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New Marx Generator Architecture with a Controllable Output Based on IGBTs

Article in IEEE Transactions on Plasma Science · November 2017

DOI: 10.1109/TPS.2017.2766879

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THIS IS THE PREPRINT VERSION. THE FINAL ONE IS AVAILABLE AT: IEEE TRANSACTIONS ON PLASMA SCIENCE, DOI: 10.1109/TPS.2017.2766879 1

New Marx Generator Architecture with a Controllable Output Based

on IGBTs
1 ´ 1 2
Yahia ACHOUR , Jacek STARZYNSKI ,Andrzej ŁASICA
1
Military University of technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warszawa, Poland 2Warsaw

University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

In this paper a new architecture of a high voltage Marx pulse Rch Rch Rch S Out
generator based on IGBTs is proposed. It allows continuous Vin

control of the output voltage by acting on the IGBTs activation

time: ”On-time”. The final after-charging capacitors’ voltage can be S
higher than the double of the input voltage. A simplified C C S C S C

mathematical description of the system was developed in order to

find a relation between the output voltage and the ”On-time” (an
open-loop control law). A SPICE simulation was implemented to
check the expected performances and to verify the developed
model. A three stages generator was built according to the Rch Rch Rch
proposed structure using commercial IGBTs with a maximum
output voltage of 3.6 kilovolts. All results were compared to check Fig. 1: Classical Marx generator
and confirm the validity of the proposed architecture.

