Physics (www.tiwariacademy.in) (Chapter 14) (Semiconductor Electronics: Materials, Devices and Simple Circuits) (Class 12) Exercises Question 14.1; Tannen whith fhe fllowing statements te: (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent atoms are the dopants. (c)_ Holes are minority carriers and pentavalent atoms are the dopants. (d) Holes are majority carriers and trivalent atoms are the dopants. aswer tats tras mje set Girone the mfr ain wh the hlt ac inmierty crv Anny emia Shake vaca pecans sa as tqiore ae doped slice sts Question 14.2: ‘Which of the statements given in EAnswer 14.2: ‘The correct statement is (d), Ina p-type semiconductor, the holes are the majority carriers, while the electrons are the minority carriers. A p-type semiconductor is obtained when trivalent atoms, such as aluminium, are doped in silicon atoms. Exercise 14.1 is true for p-type semiconductors. Question 14.3: Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E,)c, (E,)v and (E,)ce. Which ofthe following statements i true? (@)_ (E_)s< (Eder < (Ede (0) (Ex)e< (Ex)ee> (Ea (©) (Ea)e> (Ex)s> (Eade (@) (de= (Eda= (Edee Eanswer 14. ‘The correct statement is (6). Of the three given elements, the energy band gap of carbon isthe maximum and that of germanium isthe least. ‘The energy band gap of these elements are related as: (EJc> (E,)s > (Exe Question 14.4: Inan unbiased p-n junction, holes diffuse from the p-region to n-region because (a) free electrons in the n-region attract them. (b) they move across the junction by the potential difference. () hole concentration in p-region is more as compared to n-region, {) All the above. wer 14.4: ‘The correct statement is (¢). ‘The diffusion of charge carriers across a junction takes place from the region of higher concentration to the region of lower concentration. In this ease, the p-region has greater concentration of holes than the n-region. Hence, in an unbiased p-n junction, holes diffuse from the p-region to the n-region. Question 14.5: ‘When a forward bias is applied toa p-n junction, it (a) raises the potential barrier. (b) reduces the majority carrier current to zero. (6) lowers the potential barrier. (4) None of the above, Eanswer 14.5: ‘The correct statement is (9). When a forward bias is applied to a p-n junction, itlowers the value of potential barrier. In the case ofa forward bias, the potential barrier opposes the applied voltage. Hence, the potential barrier across the junction gets reduced. www.tiwariacademy.in A Free web support ta Edlecatton ee 2Physics (www.tiwariacademy.in) (Chapter 14) (Semiconductor Electronics: Materials, Devices and Simple Circuits) (Class 12) Question 14.6: Potro at wh ofthe folowing teens re coret (dune enter and leon shine snr aod oping concent (3) tase regon mas every nang dpe (center ncn fo rerd uaed ecole ncn eves (9) Boe ncn wel cole nuon aera se Eanswer 14.6: The crf sateen) For anststr aa, he fuaon muse igh doped so that th base repo very thn. Aste enter anton must be for blaed and calecorjneton hold te evra sed Question 14.7: Fora transistor amplifier, the voltage gain (a) remains constant forall frequencies. (b) is high at high and low frequencies and constant in the middle frequency range. (is low at high and low frequencies and constant at mid frequencies. (4) None ofthe above. Eanswer 14.7: ‘The correct statements (c) ‘The voltage gain ofa transistor amplifier is constant at mid frequency range only. Itis low at high and low frequencies Question 14.8: InhalF-wave rectification, whats the output frequency if the input frequency is 50 He. What is the output frequency ofa fll-wave rectifier for the same input frequency? Eanswer 14. Input frequency = 50 Hz For a half-wave rectifier, the output frequency s equal tothe input Frequency. = Output frequency = 50 Hz For a full-wave rectifier, the output frequency is twice the input frequency ‘Output frequency =2 * 50 = 100 Hz Question 14.9: For a CE-transistor amplifier, the audio signal voltage across the collected resistance of 2 Al is 2 V. Suppose the current amplification factor ofthe transistor is 100, find the input signal voltage and base current, ifthe base resistance Is 1 kA, Answer 14.9: Collector resistance, Re= 2k9. = 2000 0 ‘Audio signal voltage across the collector resistance, V=2V Current amplification factor ofthe transistor, B= 100 Base resistance, Rn= 1 k= 1000 Input signal voltage = V, Base current = Ip We have the amplification relation as: Voltage amplification VR, _ 21000 BR. 100% 2000 =0.01V “Therefore, the input signal voltage ofthe amplifier is 0.01 V. Base resistance is given by the relation: Ry = t= OOP = 10x 10-%uA = 7, ~ 7000 in ‘Therefore, the base current ofthe amplifier is 10 uA. www.tiwariacademy.in A Free web support tn Edlication. ee 2Physics (www.tiwariacademy.in) (Chapter 14) (Semiconductor Electronics: Materials, Devices and Simple Circuits) (Class 12) Question 14.10: Twoampiies re one on tr te othr in srs (cad). Th ft ample as volgen of 10 andthe econ havavohageiainot 0 the pusigal s001 vole cate het aes Eanswer 14.10: Votage ano thescon ample, Y= 20 Inputs tage 2001 Duty gal solage" Ve Theta alae gama o-tagecasaded amples gven bythe producto alge ans ofboth the ages Wehuveti elton ‘Therefore, the output AC signal of the given amplifier is 2 V. Question 14.11: Ap-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm? Eanswer 14.11: Energy band gap of the given photodiode, Ey Wavelength, = 6000 nm = 6000 10-"m ‘The energy of a signal is given by the relation: Bev 3x 10"m/s xax10® But 1.6 x 10 ]=1eV E=3313x 10] 331310 16x10 ‘The energy of a signal of wavelength 6000 nm is 0.207 eV, which is less than 2.8 eV ~ the energy band gap of a photodiode. Hence, the photodiode cannot detect the signal. 313109] 0.207 eV www.tiwariacademy.in A Free web support bn Education 3