Potential Induced Degradation:

Potential Induced Degradation was first time observed in field of photovoltaics in 2010. Potential induced
degradation represents a loss in the maximum power of a PV module due to increased voltage with
respect to ground in the field during operation. As solar energy is getting more and more popular these
days so the PV plants and PV parks are getting bigger and bigger by increasing the no of panels/modules
serially interconnected in a string. As the no of modules are increased in a string, the voltage is also
increased with respect to the ground. Lately, the system voltages have been increased from 600V to
1000V, and recently the system voltages have reached up to 1500V. Due to this increased potential of the
solar modules between the two ends of the string, the potential. The module that are interconnected
serially via string, depend upon the grounding configuration of the arrays. There are three different
configurations possible for grounding the system poles. First two cases, in which any one of the system
poles is grounded resulting in the panels/modules/cells positive or negative with respect to the ground.
The last case is in which no pole is grounded as result of which the system potential dose not remain fixed.
Due to which one end of the string has negative and the other end of the string has positive potential with
respect to the ground. This phenomenon is referred to as “Floating Potential”. Because of no grounding,
develops a voltage bias of the individual string units with respect to their frames. The potential gives rise
to Leakage Currents that flow from the solar cells through PV module frame, mechanical support, and
insulations.

The nature, cause and mechanism of PID is different in both n and p type solar cells. In P-type solar cells
the PID phenomenon is basically due to negative potential which gives rise to shunting of cell as the shunt
resistance, power and fill factor decreases. The main culprit of PID in p-type solar cells are Na+ ions, which
move under the effect of negative potential from the sodium rich front glass through the ARC and
encapsulatent, and enter the crystal defects crossing the pn junction. And in this way, the surface
recombination increase by entering the stacking faults in the bulk silicon that may potentially overlapping
the pn junction creating shunt. As a result, the normal functioning of solar cell is disturbed and leakage
current is produced. The shunt resistance is reduced which causes decrease in power and fill factor.

In n-type solar cells, Na+ ions are not the reason for the PID. The main cause is basically the “Surface
Polarization”. When n-type solar cells operate at high positive voltage with respect to the ground. Then
either negative or positive charges (depending on topology) accumulate in the SiNx Anti reflecting coating
of the solar cell. As a result of which the front surface recombination increase causing an increase in the
recombination of photo generated carriers.

PID basic cause is still unfound. It does occur due to high potential but is accelerated due to various
environmental factors like humidity, temperature. It may also depend upon thickness and the refractive
index of Anti Reflecting coating, stacking faults in the bulk silicon, and resistivity of the encapsulate.

PID testing:

 According to IEC standard IEC 62804:2016 PID tests can be carried by applying -1000V, 85% RH
and 85C temperature for 96 hours.
 The test can be carried out through various methods.
 Voltage, temperature and humidity can be varied to check the effect of PID depending in these
parameters.
Solutions of PID:

1. Reverse potential of +1000 volts and Temperature of 100C is applied for 10 hrs for recovery.
2. By using high volume-resistivity ionomer or polyolefin encapsulant instead of ethylene vinyl
acetate (EVA) encapsulant or EVA.
3. By using TiO2 coating on conventional tempered cover glass chemically strengthened cover glass
or acrylic front sheet instead of cover glass.
4. At room temperature by placing modules in the dark for up to 150 to 350 days ensure complete
recovery.
5. Or applying revere voltage 0f 1000 v (positive potential) for 7 days (last four days with
temperature 85C) ensured recovery.
6. add a SiO2 Layer between Si and anti-reflection coating layer.
7. High volume volume resistivity over Omor polyolefin is effective in preventing the PID
8. The PID recovery test was carried out under the conditions as following: the ambient temperature
9. was 85 ±2, the relative humidity was 85%±5% , the bias voltage was +1000V, and the test time
10. period was 96h.
11. By using TPO encapsulent instead of EVA as it has better electrical resistivity as compared to EVA.
Also it was found tolerant to harsh temperature and humidity conditions.