Zalled’ Sema NM05 18 alled Sting ‘a! 7 To design “f= paren me) ; BD. neagn tia aC ind: Complement. The node at whieh Pow + Pon are connected 8 Senes Panite) fe Sy C oe a a] : : IC thas G s * G) Design AnD gare f. fe , 4c 4 PRS Sevies . smog am 5B. ee | Foral = 2Tx2= 4T —, a aw ES OG. By a Gh Ge Gn Gn Ga Cn On 0.89808 98 38 of AD DD BR BD @ £2 hares foe Pe shi. een ae olp © aren a i S Von 2!5 9, vaghs day 1 When Seppig: vonage’ 18 iereased by Av, dynam, poner 2 | Meveased by 26° 2 ' 8 | When Supply Vokage § Mereased by’ 0% Cagnanne.."* ¢ | oended by 126% e | e ! 7 : ‘bed ile : c aoe ae . : : 5 Bea Tower (pe power ° ei ae > i ° ‘ € } at Focavic *. Terane™ “Pe |. | | cannct be © i paren ice & Fstanc Die current © | aan, sei 4 seducey i : ae Nep? lev @ (point et (point) _ a) Grom —e2 “pysarav e Ras Braric power cannot he reduced in guen~tachnslogy 1 tuhen Eechnolegy Shvinxs Static power vedaces < Shoe circuit Power — Cer 3G) thia_can be @liminated by maintainin be_ eli 9hueauage Powe? a Feo depends on te = Pig + Clem top Semi conduc kt 1 t 21m 9 mm and hams Gsnm--2 n amp Was When the Lechnology shims, tap elect 8 asasing we Power’ Generared by leaxage eusvent (fey) 3 called leawage power x fn higher technologies Ltynamié is fredomi nant, bur in* wer tect ve 1g clominaeing . Jower technologies Feguage “@ gq Conclusions: Ae Higher Lechnoiegrs unaind power eminares Gnd i» \s 45% of bokal “power . : % nik. dt when the technology. shrine | StQue power * seduces” ( exises th ail technologies “2 can be imirared maintaing, different -S13eS 0 e 23 6 gk bbeanage Power Fominares at lowce technolo gies “an of oe eyes oes (2) High Speed Systems Qiks Visa OOK RA RARER EHEOC0.6,4,0,0.0,0,6.0.0,5 faa, ae yeto ese comre § 7 1b 2 soomie 12 Gon me 2. Capacitive 2) Inductive BRO CHES Dd. Rre ckrs- ”‘ @° am" Lggeg 1 OTE Re Class) - How mach time t takes tO each node A nek O28) Te the delay Uabrh ata tbe bore = C3), LE Longer dives que laiges clelaija. So shares wives are Prefers | [. Opensinnt on, net of 21082 Sections: : re cere | i i 4 Be RRs elegy of each, element 2 Tarte aC vay ica 6) redaced (af the length of interconnect ig ‘jess than Smm bok dt no: 6 creed’ Seeudnd are 10 | : 3 tea bly & bo lomm Eotal not oF cross: | car “ap “the lendjtin of ine! Bectons are 20° Fy an cmos. design ind length of interconnect, can, never. BOcor: 1” Greater than “tomm - 3 } BPN Bie crs TR aa ; e coe Tr Q The time Veonstant OF ALE CHL @; Bee ewe kime conscane doesnt en'st es — Delay can we Measured thro gh—Camn setter _EOO'S _ ~ 1 2g. SPICE(1). Fin the Region of aperacion of following Che 8) node a oy é 8 FAD HOM HO y oav Ma 9 2650 ae Ngee 3 Mae's SY yen = 8 ae Nasi? (vaes~ ¥en) : We 2 Me Vague enero (Cay Ma) & Yan Ale ) Magi 3° a 6 6 6H Barer von Mer) (Ngea- Yen) 9490. 8U MGs ass 4 3 251 ) Seruyarion (b). find the Sizes of bvansigeurs oF Finct bre Tories oF aSpeck ALIS , e- fei = Tder Kn a6 24 es) Ke 6 “gan “esd * Ay Km (HL) Cvgsrvad In Cox (2), C9627 ¥ed® “Ween Ve)™ 1. Be _ Vase a)” 2 (ae) 2(0:24) Clg ne Bd : on Lee @. % omicle thichness = 120m Find onide Capacitance - CORREALE SAE K66.0,0 sto, Gayle esa x1et) €Q 3. © @ 8.0. O00 conn eee e ee © 2 a) H, = S40em beg Sm ieee epee eee Vee” 3 Con 2 (BC t ese) So Ks Mn Con (22) = as mA a . Calealare * oy ss vesiseance Kas 130 \ cee ete i Qyge kn {Cys - Mew) = Yash wae _ far Kn Wys Mn Vee eae 2 moxie {C42 Ro rar} : PRP TBH Cg) Catetiate”* Cements For the Follows voltages Bins fon vy, cosy @) Vga = av, ugg 1 t¥ au, dyed” co wage ug adi" @) Ugg av, vase : : % . ageilicses aa f | atvug vn) 732 £085 4 os amp FCP Oalgs vin) = te AY as : atygs Ym) =k Yds © saruvation / breaxdaon fay = ame - (4) tags — EAS « \ ©) Qas-vm AE, 6 Yas | al vgs-um= te < Yas(6) Calealare aq pam of folowing cr von tho 2 “se 