Index Terms—pulsed power; Isolated Gate Bipolar MOSFET (loss-free gate control). This allows IGBTs to
Transistor (IGBT); Marx generator; controllable output; cover an important power region. According to many new
mathematical model.
studies, it is possible to make IGBTs with a voltage rating
up to 20 kV. Examples of some works treating high voltage
I. INTRODUCTION IGBTs could be found in [7], [8]. However, the IGBTs
Marx generator, shown in Fig. 1 is one of the most popular available on the market can just support few kilovolts
pulse generators ever due to its simple structure and limited depending on the manufacturer. Some examples of
efficiency. It has been used for decades to produce high commercial high voltage IGBTs are given in Table I.
voltage electrical pulses in an uncountable number of We should mention that for all the proposed structures,
applications. Since its first invention in 1920 [1], many changes IGBTs could be substituted with power MOSFETs in terms of
and improvements were added to the original generator in functionality. However, small differences make the first one
order to improve performance. A big part of these changes better suitable for some applications, while the second for
affected the switching system because it influences others. So to make a choice, two main parameters should be
considerably the dynamic of the generator. One of the leading considered: the first is the power range. In general, IGBTs can
candidate to substitute spark-gaps are semiconductor switches handle higher voltage and current than the power MOSFETs,
such as thyristors [2], BJTs [3], [4], MOSFETs [5], and IGBTs. so for high power systems, IGBTs are more convenient to
Recently, the use of semiconductor switches in pulsed avoid the combination of MOSFETs in series and in parallel
power field experiences a fast development for several which complicates the driving system and raises the switching
reasons: high repetition rate, robustness and controllability, losses. The second important point is the rise time. In general
long lifetime and simple driving. In this paper, we’re interested MOSFETs are faster than the IGBTs, so if the rapidity of
especially in IGBTs. It is one of the most successful solutions
in power electronics due to its interesting properties such as
high switching frequency, acceptable power range, simple
TABLE I: Examples of commercial IGBTs and their
driving and the most important is its full controllability. charac-teristics [9], [10], [11], [12], [13], [14]
The IGBT concept was discovered and developed in the Manufacturer Reference Voltage Current Rise
early 1980s to provide an improved alternate power device to rate (V) rate (A) time (ns)
bipolar power transistors. It represents the true MOS-bipolar Dynex DIM250XCM65- 6500 250 400
TS
integration in the sense of intermingling the operation physics
HITACHI MBN750H65E2 6500 750 3200
of MOSFETs with those of bipolar transistors [6]. In other
IXGF30N400 4000 30 55
words, it combines the advantages of the bipolar transistor IXYS
IXEL40N400 4000 90 155
(low resistance in the switch-on state) with those of
ABB 5SMY12M1731 1700 160 130
Corresponding author: Y. Achour (email: yahiaaachour@gmail.com). Infineon IRG7PSH73K10 1200 75 110
THIS IS THE PREPRINT VERSION. THE FINAL ONE IS AVAILABLE AT: IEEE TRANSACTIONS ON PLASMA SCIENCE, DOI: 10.1109/TPS.2017.2766879
the system is a priority, then the use of power MOSFETs
is unavoidable.
In pulsed power domain, there is a lot of works which use
IGBTs/MOSFETs as switches for pulse generators. The
following paragraphs of this section are a small state of the
art summarizing the most important ideas treating the use
of IGBTs/MOSFETs in pulsed power generators.
Baek et al. in [15] proposed a new architecture for pulse
generator based on IGBT with a 2kV output voltage and
40A current. The idea was to put several stages of boost
shopper in cascading. Every stage uses an IGBT as a
switch. This solution has the advantage of high operation
frequency (several kHz) and the possibility to change the
pulse width easily. A similar work can be found in [16], [17],
[18], [19] with a modified architectures in order to reduce
the number of diodes and the semiconductor switches.
Another architecture for Marx generator was given by
Zabihi et al.[20]. The main idea is to charge two groups
of capacitors in anti-parallel through one inductor. Using
a diode combined to the resonant phenomena, it’s
possible to charge the capacitors twice the input voltage.
In [21], a structure allowing the control of the voltage level,
polarity, pulse width and the frequency of each pulse were
proposed. The topology was tested using 1200V IGBT for
output voltage changing from -4kV to 4kV and a pulse width
down to 300ns. In the bipolar generators category,
[22] proposes a new architecture with reduced number of
switches and a double power charging used for the
treatment of tumors. In the controlled voltage category, [23]
gives a simple solution similar to [21] based on changing
the number of stages contributing in the discharge.
A particular work was made by Haozheng Shi et al
[24]. A special HVPG was developed. The output
waveform is completely irregular but controllable i.e the
shape of the pulse can be specified before firing and the
output waveform will accurately follow it. The voltage
raises until 123kV and the pulse width down to 4.5 us.
The whole system is controlled using an FPGA.
Another interesting idea was given in [4] and [25] suggested
the use of transistors operating in the avalanche region. If the
time the transistor is subjected to secondary breakdown is
limited the BJT may be used as a nanosecond, high voltage
switch without sustaining damage. Baker in [4] used this
technique to make a 2kV Marx pulse generator with rise time
of 1ns and a jitter < 100ps.
Eventually, the use of IGBTs to build pulse generators opens
the horizon to a large number of possibilities. However, all the
listed works share the same limitations: the output voltage is
proportional to the product of the input supply voltage by the
number of stages. In other words, to change the output voltage,
we must change the input voltage [15], [16], [20], or the number of
stages contributing in the firing [21], [23], [24]. This can create
some problems especially in some applications where the output
voltage must be rigorously controlled.
In order to surpass this limitation, we have developed a
new architecture. It has the ability to produce a controllable
voltage from a constant input supply and without changing
the structure of the generator. This is very useful for some
2
applications in biology where they need to apply
different electrical field strengths with different repetition
rates on some tissues or bacteria. [26], [27]. The next
section explains the principle and details the
mathematical model developed to describe the system
and to extract the generator’s open loop law of control.
II. PRINCIPLE OF OPERATION
The general structure of the proposed generator is shown in
Fig. 2. It consists of N stages, each one contains a storage
capacitor, an IGBT, and two diodes. All components are
connected according to a standard Marx structure which can
be found in literature [5], [20], but with some changes. The first
one is substituting the charging resistor by an inductor, this
allows us to create a controlled resonance phenomenon, thus
the capacitors can be charged to higher voltage than the input
one. This means that the output voltage can be substantially
than those of a classical Marx generator. The second change
is to add an output filtering inductor. Its main goal is to filter the
charging current to not pass through the load. This has two
main advantages: the first is to keep the load out of the
resonance phenomena which means that the control law
becomes independent from the load, the second advantage is
to eliminate the output voltage appearance in charging period
which is one of the inconveniences of the standard
architecture.
It is worth to be mentioned that standard Marx
generators, using resistors to charge the capacitors, have
always a power efficiency lower than 50%. This comes
back to the charging Joule losses which are always equal
to the stored energy. Obviously, that low efficiency has
serious consequences es-pecially in embedded systems
(when the generator is supplied with batteries), which affect
considerably the autonomy of the system.
In the proposed structure, the charging of the capacitors is done
using an inductor according to the following sequence: at first, the
energy is transferred from the supply source and stored in the
charging inductor Lch, after that this energy is transferred from the
inductor and into the capacitors supported by the supply source.
The final capacitor voltage is controlled by the amount of the
transferred energy from the two elements. The only losses are
those at the level of the inductors’ resistance and at the IGBTs.
Thus, the power efficiency is substantially higher than that of the
standard systems.
In the following part of this section, a simplified mathe-
matical model of the system will be developed. The
different operating phases are investigated and modelled to
formulate the basic equations describing the system in
each phase. Finally, we will get a usable general relation
which gives the output pulse voltage as a function of the
invariant parameters of the system and the control one
which is the IGBTs on state time denoted Ton.
1) The first phase – discharge of the capacitors
In order to facilitate the model development, we start with
charged capacitors. The maximal voltage at each capacitor
terminals is denoted V0. By turning on the IGBTs, the dis-
charge starts. Systematically, reverse currents, caused by the
THIS IS THE PREPRINT VERSION. THE FINAL ONE IS AVAILABLE AT: IEEE TRANSACTIONS ON PLASMA SCIENCE, DOI: 10.1109/TPS.2017.2766879 3

