Professional Documents
Culture Documents
Z-FeTTM MOSFET
VDS = 1200 V
ID(MAX) = 24 A
N-Channel Enhancement Mode
RDS(on) = 160mΩ
Features Package
TO-247-3
Benefits
Applications
• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
Part Number Package
• Switch Mode Power Supplies
CMF10120D TO-247-3
24 VGS@20V, TC = 25˚C
ID Continuous Drain Current A Fig. 10
13 VGS@20V, TC = 100˚C
ID = 10A, VDD = 50 V, L = 15 mH
IAR Repetitive Avalanche Current 10 A
tAR limited by Tjmax
-55 to
TJ , Tstg Operating Junction and Storage Temperature
+135
˚C
1 Nm
Md Mounting Torque
8.8 lbf-in
M3 or 6-32 screw
1 CMF10120D Rev. A
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0V, ID = 50μA
2.4 3.5 VDS = VGS, ID = 0.5 mA
V
3.1 4.1 VDS = VGS, ID = 1.0 mA
VGS(th) Gate Threshold Voltage Fig. 11
1.8 V VDS = VGS, ID = 0.5 mA, TJ = 135ºC
2.3 V VDS = VGS, ID = 1.0 mA, TJ = 135ºC
0.5 50 VDS = 1200V, VGS = 0V
IDSS Zero Gate Voltage Drain Current μA
5 150 VDS = 1200V, VGS = 0V, TJ = 135ºC
IGSS Gate-Source Leakage Current 0.25 μA VGS = 20V, VDS = 0V
160 200 VGS = 20V, ID = 10A
RDS(on) Drain-Source On-State Resistance mΩ Fig. 3
190 240 VGS = 20V, ID = 10A, TJ = 135ºC
4.2 VDS= 20V, IDS= 10A
gfs Transconductance S Fig. 6
3.9 VDS= 20V, IDS= 10A, TJ = 135ºC
Ciss Input Capacitance 928
VGS = 0V
Coss Output Capacitance 63
pF Fig. 13
VDS = 800V
Crss Reverse Transfer Capacitance 7.5
f = 1MHz
Thermal Characteristics
2 CMF10120D Rev. A
Typical Performance
50 50
45 45
40 40
35 35
30 30
ID (A)
ID (A)
25 25
20 20
15 15
10 10
5 5
0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12
VDS (V) VDS (V)
Figure 1. Typical Output Characteristics TJ = 25ºC Figure 2. Typical Output Characteristics TJ = 135ºC
2 350
1.8 VGS = 20 V
300
1.6
VGS = 20 V
1.4 250
Normalized RDS(on)
RDS(on) (mΩ)
1.2
200
135oC
1
150 25oC
0.8
0.6 100
0.4
50
0.2
0 0
0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50
TJ (oC) ID (A)
Figure 3. Normalized On-Resistance vs. Temperature Figure 4. On-Resistance vs. Drain Current
800 30
VD = 20 V
700
25
600
TJ = 25oC
20
500
RDS(on) (mΩ)
ID = 10 A
ID (A)
400 15 135oC
300
10
TJ = 135oC 25oC
200
5
100
0 0
10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
VGS (V) VGS (V)
3 CMF10120D Rev. A
Typical Performance
1 100
DC:
0.5 tp ≤ 1 µs
0.3 tp = 10 µs
Limited
100E-3 by RDS(on)
0.1
10
0.05 tp = 100 µs
ZthJC (oC/W)
ID (A)
0.02
10E-3
0.01
tp = 1 ms
1
tp = 10 ms
1E-3
SinglePulse
DC
0.1
100E-6
1 10 100 1000
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
tp (s) VDS (V)
160 25
140
20
120
100
15
PD (W)
ID (A)
80
10
60
40
5
20
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC (oC) TC (oC)
Figure 9. Power Dissipation Derating Curve Figure 10. Continuous Current Derating Curve
4.5 25
4
20
3.5 ID = 1 mA
3 15
VGS (V)
2.5
VGS(th) (V)
10
2 ID = 0.5 mA
ID = 10 A
VDD = 800 V
1.5 5
1
0
0.5
0 -5
-75 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50
TJ (oC) Gate Charge (nC)
Figure 11. Gate Threshold Voltage vs. Figure 12. Typical Gate Charge Characteristics
Temperature (25°C)
4 CMF10120D Rev. A
Typical Performance
10000 10000
Ciss Ciss
1000 1000
Capacitance (pF)
Capacitance (pF)
Coss
Coss
100 100
Crss
Crss
10 10
1 1
0 20 40 60 80 100 120 140 160 180 200 0 100 200 300 400 500 600 700 800
VDS (V) VDS (V)
Figure 13A and 13B. Typical Capacitances vs. Drain Voltage at VGS = 0V and f = 1 MHz
40 11
25 7
ID
Eoss (µJ)
6 1500
VDS (V)
ID (A)
20
5
15 4 1000
3
10
2 500
5
1
0 0 0
0 100 200 300 400 500 600 700 800 0 0.001 0.002 0.003 0.004 0.005 0.006
Figure 14. Typical COSS Stored Energy Figure 15. Typical Unclamped Inductive Switching
Waveforms Showing Avalanche Capability
80 90
tD(off)v tD(off)v
70 VGS = 0/20V 80 VGS = 0/20V
VDD = 400V VDD =800V
RL = 40 Ω RL = 80 Ω
70
60 ID = 10 A ID = 10 A
TA = 25oC TA = 25oC trv
60
50
trv
Time (nsec)
tfv
Time (nsec)
50
40
tfv
40
30
30
20 tD(on)v
tD(on)v 20
10
10
0 0
0 5 10 15 20 25 0 5 10 15 20 25
External Gate Resistor (Ω) External Gate Resistor (Ω)
Figure 16. Resistive Switching Times vs. Figure 17. Resistive Switching Times vs.