7 KL ae ifp > ov Vyp < Yas 7 Re EP? lewar ot Op °° Ayes G@- vys7 PF Vae - Rota 7o x ‘38, E Vgg = BOK Ly fo win a6 3 é : < a % wey fh oe. k,e DsHe ve Mya resu cole 2 kk tm me 6 BY By GN Or On GA GN GN Gn Gdn Bers Bm2 = a5 i 4 I si 408%, Coot down : 5 INGot thie cooling dawn i G Shaped Shouid be changed : lenm 2 Emi mo at the Inqor cut 1 0 fen We (40 : € ea a wh ‘absication. Principles . al Base Steps € GI — meeaiizarton e| (0 Walter Fabreqgtion 3 - G e; (7 oxidaven fo a e wer qe PaSéivation 5 " A élean t a (8) Tateernng, masning: photohtho graphy je: elean chin , _ 1 e @ pitfusien fhe pmasion . a — Dene ine i S o G) ton implantation o @ Pepoaivion © £ . a UW Wiata’ Fabsication. eee e The colour of si°ia, dam brown (loons lina! black Partesming Pautemng of G4, are Fosmiect 4 SETS Ba os ae ~ “* cadniam Sheet P- Svs bene TE Photo wep he used, Such Process 16 Ealled Photo hkhocyraphy - PD Zz van ~~ aa Am owe lesoO 9 eOnen eo @ @ © e € € € € ¢ & © ¢ € G@) Pre. Ditfasion’= En Parewning seage’ OU pays cll ney Zledn Orie particies Completely... By ways bre lef aver Sending ow encrag Onde particles cue removed Pawe's-ant- he positions of G,4,» cne famed. P- Subatrare - ce Ton (implantation = oe ie 5 maining» The fist 4 steps of fatmication tones either high temp high enévaa'e:" the conc will be-xeduced -hence implantin:gy the *eapectve ions the conc’ Zan be gained baci (© Reposition Bay depositing 1 tent material neds Sec 9 Osc’ Gnd P-kype makeria near G_ nee 16 Fosmed + GY wrieatnjonn Pop cae cas “Ca 8 Ofed as metal b o8 Ooh AMO haa e Contact Swice 1444. (Tul then Sea, & wed pj) C#) Anneating : aot teocte Ry Sending He aHs 2i exhibits Yadioacwe Nata ak tre radioactivity Popery con be topped A Passivatran—— ee o oa see ee Oe e004 e He a Bumging dosn the temp 0 oom temp 1% Called FOSS mahi __cm) cleanchyt Too edges of 0S ate Peaatiy Gnely Cate Difrerences bls, fabrication Steps o Nmos ¥ Pmes Ch Thea ciffer wi Q) Wafer fabsication (ay Lon teplanavion > Deposition Differences by Fabrication Steps of EM-% DM=NIMeES.« They diffes wn ty water fabrication —* Cisnm # (oredom), (2 PitiaséionCbxtve 1h),-+ CS % 0 Shourd be Sams deep) Crveposition —e C4 +B takes eqcial amount oF nie) Depletion moda MOSFET Limos Capacitor Analysis 4 Geoppert oxide? e2ee! i 122 fd P Scorare ose ance Beeady Stare s Dur to Stopprs We holes cannot Vga 7 fnwe ro S @ D. fo > cone (a5 i= 0) Conse’ A > Aan a € € € ¢ cf € ‘ & < ¢ 4S ol) J] text. fi ® c: en ©... 2 a at ete, : & tg ese c 6 ete. vb . s ; wosavtsi) - cS a i 2 = o-e4V C@e) : € - | Tmeahord verte se c ' x Because yg 6 -ve! hence ig Called mversion Regex, ; : \ Eo | FNGs = ~os2vt9 ov. M bee. ave cteplored at thé top.of the. ~ ey Soares Gnd-theg move towarda the bottom “ef cource e| € Thevefng. iti. coed Geplesion region c © Fe NGS +0 8N ho Bev, M thee “ene pectwidignin at tna tp'ee G € Seether see Ol na Us ae ge ee e Leg recombine © ili holes’ of dace and a Sixeng Regawe Gerd a Kenmid hie ™6 canted Ae cermentanion Pesen a € — ns : Co HE BS MSY Becgate the sotice and dian cre Saal } Potential lasge movement of e- Will Moe mave fom sre to drain Sop ML aed Flat band region eV nie Mes. c-v. Charawe Myo Hiveahold voltage which Seprares TF # Be ae Veg Plot tand voltage 1 oe ones a @ whan Superake,. bhicuness increases CV Cave Moves cM Lowards . tefe. . thveshed vokage decease: nS je BubSiace’ Votes bhicunese # tinvesheld wilage aie Yes \nvergelg xelated # The max clistanca carve moves tonsids lett ne? IE Scinéerore thickness smoeases beyond Gonm, holes o« Bubswate will det eneagh enesgy to’ bseak Stoppers onc : enter eto Source and cram, huge ‘ecombingtion taves place, thar damages me device - g¢ . TERR AvEN DRA amail-com Ge a g 2 480 | xe comiy Ain Bike Pemeles , . ax H a a a a a a ar ar, ar