Lch D1 D2 DN SN

S1 SN-1
Vin C1 C2 CN
Lf R

D0 DN+1 D2N-1 D2N

Fig. 2: New architecture of Marx generator.

Lch D1 D2 D3 S3
Vcmd
S1 S2 T on
Vin C1 C2 C3
Lf R
Von
D0 D4 D5 D6
4 1 2 3 4

(a) Phase 1: Discharging of the capacitors t

Lch D1 D2 D3 S3
VC
S1 S2 T pw
Vin C1 C2 C3
Lf R
V0
D0 D4 D5 D6

(b) Phase 2: Energy storage in the inductors

Lch D1 D2 D3 S3
t
Vin
S1
C2
S2
C3
IL
C1
Lf R
Imax
D0 D4 D5 D6 I0

(c) Phase 3: Charging of the capacitors

Lch D1 D2 D3 S3
t
S1 S2
Vin C1 C2 C3
Lf R Vout
D0 D4 D5 D6
Vp

(d) Phase 4: Waiting phase

Fig. 3: Schema of the contributing components in each
oper-ating phase (active elements represented in black)

voltage applied by the charged capacitors, try to flow through

t
diodes (D2; D3; D4; D5; D5) and force them to turn off as it’s Fig. 4: Waveform of the different system signals in each phase
represented in Fig. 3a. The voltage between the collector and
(From top to bottom: The control signal Vcmd; Capacitors
the emitter of each IGBT starts to decrease until zero. This
must take a time lapse called rising time which depends on the voltage VC ; Charging inductor current IL; output pulse Vout)
used IGBTs dynamic. After the full closing of the IGBTs, all
capacitors become connected in series which makes the
output voltage reach its maximal value denoted V p equal to the dV
d2Vout N out N
number of stages N times V0.
dt2 +RC dt + Lf C Vout = 0: (2)
From the solution of this equation, we can extract the pulse
VP = N V0 (1) width denoted Tpw, which is the time needed for the full
The capacitors start the discharge in the load as shown discharge of the capacitors. The solution of (2) is very popular
in Fig. 4. The equivalent circuit of this phase is a capacitor — it is present in any textbook on circuit theory. It can have
discharging in a resistor and inductor. Then, the output voltage three different forms depending on the value of the parameters
can be described by the following differential equation: R; L; C; N.
THIS IS THE PREPRINT VERSION. THE FINAL ONE IS AVAILABLE AT: IEEE TRANSACTIONS ON PLASMA SCIENCE, DOI: 10.1109/TPS.2017.2766879 4