External RG at VDD = 400V, ID = 10A External RG at VDD = 800V, ID = 10A
5 CMF10120D Rev. A
Typical Performance
350 450
300 400
ETOT,SW
VGS = 0/20V
RG = 15 Ω Tot 350
250 VDD = 800V
Switching Energy (µJ)
L = 856 µH ETOT,SW
150 200
EOFF
150
100
EON EOFF VGS = 0/20V
100
RG = 20 Ω Tot
VDD = 800V
50
50 L = 856 µH
FWD: C4D05120A
ID = 10 A
0 0
4 5 6 7 8 9 10 11 0 25 50 75 100 125 150
Peak Drain Current (A) TJ (oC)
Figure 18. Clamped Inductive Switching Energy vs. Figure 19. Clamped Inductive Switching Energy vs.
Drain Current (Fig. 20) Junction Temperature (Fig 20)
C4D05120A
856μH 5A, 1200V
SiC Schottky
+
800V
42.3μf
-
CMF10120D
VDS
90%
10%
VGS
td(on)v tfv td(off)v trv
ton toff
6 CMF10120D Rev. A
Test Circuit Diagrams and Waveforms
trr
Ic
trr Qrr= id dt
tx
∫
856μH CMF10120D tx
10% Irr
Vcc
10% Vcc
+
Vpk
800V
42.3μf Irr
-
Diode Recovery
CMF10120D Waveforms
t2
Diode Reverse
Recovery Energy
Erec= id dt
t1
∫
t1 t2
Fig 22. Body Diode Recovery Test Fig 23. Body Diode Recovery Waveform
EA = 1/2L x ID2
FOR OFFICIAL USE ONLY – Not Cleared for Open Release
Fig 24. Unclamped Inductive Switching Test Circuit Fig 25. Unclamped Inductive Switching waveform
for Avalanche Energy
ESD Ratings
7 CMF10120D Rev. A
Package Dimensions
Inches Millimeters
Package TO-247-3 POS
Min Max Min Max
A .605 .635 15.367 16.130
B .800 .831 20.320 21.10
Y
J .075 .085 1.910 2.160
AA K 6˚ 21˚ 6˚ 21˚
L 4˚ 6˚ 4˚ 6˚
M 2˚ 4˚ 2˚ 4˚
CC
N 2˚ 4˚ 2˚ 4˚
P .090 .100 2.286 2.540
Q .020 .030 .508 .762
R 9˚ 11˚ 9˚ 11˚
S 9˚ 11˚ 9˚ 11˚
T 2˚ 8˚ 2˚ 8˚
U 2˚ 8˚ 2˚ 8˚
V .137 .144 3.487 3.658
W .210 .248 5.334 6.300
(2)
X .502 .557 12.751 14.150
Y .637 .695 16.180 17.653
Z .038 .052 0.964 1.321
AA .110 .140 2.794 3.556
(1) BB .030 .046 0.766 1.168
TO-247-3
“The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the
“The levels
maximum of environmentally
concentration values (alsosensitive,
referred to persistent biologically
as the threshold toxic (PBT),
limits) permitted for suchpersistent
substances,organic pollutants
or are used (POP), application,
in an exempted or otherwise restricted
in accordance materials
with in
EU Directive
2002/95/EC
this productonarethe below
restriction
theofmaximum
the use of certain hazardousvalues
concentration substances
(alsoin referred
electrical and electronic
to as equipmentlimits)
the threshold (RoHS), as amended
permitted forthrough April 21, 2006.or are used in an
such substances,
exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic
equipment (RoHS), as amended through April 21, 2006.”
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited Cree, Inc.
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical 4600 Silicon Drive
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree Fax: +1.919.313.5451
and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc. www.cree.com/power
8 CMF10120D Rev. A