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Etc P2103HVG PDF
Etc P2103HVG PDF
P2103HVG
SOP-8
Field Effect Transistor Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
30 21mΩ 7A G : GATE
D : DRAIN
S : SOURCE
1 Jun-29-2004
NIKO-SEM Dual N-Channel Enhancement Mode
P2103HVG
SOP-8
Field Effect Transistor Lead-Free
Fall Time2 tf 11 20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current IS 1.3
3
A
Pulsed Current ISM 2.5
Forward Voltage1 VSD IF = 1A, VGS = 0V 1.2 V
Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / µS 15.5 nS
Reverse Recovery Charge Qrr 7.9
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
2 Jun-29-2004
NIKO-SEM Dual N-Channel Enhancement Mode
P2103HVG
SOP-8
Field Effect Transistor Lead-Free
3 Jun-29-2004
NIKO-SEM Dual N-Channel Enhancement Mode
P2103HVG
SOP-8
Field Effect Transistor Lead-Free
4 Jun-29-2004
NIKO-SEM Dual N-Channel Enhancement Mode
P2103HVG
SOP-8
Field Effect Transistor Lead-Free
mm mm
Dimension Dimension
Min. Typ. Max. Min. Typ. Max.
E 1.27 L
F
I
G H K
D E
B C
5 Jun-29-2004