For small values of the load resistance, the role played by 4) The fourth phase
the inductor Lf can be neglected and the time of discharge can When the current through the inductor cross zero, the diode
be written as Tpw = 5 where = CNR is the time constant of the D1 systematically turns off, which prevents the energy from
RC circuit. But for high resistance loads, the contribution of the going back to the source. This marks the end of the energy
inductor is more significant, so it cannot be neglected. That’s transfer between the inductor and the capacitors. The system
why in our model, we prefer to take the general case Tpw as a remains in this stable state until the next cycle (Fig. 3d).
pulse width without explicating its expression. 5) Equation of control
2) The second phase – inductive storage From the previous phases description, we can build just a
After the full discharge of the capacitors, the input voltage single equation which can reflect the behaviour of our system,
forces diode D1 to turn on (see Fig. 3b). The current flows It gives the output voltage as a function of the different circuit
through the diodes, the two inductors L ch, Lf and the IGBTs parameters and also the control parameter Ton:
because they are still closed. The current through the inductor
Lch rises linearly according to (3) (we can easily prove that the q
2
load resistance doesn’t influence the current): Vp = N Vin 1+ ! (Ton Tpw)2 + 1 : (7)
V Formula (7) shows that the output pulse voltage Vp is a
in
IL(t) = L +L
ch ft: (3) function of activation time Ton which is the control parameter
and also of the natural frequency of the LC circuit which
reflects the resonance phenomena between the inductor and
This phase ends by turning off all the IGBTs, The final
the capacitors. The multiplication of these two parameters
value of the current in the L ch inductance, denoted by I0 is
gives birth to what we’ve called a ”controlled resonance
given by (4):
phenomena” mentioned at the beginning of this section. This
V allows the amplification of the input voltage and the charging
in
I0 = L +L
ch f (T on T pw); (4) of the capacitor with a higher controllable voltage. The trans-
formation ratio between the input (charging) voltage and the
Where Tpw is a constant parameter, because it’s a function output pulse magnitude is always bigger than the double of the
of the erected capacitance of the generator, the inductors, and number of stages. According to (7), the transformation ratio
the load resistance (see the first phase in Fig. 4). that’s means can, in theory, be infinite. But in reality, it’s limited because
that Ton is the only control parameter and it must be greater it’s connected to the charging current which is limited by
the resistance of the inductors (neglected in this model for
than Tpw.
simplification reasons).
3) The third phase – charging of the capacitors
An important question, that could be asked, is how to
After the IGBTs opening, the inductors’ currents are forced
choose the system parameters? More precisely, the values
to pass through the capacitors which make them charging (Fig.
of the capacitors and the inductors. In order to make an
3c). The equivalent circuit can be represented as a voltage
efficient design, it is primordial to know the application of
source in series with an inductor and a capacitor. The final
the generator, in other words the load characteristics. The
voltage of each capacitor can be deduced by solving the second
capacitors’ value can be determined from the energy required
order differential equation describing the circuit, given in (5).
for each pulse which depends on the application (because
2 of the full discharge of the capacitors). For the inductors,
d IL 2 there is a compromise to make. For high inductance, the
dt2 + ! IL = 0; (5) charging time is long, which limits the repetition rate. For low
Where IL is the current through the charging inductor. It has inductance the charging time is short, but the current through
an initial value IL(0) = I0 given in the previous phase. The the IGBTs becomes higher. So the compromise is to choose
1 as low inductance as possible to maximise the repetition rate
other parameter ! = p N C (Lch+LF ) is the natural frequency and not to destroy the switches.
of the circuit.
After solving (5) we get the current expression given in (6): III. SIMULATION
In order to check the presented mathematical model,
IL(t) = Imax sin(! t + ); (6) a SPICE simulation was done. The following system parame-
ters were used:
2 Vin2
Where Imax = qI0 + (Lch+LF )2 !2 is the maximal current Number of stages: 3;
and = atan I0 (Lch+LF ) ! is the phase shift. Input voltage: 200 V;
Vin Capacitors: 100 nF;
From this solution, we can extract the expression of the Load resistance: 768 Ohm;
maximal capacitor voltage V0 and the charging period. These Charging inductor: 19 mH;
two parameters are very important because the first one gives Output inductor: 12 mH;
the output pulse voltage (1) and the second limits the maximal Repetition rate: 100 pps;
repetition rate of the generator. IGBT on state time: 150 us.
THIS IS THE PREPRINT VERSION. THE FINAL ONE IS AVAILABLE AT: IEEE TRANSACTIONS ON PLASMA SCIENCE, DOI: 10.1109/TPS.2017.2766879 5

