SFH618A/628A

PHOTOTRANSISTOR, 5.3 kV TRIOS

LOW CURRENT INPUT
OPTOCOUPLER
Package Dimensions in Inches (mm)

2 1 SFH618A
FEATURES Pin One
I.D. Anode 1
• Very High CTR at IF=1 mA, VCE=0.5 V 4 Collector
– SFH618A-2, 63–125% .268 (6.81) Cathode 2 3 Emitter
– SFH618A-3, 100–200% .255 (6.48)

– SFH618A-4, 160–320% SFH628A

Anode/
– SFH618A-5, 250–500% Cathode 1 4 Collector
3 4
– SFH628A-2, 63–200%
.190 (4.83) Cathode/ 3 Emitter
– SFH628A-3, 100–320% .179 (4.55) Anode 2

– SFH628A-4, 160–500% .305

.045 (1.14)
• Specified Minimum CTR at IF=-0.5 mA .030 (.76) (7.75)

– SFH618A, VCE=1.5 V: ≥32% (typical 120%)

– SFH628A, VCE=1.5 V: ≥50% (typical 160%)
.150 (3.81)
.130 (3.30)
• Good CTR Linearity Depending on Forward Current .135 (3.43
.115 (2.92
• Low CTR Degradation 4° .040 (1.02) 10°
Typ. .030 (.76 ) Typ.
• High Collector-Emitter Voltage, VCEO=55 V
• Isolation Test Voltage, 5300 VACRMS .022 (.56) 3°–9°
.012 (.30)
.018 (.46)
• Low Coupling Capacitance 1.00 (2.54) .008 (.20)
Typ.
• Field-Effect Stable by TRIOS (TRansparent IOn Shield)
• End-Stackable, 0.100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity Maximum Ratings
(Unconnected Base) Emitter
• Underwriters Lab File #52744 Reverse Voltage (SFH618A)6 V
• VDE 0884 Available with Option 1 DC Forward Current (SFH628A: ± ) 50 mA
SMD Option — See SFH6186/6286 Data Sheet Surge Forward Current (tP≤10 µs) (SFH628A: ± )2.5 A
Total Power Dissipation70 mW
APPLICATIONS
Detector
• Telecom
Collector-Emitter Voltage55 V
• Industrial Controls
Emitter-Collector Voltage7 V
• Battery Powered Equipment
Collector Current50 mA
• Office Machines Collector Current (tP≤1 ms)100 mA
DESCRIPTION Total Power Dissipation150 mW
Package
The SFH618A/628A feature a high current transfer ratio, low
Isolation Test Voltage between Emitter and
coupling capacitance and high isolation voltage. These cou-
Detector, refer to Climate DIN 40046,
plers have a GaAs infrared emitting diode emitter, which is
part 2, Nov. 745300 VACRMS
optically coupled to a silicon planar phototransistor detector,
Creepage≥7 mm
and is incorporated in a plastic DIP-4 package.
Clearance≥7 mm
The coupling devices are designed for signal transmission Insulation Thickness between Emitter and Detector≥0.4 mm
between two electrically separated circuits. Comparative Tracking Index
The couplers are end-stackable with 2.54 mm spacing. per DIN IEC 112/VDE0 303, part 1175
Therefore multicouplers can easily be implemented and con- Isolation Resistance
ventional multicouplers can be replaced. VIO=500 V, TA=25°C≥1012 Ω
VIO=500 V, TA=100°C≥1011 Ω
Creepage and clearance distances of >8 mm are achieved Storage Temperature Range–55 to +150°C
with option 6. This version complies with IEC 950 (DIN VDE Ambient Temperature Range–55 to +100°C
0805) for reinforced insulation up to an operation voltage of Junction Temperature100°C
400 VRMS or DC. Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm)260°C

Specifications subject to change.

