Professional Documents
Culture Documents
OBJECT:
To Study The Base Characteristics Of JFETS.
APPARATUS:
JFETS(2N3819)
RESISTOR (1kOhm )
CONNECTING WIRE
BREAD BOARD
DMM (DIGITAL MULTIMETER)
THEORY:
1.) WORKING PRINCIPLE OF JFET:-
A JFET is a three terminal semiconductor device in which current conduction is
by one type of carrier i.e. electrons or holes. The current conduction is
controlled by means of an electric field between the gate and the conducting
channel of the device. The JFET has high input impedance and low noise level.
CIRCUIT DIAGRAM:
QUALITATIVE ANALYSIS:
JFET PROPERTIES:
The following points may be noted:
1. The input circuit ( i.e. gate to source) of a JFET is reverse biased. This
means that the device has high input impedance.
2. The drain is so biased w.r.t. source that drain current I D flows from the
source to drain.
3. In all JFETs, source current IS is equal to the drain current i.e IS = ID.
PROCEDURE:
RESULT:
A field effect transistor is a voltage controlled device i.e. the output
characteristics of the device are controlled by input voltage.
QUESTIONS ANSWERS
Q1: What is Gate?
Ans: The gate is the terminal from which we can control the flow of current in
transistor.
Ans:
1. In a JFET, there is only one type of carrier i.e. holes in p-type channel and
electrons in n-type channel. For this reason it is also called unipolar
transistor. However, in an ordinary BJT, both electrons and holes play role
in conduction. Therefore, it is called as bipolar transistor.
2. As the input circuit of a JFET is reverse biased, therefore, it has a high input
impedance. However, the input circuit of a BJT is forward biased and hence
has low input impedance.
3. A BJT uses the current into its base to control a large current between
collector and emitter. Whereas a JFET uses voltage on the gate terminal to
control the current between drain and source.