4000
This can be explained by analyzing the discharging step (the
OutputVoltage (volt)

3000 first one). The load is connected in parallel to an inductor, so

2000 for a small value of the load resistance, the load current is
1000 large and the effect of the inductor is insignificant. But for a big
0 value of this resistance, the current through the inductor
2000
becomes larger and the influence of the inductor is more
Voltage (volt)

1500
substantial. This behaviour can be investigated and proved by
1000
studying the equation (2).
Capacitor

500
s

0
IV. EXPERIMENTAL RESULTS
(A)

0.8
The generator prototype (Fig. 7) was built and tested
u

e
n
c

r
r

0.4
0.6
Charging

in the high voltage laboratory of the Faculty of Electrical

0.2 Engineer-ing Warsaw University of Technology.
0

-0.2
0.0198 0.0199 0.02 0.0201 0.0202 0.0203 0.0204 0.0205 0.0206
Time (second)

Fig. 5: Simulation results

The obtained waveforms are presented in Fig. 5. The

four distinct operating phases, discussed previously, can
be easily recognized.
The second task, checked in simulation, is the
efficiency of the generator and its relation with the
control parameter Ton. This task cannot be done using
the previous theoretical model which doesn’t take into
account any losses, thus the efficiency is always 100%.
Fig. 6 shows clearly that the efficiency of the generator is
a decreasing function of the on state time. This can be
explained by the fact that the longer on state time, the
higher charging current becomes. This current pass
through the inductor which has its own resistance. This last
one is responsible for Joule losses which increase
quadratically with the increase of the current.
From the same figure, we can notice that the efficiency of
the generator is strongly influenced by the load impedance.
The higher load resistance is, the lower efficiency becomes.

Fig. 7: Experimental test bench and view of the prototype

85
RL = 400 Ohm
RL = 600 Ohm
RL = 768 Ohm
It consists of three stages, supplied by a DC voltage source.
80
The used IGBTs are IRG4PH50K, a product of International
Rectifier company. They can support a maximum voltage of
75
1.2 kV each. The control signal was generated by a spe-cially
(%)

designed control unit based on DSPIC30f4011 micro-controller

efficien
cy

70
of Microchip company. All other parameters are the same as
given in simulation section.
65
Power

The experimental results, captured using

60
WAVESURFER 3074 oscilloscope, are shown in Fig. 8. It
presents three waveforms corresponding respectively to:
55
the output pulse voltage (blue), the first stage capacitor
voltage (green) and the input supply voltage (red). The
50 black cursor indicates the turning off instant of the IGBTs.
50 100 150 200 250 300 350 400
Ton (microsecond)
The different operating steps appear clearly and correspond
exactly to the mathematical model and the simulation results.
Fig. 6: Power efficiency function of activation time for The used oscilloscope gave us the possibility to take some
differ-ent load values. measurement presented also in Fig. 8:
THIS IS THE PREPRINT VERSION. THE FINAL ONE IS AVAILABLE AT: IEEE TRANSACTIONS ON PLASMA SCIENCE, DOI: 10.1109/TPS.2017.2766879 6