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Characteristics (TA=25°C)

Description Symbol Min. Typ. Max. Unit Condition

Emitter
Forward Voltage VF 1.1 1.5 V IF=5 mA
Reverse Current SFH618A IR .01 10 VR=6 V
Capacitance SFH618A C0 25 pF VR=0 V, f=1 MHz
SFH628A 45
Thermal Resistance RthJA 1070 K/W
Detector
Collector-Emitter Leakage Current ICEO 10 200 nA VCE=10 V
Capacitance CCE 7 pF VCE=5 V, f=1 MHz
Thermal Resistance RthJA 500 K/W
Package
SFH618A-2 0.25 0.4 IC=0.32 mA, IF=1 mA
SFH618A-3 0.25 0.4 IC=0.5 mA, IF=1 mA
Collector-Emitter Saturation Voltage VCESAT V
SFH618A-4 0.25 0.4 IC=0.8 mA, IF=1 mA
SFH618A-5 0.25 0.4 IC=1.25 mA, IF=1 mA
SFH628A-2 0.25 0.4 IC=0.5 mA, IF=± 1 mA
SFH628A-3 0.25 0.4 IC=0.8 mA, IF=± 1 mA
Collector-Emitter Saturation Voltage VCESAT V
SFH628A-4 0.25 0.4 IC=1.25 mA, IF=± 1 mA
Coupling Capacitance CC 0.25 pF
SFH618A-2 63 125 IF=1 mA, VCE=0.5 V
IC/IF %
SFH618A-2 32 75 IF=0.5 mA, VCE=1.5 V
SFH618A-3 100 200 IF=1 mA, VCE=0.5 V
IC/IF %
SFH618A-3 50 120 IF=0.5 mA, VCE=1.5 V
Coupling Transfer Ratio SFH618A-4 160 320 IF=1 mA, VCE=0.5 V
IC/IF %
SFH618A-4 80 200 IF=0.5 mA, VCE=1.5 V
SFH618A-5 250 500 IF=1 mA, VCE=0.5 V
IC/IF %
SFH618A-5 125 300 IF=0.5 mA, VCE=1.5 V
SFH628A-2 63 200 IF=± 1 mA, VCE=0.5 V
IC/IF %
SFH628A-2 32 100 IF=± 0.5 mA, VCE=1.5 V
SFH628A-3 100 320 IF=± 1 mA, VCE=0.5 V
Coupling Transfer Ratio IC/IF %
SFH628A-3 50 160 IF=± 0.5 mA, VCE=1.5 V
SFH628A-4 160 500 IF=± 1 mA, VCE=0.5 V
IC/IF %
SFH628A-4 80 250 IF=± 0.5 mA, VCE=1.5 V

SFH618A/628A
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Switching Times Measurement
Figure 1. Test circuit—SFH618A Figure 2. Test circuit—SFH628A

±IF RL
VCC = 5 V VCC
IC
Input RL
VOUT

47Ω

Figure 3. Switching times, typical Figure 4. Test circuit and waveforms

VCC=5 V, IC=2 mA, RL=100Ω, TA=25°C
INPUT
Turn-on Time tON 6.0 µs 0 ton toff

Rise Time tR 3.5 µs tpdon tpdof

tr tr
Turn-off Time tOFF 5.5 µs OUTPUT td
ts
0
Fall Time tF 5.0 µs 10%
10%

50% 50%

90% 90%

SFH618A/628A
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Figure 1. Current transfer ratio (typ.) Figure 2. Current transfer ratio (typ.) Figure 3. Diode forward voltage
VCE=0.5 V, CTR=f(TA) VCE=1.5 V, CTR=f(TA) TA=25°C, VF=f(IF)

Figure 4. Diode forward voltage Figure 5. Transistor capacitance Figure 6. Output characteristics
IF=1 mA, VF=f(TA) TA=25°C, f=1 MHz, CCE=f(VCE) TA=25°C, CE=f(VCE, IF)

Figure 7. Permissible forward Figure 8. Permissible power Figure 9. Switching times (typ.)
current diode IF=f(TA) dissipation PTOT=f(TA) TA=25°C, IF=1 mA, VCC=5 V
ton, tr, toff, tf=f(RL)

SFH618A/628A
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