TOSHIBA MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US51 HIGH POWER SWITCHING APPLICATIONS Unit MOTOR CONTROL APPLICATIONS ¢ High Input Impedance © High Speed : ty=0.8y:s(Max.) @inductive Load © Low Saturation Voltage Ver (eat) 8.6 Max) © Enhancement-Mode © — TheElectrodes are Isolated from Case. EQUIVALENT CIRCUIT E cottal os = - | ae G TOSHIBA 2:109F1A (B) Weight 65g MAXIMUM RATINGS (Ta =25°C) CHARACTERISTIC sympoL | Ravina | UNIT Collector Emitter Voltage VoES 7200 v Gate-Emitier Voltage Vors £20 v Io pe G gorc) | 400/800 Collector Current e ot soo) A ums | (os agicy | 800/800 DO | Ir 300 Forward Current ims [Tew a0 A Collector Power Dissipation (Te=25°O) PC 2500 W [Junction Temperature T 150 c Storage Temperature Range Tag =a0~15 |S Isolation Volta vi 2500 v Solation Voltage sol [(AC 1 minute) Screw Torque (Terminal : M47M@/Mounting) | ___— 23/3 | Nm © OHNaA HEN Se fa, RT ay LON RS SON, SLPS SS ns, ere at TOsHBA Src 9 strewe nandardh of ster. ard ‘ool Situations in whieh» maifuncton 9 {blurs a TOS produc could atte ‘ot of humar ite bodily ran of mage to prope In developing yout, ces plese ensue Anat TOSHIBA. proce are eed win spect aerating ranges set fat inthe mas tone products Spechclons. Ase, ieae Keep mind the precavidns and condos St forth in the ‘0sieRsomtenductor Reliability Hancbook 7998-06-23 1/6TOSHIBA MG300Q1US51 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Mun. | ryp. [MAx. UNIT (Gate Leakage Current Tans | Van==20V, Vo = | = [=500| aA Collector Cut-off Current Ices | Vce=1200V, Vap=0 — [=| 40] ma Gate-Emitter Cutoff Voltage | VGE (oi 00mA, Vor =5V 30 | — | 60 Collector-Emitter T= | — | 28) 36 Saturation Voltage VCE (sat) = 3a] 40 Input Capacitance Cies — [360 — [ar ‘Turn-on Delay Time] tq (on) | Inductive Load = [0.05 | — Rise Time tr Vec=600V = [0.05 = Switching|Turn-on Time ton = | 02, — Time Turn-off Delay Time] td (oft) — | o5| — | “* Fall Time tf = [01] 08 Tura-off Time tof (Note » T= 06, — Forward Voltage VF, Tp=300A, VGn=0 — 24, 35] V Tp=300A, Vgp=—10V Reverse Recovery Time ter diav=10008/v8 ote | — | 028] 04 | os : ‘Transistor Stage = [= 005 Thermal Resistance Rando [Dieds Stage Ow] (Note 1) Switching Time and Reverse Recovery ‘Time Test Circuit & ‘Timing Chart EerSeATN ly gens heal py og Shae eres ee aye m1 ee. Ro aed i subject to change ith © He'intormaton conttned he eso0s OF TER a ES GPT a aS Rap, oe, BOR, MaRS SB aa 7998-06-23 2/6TOSHIBA MG300Q1US51 COLLECTOR CURRENT Ie (A) COLLECTOR-EMITTER VOLTAGE Vee 2 : i an Ie = Vor |] cousox murrren is | Tense obs 2 a COLLECTOREMITTER VOLTAGE Vox (W) Vor - Vor COMMON eaTTER tc=s00a| zm) ta GATE-EMITTER VOLTAGE Vee W) Vor - Vor COMMON eNITTER Tex 00 a GATE-EMITTER VOLTAGE Vee W) 70 ® COLLECTOR CURRENT 1¢ (A) COLLECTOREMITTER VOLTAGE Vor COLLECTOR CURRENT te (A) Ie = Vor coMMON EMaTTER teai8e z 10 COLLECTOREMITTER VOLTAGE Vox (V) Vor - Vor. common arte Ig=600a. 0 + -— 2 6 GATE-EMITTER VOLTAGE Ven W) Ic ~ Vor common rarer e ft WA a0 GATE-EMITTER VOLTAGE Ven W) 7998-06-23 3/6TOSHIBA MG300Q1US51 \ lp - ve . Vor, Var ~ Qc ] ‘COMMON CATHODE. & 5 « 5 3 : : 5 2 of t+ 1 it E 0, 5 3 i Te! E 5 uy 6 2 z a 2 comor nares | § mat g ei z no a ——Soo oo 5 sea Toa FORWARD VOLTAGE. Vp «) cHAROE ag. 0) SWITCHING TIME — Ro SWITCHING LOSS ~ Ro 4 i : g z § 5 E E 5 & tH comms rare como enrrEn vor=210¥ tenon ost a CT ier a Cr) GATE esStANCE Re GATE RESISTANCE Rg (0) 7998-06-23 4/6TOSHIBA MG300Q1US51 SWITCHING TIME — Ic SWITCHING LOSS ~ Ic 19) ‘COMMON EMITTER (COMMON RATTTER Voo=600 Voe=215v —— Teo250 a} Rg=200 | i & SWITCHING LOSS. (ws) oy] 5 rs) fay To 300 00 COLLECTOR CURRENT Ig.) COLLECTOR CURRENT Ig. (A) Tp ter TP Eaew ~ IP TTI a z a at SE : E tH a ; se a ‘COMMON CATIIODE a s firae= 10008) 2 conmoy caTione a | ss Sires 10008 yu Yor=-107 vee=«00¥ at t os Li i oO To 3 70 Tor 3 "Ho FORWARD CURRENT Ip FORWARD CURRENT tp) 7998-06-23 5/6TOSHIBA MG300Q1US51 c - Vor SAFE-OPERATING AREA eae Gareth: ‘COMMON EMITTER 50000 1000 7S WAX, (PULSED) = al ool < 3 Mfipwix commans ot — 8 \ = Bod be © som Bm dineano N 8 a a : & “hranoe E onl 5 Bere 5 j seg] Yono¥ S[RGReicar "ENE sep fie sd 6 ws aoe TO ST —————— COLLECTOREMITTER VOLTAGE Vex, «) COLLEOTORSMITER VOLTAGE. Vor. «) REVERSE BIAS SOA. Rth it) — tw g DIODE STAGE g 2 "P yeuwe B | Uoeesi mea ae awed OT Tao oon po CoLLECTOR-SMITER VOLTAGE. Vee) PULSE WM ty 6) SHORT CIRCUIT SOA COLLECTOR CURRENT Ie (A) "200 ao 00 00 “T000" —T200- “Tao COLLECTOREMITTER VOLTAGE Voce W) 7998-06-23 6/6