Fig. 8: Experimental results (Blue: output pulse; Green: capacitor voltage; Red: Input voltage)

1000
RL = 100 Ohm
900 RL = 200 Ohm
RL = 300 Ohm
RL = 400 Ohm
800

700
(V)
vo
lta
g
e

600

500
Outputpulse

400

300

200

100

-100
-10 -5 0 5 10 15 20 25 30
time (us)
Fig. 9: Sequence of pulses at a repetition rate of 2000 pps
(Blue: output pulse; Green: capacitor voltage) Fig. 10: Influence of the load on the output waveform
(Test with different loads and the same activation time)

Input supply voltage 200 V;

Capacitors’ maximum charging voltage 475
V; Output pulse voltage 1.4 kV;
Activation time Ton = 75 s;
Pulse rise time 654.5 ns.
One can notice that using just three stages, we have
obtained an output voltage pulse reaching 1.4 kV what is
seven times the input voltage.
In order to check the sustainability of our system, a test was
carried out in repetitive operating mode. Fig. 9 shows the
output pulses triggered with a repetition rate of 2000 pps. The
results prove that the pulses are identical and the
repetition rate is very stable.
Fig. 10 shows the pulses obtained from different loads.
As predicted, when the load is small, the discharge of the
capacitors is done completely through the load. Then, the
classical exponential waveform is obtained. However, when
the load resistance is high, we get a partial discharge of the
capacitor through the inductor. In this case, the discharge
waveform is quasilinear. From Fig. 10, It’s also clear that
there is an attenuation in the output amplitude. The lower
THIS IS THE PREPRINT VERSION. THE FINAL ONE IS AVAILABLE AT: IEEE TRANSACTIONS ON PLASMA SCIENCE, DOI: 10.1109/TPS.2017.2766879 7

1500 experimental results confirmed the capabilities of the proposed

Ton = 50 us
Ton = 70 us architecture and prove the validity of the developed model.
Ton = 90 us
Ton = 110 us The proposed new design has several advantages
such as an output voltage controllable according to a
simple monotonic law, a high gain which means that the
pulse voltage (V)

1000
final pulses can surpass the double of the number of
stages times the supply voltage, a high power efficiency,
a simple structure and an convenient control circuit.
The designed generator has some limitations, some of them
Outp

due to the limits of the semiconductor switches such as low

ut

500

power range and slow switching. And others due to the

architecture by it self like the non-possibility of creating square
pulses and the influence of the load on the pulses shape.
0

-10 -5 0 5 10 15 20 25 30
REFERENCES
time (us)
[1] Haddad, A. and Warne, D.F. and Institution of Electrical Engineers,
600
Advances in High Voltage Engineering, Energy Engineering Series
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500 [2] Hegeler, F. and McGeoch, M.W. and Sethian, J.D. and Sanders, H.D. and
Glidden, S.C. and Myers, M.C., A durable gigawatt class solid state
pulsed power system IEEE Transactions on Dielectrics and Electrical
voltage across the first capacitor (V)

Insulation, 18(4), pp. 1205–1213, Aug. 2011.

400

300
200
100
0
-100
0 50 100 150
time (us)
Fig. 11: Results of different activation times, same load test
(first graph: output pulse; second: capacitor voltage)
load resistance is, the higher attenuation becomes. This
can be explained by the slow switching of the IGBT
(500ns rise time) which creates a small discharge before
the full closing of the IGBTs.
An other test with different activation times and the same
load was done to validate the controllability of our design and
to show the influence of the activation time variation on the
output pulses. Fig. 11 shows in the first graph the pulses
obtained from different activation times and in the second, the
voltage across the capacitors for the same experiments. For
short activation times, the charging voltage of the capacitors is
also small and so the output pulses. And when we raises the
activation time these voltages rise also.
V. CONCLUSION
A new architecture of a solid-state pulse generator was
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describing the system was developed. It was sufficient to
predict the generator’s operation. The simulation and the
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